Abstract: The invention is directed to compounds of formula I: wherein Ar, r, R3, X, and R5-7 are as defined in the specification, and pharmaceutically acceptable salts thereof. The compounds of formula I have AT1 receptor antagonist activity and neprilysin inhibition activity. The invention is also directed to pharmaceutical compositions comprising such compounds; methods of using such compounds; and a process and intermediates for preparing such compounds.

Abstract: The invention is directed to compounds of formula I: wherein Ar, r, R3, X, and R5-7 are as defined in the specification, and pharmaceutically acceptable salts thereof. The compounds of formula I have AT1 receptor antagonist activity and neprilysin inhibition activity. The invention is also directed to pharmaceutical compositions comprising such compounds; methods of using such compounds; and a process and intermediates for preparing such compounds.

Abstract: The invention is directed to compounds of formula I: wherein Ar, r, R3, X, and R5-7 are as defined in the specification, and pharmaceutically acceptable salts thereof. The compounds of formula I have AT1 receptor antagonist activity and neprilysin inhibition activity. The invention is also directed to pharmaceutical compositions comprising such compounds; methods of using such compounds; and a process and intermediates for preparing such compounds.

Abstract: A method of removing polysilicon in preference to silicon dioxide and/or silicon nitride by chemical mechanical polishing. The method removes polysilicon from a surface at a high removal rate while maintaining a high selectivity of polysilicon to silicon dioxide and/or a polysilicon to silicon nitride. The method is particularly suitable for use in the fabrication of MEMS devices.

Abstract: Method for polishing copper by chemical-mechanical planarization. The method of the present invention includes dissolving MoO3 in an oxidizing agent and deionized water to form a first slurry; filtering the first slurry; adding supplemental ceramic/metal oxide nano-particles to the first slurry after filtering, forming an aqueous slurry; introducing the aqueous slurry between the copper and a polishing pad; and, polishing the copper by moving the polishing pad and the copper relative to one another.

Abstract: The invention is directed to compounds of formula I: wherein Ar, r, R3, X, and R5-7 are as defined in the specification, and pharmaceutically acceptable salts thereof. The compounds of formula I have AT1 receptor antagonist activity and neprilysin inhibition activity. The invention is also directed to pharmaceutical compositions comprising such compounds; methods of using such compounds; and a process and intermediates for preparing such compounds.

Abstract: A method of removing polysilicon in preference to silicon dioxide and/or silicon nitride by chemical mechanical polishing. The method removes polysilicon from a surface at a high removal rate while maintaining a high selectivity of polysilicon to silicon dioxide and/or a polysilicon to silicon nitride. The method is particularly suitable for use in the fabrication of MEMS devices.

Abstract: Aqueous polishing slurries for chemical-mechanical polishing are effective for polishing copper at high polish rates. The aqueous slurries according to the present invention may include soluble salts of molybdenum dissolved in an oxidizing agent and molybdic acid dissolved in an oxidizing agent. Methods for polishing copper by chemical-mechanical planarization include polishing copper with low pressures using a polishing pad and a aqueous slurries including soluble salts of molybdenum dissolved in an oxidizing agent and molybdic acid dissolved in an oxidizing agent, particles of MoO3 dissolved in an oxidizing agent, and particles of MoO2 dissolved in an oxidizing agent.

Abstract: Aqueous polishing slurries for chemical-mechanical polishing are effective for polishing copper at high polish rates. The aqueous slurries according to the present invention may include soluble salts of molybdenum dissolved in an oxidizing agent and molybdic acid dissolved in an oxidizing agent. Methods for polishing copper by chemical-mechanical planarization include polishing copper with low pressures using a polishing pad and a aqueous slurries including soluble salts of molybdenum dissolved in an oxidizing agent and molybdic acid dissolved in an oxidizing agent, particles of MoO3 dissolved in an oxidizing agent, and particles of MoO2 dissolved in an oxidizing agent.

Abstract: Aqueous polishing slurries for chemical-mechanical polishing are effective for polishing copper at high polish rates. The aqueous slurries according to the present invention may include soluble salts of molybdenum dissolved in an oxidizing agent and molybdic acid dissolved in an oxidizing agent. Methods for polishing copper by chemical-mechanical planarization include polishing copper with low pressures using a polishing pad and a aqueous slurries including soluble salts of molybdenum dissolved in an oxidizing agent and molybdic acid dissolved in an oxidizing agent, particles of MoO3 dissolved in an oxidizing agent, and particles of MoO2 dissolved in an oxidizing agent.

Abstract: RNA, DNA and the building blocks forming these compounds provide significant enhancement in the selectivity of a CMP slurry for removing silicon dioxide in preference to silicon nitride during chemical-mechanical polishing in the manufacture of semiconductor wafers and chips by STI.

Abstract: RNA, DNA and the building blocks forming these compounds provide significant enhancement in the selectivity of a CMP slurry for removing silicon dioxide in preference to silicon nitride during chemical-mechanical polishing in the manufacture of semiconductor wafers and chips by STI.

Abstract: The claimed invention involves a novel aqueous polishing slurry for chemical-mechanical polishing that is effective for polishing copper at high polish rates. The aqueous slurry according to the present invention comprises particles of MoO2 in an oxidizing agent. A method for polishing copper by chemical-mechanical polishing includes contacting copper with a polishing pad and an aqueous slurry comprising particles of MoO2 in an oxidizing agent.

Abstract: The claimed invention involves a novel aqueous slurry for chemical-mechanical planarization that is effective for polishing copper at high polish rates. The aqueous slurry according to the present invention comprises particles of MoO3 dissolved in an oxidizing agent. A method for polishing copper by chemical-mechanical planarization includes contacting copper with a polishing pad and an aqueous slurry comprising particles of MoO3 dissolved in an oxidizing agent.

Abstract: Isolation of active areas, e.g., transistors, in integrated circuits and the like so that functioning of one active area does not interfere with neighboring ones, is provided by the shallow trench isolation technique followed by chemical-mechanical polishing with a mixed abrasive slurry consisting essentially of (a) relatively large, hard inorganic metal oxide particles having (b) relatively small, soft inorganic metal oxide particles adsorbed on the surface thereof so as to modify the effective charge of the slurry to provide more favorable selectivity of silicon dioxide to silicon nitride, the slurry having a pH below about 5.

Abstract: Isolation of active areas, e.g. transistors, in integrated circuits and the like so that functioning of one active area does not interfere with the neighboring ones, is provided by the shallow trench isolation technique followed by chemical-mechanical polishing with a mixed abrasive slurry consisting essentially of at least two inorganic metal oxide abrasive material particles at a pH below five, preferably on the order of 3.5 to 4.0, in order to control the polish rate selectivity of silicon dioxide to silicon nitride of the circuit and to reduce surface defects.

Abstract: An abrasive slurry for chemical-mechanical polishing, e.g. to planarize metal and silicon wafers employed in the fabrication of microelectric devices and the like, the slurry consisting essentially only of a mixture of at least two inorganic metal oxides to provide superior performance in properties such as improved oxide and metal polish rates, controlled polish rate selectivity, low surface defectivity and enhanced slurry stability over that obtainable with a single inorganic metal oxide abrasive material.