Shigekazu Tomai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
Abstract: A sintered body for vacuum vapor deposition, the sintered body being a sintered body of an oxide containing at least one cation element; the cation element having an electronegativity of 1.5 or more; and the sintered body having a surface roughness of 3 ?m or less and a bulk resistance of less than 1×10?1 ?·cm.
Abstract: An amorphous transparent conductive film containing as a main component a six oxygen-coordinated metal oxide, and satisfying, in a radial distribution function (RDF) obtained by an X-ray scattering measurement, a relationship of A/B>1, providing that the maximum value of RDF at an interatomic distance of from 0.30 nm to 0.36 nm is A and the maximum value of RDF at an interatomic distance of from 0.36 nm to 0.42 nm is B.
March 7, 2006
October 8, 2009
Yukio Shimane, Kazuyoshi Inoue, Masato Matsubara, Nobuo Tanaka, Tokie Tanaka, Shigekazu Tomai, Koki Yano, Shigeo Matsuzaki
Abstract: A conductive composition film including the following elements A and B, and an oxygen atom: A: one element selected from In, Sn, and Zn; and B: one or more elements selected from In, Sn, Zn, V, W, Ni, Pd, Pt, Cu, Ag and Au and different from element A; the total (x+y) of the amount (x) of element A and the amount (y) of element B in the film being larger than 41 at % and smaller than 80 at %; and the amount of the oxygen atom in the film being [100?(x+y)] at %.
Abstract: A sputtering target which is formed of a sintered body including an oxide main components of which are In and Sm. A sputtering target in which a sintered body of an oxide including In and Sm as main components is doped with at least one element with an atomic valency of positive tetravalency or higher in an amount of 20 at. % or less relative to the total sum of all cation elements.
June 21, 2006
May 14, 2009
Kazuyoshi Inoue, Nobou Tanaka, Shigekazu Tomai, Masato Matsubara, Akira Kaijo, Koki Yano, Tokie Tanaka
Abstract: A fired material including at least one metal atom selected from indium, zinc and tin, at least one alkali metal atom selected from cesium, potassium and lithium, and an oxygen atom, wherein the atomic ratio (alkali metal atom)/(metal atom+alkali metal atom) is 0.1 to 80 at. %.
Abstract: An organic electroluminescent device (1) including: a transparent electrode (12); a counter electrode (14) opposite to the transparent electrode (12); and one or more multilayered structures between the transparent electrode (12) and the counter electrode (14), the structure including two organic emitting layers (20) and (22) and an intermediate conductive layer (30) between the organic emitting layers (20) and (22), the refractive index na of the intermediate conductive layer (30) being different from the refractive index nb of at least one of the organic emitting layers by 0.25 or less, the intermediate conductive layer (30) containing an oxide containing one or more types of rare earth elements.
Abstract: A conductive multilayer stack (10) which includes: a first layer (12) formed of a metal or transparent conductive material, and a second layer (14) provided on the first layer (12), which is formed of an oxide, carbide or nitride of at least one metal selected from the group consisting of indium, tin, zinc, aluminum, magnesium, silicon, titanium, vanadium, manganese, cobalt, nickel, copper, gallium, germanium, yttrium, zirconia, niobium, molybdenum, antimony, barium, hafnium, tantalum, tungsten, bismuth, lanthanum, cerium, praseodymium, neodymium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium and ytterbium, or carbon, wherein the second layer (14) has a work function larger than that of the first layer (12), and the second layer (14) had a film thickness of at least 0.5 nm and smaller than 50 nm.
Abstract: Provided are a semi-transmitting and semi-reflecting electrode substrate provided with a transparent conductive layer which is almost free from the generation of residues caused by etching and is resistant to an etchant for a metal reflecting layer (metal layer), a method of producing the semi-transmitting and semi-reflecting electrode substrate and a liquid crystal display device using the semi-transmitting and semi-reflecting electrode substrate.
Abstract: A transparent conductive film for constructing a transparent electrode that is free from the generation of residue, etc. by etching with a weak acid (for example, organic acid). Further, there is provided a sputtering target for producing the transparent conductive film. In particular, there is provided a sputtering target composed of indium oxide and cerium oxide, characterized in that in the observation of crystal peaks by X-ray diffractometry, the presence of peaks ascribed to indium oxide and cerium oxide is observed, and that in the EPMA measurement, the diameter of cerium oxide particles dispersed in indium oxide is measured as being ?5 ?m. A transparent conductive film is formed by a sputtering technique with the use of this sputtering target. This transparent conductive film is substantially free from the generation of residue, etc. by etching with a weak acid (for example, organic acid).
Abstract: Provided are a thin film transistor substrate having a transparent electroconductive film in which residues and so on resulting etching are hardly generated; a process for producing the same; and a liquid crystal display using this thin film transistor substrate. A thin film transistor substrate, comprising a transparent substrate, a source electrode formed over the transparent substrate, a drain electrode formed over the transparent substrate, and a transparent pixel electrode formed over the transparent substrate, wherein the transparent pixel electrode is a transparent electroconductive film which is made mainly of indium oxide, and further comprises one or two or more oxides selected from tungsten oxide, molybdenum oxide, nickel oxide and niobium oxide, and the transparent pixel electrode is electrically connected to the source electrode or the drain electrode; a process for producing the same; and a liquid crystal display using this thin film transistor substrate.
Abstract: An organic electroluminescent device including a cathode 50, an anode 20, and an emitting layer interposed between the cathode 50 and the anode 20, at least a part of the anode 20 in contact with the emitting layer 40 containing at least one element selected from lanthanum, cerium, neodymium, samarium, and europium, and at least one element selected from chromium, tungsten, tantalum, niobium, silver, palladium, copper, nickel, cobalt, molybdenum, platinum, and silicon. Since holes are efficiently injected into the emitting layer from the anode, the drive voltage of the organic EL device can be decreased, whereby the lifetime of the organic EL device can be increased.