Abstract: A display device includes a substrate, a thin film transistor disposed on the substrate, where the thin film transistor includes a drain electrode, a passivation layer disposed on the substrate covering the thin film transistor, a common electrode disposed on the passivation layer, where the common electrode receives a common voltage, a liquid crystal layer disposed in a microcavity layer on the common electrode, a roof layer disposed covering the liquid crystal layer, and a pixel electrode disposed on the roof layer, and a method of manufacturing the display device is provided.

Abstract: In a display substrate, a method for manufacturing the display substrate and an electro-wetting display apparatus including the display substrate, the display substrate includes a base substrate, a sidewall defining a unit pixel area, a pixel electrode, a hydrophobic insulating layer and a light blocking layer. The sidewall is on the base substrate and defines the unit pixel area. The pixel electrode is in the unit pixel area. The hydrophobic insulating layer is on the sidewall and the pixel electrode. The light blocking layer is on the hydrophobic insulating layer and overlaps the sidewall.

Abstract: A display substrate includes a pixel switching element, a pixel electrode, a reference line, a control switching element, a bias line, a light sensing element, a sensing capacitor and a light blocking filter pattern. The pixel switching element is connected to a data line and a gate line, includes a first semiconductor pattern. The pixel electrode is connected to the pixel switching element. The reference line is in parallel with the data line. The control switching element is connected to the reference line and the gate line, includes a second semiconductor pattern. The bias line is in parallel with the gate line. The light sensing element is connected to the bias line and the control switching element, includes a third semiconductor pattern. The sensing capacitor is connected to the light sensing element and a storage line. The light blocking filter pattern transmits a first light, and blocks a second light.

Abstract: The present invention discloses a thin film transistor (TFT), a method for manufacturing the TFT, and a display substrate using the TFT that may prevent degradation of the characteristics of an oxide semiconductor contained in the TFT by blocking external light from entering a channel region of the oxide semiconductor. The TFT includes an oxide semiconductor layer; a protective layer overlapping a channel region of the oxide semiconductor layer; an opaque layer disposed between the oxide semiconductor layer and the protective layer; a source electrode contacting a first side of the oxide semiconductor layer; a drain electrode contacting a second side of the oxide semiconductor layer and facing the source electrode across the channel region; a gate electrode to apply an electric field to the oxide semiconductor layer; and a gate insulating layer disposed between the gate electrode and the oxide semiconductor layer.

Abstract: The present disclosure relates to a display device including a touch sensor and a manufacturing method thereof, and more particularly, to a display device including a touch sensor using a piezoelectric material and a manufacturing method thereof. The display device includes a first substrate, wherein a plurality of thin film transistors are disposed on the first substrate; a second substrate disposed facing the first substrate; a plurality of piezoelectric elements disposed on the second substrate; and a first sensing electrode overlapping the piezoelectric elements, the first sensing electrode being configured to transfer a sensing voltage generated as a result of pressure applied to the piezoelectric elements.

Abstract: A touch sensing display device includes: a thin film transistor array panel including a thin film transistor; and an opposing display panel facing the thin film transistor array panel. The opposing display panel includes a piezoelectric sensor including a capacitive sensor and a piezoelectric layer. The capacitive sensor includes sensing wires, driving wires, and a bridge connecting the sensing wires together or the driving wires together. The piezoelectric sensor further includes a pair of electrodes, the piezoelectric layer being disposed between the pair of electrodes. The bridge and a first electrode of the pair of electrodes are formed of the same material and in the same layer.

Abstract: A display device includes a display panel which displays an image, a cushion tape member which is disposed below the display panel to protect a rear surface of the display panel, and includes a first cushion tape and a second cushion tape, a sound element which is disposed between the first cushion tape and the second cushion tape, and includes a pair of electrodes and a vibrating material layer disposed between the pair of electrodes.

Abstract: A display device includes: a first substrate; a photo transistor on the first substrate; and a switching transistor connected to the photo transistor. The photo transistor includes a light blocking film on the first substrate, a first gate electrode on the light blocking film and in contact with the light blocking film, a first semiconductor layer on the first gate electrode and overlapping the light blocking film, and a first source electrode and a first drain electrode on the first semiconductor layer. The switching transistor includes a second gate electrode on the first substrate, a second semiconductor layer on the second gate electrode and overlapping the second gate electrode, and a second source electrode and a second drain electrode on the second semiconductor layer. The first semiconductor layer and the second semiconductor layer are at a same layer of the display device, and each includes crystalline silicon germanium.

Abstract: A touch sensitive display device utilizing infrared ray sensing transistors. The transistors are configured, and comprise specified materials, to allow them to be formed with fewer photolithography processes, reducing cost and manufacturing time.

Abstract: A photosensor includes a sensing switching element, a sensing element, and a reset switching element. The sensing switching element includes an output terminal connected to a sensing signal line, a control terminal connected to a first gate line, and an input terminal connected to the first node. The sensing element includes an output terminal connected to a first node, a control terminal connected a second gate line disposed next to the first gate line, and an input terminal connected to a source voltage line transmitting a source voltage. The sensing element senses light. The reset switching element includes an output terminal connected to the first node, a control terminal connected to the second gate line, and an input terminal connected to a driving voltage line transmitting a driving voltage.

