Abstract: Disclosed are various embodiments for optimizing automated data entry by recognizing invalid data items and providing alternatives. An electronic form that requests a plurality of data items is received. The data items are automatically provided to the electronic form using stored data and/or automatically generated data. It is automatically detected that a particular data item is deemed invalid for the electronic form. In various embodiments, a suggestion for providing a valid data item may be extracted from the electronic form. An alternative data item is then automatically provided to the electronic form in place of the particular data item based at least in part on the suggestion.

Abstract: Chamferless via structures and methods of manufacture are provided. The method includes: forming at least one self-aligned via within at least dielectric material; plugging the at least one self-aligned via with material; forming a protective sacrificial mask over the material which plugs the at least one self-aligned via, after a recessing process; forming at least one trench within the dielectric material, with the protective sacrificial mask protecting the material during the trench formation; removing the protective sacrificial mask and the material within the at least one self-aligned via to form a wiring via; and filling the wiring via and the at least one trench with conductive material.

Abstract: Chamferless via structures and methods of manufacture are provided. The method includes: forming at least one non-self-aligned via within at least dielectric material; plugging the at least one non-self-aligned via with material; forming a protective sacrificial mask over the material which plugs the at least one non-self-aligned via, after a recessing process; forming at least one trench within the dielectric material, with the protective sacrificial mask protecting the material during the trench formation; removing the protective sacrificial mask and the material within the at least one non-self-aligned via to form a wiring via; and filling the wiring via and the at least one trench with conductive material.

Abstract: Chamferless via structures and methods of manufacture are provided. The method includes: forming at least one non-self-aligned via within at least dielectric material; plugging the at least one non-self-aligned via with material; forming a protective sacrificial mask over the material which plugs the at least one non-self-aligned via, after a recessing process; forming at least one trench within the dielectric material, with the protective sacrificial mask protecting the material during the trench formation; removing the protective sacrificial mask and the material within the at least one non-self-aligned via to form a wiring via; and filling the wiring via and the at least one trench with conductive material.

Abstract: An electrical device including a first semiconductor device having a silicon and germanium containing source and drain region, and a second semiconductor device having a silicon containing source and drain region. A first device contact to at least one of said silicon and germanium containing source and drain region of the first semiconductor device including a metal liner of an aluminum titanium and silicon alloy and a first tungsten fill. A second device contact is in contact with at least one of the silicon containing source and drain region of the second semiconductor device including a material stack of a titanium oxide layer and a titanium layer. The second device contact may further include a second tungsten fill.

Abstract: Disclosed are various embodiments for using an audio interface device to facilitate authentication for other devices. A client device presents an authentication code via an output device of the client device. The authentication code is received from a voice interface device. The voice interface device is in an authenticated state for access to an account, and the voice interface device received the authentication code from speech captured by a microphone of the voice interface device following a spoken wake word. The client device is authenticated for access to the account in response to determining that the authentication code received from the voice interface device matches the authentication code presented by the client device.

Abstract: One illustrative method disclosed includes, among other things, forming a first dielectric layer and forming first and second conductive structures comprising cobalt embedded in the first dielectric layer. A second dielectric layer is formed above and contacting the first dielectric layer. The first and second dielectric layers comprise different materials, and a portion of the second dielectric layer comprises carbon or nitrogen. A first cap layer is formed above the first and second conductive structures and the second dielectric layer.

Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to metal insulator metal capacitor devices and methods of manufacture. The method includes: depositing a bottom plate; depositing a dielectric film over the bottom plate; exposing the dielectric film to a gas; curing the dielectric film; and depositing a top plate over the dielectric film.

Abstract: One illustrative method disclosed includes, among other things, forming a first dielectric layer and forming first and second conductive structures comprising cobalt embedded in the first dielectric layer. A second dielectric layer is formed above and contacting the first dielectric layer. The first and second dielectric layers comprise different materials, and a portion of the second dielectric layer comprises carbon or nitrogen. A first cap layer is formed above the first and second conductive structures and the second dielectric layer.

Abstract: Disclosed are various embodiments for using an audio interface device to facilitate authentication for other devices. An authentication service causes a first client device to present an authentication code via an output device of the first client device. The authentication service receives the authentication code from a second client device. The second client device is in an authenticated state for access to an account, and the second client device received the authentication code from an environmental sensor while in a listening mode. The authentication service authenticates the first client device for access to the account in response to determining that the authentication code received from the second client device matches the authentication code presented by the first client device.

