Patents by Inventor Sheila Hurtt
Sheila Hurtt has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240120446Abstract: The disclosure describes various aspects of using optical elements monolithically integrated with light-emitting diode (LED) structures. In an aspect, a light emitting device includes a single LED structure having an active region and a single optical element disposed on the LED structure and configured to collimate and steer light emitted by the LED structure. One or more additional optical elements may also be disposed on the LED structure. In another aspect, a light emitting device may include multiple LED structures and a single optical element disposed on the multiple LED structures and configured to collimate and steer light emitted by the multiple LED structures. For each of these aspects, the LED structure(s) and the optical element(s) are made of a material that includes GaN, the LED structure(s) has a corresponding active region, and the LED structure(s) has a corresponding reflective contact disposed opposite to the optical element(s).Type: ApplicationFiled: October 6, 2023Publication date: April 11, 2024Inventors: Benjamin Leung, Miao-Chan Tsai, Sheila Hurtt, Gang He, Richard Peter Schneider, JR.
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Patent number: 11784288Abstract: The disclosure describes various aspects of using optical elements monolithically integrated with light-emitting diode (LED) structures. In an aspect, a light emitting device includes a single LED structure having an active region and a single optical element disposed on the LED structure and configured to collimate and steer light emitted by the LED structure. One or more additional optical elements may also be disposed on the LED structure. In another aspect, a light emitting device may include multiple LED structures and a single optical element disposed on the multiple LED structures and configured to collimate and steer light emitted by the multiple LED structures. For each of these aspects, the LED structure(s) and the optical element(s) are made of a material that includes GaN, the LED structure(s) has a corresponding active region, and the LED structure(s) has a corresponding reflective contact disposed opposite to the optical element(s).Type: GrantFiled: October 23, 2019Date of Patent: October 10, 2023Assignee: Google LLCInventors: Benjamin Leung, Miao-Chan Tsai, Sheila Hurtt, Gang He, Richard Peter Schneider, Jr.
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Patent number: 11637219Abstract: The disclosure describes various aspects of monolithic integration of different light emitting structures on a same substrate. In an aspect, a device for light generation is described having a substrate with one or more buffer layers made a material that includes GaN. The device also includes light emitting structures, which are epitaxially grown on a same surface of a top buffer layer of the substrate, where each light emitting structure has an active area parallel to the surface and laterally terminated, and where the active area of different light emitting structures is configured to directly generate a different color of light. The device also includes a p-doped layer disposed over the active area of each light emitting structure and made of a p-doped material that includes GaN. The device may be part of a light field display and may be connected to a backplane of the light field display.Type: GrantFiled: April 6, 2020Date of Patent: April 25, 2023Assignee: GOOGLE LLCInventors: Gang He, Sheila Hurtt
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Publication number: 20210343897Abstract: A light-emitting diode (LED) structure includes an active region that has at least one aluminum-containing quantum well (QW) stack that emits light from the LED structure when activated. The LED structure exhibits a modified internal quantum efficiency value, which is higher than a LED structure that does not include aluminum within a QW stack. The LED structure also exhibits a modified peak wavelength, which is longer than an unmodified peak wavelength of the unmodified LED structure.Type: ApplicationFiled: May 4, 2021Publication date: November 4, 2021Inventors: Ying-Lan CHANG, Benjamin LEUNG, Miao-Chan TSAI, Richard Peter SCHNEIDER, Sheila HURTT, Gang HE
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Publication number: 20200328327Abstract: The disclosure describes various aspects of monolithic integration of different light emitting structures on a same substrate. In an aspect, a device for light generation is described having a substrate with one or more buffer layers made a material that includes GaN. The device also includes light emitting structures, which are epitaxially grown on a same surface of a top buffer layer of the substrate, where each light emitting structure has an active area parallel to the surface and laterally terminated, and where the active area of different light emitting structures is configured to directly generate a different color of light. The device also includes a p-doped layer disposed over the active area of each light emitting structure and made of a p-doped material that includes GaN. The device may be part of a light field display and may be connected to a backplane of the light field display.Type: ApplicationFiled: April 6, 2020Publication date: October 15, 2020Inventors: Gang HE, Sheila HURTT
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Publication number: 20200135977Abstract: The disclosure describes various aspects of using optical elements monolithically integrated with light-emitting diode (LED) structures. In an aspect, a light emitting device includes a single LED structure having an active region and a single optical element disposed on the LED structure and configured to collimate and steer light emitted by the LED structure. One or more additional optical elements may also be disposed on the LED structure. In another aspect, a light emitting device may include multiple LED structures and a single optical element disposed on the multiple LED structures and configured to collimate and steer light emitted by the multiple LED structures. For each of these aspects, the LED structure(s) and the optical element(s) are made of a material that includes GaN, the LED structure(s) has a corresponding active region, and the LED structure(s) has a corresponding reflective contact disposed opposite to the optical element(s).Type: ApplicationFiled: October 23, 2019Publication date: April 30, 2020Inventors: Benjamin LEUNG, Miao-Chan TSAI, Sheila HURTT, Gang HE, Richard Peter SCHNEIDER, JR.
