Abstract: A sliding spline shaft device of the present invention includes a male spline and a female spline that is fitted to the male spline in an axially slidable manner, and at least one of the splines has a surface processed layer. The surface processed layer includes an undercoat layer, an intermediate layer containing phosphate, and a topcoat layer containing solid lubricant, in this order. The undercoat layer contains iron nitride and/or iron carbide. Thus, the surface of a base material has high hardness. As a result, microscopic deformation of the sliding surface is reduced, and increase in a real contact area is suppressed, whereby stick-slip is prevented.

Abstract: In an optical module (first module (1)), a plurality of semiconductor laser elements (a first semiconductor laser element (21) through a third semiconductor laser element (23)) that output light of wavelengths which are different from each other from light emitting points are mounted on a base member (10). The base member (10) has a reference surface (11) serving as a reference in a height direction (Z) and a mounting surface (a first mounting surface (12a) and a second mounting surface (12b)) on which the semiconductor laser elements are mounted. At least some of the plurality of semiconductor laser elements are different from each other in a height (a first light emission height (TL1) through a third light emission height (TL3)) from a surface in contact with the mounting surface to the light emitting points, and are substantially equal in a height (reference height (HL)) from the reference surface to the light emitting points.

Abstract: A semiconductor light-emitting device 10 includes a heat sink and a semiconductor light-emitting element mounted on the heat sink. A gap is provided between a region of a part of a base bottom surface of a base of the semiconductor light-emitting element and an upper surface of the heat sink, and a lead is disposed in a region where the gap is provided so as to vertically pass through the base. A semiconductor laser chip is provided in a region where the gap is not provided so that its waveguide longitudinal direction is substantially parallel to an upper surface of the base. The lead has its lower end located within the gap and connected to a flexible substrate.

Abstract: A semiconductor light-emitting device 10 includes a heat sink and a semiconductor light-emitting element mounted on the heat sink. A gap is provided between a region of a part of a base bottom surface of a base of the semiconductor light-emitting element and an upper surface of the heat sink, and a lead is disposed in a region where the gap is provided so as to vertically pass through the base. A semiconductor laser chip is provided in a region where the gap is not provided so that its waveguide longitudinal direction is substantially parallel to an upper surface of the base. The lead has its lower end located within the gap and connected to a flexible substrate.

Abstract: The present invention provides a light emitting device that makes it possible to provide an image display apparatus having a wide color reproduction range. The light emitting device includes a light emitting element that emits blue light; a Mn2+-activated ?-AlON phosphor that is a green phosphor; and a Mn4+-activated phosphor that is a red phosphor. The green light emitted by the Mn2+-activated ?-AlON phosphor has an emission-spectrum peak wavelength of not less than 518 nm and not more than 528 nm.

Abstract: A semiconductor light-emitting element includes: a base made of metal; a cap mounted on the base; a semiconductor laser chip mounted over an upper surface of the base; and a lead through which the semiconductor laser chip is supplied with electric power. The base has a notch provided in a region of a bottom surface thereof. The lead is disposed so as to extend vertically through the base in the region of the base where the notch is provided. The semiconductor laser chip is mounted over a region of the base that is free from the notch. An upper end of the lead and the semiconductor laser chip are housed in an internal space surrounded by the cap and the base.

Abstract: A group III nitride based laser light emitting device includes an n-side group III nitride based semiconductor region, a p-side group III nitride based semiconductor region, and a group III nitride based active region between the p-side group III nitride based semiconductor region and n-side group III nitride based semiconductor region. The group III nitride based active region includes first and second quantum well layers and a barrier layer between the first and second quantum well layers, the respective compositions of the first and second quantum well layers comprising different respective amounts of indium. The first quantum well is closer to the n-side group III nitride based semiconductor region than the second quantum well, the second quantum well is closer to the p-side group III nitride based semiconductor region than the first quantum well, and the first quantum well has a larger band gap than the second quantum well.

Abstract: A group III nitride based laser light emitting device includes an n-side group III nitride based semiconductor region, a p-side group III nitride based semiconductor region, and a group III nitride based active region between the p-side group III nitride based semiconductor region and n-side group III nitride based semiconductor region. The group III nitride based active region includes first and second quantum well layers and a barrier layer between the first and second quantum well layers, the respective compositions of the first and second quantum well layers comprising different respective amounts of indium. The first quantum well is closer to the n-side group III nitride based semiconductor region than the second quantum well, the second quantum well is closer to the p-side group III nitride based semiconductor region than the first quantum well, and the first quantum well has a larger band gap than the second quantum well.

Abstract: A nitride semiconductor light-emitting device includes a substrate which includes polycrystal silicon dioxide or amorphous silicon dioxide as a main component, an underlying layer that is provided on the substrate, and a multilayer structure that is provided on the underlying layer and includes at least one layer made of a nitride semiconductor single crystal. The underlying layer includes crystals oriented to a c-axis and is formed by sputtering.

