Abstract: A window member includes a main part including a first side extending in a first direction, a second side extending in a second direction, and a first corner side connecting the first and second sides. The window member further includes a first side part in contact with the first side, a second side part in contact with the second side, and a first corner part connecting the first and second side parts. The first corner part includes a first upper corner part, a first middle corner part, and a first lower corner part. A lower surface of the first middle corner part has a first radius of curvature, a lower surface of the first lower corner part has a second radius of curvature, and the first radius of curvature is greater than the second radius of curvature.

Abstract: Disclosed are a method and apparatus for reusing wastewater. The method for reusing wastewater disclosed herein includes: generating a mixed wastewater by mixing multiple types of wastewater (S20); performing a first purification by passing the mixed wastewater through a flocculation-sedimentation unit (S40); performing a second purification by passing an effluent of the flocculation-sedimentation unit through a membrane bioreactor (MBR) (S60); performing a third purification by passing an effluent of the MBR through a reverse-osmosis membrane unit (S80); and reusing an effluent of the reverse-osmosis membrane unit as cooling water or industrial water (S100).

Abstract: The present invention relates to an image encoding and decoding technique, and more particularly, to an image encoder and decoder using unidirectional prediction. The image encoder includes a dividing unit to divide a macro block into a plurality of sub-blocks, a unidirectional application determining unit to determine whether an identical prediction mode is applied to each of the plurality of sub-blocks, and a prediction mode determining unit to determine a prediction mode with respect to each of the plurality of sub-blocks based on a determined result of the unidirectional application determining unit.

Abstract: A method of personalizing a vehicle lamp includes drawing an image made up of a plurality of pixels that implement a vehicle lamp, based on an input by a user. The method also includes converting the drawn image into light-and-shade data that correspond to the pixels, respectively, multiplying a pixel light distribution value, corresponding to each pixel, by a weighted value based on the data resulting from the conversion, adding up results of the multiplication, and deriving total light distribution of the pixels that results when brightness of the vehicle lamp is the same as that of the drawn image. The method further includes comparing the derived total light distribution against a predetermined reference value and determining whether the derived total light distribution satisfies a predetermined light distribution reference, and applying the drawn image to the vehicle lamp when it is determined that a predetermined light distribution reference is satisfied.

Abstract: A semiconductor device including a plurality of active regions extending in a first direction on a substrate; a device isolation layer between the plurality of active regions such that upper portions of the plurality of active regions protrude from the device isolation layer; a first gate electrode and a second gate electrode extending in a second direction crossing the first direction and intersecting the plurality of active regions, respectively, on the substrate, the first gate electrode being spaced apart from the second gate electrode in the second direction; a first gate separation layer between the first gate electrode and the second gate electrode; and a second gate separation layer under the first gate separation layer and between the first gate electrode and the second gate electrode, the second gate separation layer extending into the device isolation layer in a third direction crossing the first direction and the second direction.

Abstract: A display device and a manufacturing method thereof, and a display device including: a substrate including a display area, an opening area positioned in the display area, and a peripheral area positioned between the opening area and the display area; a transistor positioned in the display area of the substrate; a first electrode connected to the transistor; a second electrode positioned on the first electrode; an inorganic pattern portion positioned in the peripheral area of the substrate; and an intermediate layer positioned between the first electrode and the second electrode, and including at least one organic layer positioned on the inorganic pattern portion. The inorganic pattern portion includes a plurality of inorganic patterns spaced apart from each other.

Abstract: A display device comprises a substrate, a pixel electrode, a common electrode, an intermediate layer, a semiconductor layer, a metal layer, and an organic layer. The substrate includes an opening area, a peripheral area surrounding the opening area, and a display area surrounding the peripheral area. The pixel electrode overlaps the display area. The common electrode overlaps the pixel electrode. The intermediate layer is disposed between the pixel electrode and the common electrode and includes a light emitting layer and a functional layer. The semiconductor layer overlaps the peripheral area and is spaced from the display area. The metal layer overlaps the semiconductor layer. The organic layer is disposed between the semiconductor layer and the metal layer. The common electrode, the functional layer, and the metal layer respectively have a first opening, a second opening, a third opening overlapping each other and overlapping the semiconductor layer.

Abstract: A semiconductor device capable of improving operation performance and reliability, may include a gate insulating support to isolate gate electrodes that are adjacent in a length direction.

Abstract: The present invention relates to a resin molded product having excellent impact resistance and weather resistance and low dielectric loss and a RADAR module including the same, wherein the resin molded product has a permittivity of 3.7 F/m or less and a dielectric loss of 0.023 or less in the frequency range of 77 GHz, has a high-speed impact strength according to ASTM D3763 of 400 kg·m/s2 or greater, and has an electromagnetic wave transmission coefficient of ?0.8 dB or greater in the frequency range of 77 GHz to 79 GHz.

