Abstract: A multiple-path amplifier (e.g., a Doherty amplifier) includes a first transistor (e.g., a main amplifier FET), a second transistor (e.g., a peaking amplifier FET), a combining node, and a shunt-inductance circuit. The first and second amplifiers and the combining node structure are integrally-formed with a semiconductor die, and the shunt-inductance circuit is integrated with the die. Outputs of the first and second transistors are electrically coupled to the combining node structure. The shunt-inductance circuit is electrically coupled between the combining node structure and a ground reference node. The shunt-inductance circuit includes a shunt inductance (e.g., including wirebond(s) and/or spiral inductor(s)) that is integrated with the semiconductor die.

Abstract: A multiple-path amplifier (e.g., a Doherty amplifier) includes a first transistor (e.g., a main amplifier FET), a second transistor (e.g., a peaking amplifier FET), a combining node, and a shunt-inductance circuit. The first and second amplifiers and the combining node structure are integrally-formed with a semiconductor die, and the shunt-inductance circuit is integrated with the die. Outputs of the first and second transistors are electrically coupled to the combining node structure. The shunt-inductance circuit is electrically coupled between the combining node structure and a ground reference node. The shunt-inductance circuit includes a shunt inductance (e.g., including wirebond(s) and/or spiral inductor(s)) that is integrated with the semiconductor die.

Abstract: A multiple-stage RF amplifier and a packaged amplifier device include driver and final-stage transistors, each having a control terminal, a first current-carrying terminal, and a second current-carrying terminal. The control terminal of the final-stage transistor is electrically coupled to the first current-carrying terminal of the driver transistor. The amplifier further includes an inter-stage circuit coupled between the first current carrying terminal of the driver transistor and a voltage reference node. The inter-stage circuit includes a first inductance, a first capacitor, and a second capacitor. The first inductance and the first capacitor are coupled in series between the first current carrying terminal and the voltage reference node, with an intermediate node between the first inductance and the first capacitor. The second capacitor has a first terminal electrically coupled to the intermediate node and a second terminal electrically coupled to the voltage reference node.

Abstract: A multiple-stage RF amplifier and a packaged amplifier device include driver and final-stage transistors, each having a control terminal, a first current-carrying terminal, and a second current-carrying terminal. The control terminal of the final-stage transistor is electrically coupled to the first current-carrying terminal of the driver transistor. The amplifier further includes an inter-stage circuit coupled between the first current carrying terminal of the driver transistor and a voltage reference node. The inter-stage circuit includes a first inductance, a first capacitor, and a second capacitor. The first inductance and the first capacitor are coupled in series between the first current carrying terminal and the voltage reference node, with an intermediate node between the first inductance and the first capacitor. The second capacitor has a first terminal electrically coupled to the intermediate node and a second terminal electrically coupled to the voltage reference node.

Abstract: Embodiments of an integrated resistor may be incorporated into monolithic transistor circuits and packaged RF amplifier devices. An embodiment of an integrated resistor includes a semiconductor substrate and a resistor formed over the top surface of the semiconductor substrate from resistive material. The resistor includes at least first and second resistive sections. The first resistive section is tapered so that the first resistive section widens toward an input end of the resistor. The second resistive section is coupled in series with the first resistive section. According to a further embodiment, the second resistive section also is tapered so that the second resistive section widens toward an output end of the resistor. According to another further embodiment, a third resistive section with one or more meanders is coupled in series between the first and second resistive sections.

Abstract: Embodiments of an integrated resistor may be incorporated into monolithic transistor circuits and packaged RF amplifier devices. An embodiment of an integrated resistor includes a semiconductor substrate and a resistor formed over the top surface of the semiconductor substrate from resistive material. The resistor includes at least first and second resistive sections. The first resistive section is tapered so that the first resistive section widens toward an input end of the resistor. The second resistive section is coupled in series with the first resistive section. According to a further embodiment, the second resistive section also is tapered so that the second resistive section widens toward an output end of the resistor. According to another further embodiment, a third resistive section with one or more meanders is coupled in series between the first and second resistive sections.