Abstract: A heat pump system for a vehicle is provided to improve cooling and heating performance by applying a gas injection device selectively operating during air conditioning of a vehicle interior by increasing a flow rate of the refrigerant circulating in a refrigerant line of the heat pump system. The heat pump system for a vehicle may include: a compressor, a first condenser, a receiver dryer, a second condenser, an evaporator, a gas injection device, a refrigerant connection line, and a chiller. The flow of the refrigerant is controlled according to at least one mode for adjusting a temperature of a vehicle interior or adjusting a temperature of a battery module.

Abstract: A memory array comprises a plurality of memory cells. Control logic coupled to the memory array can cause a program voltage to be applied to a subset of the plurality of memory cells to be programmed to a specified logical level, where the specified logical level is associated with a group of logical levels. The control logic can cause a first program verify voltage associated with the group of logical levels to be applied to the memory cells. The control logic can decrement a count associated with the group of logical levels, where the count indicates a number of remaining program voltages to be applied for programming the subset of memory cells to a logical level of the predefined group of logical levels and terminate the program operation for the subset of plurality of memory cells responsive to determine that the count falls below a threshold value.

Abstract: A substrate processing apparatus using plasma capable of efficiently controlling the selectivity ratio of a silicon layer and an oxide layer is provided. The substrate processing apparatus comprises a first space disposed between an electrode and an ion blocker; a second space disposed between the ion blocker and a shower head; a processing space under the shower head for processing a substrate; a first supply hole for providing a first gas for generating plasma to the first space; a second supply hole for providing a second gas to be mixed with an effluent of the plasma to the second space; and a first coating layer formed on a first surface of the shower head facing the second space, not formed on a second surface of the shower head facing the processing space, and containing nickel.

Abstract: A refrigerant module for a vehicle includes: a heat exchanger for exchanging heat between a refrigerant introduced therein and a working fluid; a valve manifold connected to the heat exchanger and having a refrigerant flow path formed inside to supply the refrigerant to the heat exchanger or to bypass the refrigerant; and a plurality of valve assemblies mounted on the valve manifold to control a flow of the refrigerant flowing in the refrigerant flow path.

Abstract: Provided is a novel compound capable of improving the luminous efficiency, stability and life span of a device, an organic electric element using the same, and an electronic device thereof.

Abstract: Provided herein may be a semiconductor memory device including a memory cell, a read and write circuit, a current sensing circuit, and control logic. The memory cell array includes a plurality of memory cells. The read and write circuit includes a plurality of page buffers coupled to the plurality of memory cells through a plurality of bit lines, respectively. The current sensing circuit is coupled to the read and write circuit through a plurality of sensing lines. The control logic is configured to control operations of the current sensing circuit and the read and write circuit. At least two page buffers among the plurality of page buffers are coupled to one of the plurality of sensing lines. The control logic controls the read and write circuit to simultaneously perform a current sensing operation for the at least two page buffers.

Abstract: Provided are a compound of Formula 1 and an organic electric element including a first electrode, a second electrode, and an organic material layer between the first electrode and the second electrode and comprising the compound, the element showing improved luminescence efficiency, stability, and life span.

Abstract: A sense circuit performs a multistage boost, including a boost during precharge operation and a boost during the standard boost operation. The sense circuit includes an output transistor to drive a sense output based on current through a sense node which drives a gate of the output transistor. The sense circuit includes a precharge circuit to precharge the sense node and the gate of the output transistor and a boost circuit to boost the sense node. The boost circuit can be boosted during precharge by a first boost voltage, resulting in a lower boost applied to the sense node after precharge. The boost circuit boosts up the sense node by a second boost voltage lower than the first boost voltage. The boost circuit boosts the sense node down by the full boost voltage of the first boost voltage plus the second boost voltage after sensing.

Abstract: A memory device includes a memory cell array including a plurality of memory cells, a plurality of first even page buffers suitable for reading data from first even-numbered memory cells among the plurality of memory cells, and storing the read data, a plurality of first odd page buffers suitable for reading data from first odd-numbered memory cells among the plurality of memory cells, and storing the read data, and a plurality of first cache buffers corresponding to the first even page buffers, suitable for storing data received through a first common node from the first even page buffers, and a plurality of second cache buffers corresponding to the first odd page buffers, and suitable for storing data received through the first common node from the first odd page buffers.

Abstract: Provided herein may be a semiconductor memory device including a memory cell, a read and write circuit, a current sensing circuit, and control logic. The memory cell array includes a plurality of memory cells. The read and write circuit includes a plurality of page buffers coupled to the plurality of memory cells through a plurality of bit lines, respectively. The current sensing circuit is coupled to the read and write circuit through a plurality of sensing lines. The control logic is configured to control operations of the current sensing circuit and the read and write circuit. At least two page buffers among the plurality of page buffers are coupled to one of the plurality of sensing lines. The control logic controls the read and write circuit to simultaneously perform a current sensing operation for the at least two page buffers.

