Abstract: A display device includes a first electrode disposed on a substrate, a first insulating film disposed on the first electrode and having a first opening formed, a second insulating film disposed on the first insulating film and having a second opening, and a contact electrode electrically contacting at least a portion of the first electrode through the first opening and the second opening, wherein a side surface of the first insulating film defines the first opening, and the second insulating film overlaps the side surface of the first insulating film such that the contact electrode and the first insulating film are not in contact with each other.

Abstract: The present disclosure provides a water-in-oil makeup cosmetic composition containing isostearic acid, a pigment-grade powder (specifically, a pigment-grade powder coated with a lipoamino acid), an emulsifier having an HLB greater than 0 and lower than or equal to 8, and a residual amount of water, the composition having superior water resistance and cleansing properties at the same time. The water-in-oil makeup cosmetic composition of the present disclosure can be usefully used because it has superior water resistance in environments with below-neutral pH, such as tap water, sweat, etc. and is converted to have superior cleansing properties when the skin is washed with alkaline water such as soapy water.

Abstract: A semiconductor device includes a substrate having a first region and a second region, first active fins that extend in a first direction in the first region, second active fins that extend in the first direction in the second region, a first field insulating layer between the first active fins and that extend in a second direction, a second field insulating layer between the second active fins and extending in the second direction, a gate line that extends in the second direction on the second field insulating layer, the gate line linearly along with the first field insulating layer, a gate isolation layer between the first field insulating layer and the gate line, and gate spacers that extend in the second direction, the gate spacers in contact with both sidewalls of each of the first field insulating layer, the gate line, and the gate isolation layer.

Abstract: An embodiment resin composition for shielding electromagnetic waves, based on a total weight of the resin composition, includes 20 to 80 wt % of thermoplastic resin, 1 to 50 wt % of a conductive filler, and 0.1 to 30 wt % of an additive.

Abstract: A semiconductor device includes channels, a gate structure, and a source/drain layer. The channels are disposed at a plurality of levels, respectively, and spaced apart from each other in a vertical direction on an upper surface of a substrate. The gate structure is disposed on the substrate, at least partially surrounds a surface of each of the channels, and extends in a first direction substantially parallel to the upper surface of the substrate. The source/drain layer is disposed at each of opposite sides of the gate structure in a second direction substantially parallel to the upper surface of the substrate and substantially perpendicular to the first direction and is connected to sidewalls of the channels. A length of the gate structure in the second direction changes along the first direction at a first height from the upper surface of the substrate in the vertical direction.

Abstract: The present disclosure relates to a composition for increasing ultraviolet blocking efficiency of an ultraviolet blocking agent by heat. In general, the UV blocking efficiency of the UV blocking agent is reduced by heat, but the present disclosure shows an unexpected effect in that the UV blocking efficiency of the UV blocking agent is increased by heat.

Abstract: A turbomachine is provided.

Abstract: A turbomachine is provided.

Abstract: The present invention relates to an ultraviolet blocking cosmetic composition in a chromatic emulsion state, containing a high quantity of an organic ultraviolet-blocking agent, and a silicone-based surfactant in which polyethylene glycol-added dimethicone and polypropylene glycol are cross-linked, and the cosmetic composition according to the present invention can exhibit a stable chromatic emulsion state even if containing a high quantity of the organic ultraviolet-blocking agent.

Abstract: A fluid stabilizing control method of an axial compressor is provided, which includes driving to drive the axial impeller, and stall controlling to suppress or prevent an occurrence of a stall that may transpire during rotation of the axial impeller by supplying highly-pressurized compressed air into the casing through a stall controller according to a predetermined time and volume. Accordingly, a stall may be suppressed or prevented, the occurrence of a stall that may transpire when a threshold point is exceeded by an unexpected event during driving in a low-flow high-pressure section on a performance curve, in which efficiency is high. Additionally, since an air injection method for suppressing the stall is properly applied, an amount of power expended for the stall control may be reduced while supply of the high-pressure compressed air is minimized, thereby achieving economically feasible stall control.

Abstract: The present invention relates to a fuel cell-engine hybrid system formed to effectively utilize an exhaust gas discharged from a process for generating electricity. A fuel cell-engine hybrid system according to the present invention includes: an electricity generating unit including a cathode and an anode interposing an electrolyte membrane therebetween; and an engine unit connected to a rear end of the electricity generating unit and generating power by receiving the exhaust gas discharged from the anode.

Abstract: A fluid stabilizing control method of an axial compressor is provided, which includes driving to drive the axial impeller, and stall controlling to suppress or prevent an occurrence of a stall that may transpire during rotation of the axial impeller by supplying highly-pressurized compressed air into the casing through a stall controller according to a predetermined time and volume. Accordingly, a stall may be suppressed or prevented, the occurrence of a stall that may transpire when a threshold point is exceeded by an unexpected event during driving in a low-flow high-pressure section on a performance curve, in which efficiency is high. Additionally, since an air injection method for suppressing the stall is properly applied, an amount of power expended for the stall control may be reduced while supply of the high-pressure compressed air is minimized, thereby achieving economically feasible stall control.

Abstract: The present invention relates to a fuel cell-engine hybrid system formed to effectively utilize an exhaust gas discharged from a process for generating electricity. A fuel cell-engine hybrid system according to the present invention includes: an electricity generating unit including a cathode and an anode interposing an electrolyte membrane therebetween; and an engine unit connected to a rear end of the electricity generating unit and generating power by receiving the exhaust gas discharged from the anode.

Abstract: A method of through-etching a substrate that is simplified and by which the flow of ions can be kept to be regular during a plasma dry etching process, is provided. According to this method, a buffer layer is formed on a first plane of the substrate, a metal layer is formed on the buffer layer, an etching mask pattern is formed on a second plane opposite to the first plane, and the substrate is through-etched with the etching mask pattern as an etching mask. Preferably, the substrate is formed of a single-crystal silicon, the buffer layer is formed of silicon dioxide, and the metal layer is formed of aluminum.

Abstract: A method of through-etching a substrate that is simplified and by which the flow of ions can be kept to be regular during a plasma dry etching process, is provided. According to this method, a buffer layer is formed on a first plane of the substrate, a metal layer is formed on the buffer layer, an etching mask pattern is formed on a second plane opposite to the first plane, and the substrate is through-etched with the etching mask pattern as an etching mask. Preferably, the substrate is formed of a single-crystal silicon, the buffer layer is formed of silicon dioxide, and the metal layer is formed of aluminum.