Patents by Inventor Sheng-Hung Tu

Sheng-Hung Tu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240074206
    Abstract: A semiconductor device includes a random access memory (RAM) structure and a dielectric layer. The RAM structure is over a substrate and includes a bottom electrode layer, a ferroelectric layer over the bottom electrode layer, and a top electrode layer over the ferroelectric layer. The dielectric layer is over the substrate and laterally surrounds a lower portion of the RAM structure. From a cross-sectional view, the bottom electrode layer of the RAM structure has a lateral portion and a vertical portion, and the vertical portion upwardly extends from the lateral portion to a position higher than a top surface of the dielectric layer.
    Type: Application
    Filed: November 3, 2023
    Publication date: February 29, 2024
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Fu-Chen CHANG, Kuo-Chi TU, Tzu-Yu CHEN, Sheng-Hung SHIH
  • Patent number: 10790187
    Abstract: The disclosure relates to a cleaning composition that aids in the removal of post-etch residues and aluminum-containing material, e.g., aluminum oxide, in the production of semiconductors that utilize an aluminum-containing etch stop layer. The compositions have a high selectivity for post-etch residue and aluminum-containing materials relative to low-k dielectric materials, cobalt-containing materials and other metals on the microelectronic device.
    Type: Grant
    Filed: January 17, 2018
    Date of Patent: September 29, 2020
    Assignee: ENTEGRIS, INC.
    Inventors: Emanuel I. Cooper, Makonnen Payne, WonLae Kim, Eric Hong, Sheng-Hung Tu, Chieh Ju Wang, Chia-Jung Hsu
  • Patent number: 10651045
    Abstract: Described are compositions and methods useful for wet-etching a microelectronic device substrate that includes silicon nitride; the compositions including phosphoric acid, hexafluorosilicic acid, and an amino alkoxy silane, and optionally one or more additional optional ingredients; a wet etching method of a substrate that includes silicon nitride and silicon oxide, that uses a composition as described, can achieve useful or improved silicon nitride etch rate, useful or improved silicon nitride selectivity, a combination of these, and optionally a reduction in particles present at a substrate surface after etching.
    Type: Grant
    Filed: September 6, 2018
    Date of Patent: May 12, 2020
    Assignee: ENTEGRIS, INC.
    Inventors: Emanuel Cooper, Steven Bilodeau, Wen-Haw Dai, Min-Chieh Yang, Sheng-Hung Tu, Hsing-Chen Wu, Sean Kim, SeongJin Hong
  • Patent number: 10472567
    Abstract: Semi-aqueous compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., tungsten and copper, and insulating materials from a microelectronic device having same thereon. The semi-aqueous compositions contain at least one oxidant, at least one etchant, and at least one organic solvent, may contain various corrosion inhibitors to ensure selectivity.
    Type: Grant
    Filed: March 4, 2014
    Date of Patent: November 12, 2019
    Assignee: ENTEGRIS, INC.
    Inventors: Li-Min Chen, Emanuel I. Cooper, Steven Lippy, Lingyan Song, Chia-Jung Hsu, Sheng-Hung Tu, Chieh Ju Wang
  • Patent number: 10428271
    Abstract: Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to insulating materials from a microelectronic device having same thereon. The removal compositions contain at least one oxidant, one etchant, and one activator to enhance the etch rate of titanium nitride.
    Type: Grant
    Filed: August 28, 2014
    Date of Patent: October 1, 2019
    Assignee: Entegris, Inc.
    Inventors: Emanuel I. Cooper, Li-Min Chen, Steven Lippy, Chia-Jung Hsu, Sheng-hung Tu, Chieh Ju Wang
  • Patent number: 10392560
    Abstract: Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., tungsten, and insulating materials from a microelectronic device having same thereon. The removal compositions contain at least one oxidant and one etchant, may contain various corrosion inhibitors to ensure selectivity.
    Type: Grant
    Filed: January 17, 2017
    Date of Patent: August 27, 2019
    Assignee: ENTEGRIS, INC.
