Abstract: A photovoltaic device and a manufacturing method thereof are provided. The photovoltaic device includes: a substrate; a first conductive layer formed on the substrate; P layers and N layers alternately formed along a first direction on the first conductive layer; and I layers covering the P layers and the N layers on the first conductive layer, wherein the P layers and the N layers are separated from each other by a first interval, the I layers are formed between the P layers and the N layers that are separated by the first interval, and the P layers, the I layers, and the N layers formed along the first direction form unit cells.

Abstract: In one or more embodiments of a photovoltaic device and a method of manufacturing the photovoltaic device, a first conductive layer, a first light-absorbing layer and a second conductive layer may be formed on a substrate, in sequence. A temperature for forming the second conductive layer may be lower than a temperature for forming the first conductive layer and a temperature for forming the first light-absorbing layer.

Abstract: An inspecting apparatus for a solar cell and an inspecting method are provided. The inspecting apparatus for the solar cell includes a head unit having a plurality of probe units, a rotation unit rotating the head unit according to an interval of cells of the solar cell, a controller controlling a rotation angle of the head unit by controlling the rotation unit, and a wire unit connected to the head unit to be electrically connected to the probe units.

Abstract: A solar cell module includes a bottom module layer formed on a first substrate and absorbing a greater fraction of light energy in a first wavelength band than in a second wavelength band. The first wavelength band includes a shorter wavelength than any wavelength in the second wavelength band. A top module layer is formed on the bottom module layer to absorb a greater fraction of light energy in the second wavelength band than in the first wavelength band. A second substrate is formed on the top module layer. A reflecting filter is provided between the bottom module layer and the top module layer. The reflecting filter reflects a greater fraction of light energy in the first wavelength band than in the second wavelength band and transmits a greater fraction of light energy in the second wavelength band than in the first wavelength band.

Abstract: A solar cell including a first semiconductor layer formed by sequentially stacking a positive (P) layer, an intrinsic (I) layer and a negative (N) layer, wherein the P layer comprises amorphous silicon carbide and at least one of the I and N layers comprises micro-crystalline silicon.

Abstract: A method of manufacturing a photovoltaic device includes preparing a semiconductor substrate having a light incidence surface receiving light and including single crystalline silicon, wet-etching the light incidence surface to form a plurality of first protrusions on the light incidence surface, dry etching a plurality of surfaces of the first protrusions to form a plurality of second protrusions on the plurality of surfaces of the first protrusions, and forming a semiconductor layer on the light incidence surface. The method further includes forming a first electrode on the semiconductor layer and forming a second electrode on a rear surface of the semiconductor substrate facing the light incidence surface.

Abstract: A method for manufacturing a solar cell is provided. The manufacturing method includes: depositing a transparent conductive layer on a substrate; patterning the transparent conductive layer; forming a semiconductor layer including deposited on the patterned transparent conductive layer; patterning the semiconductor layer; coating a metal powder on the patterned semiconductor layer; forming a rear electrode layer on the semiconductor layer coated with the metal powder; and patterning the rear electrode layer and the semiconductor layer. This method is useful for producing a solar cell with improved light absorption efficiency.

Abstract: A transparent conductive layer includes a substrate, a first conductive layer disposed on the substrate, and a second conductive layer disposed on the first conductive layer, wherein the second conductive layer comprises a textured surface and an opening which exposes the first conductive layer, wherein the opening comprises a diameter of about 1 micrometer to about 3 micrometers. Also disclosed is a method of manufacturing the transparent conductive layer and a photoelectric device.

Abstract: Photovoltaic devices and methods of manufacturing the same are provided. In one example, a photovoltaic device includes: a substrate; a transparent conductive layer deposited on the substrate; a semiconductor layer provided with a P layer, an I layer, and a N layer sequentially deposited on the transparent conductive layer; and a rear electrode deposited on the N layer of the semiconductor layer, wherein the P layer is a P-type oxide semiconductor.

Abstract: A display substrate includes a soda-lime glass substrate, a barrier pattern, and first, second and third conductive patterns. The soda-lime glass substrate has a pixel area. The first conductive pattern includes a gate line formed on the soda-lime glass substrate and from a first conductive layer. The barrier pattern is formed between the first conductive pattern and the soda-lime glass substrate. The second conductive pattern includes a data line crossing the gate line. The data line is formed on the first conductive pattern and from a second conductive layer. The third conductive pattern includes a pixel electrode formed in the pixel area of the soda-lime glass substrate. The pixel electrode is formed on the second conductive pattern and from a third conductive layer.

