Patents by Inventor Sheng Lin

Sheng Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250038856
    Abstract: A communication device includes a first laser driver, a second laser driver, a light emitting and receiving component, and a processor. The light emitting and receiving component is connected to a passive optical network to send and/or receive an optical signal. The light emitting and receiving component converts the optical signal into a first electrical signal and outputs the first electrical signal to one of the first laser driver and the second laser driver. One of the first laser driver and the second laser driver converts the first electrical signal into a second electrical signal, and outputs the second electrical signal to the processor. The processor disables another one of the first laser driver and the second laser driver.
    Type: Application
    Filed: April 30, 2024
    Publication date: January 30, 2025
    Applicant: Gemtek Technology Co., Ltd.
    Inventors: Chang-Yuan Hsieh, Yu-Sheng Lin
  • Publication number: 20250034080
    Abstract: A novel type of cationic lipid and PEGylated derivative thereof, a cationic liposome and a cationic liposome-nucleic acid pharmaceutical composition containing the cationic lipid and formulation thereof include an ionizable lipid compound of the general formula (1). This compound is slightly ionized or neutral at physiological pH but undergoes greater ionization under acidic conditions, exhibiting lower toxicity in the systemic circulation and improved endosomal escape ability. The compound's polar head contains an ionizable tertiary amine group along with a side chain containing functional groups, while the tail chains may include linking groups that are easily degraded. Cationic liposomes containing the compound have a better ability to complex with nucleic acid drugs, higher stability in serum, no apparent cytotoxicity, and high transfection efficiency.
    Type: Application
    Filed: January 1, 2023
    Publication date: January 30, 2025
    Applicant: XIAMEN SINOPEG BIOTECH CO., LTD.
    Inventors: Sheng LIN, Minggui LIN, Dandan CHEN, Ailan WANG, Congming LIN, Qi ZHU, Wengui WENG, Chao LIU, Jinchun YUAN
  • Publication number: 20250038106
    Abstract: A bond structure is provided. The bond structure includes a seed layer and a conductive structure. The conductive structure includes a via portion over the seed layer and a plurality of wires protruding from the via portion.
    Type: Application
    Filed: July 28, 2023
    Publication date: January 30, 2025
    Applicant: Advanced Semiconductor Engineering, Inc.
    Inventors: Chun-Wei CHIANG, Yung-Sheng LIN, I-Ting LIN, Ping-Hung HSIEH, Chih-Yuan HSU
  • Patent number: 12209888
    Abstract: A reading device for capacitive sensing element comprises a differential capacitive sensing element, a modulator, a charge-voltage conversion circuit, a phase adjustment circuit, a demodulator and a low-pass filter. The modulator outputs a modulation signal to the common node of the capacitive sensing element and modulates the output signal of the capacitive sensing element. The two input terminals of the charge-to-voltage conversion circuit are connected to two non-common nodes of the capacitive sensing element. The charge-to-voltage converter read the output charge of the capacitive sensing element and convert it into a voltage signal. The modulator generates a demodulation signal through the phase adjustment circuit. The demodulator receives the demodulation signal from the phase adjustment circuit and demodulates the output of the charge-to-voltage conversion circuit. The low-pass filter is connected to the output of the demodulator for filtering the demodulated voltage signal to output the read signal.
    Type: Grant
    Filed: January 13, 2023
    Date of Patent: January 28, 2025
    Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Lu-Pu Liao, Yu-Sheng Lin, Liang-Ying Liu, Chin-Fu Kuo
  • Patent number: 12211836
    Abstract: A semiconductor device includes a first channel region disposed over a substrate, and a first gate structure disposed over the first channel region. The first gate structure includes a gate dielectric layer disposed over the channel region, a lower conductive gate layer disposed over the gate dielectric layer, a ferroelectric material layer disposed over the lower conductive gate layer, and an upper conductive gate layer disposed over the ferroelectric material layer. The ferroelectric material layer is in direct contact with the gate dielectric layer and the lower gate conductive layer, and has a U-shape cross section.
    Type: Grant
    Filed: June 27, 2023
    Date of Patent: January 28, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chia-Wen Chang, Hong-Nien Lin, Chien-Hsing Lee, Chih-Sheng Chang, Ling-Yen Yeh, Wilman Tsai, Yee-Chia Yeo
  • Patent number: 12211699
    Abstract: A method of removing a step height on a gate structure includes providing a substrate. A gate structure is disposed on the substrate. A dielectric layer covers the gate structure and the substrate. Then, a composite material layer is formed to cover the dielectric layer. Later, part of the composite material layer is removed to form a step height disposed directly on the gate structure. Subsequently, a wet etching is performed to remove the step height. After the step height is removed, the dielectric layer is etched to form a first contact hole to expose the gate structure.
    Type: Grant
    Filed: July 4, 2022
    Date of Patent: January 28, 2025
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Yeh-Sheng Lin, Chang-Mao Wang, Chun-Chi Yu, Chung-Yi Chiu
  • Publication number: 20250031381
    Abstract: A method of forming a semiconductor device is provided. A first ferroelectric inducing layer including Ru is deposited on a substrate. A ferroelectric layer including HfZrO is deposited on the first ferroelectric inducing layer. A second ferroelectric inducing layer including Ru is deposited on the ferroelectric layer, wherein the HfZrO of the ferroelectric layer is in physical contact with the Ru of the first ferroelectric inducing layer and the Ru of the second ferroelectric inducing layer. The second ferroelectric inducing layer, the ferroelectric layer and the first ferroelectric inducing layer are patterned.
    Type: Application
    Filed: July 21, 2023
    Publication date: January 23, 2025
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Bo-Jiun Lin, Chih-Sheng Chang, Yu-Chao Lin, Tung-Ying Lee
  • Publication number: 20250027227
    Abstract: Provided are a silicon carbide crystal growth device and a quality control method. The device includes: an annealing unit, a crystal growth unit, an atmosphere control unit, and a transport system; the atmosphere control unit provides a gas environment with low water, oxygen and nitrogen; the transport system transports a plurality of target objects after high-temperature purification by the annealing unit to the atmosphere control unit; after assembling silicon carbide seed crystal and silicon carbide powder in a graphite crucible and covering with thermal insulation material to form a container inside the atmosphere control unit, the transport system transports the container to the crystal growth unit. The method uses a weighing system in a chamber of the crystal growth unit to detect a weight change of silicon carbide seed crystal and silicon carbide powder during a crystal growth process through a plurality of weight sensors of the weighing system.
    Type: Application
    Filed: July 20, 2023
    Publication date: January 23, 2025
    Inventors: Yun-Fu Chen, Wei-Tse Hsu, Min-Sheng Chu, Chien-Li Yang, Tsu-Hsiang Lin, Yuan-Hong Huang
  • Publication number: 20250031365
    Abstract: A memory structure including a substrate, charge storage layers, and a gate is provided. The charge storage layers are located on the substrate. The gate is located on the substrate on one side of the charge storage layers. The gate extends along a first direction. The gate has a protruding portion protruding along a second direction. The second direction intersects the first direction. The protruding portion is located between two adjacent charge storage layers arranged along the first direction.
    Type: Application
    Filed: August 4, 2023
    Publication date: January 23, 2025
    Applicant: United Microelectronics Corp.
    Inventors: Hsin-Chieh Lin, Po-Jui Chiang, Pei Lun Jheng, Chao-Sheng Cheng, Ming-Jen Chang, Ko Chin Chang, Yu Ming Liu
  • Patent number: 12205840
    Abstract: A horizontally oriented calibration jig for a wafer gripper arm of an ion implanter is disclosed. The calibration jig is mounted within the process chamber of the ion implanter. The calibration jig includes a mounting plate that spans a diameter of the wafer gripper arm, a support stand passing through the mounting plate, and a calibration plate at a bottom end of the support stand. The perimeter of the calibration plate includes a plurality of notches. The calibration plate is rotated. If any finger of the wafer gripper arm falls into a notch, the rotating calibration plate stops. The finger is then adjusted until it does not fall into a notch.
    Type: Grant
    Filed: August 17, 2022
    Date of Patent: January 21, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Lung-Yin Tang, Tsung-Min Lin, Hsin-Sheng Liang
  • Patent number: 12205531
    Abstract: An electronic device comprises a display and a controller. The controller is configured to provide a first frequency refresh rate to the display. The controller is also configured to generate a control signal configured to control emission of a light emitting diode of a display pixel of the display at a second frequency based on whether the first frequency refresh rate of the display is less than a predetermined threshold value.
    Type: Grant
    Filed: April 25, 2023
    Date of Patent: January 21, 2025
    Assignee: Apple Inc.
    Inventors: Chin-Wei Lin, Hung Sheng Lin, Vasudha Gupta, Shinya Ono, Tsung-Ting Tsai, Shyuan Yang
  • Patent number: 12203140
    Abstract: The present invention discloses a set of novel epigenetic biomarkers for early prediction, treatment response, recurrence and prognosis monitoring of a breast cancer. Aberrant methylation of the genes can be detected in tumor tissues and plasma samples from breast cancer patients but not in normal healthy individual. The present disclosure also discloses primers and probes used herein.
    Type: Grant
    Filed: May 8, 2019
    Date of Patent: January 21, 2025
    Assignee: EG BIOMED CO., LTD.
    Inventors: Ruo-Kai Lin, Chin-Sheng Hung, Sheng-Chao Wang, Yu-Mei Chung, Chih-Ming Su
  • Patent number: 12205238
    Abstract: A system produces a dolly zoom effect by utilizing side view information. The system first captures a main image at a main location. The main image includes at least a foreground object of a given size and a background. The system calculates one or more side view locations based on a zoom-in factor to be applied to the background and an estimated size of the foreground object. The system then guides a user to capture one or more side view images at the one or more side view locations. The foreground object of the given size is superimposed onto a zoomed-in background. Then the side view information is used by the system to perform image inpainting.
    Type: Grant
    Filed: April 18, 2022
    Date of Patent: January 21, 2025
    Assignee: MediaTek Inc.
    Inventors: Chih-Wei Chen, Pei-Kuei Tsung, Yao-Sheng Wang, Chun Chen Lin, Chia-Ching Lin
  • Patent number: 12205237
    Abstract: A device produces a dolly zoom effect with automatic focal length adjustment. The device uses a camera to capture an initial image including at least a foreground object and a background. The device includes a size tracking circuit to identify the size of the foreground object in the initial image. The device further includes a focal length control circuit. The focal length control circuit calculates an adjusted focal length of the camera to maintain the size of the foreground object in subsequently captured images.
    Type: Grant
    Filed: April 18, 2022
    Date of Patent: January 21, 2025
    Assignee: MediaTek Inc.
    Inventors: Chih-Wei Chen, Pei-Kuei Tsung, Yao-Sheng Wang, Chun Chen Lin, Chia-Ching Lin, Hsiao-Chien Chiu
  • Publication number: 20250023642
    Abstract: Disclosed are a co-packaged integrated optoelectronic module and a co-packaged optoelectronic switch chip. The co-packaged integrated optoelectronic module includes a carrier board, and an optoelectronic submodule, a slave microprocessor and a master microprocessor disposed on and electrically connected to the carrier board. In the optoelectronic submodule, a digital signal processing chip converts an electrical analog signal into an electrical digital signal, an optoelectronic signal analog conversion chip converts an optical analog signal into the electrical analog signal to the digital signal processing chip, and an optical transceiver chip receives and transmits the optical analog signal to the optoelectronic signal analog conversion chip. The slave microprocessor monitors operation of the optoelectronic submodule.
