Abstract: An anti-floating circuit including a first pull-high circuit, a first pull-low circuit and a first control circuit is provided. The first pull-high circuit includes a first P-type transistor and a second P-type transistor and is coupled to a first power terminal. The first pull-low circuit includes a first N-type transistor and a second N-type transistor and is coupled to a second power terminal. A first path is between the first P-type transistor and the first N-type transistor. A second path is between the second P-type transistor and the second N-type transistor. A third path is between the first P-type transistor and the second power terminal. In the first mode, the control circuit turns on the first and second paths and turns off the third path. In the second mode, the control circuit turns off the first and second paths and turns on the third path.

Abstract: A protection device including a substrate, a first doped region, a first well region, a second doped region, a third doped region, a fourth doped region, a second well region, a fifth doped region, and a sixth doped region is provided. The substrate, the first well region, and the third and the fifth doped regions have a first conductivity type. The first doped and the second well regions are disposed in the substrate. The first, second, fourth, and sixth doped regions and the second well region have a second conductivity type. The first well and the second doped regions are disposed in the first doped region. The second doped region is not in contact with the first well region. The third and fourth doped regions are disposed in the first well region. The fifth and sixth doped regions are disposed in the second well region.

Abstract: An electrostatic discharge protection circuit is provided. The electrostatic discharge protection circuit includes a first metal-oxide-semiconductor (MOS) transistor, a second MOS transistor, and a third MOS transistor. The first MOS transistor is coupled between a power terminal and a ground terminal. The first MOS transistor has a control electrode terminal coupled to a first node to receive a first signal. The second MOS transistor has a control electrode terminal and a first electrode terminal both coupled to the first node and a second electrode terminal coupled to a bulk of the first MOS transistor. The third MOS transistor has a control electrode terminal coupled to a second node to receive a second node, a first electrode terminal coupled to the first node, and a second electrode terminal coupled to the bulk of the first MOS transistor. The first signal is inverse to the second signal.

Abstract: A power-on control circuit controlling a first output switch and a second output switch is provided. A detecting circuit detects a first voltage to generate a detection signal to a first node. A switching circuit receives the first voltage and a second voltage and transmits the first or second voltage to a second node according to the voltage level of the first node. A setting circuit generates a feedback signal to the first node according to a voltage level of the second node. When the first voltage reaches a first pre-determined value and the second voltage has not reached a second pre-determined value, the switching circuit transmits the second voltage to the second node. When the second voltage reaches the second pre-determined value, the switching circuit transmits the first voltage to the second node.

Abstract: A power-on control circuit is provided. The power-on control circuit includes first and second power terminals, a switch circuit, an inverter chain circuit, and a capacitor. The switch circuit has a control terminal receiving a first control signal, an input terminal coupled to the second power terminal, and an output terminal coupled to a first node. The inverter chain circuit has an input terminal coupled to the first node and generates the first control signal. The capacitor is coupled between the first node and a ground. When the first power terminal receives a first voltage and the second power terminal does not receive a second voltage, the switch circuit is turned on according to the first control signal. When the first power terminal receives the first voltage and the second power terminal receives the second voltage, the switch circuit is turned off according to the first control signal.

Abstract: A power-on control circuit is provided. The power-on control circuit includes first and second power terminals, a switch circuit, an inverter chain circuit, and a capacitor. The switch circuit has a control terminal receiving a first control signal, an input terminal coupled to the second power terminal, and an output terminal coupled to a first node. The inverter chain circuit has an input terminal coupled to the first node and generates the first control signal. The capacitor is coupled between the first node and a ground. When the first power terminal receives a first voltage and the second power terminal does not receive a second voltage, the switch circuit is turned on according to the first control signal. When the first power terminal receives the first voltage and the second power terminal receives the second voltage, the switch circuit is turned off according to the first control signal.

Abstract: A power-on control circuit is provided. A first detection circuit detects the voltage of a first voltage source to generate a first detection signal to a first node. A switching circuit is coupled to the first voltage source and a second voltage source and outputs the voltage of the first voltage source or the voltage of the second voltage source to a second node according to the voltage level of the first node. A first buffer generates a feedback signal and a control signal according to the voltage level of the second node. A second detection circuit generates a second detection signal according to the feedback signal, the control signal, the voltage of the second voltage source and a recovery signal. A second buffer generates the recovery signal according to the second detection signal.

Abstract: An electrostatic discharge (ESD) protection circuit is provided. A detector is coupled between a first input-output pad and a second input-output pad and detects the voltage levels of the first and second input-output pads to generate a detection signal. A inverter generates a control signal according to the detection signal. A control element is coupled between the first input-output pad and a first node. A current release element is coupled between the first node and the second input-output pad. When the detection signal is at a specific level, the control element and the current release element provide a discharge path to release an ESD current from the first input-output pad to the second input-output pad. When the detection signal is not at the specific level, the control element and the current release element do not provide a discharge path.

Abstract: A driving circuit controlling a voltage level of an input/output pad and having an electrostatic discharge (ESD) protection function comprises a detector, a controller, and a release control element. The detector is configured to couple to a power terminal and the input/output pad. The controller is coupled to the detector. The release control element is coupled to the power terminal or the input/output pad and coupled to the controller. When an ESD event occurs at the power terminal or the input/output pad, the detector activates the controller to a control signal to control the voltage level of the input/output pad.

Abstract: A protection device including a substrate, a first doped region, a first well region, a second doped region, a third doped region, a fourth doped region, a second well region, a fifth doped region, and a sixth doped region is provided. The substrate, the first well region, and the third and the fifth doped regions have a first conductivity type. The first doped and the second well regions are disposed in the substrate. The first, second, fourth, and sixth doped regions and the second well region have a second conductivity type. The first well and the second doped regions are disposed in the first doped region. The second doped region is not in contact with the first well region. The third and fourth doped regions are disposed in the first well region. The fifth and sixth doped regions are disposed in the second well region.

Abstract: An electrostatic discharge protection circuit is provided. The electrostatic discharge protection circuit includes a first metal-oxide-semiconductor (MOS) transistor, a second MOS transistor, and a third MOS transistor. The first MOS transistor is coupled between a power terminal and a ground terminal. The first MOS transistor has a control electrode terminal coupled to a first node to receive a first signal. The second MOS transistor has a control electrode terminal and a first electrode terminal both coupled to the first node and a second electrode terminal coupled to a bulk of the first MOS transistor. The third MOS transistor has a control electrode terminal coupled to a second node to receive a second node, a first electrode terminal coupled to the first node, and a second electrode terminal coupled to the bulk of the first MOS transistor. The first signal is inverse to the second signal.

Abstract: A driver circuit has a pad that may be utilized for programming a core circuit or receiving a data signal. A trace high circuit receives a pad voltage signal from the pad, and outputs a trace high voltage approximating a higher voltage of the pad voltage signal and the power supply voltage. A level shifter and a first inverter output a pull high control signal generated by inverting and level shifting a programming control signal. An ESD blocking circuit selectively blocks the pad voltage signal from reaching the core circuit depending on the pad voltage signal and the level-shifted programming control signal. A pull high circuit receives the pull high control signal and the power supply voltage, and outputs the power supply voltage to the core circuit when the pull high control signal is lower than the power supply voltage.

Abstract: A high-voltage selecting circuit generates an output voltage with no voltage drop by means of an auxiliary NMOS transistor turning on the corresponding selecting PMOS transistor of the high-voltage selecting circuit when the voltage levels of a first input voltage and a second input voltage are equal. In addition, when one of the first input voltage and the second input voltage is higher than the other one, the high-voltage selecting circuit avoids the leakage current by means of an auxiliary PMOS transistor turning off the corresponding selecting PMOS transistor of the high-voltage selecting circuit. In this way, the high-voltage selecting circuit can correctly generate the output voltage according to the first input voltage and the second input voltage, and avoid the leakage current at the same time.

