Patents by Inventor Shabnam Ghotbi

Shabnam Ghotbi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Silicon-based vacuum transistors and integrated circuits
    Patent number: 11749487
    Abstract: A field emitter array (FEA) vacuum transistor is disclosed which includes a substrate and a plurality of nanorods formed of a first polarity dopant on the substrate, wherein the dopant density is between about 1013 cm?3 to about 1015 cm?3.
    Type: Grant
    Filed: March 22, 2022
    Date of Patent: September 5, 2023
    Assignee: Purdue Research Foundation
    Inventors: Saeed Mohammadi, Shabnam Ghotbi
  • SILICON-BASED VACUUM TRANSISTORS AND INTEGRATED CIRCUITS
    Publication number: 20220301805
    Abstract: A field emitter array (FEA) vacuum transistor is disclosed which includes a substrate and a plurality of nanorods formed of a first polarity dopant on the substrate, wherein the dopant density is between about 1013 cm?3 to about 1015 cm?3.
    Type: Application
    Filed: March 22, 2022
    Publication date: September 22, 2022
    Applicant: Purdue Research Foundation
    Inventors: Saeed Mohammadi, Shabnam Ghotbi