Abstract: A substrate processing apparatus includes: a substrate holding member configured to hold a plurality of substrates; a reaction tube configured to accommodate the substrate holding member and process the substrates; a processing gas supply system configured to supply a processing gas into the reaction tube; and an exhaust system configured to exhaust an internal atmosphere of the reaction tube. The reaction tube includes: a cylindrical portion; a gas supply area formed outside one side wall of the cylindrical portion and connected to the processing gas supply system; and a gas exhaust area formed outside the other side wall of the cylindrical portion opposed to the gas supply area and connected to the exhaust system. Each of the gas supply area and the gas exhaust area has an inner wall which partitions the interior of each of the gas supply area and the gas exhaust area into a plurality of spaces.

Abstract: A substrate processing apparatus includes: a substrate holding member configured to hold a plurality of substrates; a reaction tube configured to accommodate the substrate holding member and process the substrates; a processing gas supply system configured to supply a processing gas into the reaction tube; and an exhaust system configured to exhaust an internal atmosphere of the reaction tube. The reaction tube includes: a cylindrical portion; a gas supply area formed outside one side wall of the cylindrical portion and connected to the processing gas supply system; and a gas exhaust area formed outside the other side wall of the cylindrical portion opposed to the gas supply area and connected to the exhaust system. Each of the gas supply area and the gas exhaust area has an inner wall which partitions the interior of each of the gas supply area and the gas exhaust area into a plurality of spaces.

Abstract: A substrate processing apparatus includes: a substrate holding member configured to hold a plurality of substrates; a reaction tube configured to accommodate the substrate holding member and process the substrates; a processing gas supply system configured to supply a processing gas into the reaction tube; and an exhaust system configured to exhaust an internal atmosphere of the reaction tube. The reaction tube includes: a cylindrical portion; a gas supply area formed outside one side wall of the cylindrical portion and connected to the processing gas supply system; and a gas exhaust area formed outside the other side wall of the cylindrical portion opposed to the gas supply area and connected to the exhaust system. Each of the gas supply area and the gas exhaust area has an inner wall which partitions the interior of each of the gas supply area and the gas exhaust area into a plurality of spaces.

Abstract: A substrate processing apparatus includes: a substrate holding member configured to hold a plurality of substrates; a reaction tube configured to accommodate the substrate holding member and process the substrates; a processing gas supply system configured to supply a processing gas into the reaction tube; and an exhaust system configured to exhaust an internal atmosphere of the reaction tube. The reaction tube includes: a cylindrical portion; a gas supply area formed outside one side wall of the cylindrical portion and connected to the processing gas supply system; and a gas exhaust area formed outside the other side wall of the cylindrical portion opposed to the gas supply area and connected to the exhaust system. Each of the gas supply area and the gas exhaust area has an inner wall which partitions the interior of each of the gas supply area and the gas exhaust area into a plurality of spaces.

Abstract: A substrate processing apparatus includes a process chamber and a transfer device configured to transfer a plurality of substrates to a substrate retainer. The transfer device includes a base; a first moving unit capable of linear motion; a first drive unit to drive the first moving unit. The first drive unit includes a first pulley group; a first motor coupled to a first pulley; and a first connecting member coupling the first belt and the first moving unit. A second moving unit is capable of linear motion. A second drive unit is in an enclosure of the first moving unit and drives the second moving unit. The second drive unit includes a second pulley group; a second belt wound on the second pulley group, a second motor coupled to drive a second pulley; and a second connecting member coupling the second belt and the second moving unit.

Abstract: An apparatus and method capable of reducing the footprint of substrate processing system. An apparatus includes a housing chamber including a housing cabinet which houses housing containers for housing substrates, and a housing container carrying mechanism provided on the ceiling of the housing chamber and configured to carry the housing containers.

Abstract: A substrate processing apparatus includes a process chamber and a transfer device configured to transfer a plurality of substrates to a substrate retainer. The transfer device includes a base; a first moving unit capable of linear motion; a first drive unit to drive the first moving unit. The first drive unit includes a first pulley group; a first motor coupled to a first pulley; and a first connecting member coupling the first belt and the first moving unit. A second moving unit is capable of linear motion. A second drive unit is in an enclosure of the first moving unit and drives the second moving unit. The second drive unit includes a second pulley group; a second belt wound on the second pulley group, a second motor coupled to drive a second pulley; and a second connecting member coupling the second belt and the second moving unit.

Abstract: A substrate processing apparatus includes: a substrate holding member configured to hold a plurality of substrates; a reaction tube configured to accommodate the substrate holding member and process the substrates; a processing gas supply system configured to supply a processing gas into the reaction tube; and an exhaust system configured to exhaust an internal atmosphere of the reaction tube. The reaction tube includes: a cylindrical portion; a gas supply area formed outside one side wall of the cylindrical portion and connected to the processing gas supply system; and a gas exhaust area formed outside the other side wall of the cylindrical portion opposed to the gas supply area and connected to the exhaust system. Each of the gas supply area and the gas exhaust area has an inner wall which partitions the interior of each of the gas supply area and the gas exhaust area into a plurality of spaces.

Abstract: There is provided a substrate processing apparatus including a first exhaust system which is connected to a first pump and a second pump of a type different from the first pump and is configured to exhaust the interior of a process chamber, a second exhaust system which is connected to the second pump and is configured to exhaust the interior of the process chamber and a control part configured to control the first exhaust system and the second exhaust system such that, when the processing gas is exhausted from the interior of the process chamber, the interior of the process chamber is first exhausted by the second exhaust system, and then an exhaust path is switched from the second exhaust system to the first exhaust system after an internal pressure of the process chamber reaches a predetermined pressure, to exhaust the process chamber by the first exhaust system.

Abstract: An apparatus and method capable of reducing the footprint of substrate processing system. An apparatus includes a housing chamber including a housing cabinet which houses housing containers for housing substrates, and a housing container carrying mechanism provided on the ceiling of the housing chamber and configured to carry the housing containers.

Abstract: An apparatus for fabricating a semiconductor device includes a reaction or process tube provided with at least one reinforcement member. The reinforcement member is attached to a body portion of the reaction tube and extends in a longitudinal direction of the reaction tube. A heater surrounds the reaction tube and a substrate loaded in the reaction tube is heat-treated by the heater.

Abstract: In a CVD apparatus in which a first boat and a second boat are used, the boat detection unit and the boat identifying detection unit of the boat detection device of boat identification means are installed on a waiting plate on which a transfer process is performed by the substrate transfer device with one boat mounted thereon. Two detected bodies corresponding to the boat detection unit and the boat identifying detection unit are projected on the first boat 21A and only one detected body corresponding to the boat detection unit is projected on the second boat. If two detected bodies are detected, the boat detection device determines the boat to be the first boat and, if only one detected body is detected, the boat detection device determines the boat to be the second boat.

Abstract: The present invention is constituted so as to improve a quartz gas supply portion utilized in a normal pressure furnace, and to keep to a minimum the damage incurred by a normal pressure furnace by the shock from an earthquake. Quartz gas supply piping 25 for supplying a reactant gas is connected to a quartz reaction tube 4, which constitutes a furnace body. A stress concentration portion 23 for concentrating stress by prioritizing another location when vibration occurs in a furnace body is formed on this gas supply piping 25. The stress concentration portion 23 is disposed on the side of a source-side gas supply pipe 8, which is in front of a pipe clamp 21 that connects the source-side gas supply pipe 8 to a reaction tube-side gas supply pipe 7 mounted to the reaction tube 4. As a stress concentration portion 23, the simplest of V-grooves can be formed in the circumferential direction.