Patents by Inventor Shigehiro Miura

Shigehiro Miura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11328901
    Abstract: A deposition method performed by a deposition apparatus is provided. The deposition apparatus includes an antenna that forms an inductive magnetic field in a plasma processing region; and a rotary table that revolves a substrate around a rotational center of the rotary table. The method includes: supplying an ignition gas containing a noble gas and an additive gas to the plasma processing region; setting electric power supplied to the antenna to a first predetermined value to form a plasma of the ignition gas; increasing the electric power to a second predetermined value; stopping the supply of the additive gas; switching a gas supplied to the plasma processing region from the ignition gas to a gas for forming the film; and lifting an end of the antenna on a side closer to the rotational center while maintaining a height of another end of the antenna.
    Type: Grant
    Filed: March 23, 2020
    Date of Patent: May 10, 2022
    Assignee: Tokyo Electron Limited
    Inventors: Shigehiro Miura, Masato Yonezawa, Takehiro Fukada, Yoshitaka Enoki, Yuji Sawada
  • Patent number: 11274372
    Abstract: A film deposition apparatus includes a process chamber, a rotary table, a first reaction gas supply part disposed in a first process region and configured to supply a first reaction gas, a second reaction gas supply part disposed in a second process region apart from the first reaction gas supply part in a circumferential direction of the rotary table and configured to supply a second reaction gas, and separation gas supply parts disposed in a separation region between the first reaction gas supply part and the second reaction gas supply part and configured to supply a separation gas for separating the first reaction gas and the second reaction gas. The separation gas supply parts are configured to supply, in addition to the separation gas, an additive gas for controlling adsorption of the first reaction gas or for etching a part of material components included in the first reaction gas.
    Type: Grant
    Filed: May 10, 2017
    Date of Patent: March 15, 2022
    Assignee: Tokyo Electron Limited
    Inventor: Shigehiro Miura
  • Patent number: 11131023
    Abstract: A film deposition apparatus includes a process chamber and a turntable provided in the process chamber. The turntable includes a substrate receiving region to receive a substrate thereon and provided along a circumferential direction of the turntable. A source gas supply unit extending along a radial direction of the turntable is provided above the turntable with a first distance from the turntable such that the source gas supply unit covers an entire length of the substrate receiving region in the radial direction. An axial-side supplementary gas supply unit is provided in the vicinity of the source gas supply unit and above the turntable with a second distance from the turntable. The second distance is longer than the first distance. The axial-side supplementary gas supply unit covers a predetermined region of the substrate receiving region on the axial side in the radial direction of the turntable.
    Type: Grant
    Filed: November 8, 2017
    Date of Patent: September 28, 2021
    Assignee: Tokyo Electron Limited
    Inventors: Shigehiro Miura, Jun Sato
  • Patent number: 11118264
    Abstract: A plasma processing method is provided. In the plasma processing method, a plurality of types of mixed gases is supplied to a plurality of areas on a film deposited on a surface of a substrate. The plurality of types of mixed gases contains a plurality types of noble gases. The plurality of types of mixed gases has different mix proportions of the plurality types of noble gases from each other. The plurality of types of mixed gases is converted to plasma. A plasma process is performed by using the mixed gases converted to the plasma on the film.
    Type: Grant
    Filed: November 7, 2016
    Date of Patent: September 14, 2021
    Assignee: Tokyo Electron Limited
    Inventor: Shigehiro Miura
  • Patent number: 11085113
    Abstract: A film forming apparatus includes a rotary table having a loading area at a first surface side thereof and revolving a substrate loaded on the loading area, a rotation mechanism rotating the loading area such that the substrate rotates around its axis, a processing gas supply mechanism supplying a processing gas to a processing gas supply area so that a thin film is formed on the substrate which repeatedly passes through the processing gas supply area the revolution of the substrate, and a control part configured to perform a calculation of a rotation speed of the substrate based on a parameter including a rotation speed of the rotary table to allow an orientation of the substrate to be changed whenever the substrate is positioned in the processing gas supply area, and to output a control signal for rotating the substrate at a calculated rotation speed.
