Patents by Inventor Shao-Hua Huang

Shao-Hua Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250029934
    Abstract: A light-emitting diode includes: a substrate, an epitaxial layer and a protective layer; the epitaxial layer is disposed on the substrate and includes a first semiconductor layer, an active layer, and a second semiconductor layer stacked sequentially in that order; the protective layer covers the epitaxial layer; the epitaxial layer is divided into chiplets, each chiplet includes transverse and longitudinal sidewalls intersecting in transverse and longitudinal directions, dicing channels are defined between adjacent chiplets, the dicing channels include transverse and longitudinal dicing channels extending respectively in the transverse and longitudinal directions, the protective layer covers the dicing channels and chiplet sidewalls, a patterned structure is disposed on the protective layer in an intersecting area of the transverse and the longitudinal dicing channels, and includes a groove extending toward the substrate.
    Type: Application
    Filed: July 13, 2024
    Publication date: January 23, 2025
    Inventors: Gong CHEN, Yashu ZANG, Chunhsien LEE, Weichun TSENG, Chung-Ying CHANG, Jiming CAI, Shao-hua HUANG, Chunlan HE, Ziyan PAN
  • Patent number: 12206047
    Abstract: A light-emitting diode (LED) chip includes a substrate and an epitaxial structure. The epitaxial structure includes a first semiconductor layer, an active layer and a second semiconductor layer that are sequentially disposed on the substrate in such order. The second semiconductor layer has a light-emitting surface that is opposite to the active layer and that is formed with a microstructure. The microstructure includes a plurality of first protrusions that are separately disposed on the light-emitting surface, and a plurality of second protrusions that are disposed on the first protrusions and on the light-emitting surface between any two adjacent ones of the first protrusions.
    Type: Grant
    Filed: February 22, 2022
    Date of Patent: January 21, 2025
    Assignee: Xiamen Sanan Optoelectronics Technology Co., Ltd.
    Inventors: Poyang Chang, Linrong Cai, Shao-Hua Huang, Liqin Zhu, Shuangliang Liu
  • Patent number: 12199217
    Abstract: A light-emitting chip includes a light-emitting unit, first and second electrode units. The light-emitting unit includes first and second conductivity type semiconductor layers and an active layer. The first electrode unit includes two first electrodes which are spaced apart from each other by a first distance, and which are electrically connected to the first conductivity type semiconductor layer. The second electrode unit includes two second electrodes electrically connected to the second conductivity type semiconductor layer. The first and second electrode units are spaced apart from each other by a second distance, and the first distance is greater than the second distance.
    Type: Grant
    Filed: January 4, 2022
    Date of Patent: January 14, 2025
    Assignee: LUMINUS (XIAMEN) CO., LTD.
    Inventors: Xiaoqiang Zeng, Kunte Lin, Jianfeng Yang, Kaiqing Xu, Shao-Hua Huang
  • Publication number: 20240421251
    Abstract: A LED chip includes a current blocking layer that includes a first portion and a second portion and a current expansion layer defined with a first opening; and the first portion is disposed in the first opening of the current expansion layer. A first gap is defined between the first portion and the current expansion layer; a second gap is defined between the first portion and the second portion; an electrode structure covers the first portion and is in contact with an upper surface of a semiconductor light-emitting sequence stacking layer through the first gap; at least a portion of an extension strip is formed on the second portion of the current blocking layer and the current expansion layer; a part of an edge of the first opening of the current expansion layer is disposed on the second portion of the current blocking layer.
    Type: Application
    Filed: June 7, 2024
    Publication date: December 19, 2024
    Inventors: Gong CHEN, Yashu ZANG, Chunhsien LEE, Weichun TSENG, Chunlan HE, Chung-Ying CHANG, Jiming CAI, Shao-hua HUANG
  • Publication number: 20240266463
    Abstract: A light-emitting device includes a semiconductor epitaxial structure that has a first surface and a second surface, and that includes a first semiconductor layer, an active layer, and a second semiconductor layer. The active layer includes a quantum well structure having multiple periodic units, each including a well layer and a barrier layer greater in bandgap than the well layer. The bandgap of the barrier layer of at least one of the periodic units proximate to the first surface is smaller than that proximate to the second surface, and a thickness of the well layer of at least one of the periodic units proximate to the first surface is greater than that proximate to the second surface. In some embodiments, a bandgap of a second spacing layer disposed between the active and second semiconductor layers increases in a direction from the first surface to the second surface.
