Abstract: A surface-treated copper foil according to exemplary embodiments includes a copper foil layer and a protrusion layer formed on one surface of the copper foil layer. Pores are formed inside the protrusion layer or around a boundary between the copper foil layer and the protrusion layer. Abnormal growth of the protrusions may be prevented through the pores and thus a bonding force with the insulation layer may be improved.

Abstract: The embodiments relate to an electrochromic device having flexibility while achieving an excellent light transmission variable function based on the electrochromic principle. The flexible electrochromic device comprises a first base layer; a first barrier layer on the first base layer; a light transmission variable structure on the first barrier layer; a second barrier layer on the light transmission variable structure; and a second base layer on the second barrier layer.

Abstract: The embodiments relate to an electrochromic device having flexibility while achieving an excellent light transmission variable function based on the electrochromic principle. The electrochromic device comprises a light transmission variable structure interposed between a first base layer and a second base layer, wherein the light transmission variable structure comprises a first chromic layer and a second chromic layer, and the value of ?TTd24 as defined in Equation (1) is 3% or less.

Abstract: The embodiments relate to an electrochromic device having flexibility while achieving an excellent light transmission adjusting function based on the electrochromic principle. The electrochromic device comprises a light transmission variable structure interposed between a first base layer and a second base layer, wherein the light transmission variable structure comprises a first chromic layer and a second chromic layer, the first chromic layer comprises a reducing chromic material, the second chromic layer comprises an oxidizing chromic material, and the value of c as defined in Equation 1 is 1.0 to 1.6.

Abstract: The embodiments relate to an electrochromic device having flexibility while achieving an excellent light transmission variable function based on the electrochromic principle. The electrochromic device comprises a light transmission variable structure interposed between a first base layer and a second base layer, wherein the light transmission variable structure comprises a first chromic layer and a second chromic layer, and the value of ?TTd24 as defined in Equation (1) is 3% or less.

Abstract: The embodiments relate to an electrochromic device having flexibility while achieving an excellent light transmission adjusting function based on the electrochromic principle. The electrochromic device comprises a light transmission variable structure interposed between a first base layer and a second base layer, wherein the light transmission variable structure comprises a first chromic layer and a second chromic layer, the first chromic layer comprises a reducing chromic material, the second chromic layer comprises an oxidizing chromic material, and the value of c as defined in Equation 1 is 1.0 to 1.6.

Abstract: The embodiments relate to an electrochromic device having flexibility while achieving an excellent light transmission variable function based on the electrochromic principle. The flexible electrochromic device comprises a first base layer; a first barrier layer on the first base layer; a light transmission variable structure on the first barrier layer; a second barrier layer on the light transmission variable structure; and a second base layer on the second barrier layer.

Abstract: A substrate transferring apparatus capable of reducing a nitrogen gas for purging and a shutdown time thereof. The Substrate transferring apparatus includes a ventilation driving room, a FOUP receiving room, a driving equipment room and a ventilation duct. The ventilation driving room is equipped with a main fan for blowing air downward. The FOUP receiving room is disposed under the ventilation driving room and accommodates a FOUP for storing a substrate. The driving equipment room is disposed under the FOUP receiving room. The ventilation duct connects the FOUP receiving room and the ventilation driving room.

Abstract: A purge module jig and a purge module including the purge module jig are provided. The purge module jig and the purge module include a plate having a recessed groove and an opening formed therein, a gas transfer pipe having an elliptical cross section, and a fixing part fixing the plate and the gas transfer pipe with each other, so that leakage of cleaning gas is prevented, thickness thereof is reduced, the interference between the jig and a wafer cassette is reduced, the purge module jig and the purge module can be applied to various load ports of various manufactures, and performance thereof can be improved.

Abstract: A purge module which can provide a conventional load port without a gas purging function with the gas purging function, and a load port having the purge module are disclosed. The purge module comprises a jig, a gas control box and pipes. The jig is detachably attached to an upper side of a stage of a load port. The jig comprises a gas inlet for providing a wafer carrier with gas and a gas outlet for receiving gas from the wafer carrier. The gas control box is detachably attached to the load port to control gas flow. The pipes connect the jig and the gas control box.

Abstract: A purge module jig and a purge module including the purge module jig are provided. The purge module jig and the purge module include a plate having a recessed groove and an opening formed therein, a gas transfer pipe having an elliptical cross section, and a fixing part fixing the plate and the gas transfer pipe with each other, so that leakage of cleaning gas is prevented, thickness thereof is reduced, the interference between the jig and a wafer cassette is reduced, the purge module jig and the purge module can be applied to various load ports of various manufactures, and performance thereof can be improved.

Abstract: A purge module which can provide a conventional load port without a gas purging function with the gas purging function, and a load port having the purge module are disclosed. The purge module comprises a jig, a gas control box and pipes. The jig is detachably attached to an upper side of a stage of a load port. The jig comprises a gas inlet for providing a wafer carrier with gas and a gas outlet for receiving gas from the wafer carrier. The gas control box is detachably attached to the load port to control gas flow. The pipes connect the jig and the gas control box.

Abstract: A resist underlayer polymer, a resist underlayer composition including the same, and a method of patterning using the same, the resist underlayer polymer including a repeating unit represented by at least one of Chemical Formula 1 and Chemical Formula 2:

Abstract: A hard mask composition includes a solvent and an aromatic ring-containing compound represented by the following Chemical Formula 1:

Abstract: A wafer etching apparatus and a wafer etching method using the wafer etching apparatus, which are capable of etching Si wafer in a dry etching method, are disclosed. According to the wafer etching apparatus and the wafer etching method, the capacitively coupled plasma unit or the inductively coupled plasma unit and the remote plasma unit are included together to etch wafer in a high speed and to reduce etching operation time. Additionally, the chuck has an upper surface with roughness so that the wafer can be cooled down through a helium gas provided to the wafer through a minute space between the upper surface and the wafer. Therefore, unwanted plasma which is generated in the groove in the conventional wafer etching apparatus is prevented to prevent damage of the wafer.

Abstract: A hard mask composition, a method of forming a pattern, and a semiconductor integrated circuit device, the hard mask composition including a solvent; and a compound, the compound including a structural unit represented by the following Chemical Formula 1:

Abstract: An aromatic ring-containing compound for a resist underlayer and a resist underlayer composition, the aromatic ring-containing compound being represented by the following Chemical Formula 1: wherein, in Chemical Formula 1, R1 to R6 are each independently a substituted or unsubstituted C1 to C10 alkyl group, a substituted or unsubstituted C5 to C20 aromatic ring group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C3 to C20 cycloalkenyl group, a substituted or unsubstituted C2 to C20 heteroaryl group, or a substituted or unsubstituted C2 to C20 heterocycloalkyl group, X1 to X6 are each independently hydrogen, a hydroxy group (—OH), a substituted or unsubstituted alkyl amine group, a substituted or unsubstituted alkoxy group, or an amino group (—NH2), n1 to n6 are each independently 0 or 1, and 1?n1+n2+n3+n4+n5+n6?6.

Abstract: An aromatic ring-containing polymer for a resist underlayer, the polymer including a unit represented by the following Chemical Formula 1: wherein, R1 and R2 are independently hydrogen, a C1 to C10 alkyl group, or an aromatic group, A is a functional group derived from an aromatic compound with a heteroatom or without a heteroatom, and n is an integer of one or more.

Abstract: An aromatic ring-containing polymer for an underlayer of a resist, including a unit structure represented by Chemical Formula 1:

Abstract: An aromatic ring-containing polymer for an underlayer of a resist, including a unit structure represented by Chemical Formula 1: