Abstract: A stacked integrated circuit (IC) device and a method are disclosed. The stacked IC device includes a first semiconductor element. The first substrate includes a dielectric block in the first substrate; and a plurality of first conductive features formed in first inter-metal dielectric layers over the first substrate. The stacked IC device also includes a second semiconductor element bonded on the first semiconductor element. The second semiconductor element includes a second substrate and a plurality of second conductive features formed in second inter-metal dielectric layers over the second substrate. The stacked IC device also includes a conductive deep-interconnection-plug coupled between the first conductive features and the second conductive features. The conductive deep-interconnection-plug is isolated by dielectric block, the first inter-metal-dielectric layers and the second inter-metal-dielectric layers.

Abstract: A photovoltaic cell device and a manufacturing method of a template thereof are provided. The manufacturing method of the template of the photovoltaic cell device includes the steps of providing a substrate and a target disposed opposite to each other in a chamber, applying an unbalanced magnetic field, and generating a plasma in the chamber to form a sputtered layer on the substrate. The plasma extends to an area proximate to the substrate due to the unbalanced magnetic field to assist the crystallization of the sputtered layer, so that the sputtered layer has a single crystalline or a single crystalline-like structure.

Abstract: An infrared anti-reflection film structure, an anti-reflection film layer, including a material of zinc oxide, comprising a top anti-reflection film layer and a bottom anti-reflection film layer, wherein the top anti-reflection film layer is disposed on a top side of the base material and the bottom anti-reflection film layer is disposed on a bottom side of the base material; and the base material is manufactured by a floating zone crystal growth method. Through the silicon base material manufactured by the high purity crystal growth method, the silicon base material replaces germanium as the high refractive index material and base material. And coating the anti-reflection film layer on the surface of the silicon base material, so as to apply the infrared anti-reflection film structure to the thermal imaging technology.

Abstract: An infrared anti-reflection film structure, an anti-reflection film layer, including a material of zinc oxide, comprising a top anti-reflection film layer and a bottom anti-reflection film layer, wherein the top anti-reflection film layer is disposed on a top side of the base material and the bottom anti-reflection film layer is disposed on a bottom side of the base material; and the base material is manufactured by a floating zone crystal growth method. Through the silicon base material manufactured by the high purity crystal growth method, the silicon base material replaces germanium as the high refractive index material and base material. And coating the anti-reflection film layer on the surface of the silicon base material, so as to apply the infrared anti-reflection film structure to the thermal imaging technology.

Abstract: The present invention discloses a flexible micro-LED display module, comprising: a flexible substrate, a substrate protection layer, a lattice matching layer, an LED array, a transparent conductive substrate, and a light conversion layer. The light conversion layer is constituted by a plurality of red light conversion units, a plurality of green light conversion units, and a plurality of blue light conversion units, such that one pixel is formed by one red light conversion unit, one green light conversion unit, one blue light conversion unit, and several light-emitting elements. In the case of some light-emitting elements failing to radiate light normally, the defective pixel correction circuit is used to apply luminous intensity adjusting process to other light-emitting elements working normally, so as to make the flexible micro-LED display module able to display video or images with the lowest number of defective pixels capable of meeting the requirements of pixel standards.

Abstract: The present invention discloses a flexible LED device and a flexible LED panel. Differing an approach for substrate lift-off and bonding is conventionally adopted to exchange a sapphire substrate of an LED die for a copper substrate having excellent thermal conductivity, this novel flexible LED device is constituted by a thin-metal-made substrate, a substrate protection layer, a lattice matching layer, a light-emitting structure, a first electrode, and a second electrode. It is worth explaining that, thanks to that the thin-metal-made substrate with a thickness in a range from 25 ?m to 150 ?m exhibits outstanding mechanical characteristics including flexibility, thermal conductivity and thermal resistance, engineers can adopt thin film deposition technologies such as PECVD and MOCVD as well as utilize roll-to-roll manufacturing systems to mass produce this flexible LED device.

Abstract: A manufacturing method of a substrate of a photoelectric conversion device includes the following steps. A single crystal silicon wafer is set into a chamber of a machine, wherein a germanium target or a silicon germanium target is disposed in the chamber. Thereafter, a physical vapor deposition process is performed to form a single crystal germanium thin film or a single crystal silicon germanium thin film on the single crystal silicon wafer. The manufacturing method reduces the production cost of substrates of photoelectric conversion devices. Furthermore, another substrate of a photoelectric conversion device is also provided.

Abstract: A method of epitaxial growth of a germanium film on a silicon substrate includes the steps of: providing a silicon substrate, placing the silicon substrate in a vacuum chamber, heating the silicon substrate to a temperature that is lower than 300° C., and forming a monocrystalline germanium film on the silicon substrate in the vacuum chamber, by employing an electron cyclotron resonance chemical vapor deposition (ECR-CVD) approach, wherein the step of forming a monocrystalline germanium film on the silicon substrate in the vacuum chamber further includes dissociating a reaction gas introduced into the vacuum chamber in utilization of a microwave source, such that the monocrystalline germanium film is deposited on the silicon substrate, and wherein the reaction gas includes at least germane (GeH4) and hydrogen gas (H2).

