Patents by Inventor Sheng-Chao Chuang

Sheng-Chao Chuang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Chemical Mechanical Planarization Tool
    Publication number: 20230271298
    Abstract: A chemical mechanical planarization (CMP) tool includes a platen and a polishing pad attached to the platen, where a first surface of the polishing pad facing away from the platen includes a first polishing zone and a second polishing zone, where the first polishing zone is a circular region at a center of the first surface of the polishing pad, and the second polishing zone is an annular region around the first polishing zone, where the first polishing zone and the second polishing zone have different surface properties.
    Type: Application
    Filed: May 5, 2023
    Publication date: August 31, 2023
    Inventors: Michael Yen, Kao-Feng Liao, Hsin-Ying Ho, Chun-Wen Hsiao, Sheng-Chao Chuang, Ting-Hsun Chang, Fu-Ming Huang, Chun-Chieh Lin, Peng-Chung Jangjian, Ji James Cui, Liang-Guang Chen, Chih Hung Chen, Kei-Wei Chen
  • Chemical mechanical planarization tool
    Patent number: 11679469
    Abstract: A chemical mechanical planarization (CMP) tool includes a platen and a polishing pad attached to the platen, where a first surface of the polishing pad facing away from the platen includes a first polishing zone and a second polishing zone, where the first polishing zone is a circular region at a center of the first surface of the polishing pad, and the second polishing zone is an annular region around the first polishing zone, where the first polishing zone and the second polishing zone have different surface properties.
    Type: Grant
    Filed: August 23, 2019
    Date of Patent: June 20, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Michael Yen, Kao-Feng Liao, Hsin-Ying Ho, Chun-Wen Hsiao, Sheng-Chao Chuang, Ting-Hsun Chang, Fu-Ming Huang, Chun-Chieh Lin, Peng-Chung Jangjian, Ji James Cui, Liang-Guang Chen, Chih Hung Chen, Kei-Wei Chen
  • FinFET contacts and method forming same
    Patent number: 11189727
    Abstract: A device includes a semiconductor fin protruding from a substrate, a first gate stack over the semiconductor fin and a second gate stack over the semiconductor fin, a first source/drain region in the semiconductor fin adjacent the first gate stack and a second source/drain region in the semiconductor fin adjacent the second gate stack, a first layer of a first dielectric material on the first gate stack and a second layer of the first dielectric material on the second gate stack, a first source/drain contact on the first source/drain region and adjacent the first gate stack, a first layer of a second dielectric material on a top surface of the first source/drain contact, and a second source/drain contact on the second source/drain region and adjacent the second gate stack, wherein the top surface of the second source/drain contact is free of the second dielectric material.
    Type: Grant
    Filed: August 23, 2019
    Date of Patent: November 30, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Peng-Chung Jangjian, Kao-Feng Liao, Chun-Wen Hsiao, Hsin-Ying Ho, Sheng-Chao Chuang
  • CHEMICAL MECHANICAL PLANARIZATION TOOL
    Publication number: 20210053180
    Abstract: A chemical mechanical planarization (CMP) tool includes a platen and a polishing pad attached to the platen, where a first surface of the polishing pad facing away from the platen includes a first polishing zone and a second polishing zone, where the first polishing zone is a circular region at a center of the first surface of the polishing pad, and the second polishing zone is an annular region around the first polishing zone, where the first polishing zone and the second polishing zone have different surface properties.
    Type: Application
    Filed: August 23, 2019
    Publication date: February 25, 2021
    Inventors: Michael Yen, Kao-Feng Liao, Hsin-Ying Ho, Chun-Wen Hsiao, Sheng-Chao Chuang, Ting-Hsun Chang, Fu-Ming Huang, Chun-Chieh Lin, Peng-Chung Jangjian, Ji James Cui, Liang-Guang Chen, Chih Hung Chen, Kei-Wei Chen
  • FINFET CONTACTS AND METHOD FORMING SAME
    Publication number: 20210057571
    Abstract: A device includes a semiconductor fin protruding from a substrate, a first gate stack over the semiconductor fin and a second gate stack over the semiconductor fin, a first source/drain region in the semiconductor fin adjacent the first gate stack and a second source/drain region in the semiconductor fin adjacent the second gate stack, a first layer of a first dielectric material on the first gate stack and a second layer of the first dielectric material on the second gate stack, a first source/drain contact on the first source/drain region and adjacent the first gate stack, a first layer of a second dielectric material on a top surface of the first source/drain contact, and a second source/drain contact on the second source/drain region and adjacent the second gate stack, wherein the top surface of the second source/drain contact is free of the second dielectric material.
    Type: Application
    Filed: August 23, 2019
    Publication date: February 25, 2021
    Inventors: Peng-Chung Jangjian, Kao-Feng Liao, Chun-Wen Hsiao, Hsin-Ying Ho, Sheng-Chao Chuang