Abstract: The invention relates to a power transmission mechanism having a dog clutch for freely connecting and disconnecting power transmission between a first rotor and a second rotor on a common rotational shaft. The dog clutch has a plurality of dog jaws in one of the rotors and has, in the other rotor, a plurality of recess portions or other dog jaws to which the former dog jaws can be engaged. Taper surfaces are formed to an end face of each of the former dog jaws in the axial direction and each of wall surface portions formed between the recess portions or an end face of each of the latter dog jaws.

Abstract: It is an object of the present invention to provide a manufacturing method of a photoelectric conversion device in which no plane channeling is produced even if ions are injected at a certain elevation angle into a semiconductor substrate surface made of silicon. A manufacturing method of a photoelectric conversion device including a silicon substrate and a photoelectric conversion element on one principal plane of the silicon substrate, wherein the principal plane has an off-angle forming each angle ? with at least two planes perpendicular to a reference (1 0 0) plane within a range of 3.5°???4.5°, and an ion injecting direction for forming an semiconductor region constituting the photoelectric conversion element forms an angle ? to a direction perpendicular to the principal plane within a range of 0°<??45°, and further a direction of a projection of the ion injecting direction to the principal plane forms each angle ? with the two plane direction within a range of 0°<?<90°.

Abstract: It is an object of the present invention to provide a manufacturing method of a photoelectric conversion device in which no plane channeling is produced even if ions are injected at a certain elevation angle into a semiconductor substrate surface made of silicon. A manufacturing method of a photoelectric conversion device including a silicon substrate and a photoelectric conversion element on one principal plane of the silicon substrate, wherein the principal plane has an off-angle forming each angle ? with at least two planes perpendicular to a reference (1 0 0) plane within a range of 3.5°???4.5°, and an ion injecting direction for forming an semiconductor region constituting the photoelectric conversion element forms an angle ? to a direction perpendicular to the principal plane within a range of 0°<??45°, and further a direction of a projection of the ion injecting direction to the principal plane forms each angle ? with the two plane direction within a range of 0°<?<90°.

Abstract: A photoelectric conversion device includes photoelectric conversion elements and element isolation regions, both of which are arranged on a semiconductor substrate. The photoelectric conversion device further includes a plurality of interlayer insulation layers including a first interlayer insulation layer arranged nearest to the semiconductor substrate, and a second interlayer insulation layer arranged to cover the first interlayer insulation layer. Gaps extending from at least the second interlayer insulation layer to the first interlayer insulation layer are arranged in first and second interlayer insulation layer regions corresponding to the element isolation regions.

Abstract: A photoelectric-conversion apparatus includes a photoelectric-conversion area where a plurality of photoelectric-conversion elements configured to convert incident light into electrical charges, a plurality of floating-diffusion areas, a plurality of transfer-MOS transistors configured to transfer electrical charges of the photoelectric-conversion element to the floating-diffusion area, and a plurality of amplification-MOS transistors configured to read and transmit a signal generated based on the transferred electrical charges to an output line are provided. An antireflection film is provided on a light-receiving surface of the photoelectric-conversion element. The gate of the amplification-MOS transistor is electrically connected to one floating-diffusion area by providing one conductor in a single contact hole, and the anti-reflection film covers the photoelectric-conversion area except a base part of the contact hole.

Abstract: An eye disease treating agent and a method for treating an eye disease, which use a compound having an interleukin 6 production accelerating activity, are provided.

Abstract: A photoelectric-conversion apparatus includes a photoelectric-conversion area where a plurality of photoelectric-conversion elements configured to convert incident light into electrical charges, a plurality of floating-diffusion areas, a plurality of transfer-MOS transistors configured to transfer electrical charges of the photoelectric-conversion element to the floating-diffusion area, and a plurality of amplification-MOS transistors configured to read and transmit a signal generated based on the transferred electrical charges to an output line are provided. An antireflection film is provided on a light-receiving surface of the photoelectric-conversion element. The gate of the amplification-MOS transistor is electrically connected to one floating-diffusion area by providing one conductor in a single contact hole, and the anti-reflection film covers the photoelectric-conversion area except a base part of the contact hole.