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Publication number: 20080044128Abstract: A photonic integrated circuit (PIC) chip comprising an array of modulated sources, each providing a modulated signal output at a channel wavelength different from the channel wavelength of other modulated sources and a wavelength selective combiner having an input optically coupled to received all the signal outputs from the modulated sources and provide a combined output signal on an output waveguide from the chip. The modulated sources, combiner and output waveguide are all integrated on the same chip.Type: ApplicationFiled: June 19, 2007Publication date: February 21, 2008Applicant: INFINERA CORPORATIONInventors: Fred Kish, David Welch, Mark Missey, Radhakrishnan Nagarajan, Atul Mathur, Frank Peters, Richard Schneider, Charles Joyner, Andrew Dentai, Damien Lambert, Masaki Kato, Sheila Hurtt, Randal Salvatore, Mehrdad Ziari, Vincent Dominic
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Patent number: 7208770Abstract: In photonic integrated circuits (PICs) having at least one active semiconductor device, such as, a buried heterostructure semiconductor laser, LED, modulator, photodiode, heterojunction bipolar transistor, field effect transistor or other active device, a plurality of semiconductor layers are formed on a substrate with one of the layers being an active region. A current channel is formed through this active region defined by current blocking layers formed on adjacent sides of a designated active region channel where the blocking layers substantially confine the current through the channel. The blocking layers are characterized by being an aluminum-containing Group III-V compound, i.e., an Al-III-V layer, intentionally doped with oxygen from an oxide source. Also, wet oxide process or a deposited oxide source may be used to laterally form a native oxide of the Al-III-V layer.Type: GrantFiled: February 16, 2005Date of Patent: April 24, 2007Assignee: Infinera CorporationInventors: Fred A. Kish, Jr., Sheila Hurtt, Charles H. Joyner, Richard P. Schneider
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Patent number: 7122846Abstract: In photonic integrated circuits (PICs) having at least one active semiconductor device, such as, a buried heterostructure semiconductor laser, LED, modulator, photodiode, heterojunction bipolar transistor, field effect transistor or other active device, a plurality of semiconductor layers are formed on a substrate with one of the layers being an active region. A current channel is formed through this active region defined by current blocking layers formed on adjacent sides of a designated active region channel where the blocking layers substantially confine the current through the channel. The blocking layers are characterized by being an aluminum-containing Group III-V compound, i.e., an Al-III-V layer, intentionally doped with oxygen from an oxide source. Also, wet oxide process or a deposited oxide source may be used to laterally form a native oxide of the Al-III-V layer.Type: GrantFiled: February 16, 2005Date of Patent: October 17, 2006Assignee: Infinera CorporationInventors: Fred A. Kish, Jr., Sheila Hurtt, Charles H. Joyner, Richard P. Schneider
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Publication number: 20050151144Abstract: In photonic integrated circuits (PICs) having at least one active semiconductor device, such as, a buried heterostructure semiconductor laser, LED, modulator, photodiode, heterojunction bipolar transistor, field effect transistor or other active device, a plurality of semiconductor layers are formed on a substrate with one of the layers being an active region. A current channel is formed through this active region defined by current blocking layers formed on adjacent sides of a designated active region channel where the blocking layers substantially confine the current through the channel. The blocking layers are characterized by being an aluminum-containing Group Ill-V compound, i.e., an Al-III-V layer, intentionally doped with oxygen from an oxide source. Also, wet oxide process or a deposited oxide source may be used to laterally form a native oxide of the Al-III-V layer.Type: ApplicationFiled: February 16, 2005Publication date: July 14, 2005Applicant: Infinera CorporationInventors: Fred Kish, Sheila Hurtt, Charles Joyner, Richard Schneider
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Publication number: 20050145863Abstract: In photonic integrated circuits (PICs) having at least one active semiconductor device, such as, a buried heterostructure semiconductor laser, LED, modulator, photodiode, heterojunction bipolar transistor, field effect transistor or other active device, a plurality of semiconductor layers are formed on a substrate with one of the layers being an active region. A current channel is formed through this active region defined by current blocking layers formed on adjacent sides of a designated active region channel where the blocking layers substantially confine the current through the channel. The blocking layers are characterized by being an aluminum-containing Group III-V compound, i.e., an Al-III-V layer, intentionally doped with oxygen from an oxide source. Also, wet oxide process or a deposited oxide source may be used to laterally form a native oxide of the Al-III-V layer.Type: ApplicationFiled: February 16, 2005Publication date: July 7, 2005Applicant: Infinera CorporationInventors: Fred Kish, Sheila Hurtt, Charles Joyner, Richard Schneider