    Type: Application
    Filed: September 25, 2024
    Publication date: January 16, 2025
    Applicant: Dongguan Luxshare Technologies Co., Ltd
    Inventors: Min-Sheng KAO, ChunFu WU, Chung-Hsin FU, QianBing YAN, LinChun LI, Chih-Wei YU, Chien-Tzu WU, Yi-Tseng LIN
  • Publication number: 20250018971
    Abstract: A vehicle control method includes obtaining sensor information of different modalities of different onboard devices of a vehicle, performing modality transformation on the sensor information to generate short-cycle message information of a unified modality, sending the short-cycle message information to a first data model at a remote end, generating long-cycle message information by a second data model configured at the vehicle based on the sensor information with the different modalities, sending the long-cycle message information to the first data model at the remote end, receiving the vehicle control information returned by the first data model at the remote end, and controlling the vehicle based on the vehicle control information. The short-cycle message information has better real-time performance than the long-cycle message information, and the long-cycle message information is used to trigger the first data model to generate vehicle control information.
    Type: Application
    Filed: March 21, 2024
    Publication date: January 16, 2025
    Inventors: Zhongkang LIN, Sheng TAO, Xuejian LI, Hongfeng ZHAO
  • Publication number: 20250020570
    Abstract: A method for inspecting particles is suitable for inspecting particles on a substrate. The method for inspecting the particles includes the following. The substrate is disposed on a stage. An inspection radiation is provided to irradiate on the substrate, in which the inspection radiation is suitable for exciting the particles on the substrate to emit a secondary radiation. Also, the secondary radiation is detected to confirm whether the particles exist on the substrate and positions of the particles are detected.
    Type: Application
    Filed: April 9, 2024
    Publication date: January 16, 2025
    Applicant: National Tsing Hua University
    Inventors: Tsai-Sheng Gau, Burn Jeng Lin, Po-Hsiung Chen, Po-Hsun Lu, Meng-Chen Lo
  • Publication number: 20250022766
    Abstract: A semiconductor device includes: a substrate; a seed layer disposed on the substrate; a compound semiconductor stack layer disposed on the seed layer; and a source metal layer and a drain metal layer disposed on the compound semiconductor stack layer. The semiconductor device further includes a conductive layer at least partially covering the source metal layer and the drain metal layer, and covering opposing side surfaces of the seed layer and opposing side surfaces of the compound semiconductor stack layer. The conductive layer electrically connects the seed layer and the source metal layer.
    Type: Application
    Filed: October 1, 2024
    Publication date: January 16, 2025
    Applicant: Vanguard International Semiconductor Corporation
    Inventors: Hsiu-Mei YU, Guang-Yuan JIANG, Cheng-Yi HSIEH, Wei-Chan CHANG, Chang-Sheng LIN
  • Publication number: 20250024476
    Abstract: A synergetic communication method for relay node configuration and protocol stacks is proposed. A network node may generate a scheduling which indicates the relay node configurations associated with an aggregated group based on the capability information from a user equipment (UE). The scheduling may comprise different configurations for the relay nodes in the aggregated group. In addition, the network node may transmit or schedule the scheduling for controlling the aggregated group to the UE. The UE may transmit the capability information associated with the relay node(s) in the aggregated group to the network node. Therefore, the network node is able to configure the configuration for the relay node with limited capability.
    Type: Application
    Filed: January 10, 2023
    Publication date: January 16, 2025
    Inventors: Guan-Yu LIN, Chia-Hao YU, Lung-Sheng TSAI, Nathan Edward TENNY
  • Publication number: 20250022423
    Abstract: A display may have an array of pixels each of which has a light-emitting diode such as an organic light-emitting diode. A drive transistor and an emission transistor may be coupled in series with the light-emitting diode of each pixel between a positive power supply and a ground power supply. The pixels may include first and second switching transistors. A data storage capacitor may be coupled between a gate and source of the drive transistor in each pixel. Signal lines may be provided in columns of pixels to route signals such as data signals, sensed drive currents from the drive transistors, and predetermined voltages between display driver circuitry and the pixels. The switching transistors, emission transistors, and drive transistors may include semiconducting-oxide transistors and silicon transistors and may be n-channel transistors or p-channel transistors.
    Type: Application
    Filed: October 2, 2024
    Publication date: January 16, 2025
    Inventors: Chin-Wei Lin, Hung Sheng Lin, Shih Chang Chang, Shinya Ono