    Type: Application
    Filed: July 6, 2023
    Publication date: August 8, 2024
    Inventors: Jinghua CHEN, Yenchin WANG, Chong XU, Shasha CHEN, Kunte LIN, Kaiqing XU, Shihchieh HOU, Shao-Hua HUANG, Huanshao KUO, Yu-Ren PENG
  • Publication number: 20240243227
    Abstract: Provided are an ultraviolet light emitting diode (LED) and a manufacturing method thereof. The manufacturing method includes: providing an LED wafer including a substrate and a semiconductor stacked layer, the semiconductor stacked layer has a lower surface and an upper surface, the semiconductor stacked layer includes a first semiconductor layer, a light emitting layer and a second semiconductor layer; focusing a first laser beam and a second laser beam into the substrate, a focusing position of the first laser beam is closer to the lower surface than that of the second laser beam, the first laser beam is focused to form at least one first laser cutting line, laser scratches of each first laser cutting line are quasi-circular, and the at least one first laser cutting line includes a laser cutting line closest to the lower surface; and separating the LED wafer to form LED chips.
    Type: Application
    Filed: January 18, 2024
    Publication date: July 18, 2024
    Inventors: Gong CHEN, Yashu ZANG, Jianbin CHEN, Bin JIANG, Chung-Ying CHANG, Shao-Hua HUANG
  • Patent number: 12032276
    Abstract: A light emitting diode includes a semiconductor layer sequence stack, a reflective polarizing layer and a diffuse reflection structure. The semiconductor layer sequence stack includes first and second semiconductor layers, and a light emitting layer disposed therebetween. The reflective polarizing layer is disposed on the semiconductor layer sequence stack. The diffuse reflection structure is disposed on the light emitting layer opposite to the reflective polarizing layer. A light emitting device including the light emitting diode, and a projector including the light emitting device are also provided.
    Type: Grant
    Filed: July 1, 2021
    Date of Patent: July 9, 2024
    Assignee: LUMINUS (XIAMEN) CO., LTD.
    Inventors: Shao-Hua Huang, Xiaoqiang Zeng, Jianfeng Yang, Zechao Huang, Bosong Chen
  • Patent number: 11990572
    Abstract: A light-emitting diode includes an epitaxial layered structure, a reflective layered unit, and a light-transmissive structure. The epitaxial layered structure has opposite upper and lower surfaces and a side surface interconnecting the upper and lower surfaces. The reflective layered unit is disposed on the lower surface of the epitaxial layered structure. The light-transmissive structure covers the upper surface of the epitaxial layered structure and a portion of the side surface of the epitaxial layered structure, and is configured to allow light emitted from the epitaxial layered structure to exit therefrom at a light-exit angle of not smaller than 125°.
    Type: Grant
    Filed: September 10, 2020
    Date of Patent: May 21, 2024
    Assignee: LUMINUS(XIAMEN) CO., LTD.
    Inventors: Xiaoqiang Zeng, Fuxing Shi, Shao-Hua Huang, Lixun Yang
  • Publication number: 20240106201
    Abstract: A laser diode includes a substrate, an epitaxial structure, an electrode contacting layer and an optical cladding layer. The epitaxial structure is disposed on the substrate, and is formed with a ridge structure opposite to the substrate. The electrode contacting layer is disposed on a top surface of the ridge structure. The optical cladding layer has a refractive index smaller than that of the electrode contacting layer. The optical cladding layer includes a first cladding portion which covers side walls of the ridge structure, and a second cladding portion which is disposed on a portion of the top surface of the ridge structure. A method for manufacturing the abovementioned laser diode is also disclosed.
    Type: Application
    Filed: December 11, 2023
    Publication date: March 28, 2024
    Inventors: Zhibai ZHONG, Tao YE, Min ZHANG, Shao-Hua HUANG, Shuiqing LI
  • Publication number: 20240030376
    Abstract: A light-emitting device includes a semiconductor epitaxial structure that has a first surface and a second surface, and that includes a first semiconductor layer, an active layer, and a second semiconductor layer. The active layer includes a quantum well structure having multiple periodic units, each including a well layer and a barrier layer greater in bandgap than the well layer. The bandgap of the barrier layer of at least one of the periodic units proximate to the first surface is smaller than that proximate to the second surface, and a thickness of the well layer of at least one of the periodic units proximate to the first surface is greater than that proximate to the second surface. In some embodiments, a bandgap of a second spacing layer disposed between the active and second semiconductor layers increases in a direction from the first surface to the second surface.