    Type: Grant
    Filed: June 28, 2018
    Date of Patent: August 10, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Hitoshi Kato, Shigehiro Miura, Hiroyuki Kikuchi, Katsuyoshi Aikawa
  • Patent number: 10796902
    Abstract: A method performed by a film deposition apparatus includes supplying a first reaction gas, which is adsorbable to hydroxyl groups, to a surface of a substrate and causing the first reaction gas to be adsorbed onto the surface of the substrate; supplying a second reaction gas to the substrate and causing the second reaction gas to react with the first reaction gas adsorbed onto the surface of the substrate to form a reaction product on the substrate; supplying an activated third reaction gas to the substrate to modify a surface of the reaction product; and supplying a fourth reaction gas including a hydrogen-containing gas to at least a partial area of the modified surface of the reaction product to form hydroxyl groups on at least the partial area.
    Type: Grant
    Filed: May 11, 2017
    Date of Patent: October 6, 2020
    Assignee: Tokyo Electron Limited
    Inventor: Shigehiro Miura
  • Publication number: 20200312621
    Abstract: A deposition method performed by a deposition apparatus is provided. The deposition apparatus includes an antenna that forms an inductive magnetic field in a plasma processing region; and a rotary table that revolves a substrate around a rotational center of the rotary table. The method includes: supplying an ignition gas containing a noble gas and an additive gas to the plasma processing region; setting electric power supplied to the antenna to a first predetermined value to form a plasma of the ignition gas; increasing the electric power to a second predetermined value; stopping the supply of the additive gas; switching a gas supplied to the plasma processing region from the ignition gas to a gas for forming the film; and lifting an end of the antenna on a side closer to the rotational center while maintaining a height of another end of the antenna.
    Type: Application
    Filed: March 23, 2020
    Publication date: October 1, 2020
    Inventors: Shigehiro MIURA, Masato YONEZAWA, Takehiro FUKADA, Yoshitaka ENOKI, Yuji SAWADA
  • Patent number: 10683573
    Abstract: A film forming apparatus of forming a film by supplying a process gas onto a substrate includes a rotation table having a loading region and is configured to revolve the substrate loaded on the loading region; a process gas supply mechanism configured to supply the process gas to a gas supply region to perform film formation on the substrate repeatedly passing through the gas supply region a plurality of times by revolution of the substrate; a first gear disposed on the other surface side of the rotation table and rotated in a rotation direction of the rotation table; a second gear configured with planetary gears engaging with the first gear, disposed to be revolved together with the loading region, and configured to rotate the loading region so as to allow the substrate to be rotated.
    Type: Grant
    Filed: November 10, 2015
    Date of Patent: June 16, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Hitoshi Kato, Shigehiro Miura, Hiroyuki Kikuchi, Katsuyoshi Aikawa
  • Patent number: 10604837
    Abstract: A film deposition apparatus includes a process chamber having a substantially cylindrical shape, and a turntable to receive a substrate thereon provided in the process chamber. At least one gas nozzle extends toward a central axis of the turntable from an inner side wall of the process chamber above the turntable along a radial direction of the turntable. At least one side wall heater is provided to cover at least part of the inner side wall of the process chamber and/or at least part of a surrounding area of the central axis of the turntable in a wall-shaped manner.
    Type: Grant
    Filed: February 9, 2016
    Date of Patent: March 31, 2020
    Assignee: Tokyo Electron Limited
    Inventors: Hitoshi Kato, Shigehiro Miura
  • Publication number: 20190360092
    Abstract: A method for dry cleaning a susceptor is performed after a substrate is removed from a processing chamber of a substrate processing apparatus. In the method, a cleaning gas for dry cleaning is supplied to a first region including a substrate receiving region in the susceptor. The cleaning gas is regionally supplied to a second region where the cleaning gas is difficult to reach when the cleaning gas is supplied to the first region.
