Abstract: Motion picture data used in both of analog and digital broadcasts is provided with high picture display quality and a common user interface. Such display of motion picture data can be achieved by providing a plurality of picture format converting means, a plurality of OSD means and means for taking motion picture data used in an analog broadcast in a common memory.

Abstract: An object of the present application is to provide the display of motion picture data used in both of analog and digital broadcasts with high picture quality and a common user interface. The above object can be achieved by providing a plurality of picture format converters, a plurality of OSD circuits, and means for storing motion picture data used in an analog broadcast in a common memory.

Abstract: The object of the present invention is to provide a fire extinguishing agent that can extinguish fire and check the spread of fire by easily containing water therein by means of heat due to the fire and solidifying thereby adhering to a burning object; a fire extinguishing water and a method for extinguishing fire by using it. Concretely, the present invention relates to a fire extinguishing agent comprising a thermosensitive polymer that is water-soluble at a temperature not more than a specific preset temperature and that gels or solidifies by containing water therein by means of heat due to a fire which attains to a temperature not less than the preset temperature; a fire extinguishing water obtained by dissolving the fire extinguishing agent into water optionally with a flameproofing agent or other fire extinguishing fire agent; and a method for extinguishing fire using the fire extinguishing water.

Abstract: An object of the present application is to provide the display of motion picture data used in both of analog and digital broadcasts with high picture quality and a common user interface. The above object can be achieved by providing a plurality of picture format converters, a plurality of OSD circuits, and means for storing motion picture data used in an analog broadcast in a common memory.

Abstract: An object of the present application is to provide the display of motion picture data used in both of analog and digital broadcasts with high picture quality and a common user interface. The above object can be achieved by providing a plurality of picture format converters, a plurality of OSD circuits, and means for storing motion picture data used in an analog broadcast in a common memory.

Abstract: An object of the present application is to provide the display of motion picture data used in both of analog and digital broadcasts with high picture quality and a common user interface. The above object can be achieved by providing a plurality of picture format converters, a plurality of OSD circuits, and means for storing motion picture data used in an analog broadcast in a common memory.

Abstract: An object of the present application is to provide the display of motion picture data used in both of analog and digital broadcasts with high picture quality and a common user interface. The above object can be achieved by providing a plurality of picture format converting means, a plurality of OSD means and means for taking motion picture data used in an analog broadcast in a common memory.

Abstract: A base region is formed at a shallow junction and an impurity region of higher impurity concentration is formed, by a separate step, as a buried layer at a predetermined distance from the surface of a semiconductor substrate. By so doing, a bipolar diode is implemented which does not involve an increase in a base resistance even if conduction is effected over a longer period of time.

Abstract: An image synthesizing apparatus for synthesizing first and second images with each other which includes a first display memory for storing a first image data constituting a first image, and a display memory control device for comparing a second image data for constituting a second image with a predetermined image data to thereby judge whether the second image data is to be written into the first display memory or not.

Abstract: A dental implant comprises a Y-shaped body including three planar legs which have respective openings defined centrally in sides thereof and extend radially as viewed from above, and a head supported on the body and adapted to be capped by an artificial tooth. The three legs which extend radially outwardly allow the body to be firmly anchored in an alveolar bone of the patient. After the body has been embedded in a groove defined in the alveolar bone, the alveolar bone grows and is joined together through the openings in the legs. As a result, the embedded body becomes more and more secure with time.

Abstract: A frame buffer memory capable of storing video data for plural frames of pictures with memory areas irrelevant to the display being reduced to a minimum, which video data consist of a number of pixels unequal to a power of "2" in the vertical and horizontal directions, respectively. The frame buffer memory is realized by using multi-port video RAMs and includes a plurality of regions for display and auxiliary regions. The regions for display includes at least first and second display regions which partially overlap each other. The auxiliary regions store the video data contained in the overlapping portion (overlapping region) of the first and second display regions, the video data stored in the auxiliary region being transferred to the overlapping region as occasion requires.

Abstract: A semiconductor device comprising a semiconductor substrate with at least one semiconductor region formed in it, a polycrystalline silicon layer formed in contact with the semiconductor region and a metal layer formed on the polycrystalline silicon layer. The peripheral portion and outer edges of the polycrystalline silicon layer are covered with an insulation layer.