Abstract: A semiconductor substrate for forming a pixel area provided surfacially with a plurality of pixels for photoelectric conversion, the semiconductor substrate, including a polysilicon film of a thickness of 0.5-2.0, on a rear surface of the pixel area-bearing surface, and having an oxygen concentration of 1.3-1.5E+18 atom/cm3 (old ASTM).

Abstract: A photoelectric conversion device is disclosed. The photoelectric conversion device includes a semiconductor substrate having a plurality of photoelectric converters, a multilayer wiring structure arranged on the semiconductor substrate, and a planarized layer arranged on the multilayer wiring structure. The multilayer wiring structure includes a first wiring layer, an interlayer insulation film arranged to cover the first wiring layer, and a second wiring layer serving as a top wiring layer arranged on the interlayer insulation film. The planarized layer covers the interlayer insulation film and the second wiring layer. The second wiring layer is thinner than the first wiring layer.

Abstract: A photoelectric-conversion apparatus includes a photoelectric-conversion area where a plurality of photoelectric-conversion elements configured to convert incident light into electrical charges, a plurality of floating-diffusion areas, a plurality of transfer-MOS transistors configured to transfer electrical charges of the photoelectric-conversion element to the floating-diffusion area, and a plurality of amplification-MOS transistors configured to read and transmit a signal generated based on the transferred electrical charges to an output line are provided. An antireflection film is provided on a light-receiving surface of the photoelectric-conversion element. The gate of the amplification-MOS transistor is electrically connected to one floating-diffusion area by providing one conductor in a single contact hole, and the anti-reflection film covers the photoelectric-conversion area except a base part of the contact hole.

Abstract: A noise generated by a constitution of widening an incident aperture of light of a photoelectric conversion element is reduced. In a manufacturing method of a photoelectric conversion device, first electroconductor arranged in a first hole arranged in the first interlayer insulation layer electrically connects a first semiconductor region to a gate electrode of an amplifying MOS transistor not through wirings included in a wiring layer. Moreover, a second electroconductor electrically connects a second semiconductor region different from the first semiconductor region to a wiring. In a constitution of that second electroconductor, a third electroconductor arranged in a second hole arranged in the first interlayer insulation layer and a fourth electroconductor arranged in a third hole arranged in the second interlayer insulation layer are stacked and electrically connected to each other.

Abstract: A photoelectric conversion device includes a photoelectric conversion region having a plurality of photoelectric conversion elements and a first MOS transistor configured to read a signal in response to an electric charge of each photoelectric conversion element; and a peripheral circuit region having a second MOS transistor configured to drive the first MOS transistor and/or amplify the signal read from the photoelectric conversion region, the photoelectric conversion region and the peripheral circuit region being located on the same semiconductor substrate, wherein an impurity concentration in a drain of the first MOS transistor is lower than an impurity concentration in a drain of the second MOS transistor.

Abstract: It is an object of the invention to provide a vision regeneration assisting apparatus capable of assisting in vision regeneration without making a system structure complicated. In the invention, a vision regeneration assisting apparatus for regenerating a vision of a patient going blind by a disease of a retina includes a photosensor embedded in the retina of an eye of the patient and converting an optical signal into an electric signal, photographing means for photographing an object to be recognized by the patient, image processing means for carrying out an image processing to extract a feature with respect to an image of the object obtained by the photographing means, pulse light forming means for forming a luminous flux into a pulse light to induce a vision, and irradiating means provided before the eye of the patient and applying the pulse light toward the photosensor so as to be formed as an image processed by the image processing means.