    Type: Application
    Filed: July 6, 2023
    Publication date: January 25, 2024
    Inventors: Jinghua CHEN, Yenchin WANG, Chong XU, Shasha CHEN, Kunte LIN, Kaiqing XU, Shihchieh HOU, Shao-Hua HUANG, Huanshao KUO, Yu-Ren PENG
  • Patent number: 11870219
    Abstract: A laser diode includes a substrate, an epitaxial structure, an electrode contacting layer and an optical cladding layer. The epitaxial structure is disposed on the substrate, and is formed with a ridge structure opposite to the substrate. The electrode contacting layer is disposed on a top surface of the ridge structure. The optical cladding layer has a refractive index smaller than that of the electrode contacting layer The optical cladding layer includes a first cladding portion which covers side walls of the ridge structure, and a second cladding portion which is disposed on a portion of the top surface of the ridge structure. A method for manufacturing the abovementioned laser diode is also disclosed.
    Type: Grant
    Filed: April 12, 2021
    Date of Patent: January 9, 2024
    Assignee: Quanzhou San'An Semiconductor Technology Co., Ltd.
    Inventors: Zhibai Zhong, Tao Ye, Min Zhang, Shao-Hua Huang, Shuiqing Li
  • Publication number: 20230238482
    Abstract: A light-emitting device includes a semiconductor epitaxial structure that has a first surface and a second surface opposite to the first surface, and that includes a first semiconductor layer, an active layer, and a second semiconductor layer sequentially stacked on one another in such order from the first surface to the second surface. The active layer includes a quantum well structure having multiple periodic units each of which includes a well layer and a barrier layer disposed sequentially in such order. A bandgap of the barrier layer is greater than that of the well layer, and the bandgaps of the barrier layers gradually increase in a direction from the first surface of the semiconductor epitaxial structure to the second surface of the semiconductor epitaxial structure.
    Type: Application
    Filed: January 10, 2023
    Publication date: July 27, 2023
    Inventors: Jinghua CHEN, Yenchin WANG, Chong XU, Huanshao KUO, Shao-Hua HUANG, Yu-Ren PENG
  • Patent number: 11677055
    Abstract: A light emitting device includes at least one light emitting and connecting unit that includes an epitaxial layer structure and a metallic connecting layer structure, and an insulating substrate that has a main substrate body and first and second contact members. The connecting layer structure interconnects the epitaxial layer structure and the main substrate body, and is completely plane at least right under the epitaxial layer structure. The contact members extend from a first surface to a second surface on the main substrate body, and are disposed outside an imaginary projection of the epitaxial layer structure on the main substrate body. The first contact member is electrically connected with the connecting layer structure. Alight emitting apparatus including the device is also disclosed.
    Type: Grant
    Filed: February 11, 2020
    Date of Patent: June 13, 2023
    Assignee: Xiamen San'an Optoelectronics Technology Co., Ltd.
    Inventors: Xiaoqiang Zeng, Shao-Hua Huang, Jianfeng Yang, Lixun Yang
  • Publication number: 20220359787
    Abstract: A micro light emitting diode includes a semiconductor unit having a first surface and a second surface, and including a first type semiconductor layer, an active layer, and a second type semiconductor layer. The first surface has a roughened portion that is located within a projection of the active layer. The projection of the roughened portion has a projected area not greater than that of the active layer. A micro light emitting device and a display are also disclosed.
    Type: Application
    Filed: May 6, 2022
    Publication date: November 10, 2022
    Inventors: YENCHIN WANG, JINGHUA CHEN, HUANSHAO KUO, SHAO-HUA HUANG, SHUIQING LI
  • Publication number: 20220278252
    Abstract: A light-emitting diode (LED) chip includes a substrate and an epitaxial structure. The epitaxial structure includes a first semiconductor layer, an active layer and a second semiconductor layer that are sequentially disposed on the substrate in such order. The second semiconductor layer has a light-emitting surface that is opposite to the active layer and that is formed with a microstructure. The microstructure includes a plurality of first protrusions that are separately disposed on the light-emitting surface, and a plurality of second protrusions that are disposed on the first protrusions and on the light-emitting surface between any two adjacent ones of the first protrusions.
