Abstract: An electro-optical device includes a first substrate, a second substrate, an adhesive agent between the first and second substrates, and an inorganic film. The adhesive agent has a first face stuck to the first substrate, a second face stuck to the second substrate, and a third face between the first and second faces. The inorganic film covers the third face on one side of the electro-optical device, a region of the first substrate between the first face and a side of the first substrate on the one side, and a region of the second substrate between the second face and a side of the second substrate on the one side. A distance between the first substrate and the second substrate is less than a distance between the first face and the side of the first substrate, and a distance between the second face and the side of the second substrate.

Abstract: A storage device includes a conductive layer, a plurality of electrode layers stacked on the conductive layer, a wiring above the plurality of electrode layers, an interlayer insulating film between the plurality of electrode layers and the wiring, a semiconductor film penetrating the plurality of electrode layers and the interlayer insulating film in a stacking direction of the plurality of electrode layers, a contact plug penetrating the interlayer insulating film in the stacking direction, and connected to each of the plurality of electrode layers, and a conductive film in the vicinity of the contact plug and penetrating at least one of the plurality of electrode layers in the stacking direction. The semiconductor film is electrically connected to the conductive layer and the wiring, and an entire upper end of the conductive film is covered by an insulating layer.

Abstract: To provide a liquid composition whereby a resin powder can be uniformly dispersed in a resin or the like without being scattered, and a method for producing a film, a laminate or the like by using the liquid composition. The liquid composition comprises a liquid medium and a resin powder dispersed in the liquid medium, and characterized in that the average particle size of the resin powder is from 0.3 to 6 ?m, the volume-based cumulative 90% diameter of the resin powder is at most 8 ?m, and the resin powder is a resin containing a fluorinated copolymer having a specific functional group. And, the method is a method for producing a film, a laminate or the like by using the liquid composition.

Abstract: According to one embodiment, a stacked body includes a plurality of conductive layers stacked with an insulator interposed. The stacked body includes a first stacked portion and a second stacked portion. The second stacked portion includes a plurality of terrace portions arranged in a staircase configuration with level differences in a first direction and a second direction. The second stacked portion includes a conductive portion and a spacer portion. The conductive portion is connected to the conductive layer and is provided in same layer as the conductive layer. The spacer portion is provided in same layer as the conductive layer and the conductive portion. The spacer portion is of a material different from the conductive portion.

Abstract: According to an embodiment, a semiconductor memory device comprises: a stacked body including control gate electrodes stacked upwardly of a substrate; a semiconductor layer facing the control gate electrodes; and a gate insulating layer provided between the control gate electrode and the semiconductor layer. The stacked body comprises: a first metal layer configuring the control gate electrode; a first barrier metal layer contacting an upper surface of this first metal layer; a first silicon nitride layer contacting an upper surface of this first barrier metal layer; a first inter-layer insulating layer contacting an upper surface of this first silicon nitride layer; a second barrier metal layer contacting a lower surface of the first metal layer; a second silicon nitride layer contacting a lower surface of this second barrier metal layer; and a second inter-layer insulating layer contacting a lower surface of this second silicon nitride layer.

Abstract: A semiconductor memory device includes an interconnect layer including a conductive layer and a semiconductor layer of a first conductivity type provided on the conductive layer; a stacked body including a plurality of electrode layers stacked on the interconnect layer, a semiconductor pillar provided in the stacked body and extending through the plurality of electrode layers in a stacking direction thereof; and an insulating layer provided on the interconnect layer and extending along a lateral surface of the stacked body. The semiconductor layer includes a first semiconductor region of a second conductivity type positioned between the insulating layer and the conductive layer, and the first semiconductor region is in contact with the conductive layer.

Abstract: To provide a method for producing a tetrafluoroethylene copolymer-containing aqueous dispersion excellent in stability against a mechanical stress.

