Abstract: The present disclosure provides a method for manufacturing a terahertz (THz) device. The method includes a step of forming a light-absorbing structure on a substrate by using a chemical vapor deposition (CVD) process. The substrate includes a semiconductor structure, a sapphire substrate, a quartz substrate, or a combination thereof. The light-absorbing structure includes a semiconductor material, a two-dimensional material, a low-dimensional material, a magnetic material, a topological material, or a combination thereof.

Abstract: A manufacturing method of a filter, including the following steps: defining an adhesive layer on a surface of a substrate according to a filter pattern; covering the surface of the substrate by a conductive layer, wherein the conductive layer comprises a first covering part and a second covering part, wherein the first covering part and the second covering part are non-overlapping. In an aspect, the first covering part of the conductive layer is attached to the adhesive layer according to the filter pattern and the second covering part is not attached to the adhesive layer. In an aspect, the second covering part of the conductive layer is attached to the surface of the substrate to form the filter pattern.

Abstract: A compressed sensing imaging method and a compressed sensing imaging system are provided. In the method, multiple grayscale masks having multiple elements with grayscale values represented by floating-point values or continuous values are generated as sensing matrices based on a compressed sensing theory. A spatial light modulator is controlled to modulate an electromagnetic wave projected on an object under test according to the grayscale value of each element in each grayscale mask, and a physical property of the electromagnetic wave passing through the object under test is detected to obtain multiple measured values. An image reconstruction algorithm is executed to reconstruct an image of the object under test by using the grayscale masks and the measured values obtained from the electromagnetic wave modulated by each grayscale mask.

Abstract: A terahertz modulator includes a substrate and an organic semiconductor layer. A material of the organic semiconductor layer is graphitic carbon nitride, and the organic semiconductor layer is coated on a surface of the substrate. The terahertz modulator has a high on-off contrast and is able to reach a high modulation speed. A terahertz spatial light modulator includes a terahertz modulator and an automatic pumped light spatial modulator. The automatic pumped light spatial modulator is optically connected with the terahertz modulator. The terahertz spatial light modulator generates a patterned terahertz light, and the terahertz spatial light modulator has a high on-off contrast and is able to reach a high modulation speed.

Abstract: A tomography method, system, and apparatus based on time-domain spectroscopy are provided. A light emitter is controlled to emit a pulse beam to scan a cross-section of an object to be measured while using a light receiver to detect the pulse beam passing through the object to be measured, so as to obtain time-domain pulse signals at locations of a scan path. A scan angle is repeatedly changed to perform the scanning and detecting steps, so as to collect the time-domain pulse signals of multiple angles of the cross-section as a time information set. Features are retrieved from the time-domain pulse signals using kernels of a trained machine learning model, which is trained with time information sets and corresponding ground truth images of cross-sections to learn the kernels for retrieving the features. The retrieved features are converted into a spatial domain to reconstruct a cross-sectional image of the object.

Abstract: A tomography method, system, and apparatus based on time-domain spectroscopy are provided. A light emitter is controlled to emit a pulse beam to scan a cross-section of an object to be measured while using a light receiver to detect the pulse beam passing through the object to be measured, so as to obtain time-domain pulse signals at locations of a scan path. A scan angle is repeatedly changed to perform the scanning and detecting steps, so as to collect the time-domain pulse signals of multiple angles of the cross-section as a time information set. Features are retrieved from the time-domain pulse signals using kernels of a trained machine learning model, which is trained with time information sets and corresponding ground truth images of cross-sections to learn the kernels for retrieving the features. The retrieved features are converted into a spatial domain to reconstruct a cross-sectional image of the object.

Abstract: A photoconductive device that includes a semiconductor substrate, an antenna assembly, and a photoconductive assembly with one or more plasmonic contact electrodes. The photoconductive assembly can be provided with plasmonic contact electrodes that are arranged on the semiconductor substrate in a manner that improves the quantum efficiency of the photoconductive device by plasmonically enhancing the pump absorption into the photo-absorbing regions of semiconductor substrate. In one exemplary embodiment, the photoconductive device is arranged as a photoconductive source and is pumped at telecom pump wavelengths (e.g., 1.0-1.6 ?m) and produces milliwatt-range power levels in the terahertz (THz) frequency range.

Abstract: A photoconductive device that includes a semiconductor substrate, an antenna assembly, and a photoconductive assembly with one or more plasmonic contact electrodes. The photoconductive assembly can be provided with plasmonic contact electrodes that are arranged on the semiconductor substrate in a manner that improves the quantum efficiency of the photoconductive device by plasmonically enhancing the pump absorption into the photo-absorbing regions of semiconductor substrate. In one exemplary embodiment, the photoconductive device is arranged as a photoconductive source and is pumped at telecom pump wavelengths (e.g., 1.0-1.6 ?m) and produces milliwatt-range power levels in the terahertz (THz) frequency range.