Abstract: A substrate processing device includes a reactor equipped with a substrate holder and a gas feed electrode facing the substrate holder, a pump mechanism for pumping out an interior of the reactor, a reaction gas feed mechanism for introducing a reaction gas through the gas feed electrode into the interior of said reactor, a high frequency power source for applying a high frequency power to said gas feed electrode, a connecting port formed in a sidewall of said reactor, the pump mechanism is connected to the connecting port formed in the sidewall of the reactor, and a space between the gas feed electrode and the substrate holder is set so that a conductance between the gas feed electrode and the substrate holder is lower than a conductance between the sidewall of the reactor and the gas feed electrode.

Abstract: A method of processing a substrate has the following processes. After depositing a thin film onto a substrate by a CVD method, the front surface of the substrate is brought close to a gas supply surface of a gas supply mechanism to have a desired interval without making contact between the front surface and the gas supply surface. Afterwards, an etching gas is supplied into a back space of the substrate to generate plasma there, and further a purge gas is also supplied into a space between the gas supply surface and the substrate so that the purge gas flows into the back space through a peripheral-edge region of the substrate. This purge gas prevents radicals included in the plasma from diffusing into the space between the gas supply surface and the substrate.

Abstract: A method of depositing a thin film on a substrate by plasma-enhanced CVD is provided. The method includes introducing H.sub.2 or H.sub.2 and N.sub.2 into a plasma-enhanced CVD reactor; generating a plasma in the reactor; introducing a reaction gas comprising TiCl.sub.4, silane, and either H.sub.2 or H.sub.2 and N.sub.2 into the reactor; and depositing a Ti film or a TiN film containing Si on a substrate in the reactor.

Abstract: An electrode unit of a thermal CVD apparatus is used to generate plasma discharge for an in-situ cleaning process. The electrode unit is configured by a substrate holder and a shield member connected to a high frequency power supply, the gas supply section electrically grounded, and an auxiliary electrode disposed in the gas supply section. In a film deposition process, a reactive gas is supplied from the gas supply section, and the reactive gas is excited in a space in front of a substrate to deposit a thin film onto the substrate. In a periodical in-situ cleaning process, a cleaning gas is supplied from the gas supply section and a cleaning discharge is generated to remove unwanted films deposited on the substrate holder and the shield member. The auxiliary electrode causes the cleaning discharge to be concentrated in a space around unwanted films.

Abstract: A W film having good surface morphology and high reflectance is formed while avoiding any degradation of the characteristics such as specific resistivity. The method for forming a thin film is carried out by depositing a W film on a heated substrate using CVD. The raw material gas is WF.sub.6, and the reducing gases are SiH.sub.4 and H.sub.2. In the first stage of the film formation, the reaction between WF.sub.6 and SiH.sub.4 forms nuclei on the surface of the substrate. In the second stage, following the first stage, the reaction between WF.sub.6 and H.sub.2 forms the W film. The second stage is controlled to form crystal grains of a predetermined size. The first stage and the second stage are alternately repeated as many times as necessary.

Abstract: A heater is used in a CVD apparatus. In the CVD apparatus, reactive gas is supplied through a reactive gas supply plate to a substrate on a substrate holder to deposit a film on the substrate, and a purge gas supply passage is formed by placing a shield mechanism around the substrate holder, the shield mechanism including a ring plate disposed close to the outer periphery of the substrate. During film deposition, purge gas supplied through the purge gas supply passage is blown off from a clearance between the substrate and the ring plate, thereby preventing a film from being deposited on the rear surface of the substrate or the like. A heating element is arranged in a space in the purge gas supply passage close to but not contacting the substrate holder. The heating element is preferably a ceramic heater.

Abstract: A process for forming a thin film by chemical vapor deposition which comprises repeating a substrate processing step on one or more substrates placed inside a reaction chamber by introducing a reaction gas inside the reaction chamber. The process includes a step of introducing a passivation gas or the like for passivating the surface of a thin film deposited on the fixing jig or other peripheral members between substrate processing steps. The passivation gas is, for example, an adsorbent gas or an oxidizing gas. More specifically, an example of an adsorbent gas is a mixture of an inert gas and from 0.1 to 10% of NH.sub.3 gas or SiH.sub.2 Cl.sub.2 gas, and an example of an oxidizing gas is a mixture of an inert gas and at least one selected from the group of oxygen, nitrogen, monoxide, and nitrogen dioxide. The inert gas may also be replaced with N.sub.2 gas.

Abstract: A CVD mechanism includes a reactor, a substrate holder, a heating apparatus for heating the substrate holder, a reaction gas supply plate for supplying reaction gas into the reactor, and at least two cylinders disposed in a concentric form on the substrate-facing surface of the reaction gas supply plate so that reaction gas is supplied from an inward portion of each cylinder in the reaction gas supply plate. A power supply mechanism for supplying power to the reaction gas supply plate and the substrate holder, and ring magnets disposed in the upper and lower portions of the reactor are provided so that magnetic lines of force passing through a plasma space are generated by the facing magnetic pole parts of the respective magnets.