Abstract: To provide a polytetrafluoroethylene aqueous dispersion which is excellent in mechanical stability, while being not susceptible to foaming. The polytetrafluoroethylene aqueous dispersion comprises: 15 to 70 mass % of polytetrafluoroethylene particles having an average primary particle size of 0.1 to 0.5 ?m; 0.1 to 20,000 ppm, to the mass of the polytetrafluoroethylene particles, of a fluorinated emulsifier selected from C4-7 fluorinated carboxylic acids which may have an ether oxygen atom, and salts thereof; 1 to 20 parts by mass, per 100 parts by mass of the PTFE particles, of a nonionic surfactant represented by R1—O-A-H (wherein R1 is a C8-18 alkyl group, and A is a polyoxyalkylene chain); 0.01 to 3.0 parts by mass, per 100 parts by mass of the polytetrafluoroethylene particles, of a compound represented by the formula (2) (wherein R is a C2-4 alkyl group, n is 1 or 2, and each of m1 and m2 is an average repeating number of oxyethylene groups, with (m1+m2) being 1 to 6); and water.

Abstract: A semiconductor memory device includes an interconnect layer including a conductive layer and a semiconductor layer of a first conductivity type provided on the conductive layer; a stacked body including a plurality of electrode layers stacked on the interconnect layer, a semiconductor pillar provided in the stacked body and extending through the plurality of electrode layers in a stacking direction thereof; and an insulating layer provided on the interconnect layer and extending along a lateral surface of the stacked body. The semiconductor layer includes a first semiconductor region of a second conductivity type positioned between the insulating layer and the conductive layer, and the first semiconductor region is in contact with the conductive layer.

Abstract: An electro-optical device includes a first substrate, a second substrate, an adhesive agent between the first and second substrates, and an inorganic film. The adhesive agent has a first face stuck to the first substrate, a second face stuck to the second substrate, and a third face between the first and second faces. The inorganic film covers the third face on one side of the electro-optical device, a region of the first substrate between the first face and a side of the first substrate on the one side, and a region of the second substrate between the second face and a side of the second substrate on the one side. A distance between the first substrate and the second substrate is less than a distance between the first face and the side of the first substrate, and a distance between the second face and the side of the second substrate.

Abstract: A fluororesin excellent in radiation resistance is provided. A fluororesin composed of a tetrafluoroethylene/ethylene copolymer which is a bipolymer of tetrafluoroethylene and ethylene containing units derived from tetrafluoroethylene in a proportion of from 50 to 60 mol % relative to the total of the units derived from tetrafluoroethylene and units derived from ethylene, wherein the melt flow rate measured at a temperature of 297° C. under a load of 49 N in accordance with ASTM D3159 is 0.1 g/10 min or less.

Abstract: To provide a modified polytetrafluoroethylene which is excellent in the moldability by paste extrusion and the mechanical property of the molded article. A modified polytetrafluoroethylene fine powder which is a fine powder of a non-melt-moldable modified polytetrafluoroethylene, characterized in that the modified polytetrafluoroethylene comprises units derived from tetrafluoroethylene, units derived from a perfluoroalkyl vinyl ether represented by CF2?CFO—CnF2n+1 (wherein n is an integer of from 1 to 6), and units derived from a perfluoroalkylethylene represented by CH2?CH—CmF2m+1 (wherein m is an integer of from 3 to 6), and that the content of the units derived from the perfluoroalkyl vinyl ether is from 0.1 to 0.25 mass % and the content of the units derived from a perfluoroalkylethylene is from 0.001 to 0.1 mass %, based on all monomer units in the modified polytetrafluoroethylene.

Abstract: An electro-optical device comprises an element substrate, a counter substrate, and an inorganic film. The counter substrate is arranged so as to face the element substrate. The seal material is arranged between the element substrate and the counter substrate so as to join the element substrate and the counter substrate. The inorganic film covers a side face of the seal material, a peripheral region of the element substrate between the side face of the seal material and a side of the element substrate, and a peripheral region of the counter substrate between the side face of the seal material and a side of the counter substrate.

