Abstract: The compounds represented by Formula (I), which are peripheral alkyl and alkenyl chains extended benzene derivatives, are useful as dual autotaxin (ATX)/histone deacetylase (HD AC) inhibitors. These compounds may be included in a pharmaceutical composition along with a pharmaceutically acceptable carrier, and be used in a therapeutically effective amount for prophylaxis or treatment of various diseases and disorders.

Abstract: Disclosed is an electronic device including a driving unit, a plurality of sub-pixel circuits and a plurality of control signal lines. Each of the plurality of sub-pixel circuits includes a first switching element and at least one light emitting element, and the sub-pixel circuits are electrically connected to the driving unit in parallel. The control signal lines are electrically connected to the sub-pixel circuits respectively.

Abstract: A semiconductor device and a method for manufacturing the semiconductor device are provided. The semiconductor device comprises a first electrical conductor, a second electrical conductor, a third electrical conductor, a plurality of metal features and a plurality of active regions. The first electrical conductor extends along a first direction and is electrically coupled to a first voltage. The second electrical conductor extends along the first direction and is electrically coupled to a second voltage. The second voltage is lower than the first voltage. The third electrical conductor extending along the first direction is electrically coupled to a third voltage and disposed between the first electrical conductor and the second electrical conductor. The metal features extend along a second direction perpendicular to the first direction and are formed above the first electrical conductor, the second electrical conductor and the third electrical conductor.

Abstract: A multiple cation-doped perovskite compound includes a perovskite represented by a formula of ABX3. A includes M1, M2, and M3. M1 represents a cation different from M2 and M3; M2 represents a cesium ion and M3 represents a formamidinium ion. B represents a divalent cation different from M1, M2, and M3. X includes at least two different halide ions. In addition, the perovskite compound is free from methylamine ion. A perovskite solar cell including the multiple cation-doped perovskite compound is also provided.

Abstract: An electronic device includes a substrate, a load element, a power supply circuit, and a compensation circuit. The substrate includes an active area and a peripheral area. The peripheral area is adjacent to the active area. The load element is disposed on the substrate and disposed in the active area. The power supply circuit is disposed on the substrate and disposed in the active area. The power supply circuit is electrically connected to the load element. The compensation circuit is disposed on the substrate and disposed in the peripheral area. The compensation circuit compensates the power supply circuit and/or the load element.

Abstract: A method for monitoring a transport vehicle is provided. The method includes the operations as follows. A transport vehicle is scanned by a monitor during the transport vehicle is operated on a rail to acquire a vehicle pattern of the transport vehicle. The vehicle pattern of the transport vehicle is analyzed. An abnormal transport vehicle is determined based on the vehicle pattern. The monitor is placed nearby the rail. A method for transport vehicle maintenance is also provided.

Abstract: A circuit includes a first transistor, a second transistor, a third transistor and a fourth transistor. The first transistor has a first end and a second end. The second transistor has a first end and a second end, wherein the first end of the second transistor is coupled to the first end of the first transistor. The third transistor has a first end and a second end, wherein the second end of the third transistor is coupled to the second end of the second transistor. The fourth transistor has a first end coupled to the second end of the first transistor. The fourth transistor has a bottom gate and an oxide semiconductor layer, and the second transistor has a top gate and a silicon semiconductor layer.

Abstract: A circuit includes a first transistor, a second transistor, a third transistor and a fourth transistor. The first transistor has a first end and a second end. The second transistor has a first end and a second end, wherein the first end of the second transistor is coupled to the first end of the first transistor. The third transistor has a first end and a second end, wherein the second end of the third transistor is coupled to the second end of the second transistor. The fourth transistor has a first end coupled to the second end of the first transistor. The fourth transistor has a bottom gate and an oxide semiconductor layer, and the second transistor has a top gate and a silicon semiconductor layer.

Abstract: A driver circuit which includes an output circuit and a control circuit coupled to the output circuit. The driver circuit includes a pull-up transistor with a silicon semiconductor layer. The control circuit includes a first transistor with an oxide semiconductor layer.