Abstract: A CVD apparatus is equipped with a reactor, a substrate holder, an evacuation section, a reactive gas supply mechanism, a heating mechanism for heating the substrate holder, a differential pressure chuck clamping section for clamping the substrate, and a purge gas supply mechanism for supplying purge gas. The substrate holder is configured to have a circular purge gas blowing channel on the top surface thereof, in which a diameter of an outside wall-surface is less than a diameter of the substrate, and a plurality of purge gas passages in an inside thereof, each of which supplies the purge gas into the purge gas blowing channel. The purge gas passing the purge gas blowing channel is blown off through a clearance between the outer periphery of the substrate and the substrate holder. The purge gas passage includes a radius-directed part directed in a radius direction of the substrate holder and has a purge gas outlet provided on the outside wall-surface of the purge gas blowing channel.

Abstract: In a CVD processing system for depositing a blanket tungsten film, a distinct shadow is formed without causing any micro-peeling when the substrate fixture is separated from the substrate so as to prevent any blanket tungsten from being deposited on SiO.sub.2, thus reducing the occurrence of fine dust particles.

Abstract: In a CVD processing system for depositing a blanket tungsten film, a distinct shadow is formed without causing any micro-peeling when the substrate fixture is separated from the substrate so as to prevent any blanket tungsten from being deposited on SiO.sub.2, thus reducing the occurrence of fine dust particles.

Abstract: In a CVD processing system for depositing a blanket tungsten film, a distinct shadow is formed without causing any micro-peeling when the substrate fixture is separated from the substrate so as to prevent any blanket tungsten from being deposited on SiO.sub.2, thus reducing the occurrence of fine dust particles.

Abstract: A method of fabricating a semiconductor substrate is characterized in that a semiconductor wafer is disposed between a pair of opposite electrodes provided in an atmosphere of inert gas containing impurity gas which is held at a low pressure, a low-frequency alternating current is applied between the electrodes to induce plasma, and impurity ions are implanted into the surface of the semiconductor wafer to form a very shallow impurity diffusion layer.

Abstract: A hot melt ink jet apparatus is disclosed which heats a normally solid ink into a molten state and then ejects the molten ink toward a printing sheet. When printing is performed on the printing sheet, the ink ejected onto the printing sheet quickly solidifies. After the printing operation, the printed sheet is fed between a supporting member and a pressing member. An intervention member is provided between the printed sheet and pressing member. The intervention member includes a layer which has a low cohesiveness and is softer than lumps of solidified ink on the printing sheet.

Abstract: A low pressure vapor phase growth apparatus is disclosed. The apparatus comprises a window made of a light-transmissive material, a gas feeder for feeding a reactive gas, an exhauster for pumping gases out after a chemical reaction, a lamp for effecting radiant heating of a substrate with a radiation emitted therefrom and transmitted through said light-transmissive window, and a cooling mechanism for forcibly cooling said light-transmissive window. The substrate and the light-transmissive window are maintained in no mutual contact with a gap therebetween having a width of at most the mean free path of a gas existing in the gap. The reactive gas fed through the gas feeder undergoes the chemical reaction on the obverse surface of the substrate to form a thin film thereon.

Abstract: An electrophotographic printer having a movable image developing device for forming a visible image on a photosensitive sheet. The printer contains a sheet handling unit having a light receiving portion for feeding the photosensitive sheet to the light receiving portion and for discharging the same therefrom; an exposure unit containing a cathode ray tube which projects its displaying image onto the photosensitive sheet when the sheet is at the light receiving portion so as to produce an electrostatic latent image on the sheet; and, the image developing device selectively movable between first and second positions, the developing device containing a developer for developing the electrostatic latent image into the visible image with the developer. A copying apparatus is also disclosed whose CRT in an exposure unit has a scrolling function. The copying apparatus also provides a control for controlling scrolling speed in synchronization with the feeding speed of the sheet.

Abstract: A flux-path forming member of a motor is prepared from a mixture mass by evenly mixing up to 4% of a thermosetting resin binder and molybdenum disulfide with at least 96% of a metal powder, fibrous metal, or a combination thereof; a second step of compacting in a mold under pressure the mixture mass into a desired shape; and a third step of heating, concurrently with or subsequently to the second step, the mixture mass to an elevated temperature to cure the binder portion thereof. The compact prepared by the above process is also disclosed. The content of the thermosetting resin at least 0.2 percent by weight, and the content of the molybdenum disulfide is at least 0.1 percent by weight. The curing operation is conducted at a temperature not higher than 300.degree. C.

Abstract: A print head adapted to be used for a dot-printer. A novel support device is disposed in the print head for pivotally supporting one end of each of a plurality of armatures on a support member. The support device in this invention comprises; (a) a leaf spring disposed longitudinally of the armature, secured at one end thereof to the support member and at the other end thereof to the armature, and provided in a middle portion thereof with a through-bore, and (b) a wire spring extending through the through-bore in the leaf spring at a right angle thereto, and secured at one end thereof to the support member and at the other end thereof to the armature.