Abstract: To provide a production method for an aqueous emulsion of modified polytetrafluoroethylene which is environmentally friendly and which is suitable for producing a stretched porous body having excellent breaking strength. A production method for an aqueous emulsion of modified polytetrafluoroethylene, which is a method to obtain an aqueous emulsion of modified polytetrafluoroethylene particles having an average primary particle diameter of from 0.10 to 0.30 ?m, by subjecting tetrafluoroethylene and a perfluoroalkyl ethylene to emulsion polymerization in an aqueous medium, using a polymerization initiator, in the presence of a fluorinated anionic surfactant having a LogPOW of from 2.4 to 3.

Abstract: According to an embodiment, a semiconductor memory device comprises a substrate, a plurality of first conductive layers, a memory columnar body, a first semiconductor layer, a second semiconductor layer and a contact. The plurality of first conductive layers are stacked upwardly of the substrate. The memory columnar body extends in a first direction intersecting an upper surface of the substrate and a side surface of the memory columnar body is covered by the first conductive layers. The first semiconductor layer is connected to a lower end of the memory columnar body and extends in a second direction intersecting the first direction. The second conductive layer is provided between the first semiconductor layer and the first conductive layers. The second conductive layer is connected to the memory columnar body and extending in the second direction. The contact is connected to the second conductive layer and extends in the first direction.

Abstract: To optimize the primary particle size of a modified PTFE fine powder to shorten the sintering time during the extrusion molding. A modified polytetrafluoroethylene fine powder which is a fine powder of a non-melt-processable modified polytetrafluoroethylene comprising units derived from tetrafluoroethylene, units derived from hexafluoropropylene, units derived from a perfluoro(alkyl vinyl ether) represented by CF2?CFO—CnF2n+1 (n is an integer of from 1 to 6) and units derived from a (perfluoalkyl)ethylene represented by CH2?CH—CmF2m+1 (m is an integer of from 3 to 7).

Abstract: A semiconductor memory device according to an embodiment includes a first semiconductor layer containing an acceptor and a memory cell array including an interlayer insulating layer and a conductive layer arranged in a first direction above the first semiconductor layer and a memory columnar body extending in the first direction and having a lower end positioned lower than a position of a top surface of the first semiconductor layer, the memory columnar body containing a second semiconductor layer in a columnar shape having a side face opposite to a side face of the conductive layer, wherein a first portion of the first semiconductor layer in contact with the side face of the memory columnar body contains a donor in a higher concentration than a second portion different from the first portion of the first semiconductor substrate.

Abstract: According to an embodiment, a semiconductor memory device includes a plurality of first conductive layers disposed above a substrate in a laminating direction. A stepped wiring area includes a second conductive layer electrically connected to the first conductive layer. The second conductive layer has an end portion as a contact connection portion. A contact plug is connected to the contact connection portion. The contact plug extends in the laminating direction. The contact plug includes a first member and a second member. The first member extends in the laminating direction. The second member extends in a direction intersecting with the laminating direction inside the contact connection portion.

Abstract: A semiconductor memory device includes a control circuit configured to apply a first voltage to a selected first line, apply a second voltage to a selected second line, and apply a third voltage and a fourth voltage to a non-selected first line and a non-selected second line in a setting operation, respectively. The control circuit includes a detection circuit configured to detect a transition of a resistance state of a selected memory cell using a reference voltage. The control circuit is configured to execute a read operation in which the control circuit applies the third voltage to the selected first line and the non-selected first line, applies the second voltage to the selected second line, and applies the fourth voltage to the non-selected second line, and set the reference voltage based on a voltage value of the selected second line.

Abstract: Three directions intersecting each other are referred to as first to third directions. A semiconductor memory device according to embodiments includes a semiconductor substrate having a top surface spread in the first and second directions, and a plurality of conductive layers laminated at predetermined intervals in the third direction on the semiconductor substrate. The semiconductor memory device further includes a columnar semiconductor layer having an interface that is in contact with the semiconductor substrate on a side surface. The columnar semiconductor layer is opposed to the plurality of conductive layers. The columnar semiconductor layer has the third direction as a lengthwise direction. The interface exists in a position deeper than the top surface of the semiconductor substrate in the third direction.