Abstract: Chamferless via structures and methods of manufacture are provided. The method includes: forming at least one non-self-aligned via within at least dielectric material; plugging the at least one non-self-aligned via with material; forming a protective sacrificial mask over the material which plugs the at least one non-self-aligned via, after a recessing process; forming at least one trench within the dielectric material, with the protective sacrificial mask protecting the material during the trench formation; removing the protective sacrificial mask and the material within the at least one non-self-aligned via to form a wiring via; and filling the wiring via and the at least one trench with conductive material.

Abstract: Chamferless via structures and methods of manufacture are provided. The method includes: forming at least one non-self-aligned via within at least dielectric material; plugging the at least one non-self-aligned via with material; forming a protective sacrificial mask over the material which plugs the at least one non-self-aligned via, after a recessing process; forming at least one trench within the dielectric material, with the protective sacrificial mask protecting the material during the trench formation; removing the protective sacrificial mask and the material within the at least one non-self-aligned via to form a wiring via; and filling the wiring via and the at least one trench with conductive material.

Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to metal insulator metal capacitor devices and methods of manufacture. The method includes: depositing a bottom plate; depositing a dielectric film over the bottom plate; exposing the dielectric film to a gas; curing the dielectric film; and depositing a top plate over the dielectric film.

Abstract: Chamferless via structures and methods of manufacture are provided. The method includes: forming at least one non-self-aligned via within at least dielectric material; plugging the at least one non-self-aligned via with material; forming a protective sacrificial mask over the material which plugs the at least one non-self-aligned via, after a recessing process; forming at least one trench within the dielectric material, with the protective sacrificial mask protecting the material during the trench formation; removing the protective sacrificial mask and the material within the at least one non-self-aligned via to form a wiring via; and filling the wiring via and the at least one trench with conductive material.

Abstract: A method of forming contacts over active gates is provided. Embodiments include forming first and second gate structures over a portion of a fin; forming a first and second RSD in a portion of the fin between the first gate structures and between the first and the second gate structure, respectively; forming TS structures over the first and second RSD; forming a first cap layer over the first and second gate structures or over the TS structures; forming a metal oxide liner over the substrate, trenches formed; filling the trenches with a second cap layer; forming an ILD layer over the substrate; forming a CA through a first portion of the ILD and metal oxide layer down to the TS structures over the second RSD; and forming a CB through a second portion of the ILD and metal oxide layer down to the first gate structures.

Abstract: Structures for reliability caps used in the manufacture of a field-effect transistor and methods for forming reliability caps used in the manufacture of a field-effect transistor. A layer comprised of a metal silicon nitride is deposited on a high-k dielectric material. The high-k dielectric material is thermally processed in an oxygen-containing ambient environment with the layer arranged as a cap between the high-k dielectric material and the ambient environment. Due at least in part to its composition, the layer blocks transport of oxygen from the ambient environment to the high-k dielectric material.

Abstract: An electrical device including a first semiconductor device having a silicon and germanium containing source and drain region, and a second semiconductor device having a silicon containing source and drain region. A first device contact to at least one of said silicon and germanium containing source and drain region of the first semiconductor device including a metal liner of an aluminum titanium and silicon alloy and a first tungsten fill. A second device contact is in contact with at least one of the silicon containing source and drain region of the second semiconductor device including a material stack of a titanium oxide layer and a titanium layer. The second device contact may further include a second tungsten fill.

Abstract: An electrical device including a first semiconductor device having a silicon and germanium containing source and drain region, and a second semiconductor device having a silicon containing source and drain region. A first device contact to at least one of said silicon and germanium containing source and drain region of the first semiconductor device including a metal liner of an aluminum titanium and silicon alloy and a first tungsten fill. A second device contact is in contact with at least one of the silicon containing source and drain region of the second semiconductor device including a material stack of a titanium oxide layer and a titanium layer. The second device contact may further include a second tungsten fill.

Abstract: Structures for reliability caps used in the manufacture of a field-effect transistor and methods for forming reliability caps used in the manufacture of a field-effect transistor. A layer comprised of a metal silicon nitride is deposited on a high-k dielectric material. The high-k dielectric material is thermally processed in an oxygen-containing ambient environment with the layer arranged as a cap between the high-k dielectric material and the ambient environment. Due at least in part to its composition, the layer blocks transport of oxygen from the ambient environment to the high-k dielectric material.

Abstract: An electrical device including a first semiconductor device having a silicon and germanium containing source and drain region, and a second semiconductor device having a silicon containing source and drain region. A first device contact to at least one of said silicon and germanium containing source and drain region of the first semiconductor device including a metal liner of an aluminum titanium and silicon alloy and a first tungsten fill. A second device contact is in contact with at least one of the silicon containing source and drain region of the second semiconductor device including a material stack of a titanium oxide layer and a titanium layer. The second device contact may further include a second tungsten fill.