Abstract: A coil component includes a body having one surface, and one end surface and the other end surface connected to the one surface and opposing each other; a coil portion including lead-out patterns within the body; slit portions respectively disposed in an edge portion between the one end surface and the one surface of the body and an edge portion between the other end surface and the one surface of the body to expose the lead-out patterns; external electrodes disposed to be spaced apart from each other on the one surface and respectively extending to the slit portions to be connected to the lead-out patterns; and surface insulating layers, respectively disposed on the one end surface and the other end surface of the body. The surface insulating layers include a first insulating thin film including silicon dioxide (SiO2), and a second insulating thin film including aluminum oxide (Al2O3).

Abstract: In one example, a semiconductor device can comprise a substrate, a device stack, first and second internal interconnects, and an encapsulant. The substrate can comprise a first and second substrate sides opposite each other, a substrate outer sidewall between the first substrate side and the second substrate side, and a substrate inner sidewall defining a cavity between the first substrate side and the second substrate side. The device stack can be in the cavity and can comprise a first electronic device, and a second electronic device stacked on the first electronic device. The first internal interconnect can be coupled to the substrate and the device stack. The encapsulant can cover the substrate inner sidewall and the device stack and can fill the cavity. Other examples and related methods are disclosed herein.

Abstract: A vertical memory device includes first gate electrodes stacked on a cell region of a substrate and spaced apart from each other in a vertical direction substantially perpendicular to an upper surface of the substrate, a channel extending through the first gate electrodes and extending in the vertical direction, a first contact plug structure contacting a corresponding one of the first gate electrodes, extending in the vertical direction, and including a first metal pattern, a first barrier pattern covering a lower surface and a sidewall of the first metal pattern and a first metal silicide pattern covering a lower surface and a sidewall of the first barrier pattern, and a second contact plug structure extending in the vertical direction on a peripheral circuit region of the substrate and including a second metal pattern and a second barrier pattern covering a lower surface and a sidewall of the second metal pattern.

Abstract: Provided is a near-infrared ray absorbing article. A near-infrared ray absorbing article of the present invention is capable of preventing a decrease in visible transmittance and near-infrared absorption due to the interaction between a plurality of organic materials forming light-absorbing layers. In addition, the near-infrared ray absorbing article of the present invention has the advantage of being able to be thinner. In addition, the near-infrared ray absorbing article of the present invention has the advantage of excellent mechanical properties such as strength and heat resistance.

Abstract: Provided are a novel organostannyl silicate compound, a method for preparing the same, a photoresist composition including the organostannyl silicate compound according to the present disclosure, and a method for forming a photoresist pattern using the composition. The organostannyl silicate compound of the present disclosure is industrially very useful, since the compound may implement a photoresist composition having excellent light sensitivity and etching resistance and a high-quality semiconductor device may be manufactured using the composition.

Abstract: Provided is a method for producing (alkyl)arene compounds represented by Formulae 3-1, 3-2, and 3-3 by the Friedel-Crafts alkylation reaction of alkyl halide compounds and arene compounds using organic phosphine compounds as a catalyst.

Abstract: Provided is a method for producing (alkyl)arene compounds represented by Formulae 3-1, 3-2, and 3-3 by the Friedel-Crafts alkylation reaction of alkyl halide compounds and arene compounds using organic phosphine compounds as a catalyst.

Abstract: A heating apparatus including a side wall heat insulator configured to provide an inner space for receiving a reaction tube, an upper wall heat insulator covering a top portion of the side wall heat insulator, a heat generation part in an inner surface of the side wall heat insulator, and a heat compensating part on a lower surface of the upper wall heat insulator, the heat compensating part including a reflection surface in a first region on the lower surface of the upper wall heat insulator, the first region having a first emissivity less than an emissivity of the upper wall heat insulator may be provided.

Abstract: A heating apparatus including a side wall heat insulator configured to provide an inner space for receiving a reaction tube, an upper wall heat insulator covering a top portion of the side wall heat insulator, a heat generation part in an inner surface of the side wall heat insulator, and a heat compensating part on a lower surface of the upper wall heat insulator, the heat compensating part including a reflection surface in a first region on the lower surface of the upper wall heat insulator, the first region having a first emissivity less than an emissivity of the upper wall heat insulator may be provided.