Abstract: A table of error counts is generated based on reading wordlines of a flash memory device, the table storing an error count for each combination of wordline and respective read level voltage used to read the wordlines. A plurality of offset wordline groups are generated based on the table of error counts, with each group associating a different read level offset voltage with a plurality of wordline addresses. A storage device is configured to read memory cells using a read level offset voltage of a generated offset wordline group associated with a wordline address of the memory cells to be read. After a predetermined point in a life cycle of a respective memory block, the table is regenerated and plurality of offset wordline groups are regenerated based the regenerated table of error counts.

Abstract: A plurality of flash memory wordlines of a flash storage device are divided into a plurality of wordline groups based on read error counts associated with the wordlines and a plurality of read level offsets. Each wordline group is associated with one of a plurality of read level offsets determined while dividing the plurality of flash memory wordlines, and associations between the plurality of read level offsets and the plurality of wordline groups are stored for use in connection with read levels to read the flash memory wordlines of the respective wordline groups.

Abstract: After a predetermined period of time in a life cycle of a flash memory device, a plurality of reliability values corresponding to a plurality of reads of one or more of the plurality of memory cells are generated; each of the reads using a variation of a predetermined read level voltage. An offset voltage is then identified, offset from the read level voltage. The offset voltage corresponds to a zero crossing point in the range of the reliability values. Once the offset voltage is identified, the read level voltage is set to a calibrated voltage based on the offset voltage.

Abstract: A table of error counts is generated based on reading wordlines of a flash memory device, the table storing an error count for each combination of wordline and respective read level voltage used to read the wordlines. A plurality of offset wordline groups are generated based on the table of error counts, with each group associating a different read level offset voltage with a plurality of wordline addresses. A storage device is configured to read memory cells using a read level offset voltage of a generated offset wordline group associated with a wordline address of the memory cells to be read. After a predetermined point in a life cycle of a respective memory block, the table is regenerated and plurality of offset wordline groups are regenerated based the regenerated table of error counts.

Abstract: After a predetermined period of time in a life cycle of a flash memory device, a plurality of reliability values corresponding to a plurality of reads of one or more of the plurality of memory cells are generated; each of the reads using a variation of a predetermined read level voltage. An offset voltage is then identified, offset from the read level voltage. The offset voltage corresponds to a zero crossing point in the range of the reliability values. Once the offset voltage is identified, the read level voltage is set to a calibrated voltage based on the offset voltage.

Abstract: A plurality of flash memory wordlines of a flash storage device are divided into a plurality of wordline groups based on read error counts associated with the wordlines and a plurality of read level offsets. Each wordline group is associated with one of a plurality of read level offsets determined while dividing the plurality of flash memory wordlines, and associations between the plurality of read level offsets and the plurality of wordline groups are stored for use in connection with read levels to read the flash memory wordlines of the respective wordline groups.

Abstract: Read signals are obtained from memory cells, and a first read signal and a second read signal are identified, from among the plurality of read signals. The first read signal is associated with a first memory cell in a first word line and the second read signal is associated with a second memory cell in a second word line, and the second word line is adjacent to the first word line. An output for the first memory cell is generated, wherein the output is based on the first and the second read signals.

Abstract: Read signals are obtained from memory cells, and a first read signal and a second read signal are identified, from among the plurality of read signals. The first read signal is associated with a first memory cell in a first word line and the second read signal is associated with a second memory cell in a second word line, and the second word line is adjacent to the first word line. An output for the first memory cell is generated, wherein the output is based on the first and the second read signals.

Abstract: Aspects of the subject technology relate to a method for reading information stored in a flash memory device. In some implementations, the method can include steps including, obtaining a first read signal of a first cell, wherein the first cell is located in a first word line and in a first bit line in the flash memory device, obtaining a programming level of a second cell, wherein the second cell is located in a second word line and in the first bit line, and wherein the second word line is adjacent to the first word line. In certain aspects, the method may further comprise steps for obtaining decoding information for the first cell based on the programming level of the second cell, wherein the decoding information is derived from a first set of reference voltage distributions corresponding to the obtained programming level of the second cell. A data storage system and a non-transitory machine readable storage medium are also provided.

Abstract: Aspects of the subject technology relate to a method for reading information stored in a flash memory device. In some implementations, the method can include steps including, obtaining a first read signal of a first cell, wherein the first cell is located in a first word line and a first bit line in the flash memory device, obtaining a programming level of a second cell, wherein the second cell is located in a second word line and the first bit line, and wherein the second word line is adjacent to the first word line. In certain aspects, the method may further comprise steps for obtaining decoding information for the first cell based on the programming level of the second cell. A data storage system and article of manufacture are also provided.

Abstract: Aspects of the subject technology encompass a method for retrieving information stored in flash memory. In certain implementations, the method can include operations for reading a plurality of memory cells in a word line, generating a plurality of read signals based on the reading of the plurality of memory cells and identifying, from among the plurality of read signals, a first read signal associated with a first memory cell and a second read signal associated with a second memory cell, wherein the first memory cell is adjacent to the second memory cell in the word line. In certain aspects, the method can further include operations for generating an output for the first memory cell, wherein the output is based on the first and second read signals. A data storage system and article of manufacture are also provided.