Abstract: Disclosed herein is a freshness maintaining apparatus for maintaining freshness of an object in the apparatus. The apparatus comprises a first shelf having a first electrode disposed therein a second shelf having a second electrode disposed therein; the first shelf and the second shelf being disposed in a manner to be parallel to one another; and a power supply unit in electrical communication with the first electrode and the second electrode; the first electrode having an electrical polarity that is opposedly disposed to an electrical polarity of the second electrode.

Abstract: A preserving apparatus has a multiple surface electrode structure that can keep an object disposed in a preserving apparatus fresh by disrupting an electrochemical balance in a microorganism and controlling a flow of ions in the microorganism from multiple surfaces. The preserving apparatus has a multiple surface electrode structure that includes a multiple surface electrode unit having at least one anode and cathode facing each other and located in a housing member of a preserving unit that stores an object disposed in the preserving apparatus; and a power supply unit that forms an electric field between the anode and the cathode by supplying a voltage to the anode and the cathode; wherein the power supply unit sequentially or randomly supplies the voltage to the at least one anode and cathode.

Abstract: A temperature measuring apparatus measures the temperature of a wafer in real time using a change of magnetic field during a thermal process. The temperature measuring apparatus includes: at least one conductive structure disposed on one surface of the wafer, in which an electrical conductivity of the conductive structure varies depending on temperature; a magnetic field generator installed facing the conductive structure with respect to a center of the wafer; and a magnetic field measuring sensor installed above the conductive structure.

Abstract: An ion generator of an ion implanter, the ion generator includes: an arc chamber provided with a slit for ion extraction and forming an equipotential surface with a first voltage; a filament installed inside of the arc chamber, heated to a predetermined temperature and generating electrons; magnetic field devices provided outside of the arc chamber and supplied with a current from a current source and generating a magnetic field in the arc chamber; a gas discharge device injecting a predetermined gas into the arc chamber; and an electrode positioned opposite to the slit and supplied with a second voltage having a high voltage than the first voltage from a voltage source and generating a magnetic field in the arc chamber.

Abstract: An apparatus and method for establishing a call connection when two parties try to simultaneously call each other are provided, in which, a simultaneous signal comparator determines, upon receipt of a call connection request, whether a calling terminal and a called terminal are trying to call each other simultaneously, and if the calling terminal and the called terminal are busy when calling each other simultaneously, requests rejection of a call connection request from at least one of the calling terminal and the called terminal, and setup a call connection between the calling terminal and the called terminal. A switch rejects the call connection request from the at least one of the calling terminal and the called terminal, and establishes the call connection between the calling terminal and the called terminal according to the request of the simultaneous signal comparator.

Abstract: A filament member, ion source, and an ion implantation apparatus. The filament member may have a plate shape, and the thermoelectron emitter may include slots and a plurality of conductive paths disposed around the slots to emit thermoelectrons.

Abstract: An RMIM electrode, a method for manufacturing the RMIM electrode, and a sputtering apparatus using the RMIM electrode, wherein the RMIM electrode includes a magnet unit including a cylinder-shaped magnet located at a center of the magnet unit and a plurality of ring-shaped magnets having increasingly larger diameters surrounding the cylinder-shaped magnet; and a driver unit for supporting and for off-axis-rotating the magnet unit, wherein in the magnet unit, adjacent magnets have opposite magnetization directions.

Abstract: An ion source element, an ion implanter having the ion source element and a method of modifying the ion source element are provided. In the ion source element, a chamber may have a cavity divided into a plurality of inner sections configured substantially perpendicularly to an axis defined through centers of ends of the cavity. The larger inner sections may be at, or near, a center of the cavity and become smaller toward the ends of the cavity. A filament may be disposed at one end of the chamber to emit thermal electrons. A repeller may extend into the chamber through the other end of the chamber. An inlet may be formed in a first cavity wall to introduce gas having a dopant species into the chamber. A beam slit may be formed in a second cavity wall, opposite the inlet, of the chamber to extract an ionized species of the gas from the chamber.

Abstract: An RMIM electrode, a method for manufacturing the RMIM electrode, and a sputtering apparatus using the RMIM electrode, wherein the RMIM electrode includes a magnet unit including a cylinder-shaped magnet located at a center of the magnet unit and a plurality of ring-shaped magnets having increasingly larger diameters surrounding the cylinder-shaped magnet; and a driver unit for supporting and for off-axis-rotating the magnet unit, wherein in the magnet unit, adjacent magnets have opposite magnetization directions.

Abstract: An elementary plasma source for generating plasma is provided. In the elementary plasma source, first and second magnets are shaped like a hollow cylinder, and the second magnet surrounds the first magnet, for forming a magnetic trap between the first and second magnets. A guide provides microwaves to a space between the first and second magnets.

