Abstract: A positive electrode material for a lithium secondary battery has improved electron conductivity and surface stability because oxidation-treated carbon nanotubes are stably attached to the surface of an active material. According to one embodiment the positive electrode material includes a positive electrode active material core made of a Li—Ni—Co—Mn-M-O-based material (M=transition metal) and an oxidized carbon nanotube coating layer formed on the surface of the positive electrode active material core and including 1% to 3% by weight of oxidation-treated carbon nanotubes (OCNT) relative to 100% by weight of the positive electrode active material core.

Abstract: A positive electrode material for a lithium secondary battery and a manufacturing method therefor are provided. The positive electrode material may have carbon nanotubes stably attached to a surface of an active material and may exhibit increased electron conductivity and improved surface stability. The positive electrode material for a lithium secondary battery may comprises: a positive electrode active material core comprising a Li—Ni—Co—Mn-M-O-based material, where M is a transition metal; and a carbon nanotube coating layer on a surface of the positive electrode active material core. Carbon nanotubes (CNT) may be in an amount of 1-5 wt %, based on 100 wt % of the positive electrode active material core.

Abstract: A display device includes a first electrode disposed on a substrate, a first insulating film disposed on the first electrode and having a first opening formed, a second insulating film disposed on the first insulating film and having a second opening, and a contact electrode electrically contacting at least a portion of the first electrode through the first opening and the second opening, wherein a side surface of the first insulating film defines the first opening, and the second insulating film overlaps the side surface of the first insulating film such that the contact electrode and the first insulating film are not in contact with each other.

Abstract: Integrated circuit devices may include a first upper channel region on a substrate, a first lower channel region between the substrate and the first upper channel region, a first intergate insulator that is between the first lower channel region and the first upper channel region and includes a lower portion and an upper portion, an upper gate electrode, and a lower gate electrode between the substrate and the upper gate electrode. The first upper channel region and the upper portion of the first intergate insulator may be in the upper gate electrode. The first lower channel region and the lower portion of the first intergate insulator are in the lower gate electrode.

Abstract: Integrated circuit devices and methods of forming the same are provided. The methods may include forming a sacrificial layer in a preliminary substrate by adding an element into the preliminary substrate, forming a transistor structure on the preliminary substrate, the transistor structure including a source/drain region, replacing the sacrificial layer with a power contact that comprises an upper surface contacting the source/drain region, and forming a power rail that contacts a lower surface of the power contact.

Abstract: A semiconductor device includes channels, a gate structure, and a source/drain layer. The channels are disposed at a plurality of levels, respectively, and spaced apart from each other in a vertical direction on an upper surface of a substrate. The gate structure is disposed on the substrate, at least partially surrounds a surface of each of the channels, and extends in a first direction substantially parallel to the upper surface of the substrate. The source/drain layer is disposed at each of opposite sides of the gate structure in a second direction substantially parallel to the upper surface of the substrate and substantially perpendicular to the first direction and is connected to sidewalls of the channels. A length of the gate structure in the second direction changes along the first direction at a first height from the upper surface of the substrate in the vertical direction.

Abstract: A semiconductor device includes a substrate, a plurality of channel layers stacked on the substrate, a gate electrode surrounding the plurality of channel layers, and embedded source/drain layers on opposing sides of the gate electrode. The embedded source/drain layers each have a first region and a second region on the first region. The second region has a plurality of layers having different compositions.

Abstract: In some embodiments, a semiconductor device includes a first active pattern extended in a first horizontal direction on a substrate, a second active pattern extended in the first horizontal direction on the substrate, a first bottom gate electrode extended in a second horizontal direction on the first active pattern, a first upper gate electrode extended in the second horizontal direction on the first bottom gate electrode, a second bottom gate electrode extended in the second horizontal direction on the second active pattern, a second upper gate electrode extended in the second horizontal direction on the second bottom gate electrode, and a first gate cut comprising a first portion isolating the first bottom gate electrode from the second bottom gate electrode and a second portion isolating the first upper gate electrode from the second upper gate electrode. A width of the second portion exceeds a width of the first portion.

Abstract: A semiconductor device includes a first transistor in a first region of a substrate and a second transistor in a second region of the substrate. The first transistor includes multiple first semiconductor patterns; a first gate electrode; a first gate dielectric layer; a first source/drain region; and an inner-insulating spacer. The second transistor includes multiple second semiconductor patterns; a second gate electrode; a second gate dielectric layer; and a second source/drain region. The second gate dielectric layer extends between the second gate electrode and the second source/drain region and is in contact with the second source/drain region. The first source/drain region is not in contact with the first gate dielectric layer.

Abstract: Disclosed is a method for controlling a fuel cell of a fuel cell vehicle. The method comprises determining a reference output required for restarting or stopping power generation of a fuel cell according to a required output of a vehicle, correcting the reference output based on vehicle driving condition information comprising a vehicle altitude and coolant temperature and degree of degradation of the fuel cell, and restarting or stopping the power generation of the fuel cell based on the corrected reference output.