Abstract: A semiconductor device includes fin patterns on a substrate, at least one gate electrode intersecting the fin patterns, source/drain regions on upper surfaces of the fin patterns, and at least one blocking layer on a sidewall of a first fin pattern of the fin patterns, the at least one blocking layer extending above an upper surface of the first fin pattern of the fin patterns, wherein a first source/drain region of the source/drain regions that is on the upper surface of the first fin pattern has an asymmetric shape and is in direct contact with the at least one blocking layer.

Abstract: A semiconductor device capable of improving operation performance and reliability, may include a gate insulating support to isolate gate electrodes that are adjacent in a length direction.

Abstract: A semiconductor device includes fin patterns on a substrate, at least one gate electrode intersecting the fin patterns, source/drain regions on upper surfaces of the fin patterns, and at least one blocking layer on a sidewall of a first fin pattern of the fin patterns, the at least one blocking layer extending above an upper surface of the first fin pattern of the fin patterns, wherein a first source/drain region of the source/drain regions that is on the upper surface of the first fin pattern has an asymmetric shape and is in direct contact with the at least one blocking layer.

Abstract: Disclosed are a composite resin composition and an article containing the same. The composite resin composition may include semicrystalline polyamide; amorphous polyamide; an acrylonitrile-butadiene-styrene (ABS) resin; a compatibilizer; and a strength-reinforcing agent. The article may exhibit superior rigidity equivalent to or greater than that of conventional long-fiber thermoplastics and remarkably excellent dimensional stability. In addition, the composite resin composition and the molded article including the same may be used in replacement of steel parts so as to reduce the weight by about 30%.

Abstract: The present disclosure relates to a composition for a rack housing member of a vehicle having excellent dimensional stability, and a rack housing member of a vehicle formed therefrom. In an embodiment, the composition for a rack housing member of a vehicle comprises 100 parts by weight of a base resin containing polybutylene terephthalate, an acrylonitrile-styrene-acrylate copolymer, and polyethylene terephthalate, and 40 to 75 parts by weight of an inorganic filler, wherein the inorganic filler includes a glass fiber and a plate-shaped mineral filler.

Abstract: The present disclosure relates to a composition for a radar transmissive cover for a vehicle, which may enhance dielectric properties while excellently maintaining mechanical properties. The composition, as the composition forming the radar transmissive cover for the vehicle through which a radar beam radiated from a radar is transmitted, has a main material in which 70 to 90 wt % of Polybutylene Terephthalate (PBT) and 10 to 30 wt % of Polycarbonate (PC) are mixed and an additive containing at least reinforcing filler mixed.

Abstract: A display device and a manufacturing method thereof, and a display device including: a substrate including a display area, an opening area positioned in the display area, and a peripheral area positioned between the opening area and the display area; a transistor positioned in the display area of the substrate; a first electrode connected to the transistor; a second electrode positioned on the first electrode; an inorganic pattern portion positioned in the peripheral area of the substrate; and an intermediate layer positioned between the first electrode and the second electrode, and including at least one organic layer positioned on the inorganic pattern portion. The inorganic pattern portion includes a plurality of inorganic patterns spaced apart from each other.

Abstract: A semiconductor device including a plurality of active regions extending in a first direction on a substrate; a device isolation layer between the plurality of active regions such that upper portions of the plurality of active regions protrude from the device isolation layer; a first gate electrode and a second gate electrode extending in a second direction crossing the first direction and intersecting the plurality of active regions, respectively, on the substrate, the first gate electrode being spaced apart from the second gate electrode in the second direction; a first gate separation layer between the first gate electrode and the second gate electrode; and a second gate separation layer under the first gate separation layer and between the first gate electrode and the second gate electrode, the second gate separation layer extending into the device isolation layer in a third direction crossing the first direction and the second direction.

Abstract: Disclosed are a composite resin composition and an article containing the same. The composite resin composition may include semicrystalline polyamide; amorphous polyamide; an acrylonitrile-butadiene-styrene (ABS) resin; a compatibilizer; and a strength-reinforcing agent. The article may exhibit superior rigidity equivalent to or greater than that of conventional long-fiber thermoplastics and remarkably excellent dimensional stability. In addition, the composite resin composition and the molded article including the same may be used in replacement of steel parts so as to reduce the weight by about 30%.

Abstract: A semiconductor device including a plurality of active regions extending in a first direction on a substrate; a device isolation layer between the plurality of active regions such that upper portions of the plurality of active regions protrude from the device isolation layer; a first gate electrode and a second gate electrode extending in a second direction crossing the first direction and intersecting the plurality of active regions, respectively, on the substrate, the first gate electrode being spaced apart from the second gate electrode in the second direction; a first gate separation layer between the first gate electrode and the second gate electrode; and a second gate separation layer under the first gate separation layer and between the first gate electrode and the second gate electrode, the second gate separation layer extending into the device isolation layer in a third direction crossing the first direction and the second direction.

Abstract: A semiconductor device capable of improving operation performance and reliability, may include a gate insulating support to isolate gate electrodes that are adjacent in a length direction.