    Type: Application
    Filed: May 21, 2019
    Publication date: November 28, 2019
    Inventors: Jun SATO, Shigehiro MIURA, Takashi CHIBA
  • Patent number: 10480067
    Abstract: A film deposition method for filling a recessed pattern with a SiN film is provided. NH2 groups are caused to adsorb on a surface of a substrate containing a recessed pattern formed in a top surface of the substrate by supplying a first process gas containing NH3 converted to first plasma to the surface of the substrate containing the recessed pattern. The NH2 groups is partially converted to N groups by supplying a second process gas containing N2 converted to second plasma to the surface of the substrate containing the recessed pattern on which the NH2 groups is adsorbed. A silicon-containing gas is caused to adsorb on the NH2 groups by supplying the silicon-containing gas to the surface of the substrate containing the recessed pattern on which the NH2 groups and the N groups are adsorbed. The above steps are cyclically repeated.
    Type: Grant
    Filed: January 31, 2017
    Date of Patent: November 19, 2019
    Assignee: Tokyo Electron Limited
    Inventors: Hitoshi Kato, Masahiro Murata, Jun Sato, Shigehiro Miura
  • Publication number: 20190284691
    Abstract: There is provided a film forming method including: a modification process of modifying an oxide film formed on a substrate using oxygen radicals generated by a plasma source in a predetermined plasma processing region defined within a processing chamber; and an ignition preparation process of turning an internal state of the predetermined plasma processing region into a state in which plasma is likely to be ignited after the oxide film is formed on the substrate.
    Type: Application
    Filed: March 18, 2019
    Publication date: September 19, 2019
    Inventors: Shigehiro MIURA, Takashi CHIBA, Takehiro FUKADA
  • Publication number: 20190276935
    Abstract: A film forming apparatus for performing a predetermine film forming process on a substrate mounted on an upper surface of a rotary table installed within a process vessel while rotating the rotary table and heating the substrate by a heating part, includes: a contact type first temperature measuring part configured to measure a temperature of the heating part; a non-contact type second temperature measuring part configured to measure a temperature of the substrate; and a control part configured to control a power supplied to the heating part based on at least one among a first measurement value measured by the first temperature measuring part and a second measurement value measured by the second temperature measuring part. The control part changes a method for controlling the power when the predetermined film forming process is performed on the substrate and when the substrate is loaded into or unloaded from the process vessel.
    Type: Application
    Filed: May 30, 2019
    Publication date: September 12, 2019
    Inventors: Masato YONEZAWA, Shigehiro MIURA, Hiroyuki AKAMA, Koji YOSHII
  • Patent number: 10385453
    Abstract: A film forming apparatus for performing a predetermined film forming process on a substrate mounted on an upper surface of a rotary table installed within a process vessel while rotating the rotary table and heating the substrate by a heating part, includes: a contact type first temperature measuring part configured to measure a temperature of the heating part; a non-contact type second temperature measuring part configured to measure a temperature of the substrate; and a control part configured to control a power supplied to the heating part based on at least one among a first measurement value measured by the first temperature measuring part and a second measurement value measured by the second temperature measuring part. The control part changes a method for controlling the power when the predetermined film forming process is performed on the substrate and when the substrate is loaded into or unloaded from the process vessel.
    Type: Grant
    Filed: August 18, 2016
    Date of Patent: August 20, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Masato Yonezawa, Shigehiro Miura, Hiroyuki Akama, Koji Yoshii
  • Patent number: 10358720
    Abstract: A substrate processing apparatus includes: a process chamber; a rotary table provided within the process chamber so as to place a substrate on a surface of the rotary table; a first process gas supply region including a first process gas supply part that supplies a first process gas to the substrate; a second process gas supply region including a second process gas supply part that supplies a second process gas to the substrate; first and second exhaust ports provided below the rotary table; and a conductance reduction part that reduces conductance in the vicinity of the first exhaust port in a route along which the second process gas flows toward the first exhaust port through a communication space, the communication space being generated by upward movement of the rotary table and allowing the first exhaust port and the second exhaust port to communicate with each other.