    Inventors: Jeffrey A. Barnes, Emanuel I. Cooper, Li-Min Chen, Steven Lippy, Rekha Rajaram, Sheng-Hung Tu
  • Patent number: 10340150
    Abstract: Compositions and methods for selectively removing unreacted metal material (e.g., unreacted nickel) relative to metal germanide (e.g., NiGe), metal-III-V materials, and germanium from microelectronic devices having same thereon. The compositions are substantially compatible with other materials present on the microelectronic device such as low-k dielectrics and silicon nitride.
    Type: Grant
    Filed: December 16, 2014
    Date of Patent: July 2, 2019
    Assignee: Entegris, Inc.
    Inventors: Steven Bilodeau, Jeffrey A. Barnes, Emanuel Cooper, Hsing-Chen Wu, Sheng-Hung Tu, Thomas Parson, Min-chieh Yang
  • Publication number: 20190074188
    Abstract: Described are compositions and methods useful for wet-etching a microelectronic device substrate that includes silicon nitride; the compositions including phosphoric acid, hexafluorosilicic acid, and an amino alkoxy silane, and optionally one or more additional optional ingredients; a wet etching method of a substrate that includes silicon nitride and silicon oxide, that uses a composition as described, can achieve useful or improved silicon nitride etch rate, useful or improved silicon nitride selectivity, a combination of these, and optionally a reduction in particles present at a substrate surface after etching.
    Type: Application
    Filed: September 6, 2018
    Publication date: March 7, 2019
    Inventors: Emanuel Cooper, Steven Bilodeau, Wen-Haw Dai, Min-Chieh Yang, Sheng-Hung Tu, Hsing-Chen Wu, Sean Kim, SeongJin Hong
  • Publication number: 20180204764
    Abstract: The disclosure relates to a cleaning composition that aids in the removal of post-etch residues and aluminum-containing material, e.g., aluminum oxide, in the production of semiconductors that utilize an aluminum-containing etch stop layer. The compositions have a high selectivity for post-etch residue and aluminum-containing materials relative to low-k dielectric materials, cobalt-containing materials and other metals on the microelectronic device.
    Type: Application
    Filed: January 17, 2018
    Publication date: July 19, 2018
    Inventors: Emanuel I. Cooper, Makonnen Payne, WonLae Kim, Eric Hong, Sheng-Hung Tu, Chieh Ju Wang, Chia-Jung Hsu
  • Patent number: 9765288
    Abstract: Liquid compositions useful for the cleaning of residue and contaminants from a III-V microelectronic device material, such as InGaAs, without substantially removing the III-V material. The liquid compositions are improvements of the SC1 and SC2 formulations.
    Type: Grant
    Filed: December 4, 2013
    Date of Patent: September 19, 2017
    Assignee: ENTEGRIS, INC.
    Inventors: Emanuel I. Cooper, Hsing-Chen Wu, Min-Chieh Yang, Sheng-Hung Tu, Li-Min Chen
  • Publication number: 20170260449
    Abstract: Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., tungsten, and insulating materials from a microelectronic device having same thereon. The removal compositions contain at least one oxidant and one etchant, may contain various corrosion inhibitors to ensure selectivity.
    Type: Application
    Filed: January 17, 2017
    Publication date: September 14, 2017
    Inventors: Jeffrey A. BARNES, Emanuel I. COOPER, Li-Min CHEN, Steven LIPPY, Rekha RAJARAM, Sheng-Hung TU
  • Patent number: 9546321
    Abstract: Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., tungsten, and insulating materials from a microelectronic device having same thereon. The removal compositions contain at least one oxidant and one etchant, may contain various corrosion inhibitors to ensure selectivity.
    Type: Grant
    Filed: December 27, 2012
    Date of Patent: January 17, 2017
    Assignee: ADVANCED TECHNOLOGY MATERIALS, INC.