Abstract: A semiconductor light-emitting device includes a first conductivity-type semiconductor including a first electrode on a first main surface, a second conductivity-type semiconductor, and an active layer between a second main surface of the first conductivity-type semiconductor and a first main surface of the second conductivity-type semiconductor. Protrusions are disposed in at least part of a region of a second main surface of the second conductivity-type semiconductor facing the first electrode. A second electrode is disposed in at least part of a region of the second main surface of the second conductivity-type semiconductor except the region having the protrusions. The protrusions containing a dielectric material protrude from the second main surface of the second conductivity-type semiconductor in a direction away from the active layer and are separated by intervals longer than the wavelength of light emitted from the active layer in the medium of the protrusions.

Abstract: A semiconductor light-emitting device includes a first conductivity-type semiconductor including a first electrode on a first main surface, a second conductivity-type semiconductor, and an active layer between a second main surface of the first conductivity-type semiconductor and a first main surface of the second conductivity-type semiconductor. Protrusions are disposed in at least part of a region of a second main surface of the second conductivity-type semiconductor facing the first electrode. A second electrode is disposed in at least part of a region of the second main surface of the second conductivity-type semiconductor except the region having the protrusions. The protrusions containing a dielectric material protrude from the second main surface of the second conductivity-type semiconductor in a direction away from the active layer and are separated by intervals longer than the wavelength of light emitted from the active layer in the medium of the protrusions.

Abstract: The present invention provides a light emitting device that makes it possible to provide an image display apparatus having a wide color reproduction range. The light emitting device includes a light emitting element that emits blue light; a Mn2+-activated ?-AlON phosphor that is a green phosphor; and a Mn4+-activated phosphor that is a red phosphor. The green light emitted by the Mn2+-activated ?-AlON phosphor has an emission-spectrum peak wavelength of not less than 518 nm and not more than 528 nm.

Abstract: A light projecting device of the present invention includes: a light source unit including (i) a laser element for emitting light, (ii) a light converging lens for converging the light emitted from the laser element, and (iii) a light emitting section for emitting light upon receipt of the light converged by the light converging lens; and a reflector for projecting light emitted from the light source unit. The light source unit is provided so as to be attached to or detached from a fixed part to which the light source unit is to be fixed.

Abstract: A nitride semiconductor light-emitting device includes a substrate which includes polycrystal silicon dioxide or amorphous silicon dioxide as a main component, an underlying layer that is provided on the substrate, and a multilayer structure that is provided on the underlying layer and includes at least one layer made of a nitride semiconductor single crystal. The underlying layer includes crystals oriented to a c-axis and is formed by sputtering.

Abstract: A method of producing a nitride semiconductor crystal uses a metal organic chemical vapor deposition process and offers good controllability with respect to a p-type nitride semiconductor crystal. To that end, an organic metal compound of a group III element, a hydride of nitrogen, and an organic compound having any of the partial structures C—C—O, C—C?O, C?C—O, C?C?O, C?C—O, and C—O—C are used as source materials, and by a metal organic chemical vapor deposition process, C and O atoms are simultaneously introduced into the crystal to obtain p-type conductivity.

Abstract: A light projecting device of the present invention includes: a light source unit including (i) a laser element for emitting light, (ii) a light converging lens for converging the light emitted from the laser element, and (iii) a light emitting section for emitting light upon receipt of the light converged by the light converging lens; and a reflector for projecting light emitted from the light source unit. The light source unit is provided so as to be attached to or detached from a fixed part to which the light source unit is to be fixed.

Abstract: A light projecting device of the present invention includes: a light source unit including (i) a laser element for emitting light, (ii) a light converging lens for converging the light emitted from the laser element, and (iii) a light emitting section for emitting light upon receipt of the light converged by the light converging lens; and a reflector for projecting light emitted from the light source unit. The light source unit is provided so as to be attached to or detached from a fixed part to which the light source unit is to be fixed.

Abstract: A light emitting device of the present invention includes: a laser diode group which generates a plurality of laser beams; a cylindrical light emitting element which emits incoherent light in response to the plurality of laser beams; and a light guide irradiation section which (i) guides the plurality of laser beams entered via a light incidence plane toward a light irradiation plane and (ii) irradiates the light irradiation area of the cylindrical light emitting element with the plurality of laser beams thus guided. The light irradiation plane of the light guide irradiation section has an area which is smaller than that of the light incidence plane.

Abstract: In a GaN-based laser device having a GaN-based semiconductor stacked-layered structure including a light emitting layer, the semiconductor stacked-layered structure includes a ridge stripe structure causing a stripe-shaped waveguide, and has side surfaces opposite to each other to sandwich the stripe-shaped waveguide in its width direction therebetween. At least part of at least one of the side surfaces is processed to prevent the stripe-shaped waveguide from functioning as a Fabry-Perot resonator in the width direction.

Abstract: A light emitting device of the present invention includes: an LD chip for emitting excitation light; a light emitting body for emitting fluorescence upon irradiation with the excitation light from the LD chip; and a mirror including a light reflecting concave surface for reflecting the fluorescence from the light emitting body, the light reflecting concave surface of the mirror having a through-hole at a region other than a bottom region in the vicinity of the bottom of the light reflecting concave surface, and a truncated pyramid light converging section being inserted into the through-hole in order to guide the excitation light from the LD chip to the light emitting body.