Abstract: An encapsulant compound apparatus, includes a mechanical operator, and an insert disposed on a surface of the mechanical operator. The insert operates to capture foreign material in the encapsulant compound.

Abstract: An encapsulant compound apparatus, includes a mechanical operator, and an insert disposed on a surface of the mechanical operator. The insert operates to capture foreign material in the encapsulant compound.

Abstract: An encapsulant compound apparatus, includes a mechanical operator, and an insert disposed on a surface of the mechanical operator. The insert operates to capture foreign material in the encapsulant compound.

Abstract: The present disclosure provides for embodiments of packaged semiconductor devices. In one embodiment, a packaged semiconductor device for a die includes an exposed structure. The die has an active surface and a backside surface opposite the active surface. A first surface of the exposed structure is joined to die attach material, and the die attach material is further joined to the backside surface of the die. The exposed structure includes a plurality of openings through the exposed structure within a perimeter of the die, and the die is exposed through the plurality of openings.

Abstract: A packaged semiconductor device is made by forming a conductive pad on an external surface of an integrated circuit device, forming a passivation layer over the conductive pad, removing a portion of the passivation layer over a bond area on the conductive pad, forming a sacrificial anode around a majority of a periphery surrounding the bond area, forming a conductive bond in the bond area, and forming an encapsulating material around the conductive bond and an exposed portion of the sacrificial anode.

Abstract: The present disclosure provides for embodiments of packaged semiconductor devices. In one embodiment, a packaged semiconductor device for a die includes an exposed structure. The die has an active surface and a backside surface opposite the active surface. A first surface of the exposed structure is joined to die attach material, and the die attach material is further joined to the backside surface of the die. The exposed structure includes a plurality of openings through the exposed structure within a perimeter of the die, and the die is exposed through the plurality of openings.

Abstract: A packaged semiconductor device is made by forming a conductive pad on an external surface of an integrated circuit device, forming a passivation layer over the conductive pad, removing a portion of the passivation layer over a bond area on the conductive pad, forming a sacrificial anode around a majority of a periphery surrounding the bond area, forming a conductive bond in the bond area, and forming an encapsulating material around the conductive bond and an exposed portion of the sacrificial anode.

Abstract: A method of forming an electronic component includes masking a lead frame to form a mask defining an exposed area, oxidizing the exposed area of the lead frame, wherein the mask inhibits oxidation of an unexposed area, and removing the mask from the lead frame following oxidizing. A lead frame can include a metal sheet patterned to define a pad region and leads. The metal sheet includes metal oxide in a select area. The pad region is substantially free of metal oxide.

Abstract: A packaged semiconductor device is made by forming a conductive pad on an external surface of an integrated circuit device, forming a passivation layer over the conductive pad, removing a portion of the passivation layer over a bond area on the conductive pad, forming a sacrificial anode around a majority of a periphery surrounding the bond area, forming a conductive bond in the bond area, and forming an encapsulating material around the conductive bond and an exposed portion of the sacrificial anode.

Abstract: The present disclosure provides for embodiments of packaged semiconductor devices. In one embodiment, a packaged semiconductor device for a die includes an exposed structure. The die has an active surface and a backside surface opposite the active surface. A first surface of the exposed structure is joined to die attach material, and the die attach material is further joined to the backside surface of the die. The exposed structure includes a plurality of openings through the exposed structure within a perimeter of the die, and the die is exposed through the plurality of openings.

Abstract: A method includes forming a packaged integrated circuit that includes forming a lead frame by separating an outer portion of the metal structure into a plurality of leads by stamping. The plurality of leads have sides with a first concavity. The lead frame is further formed by performing an etch on the sides of the plurality of leads to achieve a second concavity on the sides of leads. The second concavity is greater than the first concavity. A semiconductor die is attached to a center portion of the metal structure. Electrical attachments are made between the die and the leads.

Abstract: A mold compound is provided for encapsulating a semiconductor device (101). The mold compound comprises at least approximately 70% by weight silica fillers, at least approximately 10% by weight epoxy resin system, and beneficial ions that are beneficial with respect to copper ball bond corrosion. A total level of the beneficial ions in the mold compound is at least approximately 100 ppm.

Abstract: A technique for testing the compatibility of an encapsulation material and a wire bond included at an unencapsulated assembly. The technique includes immersing the assembly in an encapsulating compound extract. The assembly includes a semiconductor die and a bonding wire affixed to a metalized pad of the semiconductor die by the wire bond. After the immersing, a mechanical strength of the wire bond is determined.

Abstract: A method of forming an electronic component includes masking a lead frame to form a mask defining an exposed area, oxidizing the exposed area of the lead frame, wherein the mask inhibits oxidation of an unexposed area, and removing the mask from the lead frame following oxidizing. A lead frame can include a metal sheet patterned to define a pad region and leads. The metal sheet includes metal oxide in a select area. The pad region is substantially free of metal oxide.

Abstract: A packaged semiconductor device is made by forming a conductive pad on an external surface of an integrated circuit device, forming a passivation layer over the conductive pad, removing a portion of the passivation layer over a bond area on the conductive pad, forming a sacrificial anode around a majority of a periphery surrounding the bond area, forming a conductive bond in the bond area, and forming an encapsulating material around the conductive bond and an exposed portion of the sacrificial anode.

Abstract: A mold compound is provided for encapsulating a semiconductor device (101). The mold compound comprises at least approximately 70% by weight silica fillers, at least approximately 10% by weight epoxy resin system, and beneficial ions that are beneficial with respect to copper ball bond corrosion. A total level of the beneficial ions in the mold compound is at least approximately 100 ppm.

Abstract: A method includes forming a packaged integrated circuit that includes forming a lead frame by separating an outer portion of the metal structure into a plurality of leads by stamping. The plurality of leads have sides with a first concavity. The lead frame is further formed by performing an etch on the sides of the plurality of leads to achieve a second concavity on the sides of leads. The second concavity is greater than the first concavity. A semiconductor die is attached to a center portion of the metal structure. Electrical attachments are made between the die and the leads.

Abstract: A packaged semiconductor device includes a package substrate, an integrated circuit (IC) die mounted on the package substrate, and a heat spreader mounted on the package substrate. The heat spreader surrounds at least a portion of the IC die and includes a lid with a plurality of openings. An inner portion of the heat spreader includes a plurality of thermally conductive protrusions adjacent the die.

Abstract: A mold compound is provided for encapsulating a semiconductor device (101). The mold compound comprises at least approximately 70% by weight silica fillers, at least approximately 10% by weight epoxy resin system, and beneficial ions that are beneficial with respect to copper ball bond corrosion. A total level of the beneficial ions in the mold compound is at least approximately 100 ppm.

Abstract: A packaged semiconductor device, comprising a package substrate, an integrated circuit (IC) die mounted on the package substrate, and a heat spreader mounted on the package substrate. The heat spreader surrounds at least a portion of the IC die and includes a lid with a plurality of openings. An inner portion of the heat spreader includes a plurality of thermally conductive protrusions adjacent the die.