Patents by Inventor Shelley Scott

Shelley Scott has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10715939
    Abstract: A transducer supported by the eardrum provides a piezoelectric material exchanging energy with the eardrum through a nanoscale membrane, the latter serving to boost the coupling between the piezoelectric material and the eardrum.
    Type: Grant
    Filed: September 13, 2018
    Date of Patent: July 14, 2020
    Assignees: Wisconsin Alumni Research Foundation, University of Hamburg
    Inventors: Max Lagally, Abhishek Bhat, Frank Flack, Shelley Scott, Robert H. Blick
  • Publication number: 20200092666
    Abstract: A transducer supported by the eardrum provides a piezoelectric material exchanging energy with the eardrum through a nanoscale membrane, the latter serving to boost the coupling between the piezoelectric material and the eardrum
    Type: Application
    Filed: September 13, 2018
    Publication date: March 19, 2020
    Inventors: Max Lagally, Abhishek Bhat, Frank Flack, Shelley Scott, Robert H. Blick
  • Publication number: 20190013200
    Abstract: High-quality, single-crystalline silicon-germanium (Si(1-x)Gex) having a high germanium content is provided. Layers of the high-quality, single-crystalline silicon-germanium can be grown to high sub-critical thicknesses and then released from their growth substrates to provide Si(1-x)Gex films without lattice mismatch-induced misfit dislocations or a mosaic distribution of crystallographic orientations.
    Type: Application
    Filed: July 6, 2017
    Publication date: January 10, 2019
    Inventors: Max G. Lagally, Thomas Francis Kuech, Yingxin Guan, Shelley A. Scott, Abhishek Bhat, Xiaorui Cui
  • Patent number: 10176991
    Abstract: High-quality, single-crystalline silicon-germanium (Si(1-x)Gex) having a high germanium content is provided. Layers of the high-quality, single-crystalline silicon-germanium can be grown to high sub-critical thicknesses and then released from their growth substrates to provide Si(1-x)Gex films without lattice mismatch-induced misfit dislocations or a mosaic distribution of crystallographic orientations.
    Type: Grant
    Filed: July 6, 2017
    Date of Patent: January 8, 2019
    Assignee: WISCONSIN ALUMNI RESEARCH FOUNDATION
    Inventors: Max G. Lagally, Thomas Francis Kuech, Yingxin Guan, Shelley A. Scott, Abhishek Bhat, Xiaorui Cui
  • Patent number: 8803195
    Abstract: The present nanomembrane structures include a multilayer film comprising a single-crystalline layer of semiconductor material disposed between two other single-crystalline layers of semiconductor material. A plurality of holes extending through the nanomembrane are at least partially, and preferably entirely, filled with a filler material which is also a semiconductor, but which differs from the nanomembrane semiconductor materials in composition, crystal orientation, or both.
    Type: Grant
    Filed: March 10, 2008
    Date of Patent: August 12, 2014
    Assignee: Wisconsin Alumni Research Foundation
    Inventors: Max G. Lagally, Shelley A. Scott, Donald E. Savage
  • Publication number: 20090032842
    Abstract: The present nanomembrane structures include a multilayer film comprising a single-crystalline layer of semiconductor material disposed between two other single-crystalline layers of semiconductor material. A plurality of holes extending through the nanomembrane are at least partially, and preferably entirely, filled with a filler material which is also a semiconductor, but which differs from the nanomembrane semiconductor materials in composition, crystal orientation, or both.
    Type: Application
    Filed: March 10, 2008
    Publication date: February 5, 2009
    Inventors: Max G. Lagally, Shelley A. Scott, Donald E. Savage