Abstract: In an NPN transistor, a contact base region, an active base region, and a further base region are formed in the silicon substrate. The further base region is between the contact base region and the active base region, and is adjacent to the contact base region and the active base region. The further base region has a depth shallower than that of the contact base region and deeper than that of the active base region. In the method of forming the bipolar transistor, a polysilicon semiconductor layer is formed on a semiconductor substrate. The polysilicon semiconductor layer is partially etched to form a base leading electrode and an emitter leading electrode. A semiconductor impurity is implanted into a base forming region of the silicon substrate via that portion where the polysilicon semiconductor layer is removed.

Abstract: The method of manufacturing a semiconductor device according to the present invention comprises the step of forming an opening in use for forming an emitter region. This step uses the independent etching characteristics of N and P type polysilicons to simplify the opening forming process, which is very complicated in the conventional method. To be more specific, the impurity doped in the first polysilicon layer at a high concentration is diffused into the second polysilicon layer adjacent to the first polysilicon layer. When the impurity doped in the first polysilicon layer is diffused into the second polysilicon layer, the diffused impurity dominantly determines the conductivity type of that portion of the second polysilicon layer, into which the impurity is diffused. Therefore, one of the first polysilicon layer and the second polysilicon layer portion is etched by a solution, independently of the other.

Abstract: An n.sup.+ -type buried layer is formed in the surface region of a p-type semiconductor substrate. Isulating films are formed on the semiconductor substrate. The insulating films have openings located above the buried layer. An n-type monocrystalline silicon layer is formed in one opening located above the buried layer. A base region is formed in the monocrystalline silicon layer. The base region defines a remaining portion of the monocrystalline silicon layer as a collector region. An emitter region is formed in the base region. A polycrystalline silicon layer is buried in the insulating films to have ohmic contact with the base region and serve as a portion of a base connection region. The polycrystalline silicon layer contains a p-type impurity and serves as an impurity diffusion source for the formation of an external base of the base region. An MoSi.sub.

Abstract: A dental implant includes a wavy or tortuous body. The body with a tortuous cross section has ridges extending from an upper end to a lower end. The dental implant also has a head supported on the upper end of the body and adapted to fit into an artificial tooth.

Abstract: The invention provides a method for making a semiconductor device including a bipolar transistor and a capacitor. An oxide film and a silicon nitride film are formed and patterned on a semiconductor substrate. A layer of polycrystalline silicon or of metal silicide containing an impurity is formed between an emitter electrode and an emitter region of the transistor and between an electrode and a thin oxide film of the capacitor. The doped polycrystalline silicon or metal silicide is then patterned to form a barrier layer protecting the oxide film and an intermediate layer acting as a diffusion source to the underlying substrate.

Abstract: An n-type buried layer is selectively formed in a surface region of a p-type semiconductor substrate. At least one insulating film is formed on the semiconductor substrate. A first opening is formed on the buried layer in the insulating film. An n-type polycrystalline silicon layer is formed in the first opening connected to the buried layer. A second opening is formed on the buried layer of the insulating film. An n-type monocrystalline silicon layer is formed in the second opening connected to the buried layer. A p-type base region is formed in the monocrystalline silicon layer and a collector region is formed in the remaining portion of the monocrystalline silicon layer. An emitter region is selectively formed in the base region.

Abstract: Semiconductor body is prepared and a film is formed on the semiconductor body, followed by forming an interconnection layer of aluminum alloy on the insulating film. A silicon oxide film is formed on the interconnection layer, followed by removing that portion of the silicon oxide film which is situated on a predetermined trimming area of the interconnection layer. A silicon nitride film is formed on the whole surface of the resultant structure. An energy beam is directed onto the predetermined trimming area of the interconnection layer, causing the interconnection layer to be locally heated to 400.degree. to 600.degree. C. whereby atoms in the interconnection layer migrate to permit the interconnection layer to be trimmed.

Abstract: There is provided a display control circuit including a central processing unit and display memory elements provided corresponding to respective data lines of the central processing unit. The display memory elements respectively have a plurality of data input terminals supplied with bit orders beforehand. As the display memory element, a large capacity readable/writable memory having a bit width per address such as 4 or 8 is used.Each bit per one address of said display memory element is assigned to an element belonging to each plane in the depth direction which constituted an individual picture element on the display screen. And one picture element is represented by one address of one display memory element. As a result, the number of display memory elements can be decreased.