Abstract: Disclosed is a method relating to graded-composition barrier coatings comprising first and second materials in first and second zones. The compositions of one or both zones vary substantially continuously across a thickness of the zone in order to achieve improved properties such as barrier, flexibility, adhesion, optics, thickness, and tact time. The graded-composition barrier coatings find utility in preventing exposure of devices such as organic electro-luminescent devices (OLEDs) to reactive species found in the environment.

Abstract: A method of forming a buried oxide/crystalline III-V semiconductor dielectric stack is presented. The method includes providing a substrate and forming a layered structure on the substrate comprising of layers of different materials, one of the different materials is selected to be an oxidizable material to form one or more buried low index oxide layers. A first sequence of oxidizing steps are performed on the layered structure by exposing the edges of the layered structure to a succession of temperature increases in the presence of steam from an initial temperature to the desired oxidation temperature for a time interval equal to the sum of the time intervals of the succession of temperature increases. Also, the method includes performing a second sequential oxidizing step with steam on the layered structure at the specific oxidation temperature for a specific time interval.

Abstract: Methods and apparatus are disclosed relating to graded-composition barrier coatings comprising first and second materials in first and second zones. The compositions of one or both zones vary substantially continuously across a thickness of the zone in order to achieve improved properties such as barrier, flexibility, adhesion, optics, thickness and tact time. The graded-composition barrier coatings find utility in preventing exposure of devices such as organic electro-luminescent devices (OLEDs) to reactive species found in the environment.

Abstract: Methods and apparatus are disclosed relating to graded-composition barrier coatings comprising first and second materials in first and second zones. The compositions of one or both zones vary substantially continuously across a thickness of the zone in order to achieve improved properties such as barrier, flexibility, adhesion, optics, thickness and tact time. The graded-composition barrier coatings find utility in preventing exposure of devices such as organic electro-luminescent devices (OLEDs) to reactive species found in the environment.

Abstract: A photonic crystal based collection probe is provided. The probe includes a photonic crystal configured to guide and condition a beam of Raman scattered photons. Further, the device includes a spectrograph in optical communication with the photonic crystal and configured to receive Raman scattering from the photonic crystal. The device may be employed in a Raman spectrometer system.

Abstract: A method of forming a buried oxide/crystalline III-V semiconductor dielectric stack is presented. The method includes providing a substrate and forming a layered structure on the substrate comprising of layers of different materials, one of the different materials is selected to be an oxidizable material to form one or more buried low index oxide layers. A first sequence of oxidizing steps are performed on the layered structure by exposing the edges of the layered structure to a succession of temperature increases in the presence of steam from an initial temperature to the desired oxidation temperature for a time interval equal to the sum of the time intervals of the succession of temperature increases. Also, the method includes performing a second sequential oxidizing step with steam on the layered structure at the specific oxidation temperature for a specific time interval.