Abstract: A substrate processing method is provided. The substrate processing method comprises loading a substrate onto a substrate support inside a chamber, forming a plasma inside the chamber, providing a first DC pulse signal to an electromagnet that generates a magnetic field inside the chamber and processing the substrate with the plasma, wherein the first DC pulse signal is repeated at a first period including a first section and a second section subsequent to the first section, the first DC pulse signal has a first level during the first section, and the first DC pulse signal has a second level different from the first level during the second section.

Abstract: An inductively coupled plasma processing apparatus includes a lower chamber providing a space for a substrate, a high-frequency antenna that generates inductively coupled plasma in the lower chamber, dielectric windows disposed between the lower chamber and the high-frequency antenna, metal windows alternatingly disposed between the dielectric windows, and gas inlet pipes disposed in each of the metal windows, wherein each of the gas inlet pipes includes nozzles that introduce gases to the lower chamberamber.

Abstract: A device for providing feedback based on an input according to the present disclosure includes a sensor for sensing an input signal corresponding to the input of a user, and a controller that determines the input of the user as at least one of a touch operation, a press operation, or a swipe operation based on the input signal, and provides feedback corresponding to the determination result. The device may provide feedback using a haptic or sound output scheme based on the input of the user, thereby allowing the user to intuitively recognize an input function.

Abstract: A plasma etching apparatus may include a first source electrode, a first bias electrode, and a second bias electrode configured to generate a plasma by supplying energy to a process gas injected into a chamber; and a controller. The controller may be configured to supply a first high-frequency RF power, a first low-frequency RF power, and a second low-frequency RF power to the chamber during a first period from a first time to a second time; ramp down and turn off the first high-frequency RF power to the chamber during a second period from the second time to a third time; and ramp down and turn off the first low-frequency RF power to the chamber during a third period from the second time to a fourth time different from the third time. The third period may be smaller than ½ of the first period and greater than the second period.

Abstract: Plasma processing equipment includes a chuck stage for supporting a wafer and including a lower electrode, an upper electrode disposed on the chuck stage, an AC power supply which applies first to third signals having different magnitudes of frequencies to the upper electrode or the lower electrode, a dielectric ring which surrounds the chuck stage, an edge electrode located within the dielectric ring, and a resonance circuit connected to the edge electrode. The resonance circuit includes a filter circuit which allows only the third signal among the first to third signals to pass, and a series resonance circuit connected in series with the filter circuit and having a first coil and a first variable capacitor connected in series and grounded.

Abstract: A plasma processing apparatus includes; a chamber, a lower electrode disposed within the chamber and including a lower surface and an opposing upper surface configured to seat a wafer, an RF rod disposed on the lower surface of the lower electrode and extending in a vertical direction. The RF plate includes a first portion contacting the lower surface of the lower electrode, a second portion protruding from the first portion towards the RF rod, and a third portion extending from the second portion to connect the RF rod. A grounding electrode is spaced apart from the RF plate and at least partially surrounds a side wall of the RF rod and a side wall of the second portion of the RF plate. The grounding electrode includes a first grounding electrode facing each of the side wall of the RF rod and the second portion of the RF plate, and a second grounding electrode at least partially surrounding the first grounding electrode, and configured to horizontally rotate.

Abstract: A plasma processing apparatus includes a substrate chuck having a first surface for supporting a substrate, a second surface opposite to the first surface, and a sidewall, a focus ring for surrounding a perimeter of the substrate, and an edge block for supporting the focus ring. The edge block includes a side electrode on the sidewall of the substrate chuck and a bottom electrode on the second surface of the substrate chuck.

Abstract: Plasma processing equipment includes a chuck stage for supporting a wafer and including a lower electrode, an upper electrode disposed on the chuck stage, an AC power supply which applies first to third signals having different magnitudes of frequencies to the upper electrode or the lower electrode, a dielectric ring which surrounds the chuck stage, an edge electrode located within the dielectric ring, and a resonance circuit connected to the edge electrode. The resonance circuit includes a filter circuit which allows only the third signal among the first to third signals to pass, and a series resonance circuit connected in series with the filter circuit and having a first coil and a first variable capacitor connected in series and grounded.

Abstract: A method for fabricating a semiconductor device includes providing a wafer on a lower electrode inside a plasma processing apparatus. A first power having a first and second frequency is provided to the lower electrode. A second power is provided to an RF induction electrode through the lower electrode. A third power having the second frequency is released outside of a chamber. A plasma process is performed on the wafer while the third power is released. The RF induction electrode is disposed inside an insulating plate surrounding a sidewall of the lower electrode. The RF induction electrode is spaced apart front the lower electrode. The RF induction electrode has an annular shape surrounding the sidewall of the lower electrode. The first power is controlled by a first controller, and the third power is controlled by a second controller different from the first controller.

Abstract: Disclosed are a display panel including a light emitting panel, and a color conversion panel facing the light emitting panel, wherein the color conversion panel being converts an emission spectrum of light emitted from the light emitting panel, wherein the color conversion panel may include a color conversion layer including a plurality of regions including a color conversion region, and bank defining each region of the color conversion layer, the color conversion region may include quantum dots, and a refractive index of the bank is lower than a refractive index of the quantum dots, and an electronic device including the same.