Abstract: Provided is a method of forming metal wiring. The method includes forming a photosensitive film pattern on a substrate, hydrophobicizing at least part of the photosensitive film pattern, coating metal ink on the substrate having the photosensitive film pattern, forming a seed layer, and forming a metal layer. Alternatively, a trench is formed by using the photosensitive film pattern as a mask, and metal aerosol is sprayed to form the seed layer and then the metal layer. In this method, there is no need to form a metal thin film on the photosensitive film pattern when the seed layer is formed. As a result, less metal is wasted, which, in turn, significantly reduces manufacturing costs.

Abstract: A method of electrically eliminating defective solar cell units that are disposed within an integrated solar cells module and a method of trimming an output voltage of the integrated solar cells module are provided, where the solar cells module has a large number (e.g., 50 or more) of solar cell units integrally disposed therein and initially connected in series one to the next. The method includes providing a corresponding plurality of repair pads, each integrally extending from a respective electrode layer of the solar cell units, and providing a bypass conductor integrated within the module and extending adjacent to the repair pads. Pad-to-pad spacings and pad-to-bypass spacings are such that pad-to-pad connecting bridges may be selectively created between adjacent ones of the repair pads and such that pad-to-bypass connecting bridges may be selectively created between the repair pads and the adjacently extending bypass conductor.

Abstract: In a method of manufacturing a photoelectric device, a transparent conductive layer is formed on a substrate, and the transparent conductive layer is partially etched using an etching solution including hydrofluoric acid. Thus, a transparent electrode having a concavo-convex pattern on its surface is formed. When the transparent conductive layer is partially etched, a haze of the transparent electrode may be controlled by adjusting an etching time of the transparent conductive layer. Also, since the etching solution is sprayed to the transparent conductive layer to etch the transparent conductive layer, the concavo-convex pattern on the surface of the transparent electrode may be easily formed even though the size of the substrate increases.

Abstract: A inductively coupled plasma apparatus includes reaction chamber in which a substrate is loaded, and a double comb type antenna structure including first linear antennas and second linear antennas respectively arranged horizontally to pass through the reaction chamber inside the reaction chamber. The first and second linear antenna are alternately aligned each other. First ends the first linear antennas are protruded out of the reaction chamber and coupled to each other so as to be coupled to a first induced RF power, and first ends of the second linear antennas are protruded out of the reaction chamber in opposition to the first ends of the first linear antennas and coupled to each other so as to be coupled to a second induced RF power. Plasma uniformity is improved and superior plasma uniformity is maintained by adjusting a distance between antennas according to a size of the substrate.

Abstract: A method of manufacturing a display device includes: forming an auxiliary layer including at least one of metal and a metal oxide on an insulating substrate; forming a photoresist layer pattern partially exposing the auxiliary layer on the auxiliary layer; forming a trench on the insulating substrate by etching the exposed auxiliary layer and the insulating substrate under the exposed auxiliary layer; forming a seed layer including a first seed layer disposed on the photoresist layer pattern and a second seed layer disposed in the trench; removing the photoresist layer pattern and the first seed layer by lifting off the photoresist layer pattern; removing the auxiliary layer remaining on the insulating substrate after lifting off the photoresist layer pattern; and forming a main wiring layer on the second seed layer by electroless plating.

Abstract: Provided is a method of fabricating a semiconductive oxide thin-film transistor (TFT) substrate. The method includes forming gate wiring on an insulation substrate; and forming a structure in which a semiconductive oxide film pattern and data wiring are stacked on the gate wiring, wherein the semiconductive oxide film pattern is selectively patterned to have channel regions of first thickness and source/drain regions of greater second thickness and where image data is coupled to the source regions by data wiring formed on the source regions. According to a 4-mask embodiment, the data wiring and semiconductive oxide film pattern are defined by a shared etch mask.

Abstract: Disclosed is an inductively coupled plasma apparatus using a magnetic field. The inductively coupled plasma apparatus comprises a reaction chamber in which a substrate is loaded, an antenna source installed in the reaction chamber and including first and second antennas having antenna rods, which are alternately aligned, and magnets installed above the antenna rods, wherein first sides of the first and second antennas are connected to a power source and second sides of the first and second antennas are grounded. Plasma uniformity is improved and superior plasma uniformity is maintained by adjusting a distance between antennas according to a size of the substrate.