Abstract: An optical device includes a substrate; a trench in a portion of the substrate; a clad layer arranged in the trench; a first structure arranged on the clad layer to have a first depth; and a second structure arranged on the clad layer to have a second depth different from the first depth.

Abstract: An optical apparatus includes an optical waveguide located on a substrate and including a guiding portion and a taper portion, and a grating pattern located on the substrate. The grating pattern includes a plurality of low refractive index portions and a plurality of high refractive index portions, which are alternately arranged in a first direction parallel to a top surface of the substrate. Each of the plurality of high refractive index portions includes a curved inner sidewall and a curved outer sidewall having curvatures defined by circular paths. The inner sidewall and the outer sidewall of at least one of the plurality of high refractive index portions have a first focus position. The inner sidewall or the outer sidewall of at least one of the plurality of high refractive index portions or a sidewall of the taper portion has a second focus position different from the first focus position.

Abstract: An optical coupler includes a tapered portion and a grating portion. The tapered portion has a width in a second direction increasing along a first direction substantially perpendicular to the second direction. The tapered portion includes first and second ends opposed to each other in the first direction. The first end has a first width, and the second end has a second width greater than the first width. The grating portion is connected to the second end of the tapered portion, and has a curvature radius greater than a distance to the first end of the tapered portion.

Abstract: A data processing system may include: a first device; a second device; and an optical link connected between the first and second devices. The optical link may include a main optical waveguide configured to transmit an optical signal output from the second device; N sub-optical waveguides; N mode couplers, each configured to perform a mode coupling operation between the main optical waveguide and a respective one of the N sub-optical waveguides; and an optical wavelength filter connected to an output terminal of the main optical waveguide and an output terminal of each one of the N sub-optical waveguides. Each of the N sub-optical waveguides may include a first region formed at a first distance from the main optical waveguide; a second region formed at a second, greater distance from the main optical waveguide; and a third region for connecting the first and second regions.

Abstract: Hybrid silicon lasers are provided including a bulk silicon substrate, a localized insulating layer that extends on at least a portion of the bulk silicon substrate, an optical waveguide structure on an upper surface of the localized insulating layer. The optical waveguide structure includes an optical waveguide including a silicon layer. A lasing structure is provided on the optical waveguide structure.

Abstract: A data processing system may include: a first device; a second device; and an optical link connected between the first and second devices. The optical link may include a main optical waveguide configured to transmit an optical signal output from the second device; N sub-optical waveguides; N mode couplers, each configured to perform a mode coupling operation between the main optical waveguide and a respective one of the N sub-optical waveguides; and an optical wavelength filter connected to an output terminal of the main optical waveguide and an output terminal of each one of the N sub-optical waveguides. Each of the N sub-optical waveguides may include a first region formed at a first distance from the main optical waveguide; a second region formed at a second, greater distance from the main optical waveguide; and a third region for connecting the first and second regions.

Abstract: An optical integrated circuit may include a substrate including a single crystalline semiconductor material, a passive element extending in a <100> crystal orientation of the substrate and including the single crystalline semiconductor material, and an active element extending in a <110> crystal orientation of the substrate and including the single crystalline semiconductor material.

Abstract: An optical link may include a main optical waveguide; N sub-optical waveguides, where N is a natural number; N mode couplers, each configured to perform a mode coupling operation between the main optical waveguide and a respective one of the N sub-optical waveguide; and an optical wavelength filter connected to an output terminal of the main optical waveguide and an output terminal of each of the N sub-optical waveguides. A memory system may include a memory device, a memory controller, and the optical link. A data processing system may include the memory system and a central processing unit connected to the memory system through a bus.

Abstract: An integrated circuit device includes a plurality of device layers disposed on a substrate. A first one of the device layers includes at least one photo device and/or at least one electronic device and a second one of the device layers includes at least one photo device overlying the at least one photo device and/or the at least one electronic device of the first one of the device layers.

Abstract: A photodetector structure can include a silicon substrate and a silicon layer on the silicon substrate, that can include a first portion of an optical transmission medium that further includes a silicon cross-sectional transmission face. A germanium layer can be on the silicon substrate and can include a second portion of the optical transmission medium, adjacent to the first portion can include a germanium cross-sectional transmission face butt-coupled to the silicon cross-sectional transmission face.

