Abstract: In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.

Abstract: A decorative sheet includes a base material and a concave portion. The concave portion is provided on a front face of the base material. In the concave portion, a depth direction coincides with a thickness direction of the base material. The concave portion includes a first concavo-convex pattern and a second concavo-convex pattern. The first concavo-convex pattern is provided in a first region of an inner surface of the concave portion. The second concavo-convex pattern is a concavo-convex pattern different from the first concavo-convex pattern. The second concavo-convex pattern is provided in a second region of the inner surface of the concave portion which is different from the first region.

Abstract: In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.

Abstract: A decorative sheet includes a base material and a plurality of concave portions. The plurality of concave portions are provided on a front face of the base material. In the concave portion, a depth direction coincides with a thickness direction of the base material. The plurality of concave portions includes a first concave portion and a second concave portion. The first concave portion includes a first concavo-convex pattern on a first inner surface of the first concave portion. The second concave portion does not include the first concavo-convex pattern on a second inner surface of the second concave portion.

Abstract: There is provided a metal contamination prevention method performed by passing a metal chloride gas through a metal component having a surface covered with an inactive film formed of a chromium oxide, the method including: generating a chromium chloride (III) hexahydrate by supplying a hydrochloric acid to the inactive film covering the surface of the metal component and allowing the chromium oxide to react with the hydrochloric acid; removing a chromium from the inactive film by evaporating the chromium chloride (III) hexahydrate; and covering a surface of the inactive film with a compound containing a metal contained in the metal chloride gas.

Abstract: In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.

Abstract: An embossing die is provided to an embossing apparatus. The embossing die is heated by a heating unit which is provided to the embossing apparatus. The embossing die includes a convex shaped mold portion. The mold portion corresponds to one concave portion formed on a front face of a base material. The mold portion is an aggregate of a plurality of protrusions which are divided by a slit. The slit is provided to an outer surface of the mold portion which contacts the front face of the base material. In the slit, a cutting direction corresponds to a height direction of the mold portion. The plurality of protrusions are adjacent to each other through the slit.

Abstract: In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.

Abstract: In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.

Abstract: A semiconductor device of an embodiment includes a main circuit configured to perform a predetermined operation to an input signal to output an output signal, an inverse operation circuit configured to receive the output signal of the main circuit as an input, and perform an inverse operation of the predetermined operation by using the output signal to output an inverse operation result signal, and a comparison circuit configured to compare the input signal and the inverse operation result signal, and output a predetermined signal when the input signal and the inverse operation result signal do not coincide with each other.

Abstract: In a decorative sheet, a base material has a concave portion on a front face. The concave portion includes a bottom surface. The bottom surface includes a first surface, a second surface and a third surface. A depth dimension of the first surface is a first value. The depth dimension is a dimension from the front face of the base material along a thickness direction of the base material. The depth dimension of the second surface is a second value which is smaller than the first value. The third surface is a surface which is connected with the first surface at a back side of the thickness direction, and is connected with the second surface at a front side of the thickness direction.

Abstract: A film forming apparatus includes: a substrate holding member for vertically holding target substrates at predetermined intervals in multiple stages; a process vessel for accommodating the substrate holding member; a processing gas introduction member each having gas discharge holes which discharge a processing gas for film formation in a direction parallel to each target substrate and introduce the processing gas into the process vessel; an exhaust mechanism for exhausting the interior of the process vessel; and a plurality of gas flow adjustment members installed to face the target substrates, respectively. Each of the gas flow adjustment members adjusts a gas flow of the processing gas discharged horizontally above each of the target substrates from the gas discharge holes of the processing gas introduction member, to be directed from above the respective target substrate located below the respective gas flow adjustment member toward the surface of the respective target substrate.

Abstract: A film forming method includes a step of disposing a substrate on which an insulating film is formed in a processing container and forming a base film by repeatedly supplying a Ti-containing gas, an Al-containing gas, and a reaction gas into the processing container under a decompressed atmosphere; and a step of forming a metal layer made of a metal material on the substrate on which the base film is formed.

Abstract: A decorative sheet includes a base material and a concave portion. The concave portion is provided on a front face of the base material. In the concave portion, a depth direction coincides with a thickness direction of the base material. The concave portion includes a first concavo-convex pattern and a second concavo-convex pattern. The first concavo-convex pattern is provided in a first region of an inner surface of the concave portion. The second concavo-convex pattern is a concavo-convex pattern different from the first concavo-convex pattern. The second concavo-convex pattern is provided in a second region of the inner surface of the concave portion which is different from the first region.

Abstract: A decorative sheet includes a base material and a plurality of concave portions. The plurality of concave portions are provided on a front face of the base material. In the concave portion, a depth direction coincides with a thickness direction of the base material. The plurality of concave portions includes a first concave portion and a second concave portion. The first concave portion includes a first concavo-convex pattern on a first inner surface of the first concave portion. The second concave portion does not include the first concavo-convex pattern on a second inner surface of the second concave portion.

Abstract: In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.

Abstract: In an embossing apparatus, an embossing die includes a concavo-convex shaped molding unit. The molding unit is in contact with a front face of a base material. An embossing receiving die includes an elastic unit made of resin. The elastic unit is in contact with a back face of the base material. In the molding unit, a height difference (?H) between a top portion of a convex portion and a bottom portion of a concave portion is a first value. In the elastic unit, a surface which forms an outer surface of the embossing receiving die is a smooth surface. In the elastic unit, a thickness (T) in a direction perpendicular to the outer surface of the embossing receiving die is a second value equal to or greater than the first value. The embossing die and the embossing receiving die sandwich the base material between the molding unit and the elastic unit.

Abstract: In a decorative sheet, a base material has a concave portion on a front face. The concave portion includes a bottom surface. The bottom surface includes a first surface, a second surface and a third surface. A depth dimension of the first surface is a first value. The depth dimension is a dimension from the front face of the base material along a thickness direction of the base material. The depth dimension of the second surface is a second value which is smaller than the first value. The third surface is a surface which is connected with the first surface at a back side of the thickness direction, and is connected with the second surface at a front side of the thickness direction.

Abstract: An embossing die is provided to an embossing apparatus. The embossing die is heated by a heating unit which is provided to the embossing apparatus. The embossing die includes a convex shaped mold portion. The mold portion corresponds to one concave portion formed on a front face of a base material. The mold portion is an aggregate of a plurality of protrusions which are divided by a slit. The slit is provided to an outer surface of the mold portion which contacts the front face of the base material. In the slit, a cutting direction corresponds to a height direction of the mold portion. The plurality of protrusions are adjacent to each other through the slit.

Abstract: A semiconductor device of an embodiment includes a main circuit configured to perform a predetermined operation to an input signal to output an output signal, an inverse operation circuit configured to receive the output signal of the main circuit as an input, and perform an inverse operation of the predetermined operation by using the output signal to output an inverse operation result signal, and a comparison circuit configured to compare the input signal and the inverse operation result signal, and output a predetermined signal when the input signal and the inverse operation result signal do not coincide with each other.