Abstract: Provided are a semiconductor device and a method of forming the same. The semiconductor device includes: at least one gate structure having a first side and a second side opposite to each other; a first source/drain (S/D) feature disposed at the first side of the at least one gate structure; a second S/D feature disposed at the second side of the at least one gate structure; a first metal-to-drain/source (MD) contact disposed on the first S/D feature; and a second MD contact disposed on the second S/D feature, wherein a contact area between the first MD contact and the first S/D feature is greater than a contact area between the second MD contact and the second S/D feature.

Abstract: An electronic device includes a substrate, a first transistor, a second transistor and a conductor. The first transistor is disposed on the substrate and comprises an oxide semiconductor layer. The second transistor is disposed on the substrate and comprises a silicon semiconductor layer. The conductor is electrically connected to the oxide semiconductor layer and the silicon semiconductor layer.

Abstract: An electronic device is provided. The electronic device includes a first unit and a second unit. The first unit includes a first driving circuit and a first inverter. The second unit is adjacent to the first unit. The second unit includes a second driving circuit. The first inverter is electrically connected to the first driving circuit and the second driving circuit.

Abstract: An electronic device includes a substrate, a load element, a power supply circuit, and a compensation circuit. The substrate includes an active area and a peripheral area. The peripheral area is adjacent to the active area. The load element is disposed on the substrate and disposed in the active area. The power supply circuit is disposed on the substrate and disposed in the active area. The power supply circuit is electrically connected to the load element. The compensation circuit is disposed on the substrate and disposed in the peripheral area. The compensation circuit compensates the power supply circuit and/or the load element.

Abstract: A display device includes a gate driving circuit and a driving circuit. The gate driving circuit outputs a clock signal. The driving circuit receives the clock signal for driving a display unit and comprises two transistors. Wherein one of the two transistors is an oxide transistor and the other one of the two transistors is a silicon transistor.

Abstract: A semiconductor device includes a first cell in a first row, wherein the first row extends in a first direction, the first cell having a first cell height measured in a second direction perpendicular to the first direction. The semiconductor device further includes a second cell in the first row, wherein the second cell has a second cell height measured in the second direction, the second cell height is less than the first cell height. The second cell includes a first active region having a first width measured in the second direction, and a second active region having a second width measured in the second direction, wherein the second width is different from the first width.

Abstract: The disclosure provides an electronic device. The electronic device includes a pixel array and a first driving circuit. The pixel array is disposed on a substrate and includes a plurality of sub-pixel rows. The first driving circuit is disposed on the substrate and located on one side of the pixel array. The first driving circuit includes a plurality of demultiplexer circuits and a plurality of switching circuits. The demultiplexer circuits include a first demultiplexer circuit. The switching circuits include a first switching circuit. The first switching circuit is coupled to the first demultiplexer circuit, and the first demultiplexer circuit is coupled to at least three of the plurality of sub-pixel rows.

Abstract: A display device includes a gate driving circuit and a driving circuit. The gate driving circuit outputs a clock signal. The driving circuit receives the clock signal for driving a display unit and comprises two transistors. Wherein one of the two transistors is an oxide transistor and the other one of the two transistors is a silicon transistor.

Abstract: A gate driving circuit includes a shift unit and a switch unit. The shift unit receives a start input signal, a first clock input signal and a second clock input signal to generate an enable output signal. The switch unit is connected to the shift unit and receiving the enable output signal. The switch unit outputs a third clock signal based on the enable output signal.

Abstract: A driver circuit which includes an output circuit and a control circuit coupled to the output circuit. The driver circuit includes a pull-up transistor with a silicon semiconductor layer. The control circuit includes a first transistor with an oxide semiconductor layer.

Abstract: The disclosure provides an electronic device. The electronic device includes a pixel array and a first driving circuit. The pixel array is disposed on a substrate and includes a plurality of sub-pixel rows. The first driving circuit is disposed on the substrate and located on one side of the pixel array. The first driving circuit includes a plurality of demultiplexer circuits and a plurality of switching circuits. The demultiplexer circuits include a first demultiplexer circuit. The switching circuits include a first switching circuit. The first switching circuit is coupled to the first demultiplexer circuit, and the first demultiplexer circuit is coupled to at least three of the plurality of sub-pixel rows.