Abstract: A semiconductor manufacturing method includes providing a carrier having a metallic layer, wherein the metallic layer comprises a plurality of base areas and a plurality of outer lateral areas; forming a first photoresist layer; forming a plurality of bearing portions; removing the first photoresist layer to reveal the bearing portions, each bearing portion comprises a bearing surface having a first area and a second area; forming a second photoresist layer for revealing the first areas of the bearing surfaces; forming a plurality of connection portions, wherein the first areas of the bearing surfaces are covered by the connection portions to make each connection portion connect with each bearing portion to form a snap bump; removing the outer lateral areas of the metallic layer to make the base areas form a plurality of under bump metallurgy layers.

Abstract: A semiconductor manufacturing method includes providing a substrate having a metallic layer that includes a first metal layer and a second metal layer, the first metal layer comprises plural base areas and plural first outer lateral areas, the second metal layer comprises plural second base areas and plural second outer lateral areas; forming a first photoresist layer; forming plural bearing portions; removing the first photoresist layer; forming a second photoresist layer; forming plural connection portions, each connection portion comprises a first connection layer and a second connection layer; removing the second photoresist layer to reveal the connection portions and the bearing portions; removing the first outer lateral areas; reflowing the second connection layers to form plural composite bumps; removing the second outer lateral areas to make the first base areas and the second base areas form plural under bump metallurgy layers.

Abstract: The present invention relates to a method for manufacturing silicon thin-film solar cells, including: providing a substrate; forming a first electrode on the substrate; forming a first doped semiconductor layer on the first electrode by chemical vapor deposition; forming an intrinsic layer on the first doped semiconductor layer by chemical vapor deposition, where the intrinsic layer includes a plurality of amorphous/nanocrystalline silicon layers, and the intrinsic layer has various energy bandgaps formed by varying average grain sizes of the amorphous/nanocrystalline silicon layers; forming a second doped semiconductor layer on the intrinsic layer by chemical vapor deposition, where one of the first doped semiconductor layer and the second doped semiconductor layer is a p-type amorphous silicon layer and the other is an n-type amorphous/nano-microcrystalline silicon layer; and forming a second electrode on the second doped semiconductor layer.

Abstract: Disclosed is a miniature, two-dimensional, auto-cloning, polarizing beam splitter that includes a substrate and an optical multilayer. The substrate is formed with a periodic structure. The optical multilayer is formed on the periodic structure of the substrate. The optical multilayer includes a (LH)n structure wherein H represents a film of a high refractive index, and L represents a film of a low refractive index, and n is an integer. The auto-cloning polarizing beam splitter is operable to split infrared light of wavelengths of 1000 nm to 1300 nm.

Abstract: The present invention relates to a method for manufacturing silicon thin-film solar cells, including: providing a substrate; forming a first electrode on the substrate; forming a first doped semiconductor layer on the first electrode by chemical vapor deposition; forming an intrinsic layer on the first doped semiconductor layer by chemical vapor deposition, where the intrinsic layer includes a plurality of amorphous/nanocrystalline silicon layers, and the intrinsic layer has various energy bandgaps formed by varying average grain sizes of the amorphous/nanocrystalline silicon layers; forming a second doped semiconductor layer on the intrinsic layer by chemical vapor deposition, where one of the first doped semiconductor layer and the second doped semiconductor layer is a p-type amorphous silicon layer and the other is an n-type amorphous/nano-microcrystalline silicon layer; and forming a second electrode on the second doped semiconductor layer.

Abstract: A solar cell and a manufacturing method thereof are provided herein. The solar cell includes a substrate with a first transparent conductive layer, a micro- or nano-roughing structure formed on the first transparent conductive layer, and a semiconductor active layer formed on the micro- or nano-roughing structure and covering the micro- or nano-roughing structure.

Abstract: An original light source or a light source adopting a method to modulate the waveform intensity with a stack of gain-flattening filters includes the following procedures: preparing a stack of gain-flattening filters made of more than two or three aligned single filters, each is made by stacking on a substrate or on both sides of a substrate with several layers of optical films having different refractive indexes; followed by modulating the waveform intensity with a stack of gain-flattening filters installed at the emitting end of the original light source or light source, wherein the angle of each single filter can be adjusted to change the spectrum of a whole set of filters so that the waveform intensity of the original light source or light source is changeable when the emitted original light source or light source is modulated with a stack of gain-flattening filters.

Abstract: A disk brake for a bicycle includes a body having a first portion with a first passage defined in the first portion and a second portion with a second passage defined to correspond to the first passage. A first slot is defined in the body and communicates with the first passage and the second passage. A second slot is defined in an outer periphery of the body and communicates with the first slot. A locking notch is defined in the outer periphery of the body and communicates with the first slot near the second slot. A driving device is mounted in the body. Two brake pads are securely mounted in the first slot. Each brake pad includes an ear extending out to engage the locking notch to prevent the brake pad from rotating during braking.

Abstract: A digital image-capturing device is mounted removably in a film-loading chamber of a camera body, and includes a lens unit disposed in front of an image-sensing device. The image-sensing device and the lens unit are aligned with a lens member on the camera body along an optical axis when the image-capturing device is disposed in the film-loading chamber. Activation of a shutter mechanism enables the lens unit to refract light rays from the lens member so as to adjust focusing and size of an image of a target object that is formed on a sensing plane of the image-sensing device. A memory device stores digital image data generated by the image-sensing device. A control device controls exposure time of the image-sensing device, and further controls storage of data in the memory device.