Abstract: Provided herein may be a semiconductor memory device including a memory cell, a read and write circuit, a current sensing circuit, and control logic. The memory cell array includes a plurality of memory cells. The read and write circuit includes a plurality of page buffers coupled to the plurality of memory cells through a plurality of bit lines, respectively. The current sensing circuit is coupled to the read and write circuit through a plurality of sensing lines. The control logic is configured to control operations of the current sensing circuit and the read and write circuit. At least two page buffers among the plurality of page buffers are coupled to one of the plurality of sensing lines. The control logic controls the read and write circuit to simultaneously perform a current sensing operation for the at least two page buffers.

Abstract: The purpose of the present invention is to provide a compound that can improve the lifespan, low drive voltage and high luminous efficiency of an element, an organic electronic element using same, and an electronic device comprising same.

Abstract: Provided herein may be a semiconductor memory device including a memory cell, a read and write circuit, a current sensing circuit, and control logic. The memory cell array includes a plurality of memory cells. The read and write circuit includes a plurality of page buffers coupled to the plurality of memory cells through a plurality of bit lines, respectively. The current sensing circuit is coupled to the read and write circuit through a plurality of sensing lines. The control logic is configured to control operations of the current sensing circuit and the read and write circuit. At least two page buffers among the plurality of page buffers are coupled to one of the plurality of sensing lines. The control logic controls the read and write circuit to simultaneously perform a current sensing operation for the at least two page buffers.

Abstract: A semiconductor memory device operates by applying a program pulse to a selected word line, updating a program pulse count value, determining a current sensing mode based upon the program pulse count value, and performing a program verify operation based upon the current sensing mode. The current sensing mode is determined by determining one of an individual state current sensing operation for determining verify pass or fail for one target program state and an all-state current sensing operation for determining verify pass or fail for all target program states.

Abstract: Provided herein may be a semiconductor memory device including a memory cell, a read and write circuit, a current sensing circuit, and control logic. The memory cell array includes a plurality of memory cells. The read and write circuit includes a plurality of page buffers coupled to the plurality of memory cells through a plurality of bit lines, respectively. The current sensing circuit is coupled to the read and write circuit through a plurality of sensing lines. The control logic is configured to control operations of the current sensing circuit and the read and write circuit. At least two page buffers among the plurality of page buffers are coupled to one of the plurality of sensing lines. The control logic controls the read and write circuit to simultaneously perform a current sensing operation for the at least two page buffers.

Abstract: Disclosed is a linear expander includes: a body portion including a suction hole through which a fluid having a first pressure flows in, a discharge hole through which the fluid flows out with a second pressure that is lower than the first pressure, and first and second holes connecting an expansion space formed between the suction hole and the discharge hole, a first linear generating portion and a second linear generating portion respectively causing pistons provided in the first hole and the second hole to linearly reciprocate to generate an induced electromotive force with an expansion force generated when the fluid having the first pressure expands to the fluid having the second pressure, a suction valve opening and closing the suction hole, and a discharge valve and closing the discharge hole.

Abstract: Provided are a compound of Formula 1 and an organic electric element including a first electrode, a second electrode, and an organic material layer between the first electrode and the second electrode and comprising the compound, the element showing improved luminescence efficiency, stability, and life span.

Abstract: A semiconductor memory device operates by applying a program pulse to a selected word line, updating a program pulse count value, determining a current sensing mode based upon the program pulse count value, and performing a program verify operation based upon the current sensing mode. The current sensing mode is determined by determining one of an individual state current sensing operation for determining verify pass or fail for one target program state and an all-state current sensing operation for determining verify pass or fail for all target program states.

Abstract: A memory device includes a memory cell array including a plurality of memory cells, a plurality of first even page buffers suitable for reading data from first even-numbered memory cells among the plurality of memory cells, and storing the read data, a plurality of first odd page buffers suitable for reading data from first odd-numbered memory cells among the plurality of memory cells, and storing the read data, and a plurality of first cache buffers corresponding to the first even page buffers, suitable for storing data received through a first common node from the first even page buffers, and a plurality of second cache buffers corresponding to the first odd page buffers, and suitable for storing data received through the first common node from the first odd page buffers.

Abstract: Provided are a compound of Formula 1 and an organic electric element including a first electrode, a second electrode, and an organic material layer between the first electrode and the second electrode and comprising the compound, the element showing improved luminescence efficiency, stability, and life span.