Abstract: The invention is to simplify a producing process for a solid-state image pickup device having pixels including MOS transistors, thereby improving productivity of the image pickup device. In a producing method for a solid-state image pickup device including pixels 100 each including a photoelectric conversion region 101 for generating photoelectrically a carrier and accumulating the carrier photoelectrically generated, a carrier accumulating portion 102 for accumulating a carrier overflowing from the photoelectric conversion region 101 in a period of carrier generation and accumulation thereof, and a MOS transistor Tx-MOS for transferring the carrier overflowing from the photoelectric conversion region 101, wherein a gate electrode of the MOS transistor Tx-MOS is formed in the same step as the step of forming a polysilicon film 118 constituting the first electroconductive film of the carrier accumulating portion 102.

Abstract: An object of the invention is to provide an intraocular implant-type vision stimulating unit which is capable of outputting a bipolar pulse signal in a simple constitution, and is highly sensitive, compact, and low power consumptive. In the invention, an intraocular implant-type vision stimulating unit for artificially generating the vision or a portion of the vision includes: a photoelectric conversion circuit for converting incoming light into an electrical signal; a pulse conversion circuit for converting the electrical signal outputted from the photoelectric conversion circuit into an electric pulse signal of a frequency corresponding to a magnitude thereof, and for outputting the same; a waveform shaping circuit for converting the pulse signal outputted from the pulse conversion circuit into a bipolar pulse signal, and for outputting the same; a power supply circuit for supplying electric power to each of the circuits, wherein the bipolar pulse signal is imparted to a retinal region through an electrode.

Abstract: An eye disease treating agent and a method for treating an eye disease, which use a compound having an interleukin 6 production accelerating activity, are provided.

Abstract: The invention is to simplify a producing process for a solid-state image pickup device having pixels including MOS transistors, thereby improving productivity of the image pickup device. In a producing method for a solid-state image pickup device including pixels 100 each including a photoelectric conversion region 101 for generating photoelectrically a carrier and accumulating the carrier photoelectrically generated, a carrier accumulating portion 102 for accumulating a carrier overflowing from the photoelectric conversion region 101 in a period of carrier generation and accumulation thereof, and a MOS transistor Tx-MOS for transferring the carrier overflowing from the photoelectric conversion region 101, wherein a gate electrode of the MOS transistor Tx-MOS is formed in the same step as the step of forming a polysilicon film 118 constituting the first electroconductive film of the carrier accumulating portion 102.

Abstract: It is an object of the present invention to provide a manufacturing method of a photoelectric conversion device in which no plane channeling is produced even if ions are injected at a certain elevation angle into a semiconductor substrate surface made of silicon. A manufacturing method of a photoelectric conversion device including a silicon substrate and a photoelectric conversion element on one principal plane of the silicon substrate, wherein the principal plane has an off-angle forming each angle ? with at least two planes perpendicular to a reference (100) plane within a range of 3.5°???4.5°, and an ion injecting direction for forming an semiconductor region constituting the photoelectric conversion element forms an angle ? to a direction perpendicular to the principal plane within a range of 0°<??45°, and further a direction of a projection of the ion injecting direction to the principal plane forms each angle ? with the two plane direction within a range of 0°<?<90°.

Abstract: A semiconductor substrate for forming a pixel area provided surfacially with a plurality of pixels for photoelectric conversion, the semiconductor substrate, including a polysilicon film of a thickness of 0.5-2.0, on a rear surface of the pixel area-bearing surface, and having an oxygen concentration of 1.3-1.5E+18 atom/cm3 (old ASTM).

Abstract: Disclosed is a structure which is able to supply oil to engagement parts of transmission gears mutually rotatably mounted on a transmission shaft inside a transmission case for a vehicle, even when the vehicle tilts during its run. The transmission shaft in the transmission case, has an oil passage which penetrates through its length axially and communicates with the engagement parts of the transmission gears fluidically, where the transmission shaft extends in a direction of width of the vehicle. Both ends of the oil passage of the transmission shaft fluidically communicate with oil intake passages which extend upwards and open inside the transmission case so as to capture the oil inside the transmission case.