Abstract: A plasma processing apparatus includes; a chamber, a lower electrode disposed within the chamber and including a lower surface and an opposing upper surface configured to seat a wafer, an RF rod disposed on the lower surface of the lower electrode and extending in a vertical direction. The RF plate includes a first portion contacting the lower surface of the lower electrode, a second portion protruding from the first portion towards the RF rod, and a third portion extending from the second portion to connect the RF rod. A grounding electrode is spaced apart from the RF plate and at least partially surrounds a side wall of the RF rod and a side wall of the second portion of the RF plate. The grounding electrode includes a first grounding electrode facing each of the side wall of the RF rod and the second portion of the RF plate, and a second grounding electrode at least partially surrounding the first grounding electrode, and configured to horizontally rotate.

Abstract: According to a method of controlling uniformity of plasma, a first RF driving pulse signal including first RF pulses is generated by pulsing a first RF signal having a first frequency, and a second RF driving pulse signal including second RF pulses is generated by pulsing a second RF signal having a second, lower frequency. The first and second RF driving signals are applied to a top electrode and/or a bottom electrode of a plasma chamber. A harmonic control signal including harmonic control pulses is generated based on timing of the first and second RF pulses. A harmonic component of the first and second RF driving pulse signals is reduced via intermittent activation and deactivation of a harmonic control circuit as controlled by the harmonic control signal. The uniformity of plasma is improved through the control based on timings of the RF driving pulses.

Abstract: A display device includes: a base layer including a display area including an emission area and a non-emission area adjacent to the emission area, and a non-display area around the display area; a light emitting element in the emission area on the base layer; a color filter layer located above the light emitting element; and a light blocking pattern on the light emitting element and including a first light blocking pattern in the non-emission area and a second light blocking pattern in the non-display area. The first light blocking pattern and the second light blocking pattern are different in thickness from each other.

Abstract: A display device includes: a first substrate; a plurality of metal layers on the first substrate and separated from each other; a buffer layer on the metal layer; a semiconductor layer on the buffer layer; a gate conductive layer on the semiconductor layer; a data conductive layer connected to the semiconductor layer; and a light-emitting element connected to the data conductive layer, wherein the metal layer includes a first portion partially overlapping the semiconductor layer in a third direction perpendicular to the surface of the first substrate, a second portion where the metal layer completely overlaps the semiconductor layer in the third direction, and a third portion where the metal layer does not overlap the semiconductor layer in the third direction.

Abstract: A device for providing feedback based on an input according to the present disclosure includes a sensor for sensing an input signal corresponding to the input of a user, and a controller that determines the input of the user as at least one of a touch operation, a press operation, or a swipe operation based on the input signal, and provides feedback corresponding to the determination result. The device may provide feedback using a haptic or sound output scheme based on the input of the user, thereby allowing the user to intuitively recognize an input function.

Abstract: A tiled display device includes a first display device including a first pixel, and a second display device coupled to the first display device in a bonding area, including a second pixel, and overlapping the first display device in the bonding area in a plane view.

Abstract: An inductively coupled plasma processing apparatus includes a lower chamber providing a space for a substrate, a high-frequency antenna configured to generate inductively coupled plasma in the lower chamber, dielectric windows disposed between the lower chamber and the high-frequency antenna, metal windows alternatingly disposed between the dielectric windows, and gas inlet pipes disposed in each of the metal windows, wherein each of the gas inlet pipes includes nozzles configured to introduce gases to the lower chamber.

Abstract: A photosensitive resin composition includes: a) an acryl-based copolymer obtained by copolymerizing i) a hydroxyl group-containing unsaturated compound; ii) an unsaturated carboxylic acid, an unsaturated carboxylic anhydride, or a mixture thereof; iii) an epoxy group-containing unsaturated compound; and iv) an olefin-based unsaturated compound, b) a 1,2-quinonediazide 5-sulfonic ester compound having a phenol compound including a compound represented by the above Chemical Formula A as ballast, c) a silane coupling agent, and d) a solvent.

Abstract: A semiconductor manufacturing device includes a plasma chamber, a source power supply, and first and second bias power supplies. The source power supply applies a first source voltage to the plasma chamber at a first time and a second source voltage to the plasma chamber at a second time. The first bias power supply applies a first turn-on voltage to the plasma chamber at the first time and a first turn-off voltage to the plasma chamber at the second time. The second bias power supply applies a second turn-off voltage to the plasma chamber at the first time and a second turn-on voltage to the plasma chamber at the second time. The plasma chamber forms plasmas of different conditions from a gas mixture in the plasma chamber based on the source, turn-on, and turn-off voltages.

Abstract: An etchant composition may include: a peroxosulfate; a cyclic amine compound; a first amphoteric compound including a carboxyl group; and a second amphoteric compound including a sulfone group, wherein the second amphoteric compound may be different from the first amphoteric compound.