Abstract: An apparatus and method for transmitting an advanced image are provided. The apparatus includes: an encoder for encoding image data according to a frequency component of the image data; a fragmenter for selecting a part of the encoded image data based on a fragmentation position calculated using PSNR value; and a transmitter for transmitting the selected image data and information on a size of the encoded image.

Abstract: An RMIM electrode, a method for manufacturing the RMIM electrode, and a sputtering apparatus using the RMIM electrode, wherein the RMIM electrode includes a magnet unit including a cylinder-shaped magnet located at a center of the magnet unit and a plurality of ring-shaped magnets having increasingly larger diameters surrounding the cylinder-shaped magnet; and a driver unit for supporting and for off-axis-rotating the magnet unit, wherein in the magnet unit, adjacent magnets have opposite magnetization directions.

Abstract: A temperature measuring apparatus measures the temperature of a wafer in real time using a change of magnetic field during a thermal process. The temperature measuring apparatus includes: at least one conductive structure disposed on one surface of the wafer, in which an electrical conductivity of the conductive structure varies depending on temperature; a magnetic field generator installed facing the conductive structure with respect to a center of the wafer; and a magnetic field measuring sensor installed above the conductive structure.

Abstract: Disclosed is an apparatus for generating inductively-coupled plasma (ICP). The ICP generation apparatus includes a source region where an ICP antenna coil is mounted, the ICP antenna coil generating inductive electric fields for generating plasma and having a serially-connected concentric circle-type structure, the total number of windings of the ICP antenna coil being greater than 2, the ICP antenna coil having a structure in which at least one circular winging closest to the center of the concentric circle is wound in a direction opposite to that of the other windings; a sealed chamber in which a predetermined process is performed on a sample placed on a chuck therein through a reaction between plasma ions and reactive radicals; and a radio frequency (RF) power supply for providing RF electric power of a predetermined frequency to the ICP antenna coil in the source region.

Abstract: An elementary plasma source for generating plasma is provided. In the elementary plasma source, first and second magnets are shaped like a hollow cylinder, and the second magnet surrounds the first magnet, for forming a magnetic trap between the first and second magnets. A guide provides microwaves to a space between the first and second magnets.

Abstract: An inductively coupled plasma (ICP) generating apparatus includes an evacuated reaction chamber, an antenna installed at an upper portion of the reaction chamber to induce an electric field for ionizing reaction gas supplied into the reaction chamber and generating plasma, and an radio frequency (RF) power source connected to the antenna to apply radio frequency power to the antenna, wherein the antenna has a plurality of coils having different radiuses, at least one of the coils being a serpentine coil bent in a zigzag pattern. Capacitors are connected between the RF power source and a matching network and between the matching network and the antenna, in parallel with the antenna, to induce a LC resonance phenomenon. With the ICP generating apparatus having the above structure, it is possible to reduce antenna inductance, suppress capacitive coupling, and improve plasma uniformity. It is also possible to discharge and sustain plasma efficiently using the LC resonance phenomenon.

Abstract: A sputtering apparatus includes a sputtering chamber, a target disposed in the sputtering chamber, and a magnetic field generator for generating a rotating magnetic field at the front of the target. The magnetic field generator includes a main magnetic field-generating part that faces the back of the target and is horizontally (laterally) offset from a vertical line passing through the center of the target. A magnetic annulus of the main magnetic field-generating part forms a magnetic enclosure having openings therethrough at locations faced in the directions of the central and peripheral portions of the target. The magnetic field-generating part thus produces a magnetic field having a non-uniform distribution at the front of the target. A substrate is positioned within the sputtering chamber facing the front of the target. A metal layer is formed by sputtering atoms from the front of the target onto the substrate. The behavior of the sputtered atoms can be effectively controlled by the magnetic field.

Abstract: An RMIM electrode, a method for manufacturing the RMIM electrode, and a sputtering apparatus using the RMIM electrode, wherein the RMIM electrode includes a magnet unit including a cylinder-shaped magnet located at a center of the magnet unit and a plurality of ring-shaped magnets having increasingly larger diameters surrounding the cylinder-shaped magnet; and a driver unit for supporting and for off-axis-rotating the magnet unit, wherein in the magnet unit, adjacent magnets have opposite magnetization directions.

Abstract: A sputtering apparatus includes a sputtering chamber, a target disposed in the sputtering chamber, and a magnetic field generator for generating a rotating magnetic field at the front of the target. The magnetic field generator includes a main magnetic field-generating part that faces the back of the target and is horizontally (laterally) offset from a vertical line passing through the center of the target. A magnetic annule of the main magnetic field-generating part forms a magnetic enclosure having openings therethrough at locations faced in the directions of the central and peripheral portions of the target. The magnetic field-generating part thus produces a magnetic field having a non-uniform distribution at the front of the target. A substrate is positioned within the sputtering chamber facing the front of the target. A metal layer is formed by sputtering atoms from the front of the target onto the substrate. The behavior of the sputtered atoms can be effectively controlled by the magnetic field.