Abstract: By feeding an appropriate voltage as a signal ?TX to a transfer gate TG, a MOS transistor T1 is operated in a threshold region. A potential linearly or natural logarithmically converted by a buried photodiode PD is transferred to an N-type floating diffusion layer FD so as to be fed out, as an image signal, via MOS transistors T3 and T4.

Abstract: In a solid-state image sensing device, a method for driving the solid-state image sensing device, and an image sensing system incorporated with the solid-state image sensing device of the invention, pixel signals having two or more different photoelectric conversion characteristics to be outputted from a pixel section are amplified by using an analog gain with respect to each of the photoelectric conversion characteristics for outputting the amplified pixel signals. This enables to reproduce an image having a wide dynamic range while suppressing lowering of the frame rate.

Abstract: By feeding an appropriate voltage as a signal ?TX to a transfer gate TG, a MOS transistor T1 is operated in a threshold region. A potential linearly or natural logarithmically converted by a buried photodiode PD is transferred to an N-type floating diffusion layer FD so as to be fed out, as an image signal, via MOS transistors T3 and T4.

Abstract: By feeding an appropriate voltage as a signal ?TX to a transfer gate TG, a MOS transistor T1 , is operated in a threshold region. A potential linearly or natural logarithmically converted by a buried photodiode PD is transferred to an N-type floating diffusion layer FD so as to be fed out, as an image signal, via MOS transistors T3 and T4.

Abstract: A solid-state image-sensing device has a MOS transistor (T1) connected to a photodiode PD (PD) and performing photoelectric conversion, and has, as an integrating circuit for amplifying and integrating the photoelectric current obtained by the photoelectric conversion, a MOS transistor T2 and a capacitor C. In the solid-state image-sensing device, integration operation is controlled by a MOS transistor T6 connected to the gate of the MOS transistor T2.

Abstract: A solid-state image sensing device is provided with n one-dimensional pixel arrays for sensing a document image by relative movement of the one-dimensional pixel arrays and the document image in a scanning direction. The solid-state image sensing device includes: an image readout circuit, commonly provided for the one-dimensional pixel arrays, for performing a horizontal readout operation from the one-dimensional pixel arrays with respect to image data acquired by sensing the document image, wherein a pixel array pitch of the one-dimensional pixel arrays in the scanning direction is set to at least (n+1)/n times as large as a pixel width of each of pixels constituting the one-dimensional pixel arrays in the scanning direction, where the symbol “n” represents a positive integer of 2 or more, and the symbol “/” represents division.

Abstract: A solid state image sensing device includes an MOS transistor T2 that has a source thereof connected to a drain of an MOS transistor T1 being provided with a transfer gate which is connected to an embedded photodiode PD; an MOS transistor T5 that has a gate thereof connected to the drain of the MOS transistor T1; and a condenser that has a source thereof connected to the MOS transistor T5. When a linear conversion operation is performed in an entire range of luminance, the MOS transistor T2 works, serving as a switch for resetting, and at least when a logarithmic conversion operation is performed in a part of the range of luminance, the MOS transistor T2 works in a sub-threshold region.

Abstract: An image input apparatus which reconfigures a single reconfigured image from a plurality of low-resolution, object reduced images formed in a specified region on the light detecting element by the micro-lens array, wherein a high-resolution, single reconfigured image can be obtained even if the distance between the subject and the micro-lens array is long (infinitely long, for example), and further a reconfigured image can be realized in colors. The image input apparatus is characterized in that the relative distance between a micro-lens (1a) and light detecting cells (3a) in a specified region, where object reduced images corresponding to the micro-lens (1a) are formed, is different in each micro-lenses (1a). In addition, the light detecting cells (3a) are divided into a plurality of regions, and color filters (primary color filter, or complementary color filter, for example) are disposed in each of the divided regions.

Abstract: A solid-state image-sensing device has a MOS transistor (T1) connected to a photodiode PD (PD) and performing photoelectric conversion, and has, as an integrating circuit for amplifying and integrating the photoelectric current obtained by the photoelectric conversion, a MOS transistor T2 and a capacitor C. In the solid-state image-sensing device, integration operation is controlled by a MOS transistor T6 connected to the gate of the MOS transistor T2.

Abstract: In a solid-state image sensing device, a method for driving the solid-state image sensing device, and an image sensing system incorporated with the solid-state image sensing device of the invention, pixel signals having two or more different photoelectric conversion characteristics to be outputted from a pixel section are amplified by using an analog gain with respect to each of the photoelectric conversion characteristics for outputting the amplified pixel signals. This enables to reproduce an image having a wide dynamic range while suppressing lowering of the frame rate.

Abstract: A solid state image sensing device comprises an MOS transistor T2 that has a source thereof connected to a drain of an MOS transistor T1 being provided with a transfer gate which is connected to an embedded photodiode PD; an MOS transistor T5 that has a gate thereof connected to the drain of the MOS transistor T1; and a condenser that has a source thereof connected to the MOS transistor T5. When a linear conversion operation is performed in an entire refuge of luminance, the MOS transistor T2 works, serving as a switch for resetting, and at least when a logarithmic conversion operation is performed in a part of the range of luminance, the MOS Transistor T2 works in a sub-threshold region.