Abstract: A display device includes: a substrate; an infrared sensing transistor on the substrate; a readout transistor connected to the infrared sensing transistor; a power source line; and a light blocking member on the infrared sensing transistor, where the infrared sensing transistor includes a light blocking film on the substrate, a first gate electrode contacting and overlapping the light blocking film and connected to a power source line, a first semiconductor layer on the first gate electrode overlapping the light blocking film, and first source and drain electrodes on the first semiconductor layer, where the readout transistor includes a second gate electrode on the substrate, a second semiconductor layer on the second gate electrode and overlapping the second gate electrode, and second source and drain electrodes the second semiconductor layer, and where the power source line and the first gate electrode are at a same layer.

Abstract: A display substrate includes a pixel switching element, a pixel electrode, a reference line, a control switching element, a bias line, a light sensing element, a sensing capacitor and a light blocking filter pattern. The pixel switching element is connected to a data line and a gate line, includes a first semiconductor pattern. The pixel electrode is connected to the pixel switching element. The reference line is in parallel with the data line. The control switching element is connected to the reference line and the gate line, includes a second semiconductor pattern. The bias line is in parallel with the gate line. The light sensing element is connected to the bias line and the control switching element, includes a third semiconductor pattern. The sensing capacitor is connected to the light sensing element and a storage line. The light blocking filter pattern transmits a first light, and blocks a second light.

Abstract: A touch screen substrate includes a base substrate, a first switching element and a first sensing element which senses infrared light. The first switching element includes a first switching gate electrode, a first active pattern disposed on the first switching gate electrode, a first switching source electrode disposed on the first active pattern and a first switching drain electrode disposed apart from the first switching source electrode. The first sensing element includes a first sensing drain electrode connected to the first switching source electrode, a first sensing source electrode disposed apart from the first sensing drain electrode, a second active pattern disposed below the first sensing drain electrode and the first sensing source electrode and including a first amorphous layer, a doped amorphous layer and a second amorphous layer, and a first sensing gate electrode disposed on the first sensing drain electrode and the first sensing source electrode.

Abstract: An IR sensing transistor according to an exemplary embodiment of the present invention includes: a light blocking layer formed on a substrate; a gate insulating layer formed on the light blocking layer; a semiconductor formed on the gate insulating layer; a pair of ohmic contact members formed on the semiconductor; a source electrode and a drain electrode formed on respective ones of the ohmic contact members; a passivation layer formed on the source electrode and the drain electrode; and a gate electrode formed on the passivation layer, wherein substantially all of the gate insulating layer lies on the light blocking layer.

Abstract: The present invention relates to a visible ray sensor and a light sensor capable of improving photosensitivity by preventing photodegradation. The visible ray sensor may include: a substrate, a light blocking member formed on the substrate, and a visible ray sensing thin film transistor formed on the light blocking member. The light blocking member may be made of a transparent electrode, a band pass filter, or an opaque metal.

Abstract: A display device includes a display panel which displays an image, a cushion tape member which is disposed below the display panel to protect a rear surface of the display panel, and includes a first cushion tape and a second cushion tape, a sound element which is disposed between the first cushion tape and the second cushion tape, and includes a pair of electrodes and a vibrating material layer disposed between the pair of electrodes.

Abstract: A touch sensing display device includes: a thin film transistor array panel including a thin film transistor; and an opposing display panel facing the thin film transistor array panel. The opposing display panel includes a piezoelectric sensor including a capacitive sensor and a piezoelectric layer. The capacitive sensor includes sensing wires, driving wires, and a bridge connecting the sensing wires together or the driving wires together. The piezoelectric sensor further includes a pair of electrodes, the piezoelectric layer being disposed between the pair of electrodes. The bridge and a first electrode of the pair of electrodes are formed of the same material and in the same layer.

Abstract: The present disclosure relates to a display device including a touch sensor and a manufacturing method thereof, and more particularly, to a display device including a touch sensor using a piezoelectric material and a manufacturing method thereof. The display device includes a first substrate, wherein a plurality of thin film transistors are disposed on the first substrate; a second substrate disposed facing the first substrate; a plurality of piezoelectric elements disposed on the second substrate; and a first sensing electrode overlapping the piezoelectric elements, the first sensing electrode being configured to transfer a sensing voltage generated as a result of pressure applied to the piezoelectric elements.

Abstract: An information detection device includes: a plurality of light sensing units each configured to detect light; a plurality of sensor scanning drivers each configured to apply sensor scanning signals to the light sensing units; a sensing signal processor configured to receive position information detected by the light sensing units; a plurality of bias applying units each configured to apply bias voltages to the light sensing units; wherein each bias applying unit applies a different polarity of bias voltage.

Abstract: An IR sensing transistor according to an exemplary embodiment of the present invention includes: a light blocking layer formed on a substrate; a gate insulating layer formed on the light blocking layer; a semiconductor formed on the gate insulating layer; a pair of ohmic contact members formed on the semiconductor; a source electrode and a drain electrode formed on respective ones of the ohmic contact members; a passivation layer formed on the source electrode and the drain electrode; and a gate electrode formed on the passivation layer, wherein substantially all of the gate insulating layer lies on the light blocking layer.