Abstract: A display device, includes: a display area and a non-display area; a plurality of signal lines over the display area; and a plurality of connection lines in the display area and connected to the signal lines, wherein the plurality of connection lines includes a plurality of first connection lines connected to the signal lines, respectively, a plurality of third connection lines on a same layer as the first connection lines, and a plurality of second connection lines connecting the first connection lines to the third connection lines.

Abstract: A display device includes: a first base layer including opening; a pad layer disposed on the first base layer, the pad layer overlapping the opening; a second base layer disposed on the pad layer; a pixel circuit layer disposed on the second base layer; and light emitting elements disposed on the pixel circuit layer, the light emitting elements connected to the pixel circuit layer and included in pixels. A color of the first base layer is different from a color of the second base layer.

Abstract: A display device includes a first substrate including a first contact hole, a first barrier insulating layer disposed on the first substrate and including second contact holes, pad parts inserted into some contact holes of the second contact holes, inspection pad parts inserted into other contact holes of the second contact holes, fan-out lines formed of a first metal layer on the first barrier insulating layer and being integral with the pad parts, a display layer disposed on the fan-out lines, and a flexible film disposed below the first substrate and inserted into the first contact hole to be electrically connected to the pad parts. A width of each of the pad parts is greater than a width of each of the second contact holes, and a width of each of the inspection pad parts is smaller than the width of each of the second contact holes.

Abstract: A display device includes: a display panel including a bending area; and a first passivation film and a second passivation film disposed on a first surface of the display panel to be spaced apart from each other. The second passivation film includes a first flat portion and a first stepped portion overlapping the bending area, and a thickness of the first stepped portion is less than a thickness of the first flat portion.

Abstract: A semiconductor device includes a substrate, a lower active pattern which is spaced apart from the substrate and extends in a first direction, an upper active pattern on the lower active pattern, the upper active pattern being spaced apart from the lower active pattern and extending in the first direction, a gate structure on the substrate, the gate structure extending in a second direction intersecting the first direction, and a cutting pattern on the substrate, the cutting pattern extending in the first direction to cut the gate structure. The gate structure includes a lower gate electrode through which the lower active pattern penetrates, an upper gate electrode which is connected to the lower gate electrode and through which the upper active pattern penetrates, and an insulating pattern on one side of the cutting pattern, the insulating pattern being arranged with the upper gate electrode along the second direction.

Abstract: A semiconductor device includes a substrate extending a first direction and a second direction perpendicular to the first direction, an active pattern that protrudes from the substrate in a third direction perpendicular to the first direction and the second direction, a first plurality of lower nanosheets, a second plurality of lower nanosheets stacked spaced apart from the first plurality of lower nanosheets in the first direction, a first plurality of upper nanosheets spaced apart from the first plurality of lower nanosheets in the third direction, and a second plurality of upper nanosheets spaced apart from the second plurality of lower nanosheets in the third direction. A first upper gate electrode surrounding the first plurality of upper nanosheets. A second upper gate electrode surrounding the second plurality of upper nanosheets. A width of the first plurality of upper nanosheets is different from a width of the second plurality of upper nanosheets.

Abstract: A semiconductor device includes a substrate, an active pattern on the substrate, a plurality of lower nanosheets stacked on the active pattern, a separation structure spaced apart from the plurality of lower nanosheets in the vertical direction and disposed on the plurality of lower nanosheets, and including first to third layers sequentially stacked on each other, a plurality of upper nanosheets spaced apart from the separation structure in the vertical direction and disposed on the separation structure, and stacked on the separation structure, and a gate electrode extending in a second horizontal direction different from the first horizontal direction, and surrounding the separation structure, each of the plurality of lower nanosheets, and each of the plurality of upper nanosheets. The first and third layers include the same material, and each of the first layer and the third layer includes a material different from a material of the second layer.

Abstract: A display device includes: a display panel including a bending area; and a first passivation film and a second passivation film disposed on a first surface of the display panel to be spaced apart from each other. The second passivation film includes a first flat portion and a first stepped portion overlapping the bending area, and a thickness of the first stepped portion is less than a thickness of the first flat portion.

Abstract: A battery module includes a battery cell stack in which a plurality of battery cells are stacked, a first frame member accommodating the battery cell stack and having an open upper portion, a second frame member covering the battery cell stack from an upper portion of the first frame member, a connection portion coupling the first frame member and the second frame member to each other, and an insulating sheet disposed between the battery cell stack and the second frame member, wherein the insulating sheet is disposed to extend up to a region in which the connection portion is positioned.

Abstract: A display device may include a display panel including a display area, a non-display area which may be disposed on a periphery of the display area, and a pad area which may be disposed on one side of the non-display area. The display panel may include data lines disposed in the display area of the display panel along a second direction which intersects a first direction, and connection lines disposed in the display area of the display panel along the first direction. A first data line among the data lines may be connected to a first connection line among the connection lines.