Abstract: A solid-state image sensing device is provided with n one-dimensional pixel arrays for sensing a document image by relative movement of the one-dimensional pixel arrays and the document image in a scanning direction. The solid-state image sensing device includes: an image readout circuit, commonly provided for the one-dimensional pixel arrays, for performing a horizontal readout operation from the one-dimensional pixel arrays with respect to image data acquired by sensing the document image, wherein a pixel array pitch of the one-dimensional pixel arrays in the scanning direction is set to at least (n+1)/n times as large as a pixel width of each of pixels constituting the one-dimensional pixel arrays in the scanning direction, where the symbol “n” represents a positive integer of 2 or more, and the symbol “/” represents division.

Abstract: Each unit pixel has a photodiode PD, an amplifying MOS transistor T1 having its gate connected to the cathode of the photodiode PD, and a MOS transistor T2 having its source connected to the node between the photodiode PD and the gate of the MOS transistor T1. Forming only two MOS transistors other than a photodiode PD functioning as a photoelectric converter helps improve the open-area ratio.

Abstract: An image input apparatus which reconfigures a single reconfigured image from a plurality of low-resolution, object reduced images formed in a specified region on the light detecting element by the micro-lens array, wherein a high-resolution, single reconfigured image can be obtained even if the distance between the subject and the micro-lens array is long (infinitely long, for example), and further a reconfigured image can be realized in colors. The image input apparatus is characterized in that the relative distance between a micro-lens (1a) and light detecting cells (3a) in a specified region, where object reduced images corresponding to the micro-lens (1a) are formed, is different in each micro-lenses (1a). In addition, the light detecting cells (3a) are divided into a plurality of regions, and color filters (primary color filter, or complementary color filter, for example) are disposed in each of the divided regions.

Abstract: An image input apparatus has a photoelectric converter element having a flat photosensitive surface and an image formation unit array having a plurality of image formation units arranged in an array. This image formation units individually receive light beams substantially from an identical area and focus the received light beams on different regions of the photosensitive surface of the photoelectric converter element to form images thereon.

Abstract: By feeding an appropriate voltage as a signal ?TX to a transfer gate TG, a MOS transistor T1 , is operated in a threshold region. A potential linearly or natural logarithmically converted by a buried photodiode PD is transferred to an N-type floating diffusion layer FD so as to be fed out, as an image signal, via MOS transistors T3 and T4.

Abstract: A solid-state, two-dimensional image sensing device having a matrix of pixels each of which employs a photosensor that generates a photocurrent and a MOS circuit which outputs a signal proportional to the logarithm of the integral over time of the photocurrent. The sensor includes an integration control switching device so that all pixels in the array have equal integration time. The sensor integrates the signal for each pixel for a period of time and stores the integrated signal in a pixel signal storage location. To read out the stored signal each pixel includes an amplifier to increase the signal during read out. The sensor further accumulates signal in either a MOS transistor pn-junction or a secondary pixel storage location during a time that the integrated pixel signal is being read out so that image information can be collected continuously even while the integrated pixel signal for each pixel is being read.

Abstract: A solid-state, two-dimensional image sensing device having a matrix of pixels each of which employs a photosensor that generates a photocurrent and a MOS circuit which outputs a signal proportional to the logarithm of the integral over time of the photocurrent. The sensor includes an integration control switching device so that all pixels in the array have equal integration time. The sensor integrates the signal for each pixel for a period of time and stores the integrated signal in a pixel signal storage location. The sensor further accumulates signal in a MOS transistor pn-junction during a time that the integrated pixel signal is being read out so image information can be collected continuously even while the integrated pixel signal for each pixel is being read.

Abstract: A solid-state, two-dimensional image sensing device having a matrix of pixels each of which employs a photosensor that generates a photocurrent and a MOS circuit which outputs a signal proportional to the logarithm of the integral over time of the photocurrent. The sensor includes an integration control switching device so that all pixels in the array have equal integration time. The sensor integrates the signal for each pixel for a period of time and stores the integrated signal in a pixel signal storage location. To read out the stored signal each pixel includes an amplifier to increase the signal during read out. The sensor further accumulates signal in either a MOS transistor pn-junction or a secondary pixel storage location during a time that the integrated pixel signal is being read out so that image information can be collected continuously even while the integrated pixel signal for each pixel is being read.

Abstract: Each unit pixel has a photodiode PD, an amplifying MOS transistor T1 having its gate connected to the cathode of the photodiode PD, and a MOS transistor T2 having its source connected to the node between the photodiode PD and the gate of the MOS transistor T1. Forming only two MOS transistors other than a photodiode PD functioning as a photoelectric converter helps improve the open-area ratio.