    Type: Application
    Filed: February 22, 2022
    Publication date: September 1, 2022
    Inventors: Poyang CHANG, Linrong CAI, Shao-Hua HUANG, Liqin ZHU, Shuangliang LIU
  • Publication number: 20220216372
    Abstract: A light-emitting chip includes a light-emitting unit, first and second electrode units. The light-emitting unit includes first and second conductivity type semiconductor layers and an active layer. The first electrode unit includes two first electrodes which are spaced apart from each other by a first distance, and which are electrically connected to the first conductivity type semiconductor layer. The second electrode unit includes two second electrodes electrically connected to the second conductivity type semiconductor layer. The first and second electrode units are spaced apart from each other by a second distance, and the first distance is greater than the second distance.
    Type: Application
    Filed: January 4, 2022
    Publication date: July 7, 2022
    Inventors: Xiaoqiang ZENG, Kunte LIN, Jianfeng YANG, Kaiqing XU, Shao-Hua HUANG
  • Publication number: 20220004089
    Abstract: A light emitting diode includes a semiconductor layer sequence stack, a reflective polarizing layer and a diffuse reflection structure. The semiconductor layer sequence stack includes first and second semiconductor layers, and a light emitting layer disposed therebetween. The reflective polarizing layer is disposed on the semiconductor layer sequence stack. The diffuse reflection structure is disposed on the light emitting layer opposite to the reflective polarizing layer. A light emitting device including the light emitting diode, and a projector including the light emitting device are also provided.
    Type: Application
    Filed: July 1, 2021
    Publication date: January 6, 2022
    Inventors: Shao-Hua HUANG, Xiaoqiang ZENG, Jianfeng YANG, Zechao HUANG, Bosong CHEN
  • Publication number: 20210384702
    Abstract: A laser diode includes a substrate, an epitaxial structure, an electrode contacting layer and an optical cladding layer. The epitaxial structure is disposed on the substrate, and is formed with a ridge structure opposite to the substrate. The electrode contacting layer is disposed on a top surface of the ridge structure. The optical cladding layer has a refractive index smaller than that of the electrode contacting layer The optical cladding layer includes a first cladding portion which covers side walls of the ridge structure, and a second cladding portion which is disposed on a portion of the top surface of the ridge structure. A method for manufacturing the abovementioned laser diode is also disclosed.
    Type: Application
    Filed: April 12, 2021
    Publication date: December 9, 2021
    Inventors: Zhibai Zhong, Tao YE, Min ZHANG, Shao-Hua HUANG, Shuiqing LI
  • Publication number: 20210091276
    Abstract: A light-emitting diode includes an epitaxial layered structure, a reflective layered unit, and a light-transmissive structure. The epitaxial layered structure has opposite upper and lower surfaces and a side surface interconnecting the upper and lower surfaces. The reflective layered unit is disposed on the lower surface of the epitaxial layered structure. The light-transmissive structure covers the upper surface of the epitaxial layered structure and a portion of the side surface of the epitaxial layered structure, and is configured to allow light emitted from the epitaxial layered structure to exit therefrom at a light-exit angle of not smaller than 125°.
    Type: Application
    Filed: September 10, 2020
    Publication date: March 25, 2021
    Inventors: Xiaoqiang ZENG, Fuxing SHI, Shao-Hua HUANG, Lixun YANG
  • Publication number: 20200395522
    Abstract: A light emitting device includes at least one light emitting and connecting unit that includes an epitaxial layer structure and a metallic connecting layer structure, and an insulating substrate that has a main substrate body and first and second contact members. The connecting layer structure interconnects the epitaxial layer structure and the main substrate body, and is completely plane at least right under the epitaxial layer structure. The contact members extend from a first surface to a second surface on the main substrate body, and are disposed outside an imaginary projection of the epitaxial layer structure on the main substrate body. The first contact member is electrically connected with the connecting layer structure. Alight emitting apparatus including the device is also disclosed.
    Type: Application
    Filed: February 11, 2020
    Publication date: December 17, 2020
    Inventors: Xiaoqiang ZENG, Shao-Hua HUANG, Jianfeng YANG, Lixun YANG