    Inventors: Jeffrey A. Barnes, Emanuel I. Cooper, Li-Min Chen, Steven Lippy, Rekha Rajaram, Sheng-Hung Tu
  • Publication number: 20160314990
    Abstract: Compositions and methods for selectively removing unreacted metal material (e.g., unreacted nickel) relative to metal germanide (e.g., NiGe), metal-III-V materials, and germanium from microelectronic devices having same thereon. The compositions are substantially compatible with other materials present on the microelectronic device such as low-k dielectrics and silicon nitride.
    Type: Application
    Filed: December 16, 2014
    Publication date: October 27, 2016
    Applicants: ENTEGRIS, INC., ATMI TAIWAN CO., LTD.
    Inventors: Steven BILODEAU, Jeffrey A. BARNES, Emanuel COOPER, Hsing-Chen WU, Sheng-Hung TU, Thomas PARSON, Min-chieh YANG
  • Publication number: 20160200975
    Abstract: Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to insulating materials from a microelectronic device having same thereon. The removal compositions contain at least one oxidant, one etchant, and one activator to enhance the etch rate of titanium nitride.
    Type: Application
    Filed: August 28, 2014
    Publication date: July 14, 2016
    Inventors: Enamuel I. COOPER, Li-Min CHEN, Steven LIPPY, Chia-Jung HSU, Sheng-hung TU, Chieh Ju WANG
  • Publication number: 20160032186
    Abstract: Semi-aqueous compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., tungsten and copper, and insulating materials from a microelectronic device having same thereon. The semi-aqueous compositions contain at least one oxidant, at least one etchant, and at least one organic solvent, may contain various corrosion inhibitors to ensure selectivity.
    Type: Application
    Filed: March 4, 2014
    Publication date: February 4, 2016
    Inventors: Li-Min CHEN, Emanuel I. COOPER, Steven LIPPY, Lingyan SONG, Chia-Jung HSU, Sheng-Hung TU, Chieh Ju WANG
  • Publication number: 20150344825
    Abstract: Liquid compositions useful for the cleaning of residue and contaminants from a III-V microelectronic device material, such as InGaAs, without substantially removing the III-V material. The liquid compositions are improvements of the SC1 and SC2 formulations.
    Type: Application
    Filed: December 4, 2013
    Publication date: December 3, 2015
    Inventors: Emanuel I. COOPER, Hsing-Chen WU, Min-Chieh YANG, Sheng-Hung TU, Li-Min CHEN
  • Publication number: 20150075570
    Abstract: A semi-aqueous removal composition and process for selectively removing spin-on glass relative to a metal gate and/or ILD material from a microelectronic device having said material thereon. The semi-aqueous removal composition can be a fluoride-containing composition or an alkaline composition.
    Type: Application
    Filed: March 12, 2013
    Publication date: March 19, 2015
    Applicant: ENTEGRIS, INC.
    Inventors: Hsing-chen Wu, Sheng-hung Tu
  • Publication number: 20150027978
    Abstract: Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., tungsten, and insulating materials from a microelectronic device having same thereon. The removal compositions contain at least one oxidant and one etchant, may contain various corrosion inhibitors to ensure selectivity.
    Type: Application
    Filed: December 27, 2012
    Publication date: January 29, 2015
    Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.
    Inventors: Jeffrey A. Barnes, Emanuel I. Cooper, Li-Min Chen, Steven Lippy, Rekha Rajaram, Sheng-Hung Tu
  • Publication number: 20120021961
    Abstract: The present invention relates to a composition for post chemical-mechanical polishing (CMP) cleaning. The composition is alkaline, which can remove azole-type corrosion inhibitors on the wafer surface after CMP. This composition can effectively remove azole compounds, increase wettability of the Cu surface, and significantly improve the defect removal after CMP.
    Type: Application
    Filed: January 6, 2010
    Publication date: January 26, 2012
    Applicant: BASF SE
    Inventors: Andreas Klipp, Ting Hsu Hung, Kuochen Su, Sheng-Hung Tu