Patents by Inventor Seung Bum CHA

Seung Bum CHA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device and manufacturing method of the semiconductor device
    Patent number: 11610915
    Abstract: A semiconductor device includes: a first stack structure; a second stack structure adjacent to the first stack structure in a first direction; a first insulating layer including protrusion parts protruding in a second direction intersecting the first direction and including a concave part defined between the protrusion parts; and a second insulating layer located between the first stack structure and the second stack structure, the second insulating layer inserted into the concave part and the second insulating layer in contact with at least one protrusion part among the protrusion parts.
    Type: Grant
    Filed: April 28, 2021
    Date of Patent: March 21, 2023
    Assignee: SK hynix Inc.
    Inventors: Sang Yong Lee, Sang Min Kim, Jung Ryul Ahn, Sang Hyun Oh, Seung Bum Cha, Kang Sik Choi
  • SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE
    Publication number: 20210249441
    Abstract: A semiconductor device includes: a first stack structure; a second stack structure adjacent to the first stack structure in a first direction; a first insulating layer including protrusion parts protruding in a second direction intersecting the first direction and including a concave part defined between the protrusion parts; and a second insulating layer located between the first stack structure and the second stack structure, the second insulating layer inserted into the concave part and the second insulating layer in contact with at least one protrusion part among the protrusion parts.
    Type: Application
    Filed: April 28, 2021
    Publication date: August 12, 2021
    Applicant: SK hynix Inc.
    Inventors: Sang Yong LEE, Sang Min KIM, Jung Ryul AHN, Sang Hyun OH, Seung Bum CHA, Kang Sik CHOI
  • Semiconductor device and manufacturing method of the semiconductor device
    Patent number: 11024647
    Abstract: A semiconductor device includes: a first stack structure; a second stack structure adjacent to the first stack structure in a first direction; a first insulating layer including protrusion parts protruding in a second direction intersecting the first direction and including a concave part defined between the protrusion parts; and a second insulating layer located between the first stack structure and the second stack structure, the second insulating layer inserted into the concave part and the second insulating layer in contact with at least one protrusion part among the protrusion parts.
    Type: Grant
    Filed: June 16, 2020
    Date of Patent: June 1, 2021
    Assignee: SK hynix Inc.
    Inventors: Sang Yong Lee, Sang Min Kim, Jung Ryul Ahn, Sang Hyun Oh, Seung Bum Cha, Kang Sik Choi
  • SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE
    Publication number: 20200312879
    Abstract: A semiconductor device includes: a first stack structure; a second stack structure adjacent to the first stack structure in a first direction; a first insulating layer including protrusion parts protruding in a second direction intersecting the first direction and including a concave part defined between the protrusion parts; and a second insulating layer located between the first stack structure and the second stack structure, the second insulating layer inserted into the concave part and the second insulating layer in contact with at least one protrusion part among the protrusion parts.
    Type: Application
    Filed: June 16, 2020
    Publication date: October 1, 2020
    Applicant: SK hynix Inc.
    Inventors: Sang Yong LEE, Sang Min KIM, Jung Ryul AHN, Sang Hyun OH, Seung Bum CHA, Kang Sik CHOI
  • Semiconductor device and manufacturing method of the semiconductor device
    Patent number: 10727247
    Abstract: A semiconductor device includes: a first stack structure; a second stack structure adjacent to the first stack structure in a first direction; a first insulating layer including protrusion parts protruding in a second direction intersecting the first direction and including a concave part defined between the protrusion parts; and a second insulating layer located between the first stack structure and the second stack structure, the second insulating layer inserted into the concave part and the second insulating layer in contact with at least one protrusion part among the protrusion parts.
    Type: Grant
    Filed: November 5, 2018
    Date of Patent: July 28, 2020
    Assignee: SK hynix Inc.
    Inventors: Sang Yong Lee, Sang Min Kim, Jung Ryul Ahn, Sang Hyun Oh, Seung Bum Cha, Kang Sik Choi
  • SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE
    Publication number: 20190280006
    Abstract: A semiconductor device includes: a first stack structure; a second stack structure adjacent to the first stack structure in a first direction; a first insulating layer including protrusion parts protruding in a second direction intersecting the first direction and including a concave part defined between the protrusion parts; and a second insulating layer located between the first stack structure and the second stack structure, the second insulating layer inserted into the concave part and the second insulating layer in contact with at least one protrusion part among the protrusion parts.
    Type: Application
    Filed: November 5, 2018
    Publication date: September 12, 2019
    Applicant: SK hynix Inc.
    Inventors: Sang Yong LEE, Sang Min KIM, Jung Ryul AHN, Sang Hyun OH, Seung Bum CHA, Kang Sik CHOI