Abstract: A method for operating a one-time programmable read-only memory (OTP-ROM) is provided. The OTP-ROM comprises a first gate and a second gate respectively disposed on a gate dielectric layer between a first doped region and a second doped region on a substrate, wherein the first gate is adjacent to the first doped region and coupled to the first doped region, the second gate is adjacent to the second doped region, the first gate is electrically coupled grounded, and the OTP-ROM is programmed through a breakdown effect. The method comprises a step of programming the OTP-ROM under the conditions that a voltage of the second doped region is higher than a voltage of the first doped region, the voltage of the second gate is higher than a threshold voltage to pass the voltage of the second doped region, and the first doped region and the substrate are at a reference voltage.

Abstract: An electrostatic discharge (ESD) protection circuit is coupled between a first terminal and a second terminal of an integrated circuit. The integrated circuit receives an input signal through the first terminal. The second terminal is coupled to a voltage source. The ESD protection circuit includes a PMOS transistor and a deep N-well NMOS transistor. When the static electricity is inputted to the first terminal, the static electricity flows to the voltage source through the corresponding parasitic diode and the corresponding parasitic bipolar transistor of the PMOS transistor and the deep N-well NMOS transistor. In addition, the input signal is not affected by the ESD protection circuit because the parasitic diodes of the PMOS transistor and the deep N-well NMOS transistor are reversely connected. Thus, the ESD protection circuit prevents the integrated circuit from being damaged by the static electricity and increases the operation voltage range of the input signal.

Abstract: A high-voltage selecting circuit generates an output voltage with no voltage drop by means of an auxiliary NMOS transistor turning on the corresponding selecting PMOS transistor of the high-voltage selecting circuit when the voltage levels of a first input voltage and a second input voltage are equal. In addition, when one of the first input voltage and the second input voltage is higher than the other one, the high-voltage selecting circuit avoids the leakage current by means of an auxiliary PMOS transistor turning off the corresponding selecting PMOS transistor of the high-voltage selecting circuit. In this way, the high-voltage selecting circuit can correctly generate the output voltage according to the first input voltage and the second input voltage, and avoid the leakage current at the same time.

Abstract: A high voltage tolerance circuit includes a first transistor, a second transistor, a third transistor, and a latch-up device. The first transistor and the second transistor are controlled by a control signal. The gate of the third transistor is coupled to a ground through the first transistor. The gate of the third transistor is coupled to an I/O pad through the second transistor. The third transistor is coupled between a power supply and a node. The latch-up device is coupled between the node and the I/O pad.

Abstract: An electrostatic discharge (ESD) protection circuit is electrically connected to a core circuit for preventing ESD charges from reaching the core circuit. The ESD protection circuit includes a pad, a pass transistor, a transistor, a capacitor, a resistor, and a delay trigger unit. The pass transistor controls passage of charges from the pad to the core circuit. The transistor sinks ESD charges during an ESD zapping event. The capacitor and the resistor couple voltage at the pad to a control electrode of the transistor for turning on the transistor during the ESD zapping event. The delay trigger unit retards transmission of low voltage to a control electrode of the pass transistor for keeping the pass transistor turned off during the ESD zapping event.

Abstract: A flash memory circuit with ESD protection includes a plurality of flash memory blocks, a pad, an ESD transistor, a pass transistor, and a gate driving circuit. The gate driving circuit has an inverter circuit for receiving a control voltage and outputting an output voltage, a resistor for receiving a pad voltage from the pad, and a capacitor for delaying a change in the control voltage. The ESD transistor is coupled to the pad, a power supply, and the output terminal of the inverter circuit. The pass transistor is coupled to one of the flash memory blocks and the pad, and is controlled by the output voltage. A well terminal of the pass transistor is coupled to the resistor for keeping the pass transistor turned off during electrostatic discharge through the pad.

Abstract: A driver circuit has a pad that may be utilized for programming a core circuit or receiving a data signal. A trace high circuit receives a pad voltage signal from the pad, and outputs a trace high voltage approximating a higher voltage of the pad voltage signal and the power supply voltage. A level shifter and a first inverter output a pull high control signal generated by inverting and level shifting a programming control signal. An ESD blocking circuit selectively blocks the pad voltage signal from reaching the core circuit depending on the pad voltage signal and the level-shifted programming control signal. A pull high circuit receives the pull high control signal and the power supply voltage, and outputs the power supply voltage to the core circuit when the pull high control signal is lower than the power supply voltage.