    Type: Grant
    Filed: July 5, 2016
    Date of Patent: July 23, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventor: Shigehiro Miura
  • Patent number: 10287675
    Abstract: A film deposition method for forming a film of a reaction product includes adsorbing a first process gas to a surface of a substrate; reacting the first process gas and a second process gas to generate a reaction product; and modifying a surface of the reaction product by plasma activating a plasma processing gas and supplying the plasma processing gas to the substrate, wherein in the modifying the surface of the reaction product, a first plasma processing gas is supplied to form a flow of the first plasma processing gas in a direction parallel to the surface of the substrate over an entire surface of the substrate, and also a second plasma processing gas containing hydrogen containing gas is supplied at an upstream side of the flow of the first plasma processing gas in the direction parallel to the surface of the substrate.
    Type: Grant
    Filed: January 17, 2017
    Date of Patent: May 14, 2019
    Assignee: Tokyo Electron Limited
    Inventor: Shigehiro Miura
  • Patent number: 10217642
    Abstract: A substrate processing apparatus includes a process chamber, and a turntable provided in the process chamber and including a substrate holding region formed in a top surface along a circumferential direction of the turntable. A surface area increasing region is provided in the top surface of the turntable around the substrate holding region and is configured to increase a surface area of the top surface of the turntable to an area larger than a surface area of a flat surface by including a concavo-convex pattern in its top surface. A process gas supply unit is configured to supply a process gas to the top surface of the turntable.
    Type: Grant
    Filed: October 25, 2016
    Date of Patent: February 26, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Jun Sato, Shigehiro Miura
  • Patent number: 10202687
    Abstract: There is provided a substrate processing method using a processing chamber that is provided with a first process gas supply region, a first exhaust port through which a first process gas supplied to the first process gas supply region is exhausted, a second process gas supply region, a second exhaust port through which a second process gas supplied to the second process gas supply region is exhausted, and a communication space through which the first exhaust port and the second exhaust port communicate with each other, wherein an exhaust pressure in the first exhaust port is set higher than an exhaust pressure in the second exhaust port by a predetermined pressure so as to perform a substrate process while preventing infiltration of the second process gas into the first exhaust port.
    Type: Grant
    Filed: June 27, 2016
    Date of Patent: February 12, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Shigehiro Miura, Jun Sato
  • Patent number: 10151034
    Abstract: A substrate processing apparatus includes a rotary table arranged in a vacuum chamber, a first reaction gas supply unit that supplies a first reaction gas to a surface of the rotary table, a second reaction gas supply unit that is arranged apart from the first reaction gas supply unit and supplies a second reaction gas, which reacts with the first reaction gas, to the surface of the rotary table, and an activated gas supply unit that is arranged apart from the first and second reaction gas supply units. The activated gas supply unit includes a discharge unit that supplies an activated fluorine-containing gas to the surface of the rotary table, a pipe that is arranged upstream of the discharge unit and supplies the fluorine-containing gas to the discharge unit, and at least one hydrogen-containing gas supply unit arranged at the pipe for supplying a hydrogen-containing gas into the pipe.
    Type: Grant
    Filed: February 24, 2016
    Date of Patent: December 11, 2018
    Assignee: Tokyo Electron Limited
    Inventor: Shigehiro Miura
  • Patent number: 10151031
    Abstract: A method for processing a substrate is provided. According to the method, a process gas is supplied to a surface of a substrate, and then a separation gas is supplied to the surface of the substrate. Moreover, a first plasma processing gas is supplied to the surface of the substrate in a first state in which a distance between the first plasma generation unit and the turntable is set at a first distance, and a second plasma processing gas is supplied to the surface of the substrate in a second state in which a distance between the second plasma generation unit and the turntable is set at a second distance shorter than the first distance. Furthermore, the separation gas is supplied to the surface of the substrate.
    Type: Grant
    Filed: June 8, 2017
    Date of Patent: December 11, 2018
    Assignee: Tokyo Electron Limited
    Inventors: Hitoshi Kato, Jun Sato, Masahiro Murata, Kentaro Oshimo, Tomoko Sugano, Shigehiro Miura