Abstract: An optical modulator comprises a bulk-silicon substrate comprising a trench having a predetermined width and a predetermined depth. A bottom cladding layer is formed in the trench, and a plurality of waveguides and a phase modulation unit are formed on the bottom cladding layer. A top cladding layer is formed on the plurality of waveguides and the phase modulation unit.

Abstract: Optical waveguide and coupler devices and methods include a trench formed in a bulk semiconductor substrate, for example, a bulk silicon substrate. A bottom cladding layer is formed in the trench, and a core region is formed on the bottom cladding layer. A reflective element, such as a distributed Bragg reflector can be formed under the coupler device and/or the waveguide device. Because the optical devices are integrated in a bulk substrate, they can be readily integrated with other devices on a chip or die in accordance with silicon photonics technology. Specifically, for example, the optical devices can be integrated in a DRAM memory circuit chip die.

Abstract: A memory test system is disclosed. The memory system includes a memory device, a tester generating a clock signal and a test signal for testing the memory device, and an optical splitting module. The optical splitting module comprises an electrical-optical signal converting unit which converts each of the clock signal and the test signal into an optical signal to output the clock signal and the test signal as an optical clock signal and an optical test signal. The optical splitting unit further comprises an optical signal splitting unit which splits each of the optical clock signal and the optical test signal into n signals (n being at least two), and an optical-electrical signal converting unit which receives the split optical clock signal and the split optical test signal to convert the split optical clock signal and the split optical test signal into electrical signals used in the memory device.

Abstract: An optical integrated circuit may include a substrate including a single crystalline semiconductor material, a passive element extending in a <100> crystal orientation of the substrate and including the single crystalline semiconductor material, and an active element extending in a <110> crystal orientation of the substrate and including the single crystalline semiconductor material.

Abstract: Provided is a memory module, a system using the memory module, and a method of fabricating the memory module. The memory module may include a printed circuit board and a memory package on the printed circuit board. The printed circuit board may include an embedded optical waveguide and a first optical window extending from the optical waveguide to a first surface of the printed circuit board. The memory package may also include a memory die having an optical input/output section and a second optical window. The optical input/output section, the second optical window, and the first optical window may be arranged in a line and the first optical window and the second optical window may be configured to at least one of transmit an optical signal from the optical waveguide to the optical input/output section and transmit an optical signal from the optical input/output section to the optical waveguide.

Abstract: An optical link may include a main optical waveguide; N sub-optical waveguides, where N is a natural number; N mode couplers, each configured to perform a mode coupling operation between the main optical waveguide and a respective one of the N sub-optical waveguide; and an optical wavelength filter connected to an output terminal of the main optical waveguide and an output terminal of each of the N sub-optical waveguides. A memory system may include a memory device, a memory controller, and the optical link. A data processing system may include the memory system and a central processing unit connected to the memory system through a bus.

Abstract: A semiconductor memory system includes a controller and a memory device that are optical-interconnected. The controller includes a control logic configured to generate a control signal for controlling the memory device and a transmitter configured to convert the control signal into an optical signal, and output the optical signal. The memory device includes a receiving unit filter configured to convert the optical signal into an electric signal, and the electric signal based on a supply voltage corresponding to a period of the optical signal or the electric signal.

Abstract: An integrated circuit device includes a plurality of device layers disposed on a substrate. A first one of the device layers includes at least one photo device and/or at least one electronic device and a second one of the device layers includes at least one photo device overlying the at least one photo device and/or the at least one electronic device of the first one of the device layers.

Abstract: Provided is an optical interconnection system that transmits and receives a three-level signal. The optical interconnection system includes a first and a second optical interconnection device that transmits and receives a two-level signal, and a synthesizer that outputs a three-level signal by synthesizing signals from the first and second optical interconnection devices. The optical interconnection system may transmit and receive a three-level signal while using an optical interconnection device that interconnects a two-level signal.

Abstract: A multi-chip having an optical interconnection unit is provided. The multi-chip having an optical interconnection unit includes a plurality of silicon chips sequentially stacked, a plurality of optical device arrays on a side of each of the plurality of the silicon chips such that the optical device arrays correspond to each other and a wiring electrically connecting the silicon chip and the optical device array attached to a side of the silicon chip, wherein the corresponding optical device arrays forms an optical connection unit by transmitting and receiving an optical signal between the corresponding optical device arrays in different layers. Each of the optical device arrays includes at least one of a light emitting device and a light receiving device.