Patents by Inventor Shigeyuki Hamayoshi

Shigeyuki Hamayoshi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10669210
    Abstract: Provided is a large-sized silicon nitride sintered substrate and a method for producing the same. The silicon nitride sintered substrate has a main surface 101a of a shape larger than a square having a side of a length of 120 mm. A ratio dc/de of the density dc of the central area and the density de of the end area of the main surface 101a is 0.98 or higher. The void fraction vc of the central area of the main surface 101a is 1.80% or lower, and the void fraction ve of the end area is 1.00% or lower. It is preferred that the density dc of the central area is 3.120 g/cm3 or higher, the density de of the end area is 3.160 g/cm3 or higher, and a ratio ve/vc of the void fraction vc of the central area and the void fraction ve of the end area is 0.50 or higher.
    Type: Grant
    Filed: March 24, 2017
    Date of Patent: June 2, 2020
    Assignee: HITACHI METALS, LTD.
    Inventors: Hisayuki Imamura, Suguru Fujita, Youichirou Kaga, Hiroyuki Teshima, Shigeyuki Hamayoshi
  • Publication number: 20190031566
    Abstract: Provided is a large-sized silicon nitride sintered substrate and a method for producing the same. The silicon nitride sintered substrate has a main surface 101a of a shape larger than a square having a side of a length of 120 mm. A ratio dc/de of the density dc of the central area and the density de of the end area of the main surface 101a is 0.98 or higher. The void fraction vc of the central area of the main surface 101a is 1.80% or lower, and the void fraction ve of the end area is 1.00% or lower. It is preferred that the density dc of the central area is 3.120 g/cm3 or higher, the density de of the end area is 3.160 g/cm3 or higher, and a ratio ve/vc of the void fraction vc of the central area and the void fraction ve of the end area is 0.50 or higher.
    Type: Application
    Filed: March 24, 2017
    Publication date: January 31, 2019
    Applicant: Hitachi Metals, Ltd.
    Inventors: Hisayuki IMAMURA, Suguru FUJITA, Youichirou KAGA, Hiroyuki TESHIMA, Shigeyuki HAMAYOSHI
  • Patent number: 8210999
    Abstract: A roll for use in a galvanizing pot, comprising a hollow body brought into contact with a steel strip, and shaft portions connected to the body, at least the body being made of a silicon nitride ceramic having thermal conductivity of 50 W/(m·K) or more at room temperature, and the body having an average surface roughness Ra of 1-20 ?m. The body is preferably shrink-fit to the shaft portions.
    Type: Grant
    Filed: December 13, 2004
    Date of Patent: July 3, 2012
    Assignee: Hitachi Metals Ltd.
    Inventors: Shigeyuki Hamayoshi, Shingo Nogami, Shigetada Sugiyama
  • Publication number: 20070074657
    Abstract: A roll for use in a galvanizing pot, comprising a hollow body brought into contact with a steel strip, and shaft portions connected to the body, at least the body being made of a silicon nitride ceramic having thermal conductivity of 50 W/(m·K) or more at room temperature, and the body having an average surface roughness Ra of 1-20 ?m. The body is preferably shrink-fit to the shaft portions.
    Type: Application
    Filed: December 13, 2004
    Publication date: April 5, 2007
    Inventors: Shigeyuki Hamayoshi, Shingo Nogami, Shigetada Sugiyama
  • Patent number: 7031166
    Abstract: A silicon nitride sintered body comprising Mg and at least one rare earth element selected from the group consisting of La, Y, Gd and Yb, the total oxide-converted content of the above elements being 0.6–7 weight %, with Mg converted to MgO and rare earth elements converted to rare earth oxides RExOy. The silicon nitride sintered body is produced by mixing 1–50 parts by weight of a first silicon nitride powder having a ?-particle ratio of 30–100%, an oxygen content of 0.5 weight % or less, an average particle size of 0.2–10 ?m, and an aspect ratio of 10 or less, with 99–50 parts by weight of ?-silicon nitride powder having an average particle size of 0.2–4 ?m; and sintering the resultant mixture at a temperature of 1,800° C. or higher and pressure of 5 atm or more in a nitrogen atmosphere.
    Type: Grant
    Filed: November 30, 2004
    Date of Patent: April 18, 2006
    Assignee: Hitachi Metals, Ltd.
    Inventors: Hisayuki Imamura, Shigeyuki Hamayoshi, Tsunehiro Kawata, Masahisa Sobue
  • Publication number: 20050094381
    Abstract: A silicon nitride sintered body comprising Mg and at least one rare earth element selected from the group consisting of La, Y, Gd and Yb, the total oxide-converted content of the above elements being 0.6-7 weight %, with Mg converted to MgO and rare earth elements converted to rare earth oxides RExOy. The silicon nitride sintered body is produced by mixing 1-50 parts by weight of a first silicon nitride powder having a ?-particle ratio of 30-100%, an oxygen content of 0.5 weight % or less, an average particle size of 0.2-10 ?m, and an aspect ratio of 10 or less, with 99-50 parts by weight of ?-silicon nitride powder having an average particle size of 0.2-4 ?m; and sintering the resultant mixture at a temperature of 1,800° C. or higher and pressure of 5 atm or more in a nitrogen atmosphere.
    Type: Application
    Filed: November 30, 2004
    Publication date: May 5, 2005
    Inventors: Hisayuki Imamura, Shigeyuki Hamayoshi, Tsunehiro Kawata, Masahisa Sobue
  • Patent number: 6846765
    Abstract: A silicon nitride sintered body comprising Mg and at least one rare earth element selected from the group consisting of La, Y, Gd and Yb, the total oxide-converted content of the above elements being 0.6-7 weight %, with Mg converted to MgO and rare earth elements converted to rare earth oxides RExOy. The silicon nitride sintered body is produced by mixing 1-50 parts by weight of a first silicon nitride powder having a particle ratio of 30-100%, an oxygen content of 0.5 weight % or less, an average particle size of 0.2-10 ?m, and an aspect ratio of 10 or less, with 99?50 parts by weight of ?-silicon nitride powder having an average particle size of 0.2-4 ?m; and sintering the resultant mixture at a temperature of 1,800° C. or higher and pressure of 5 atm or more in a nitrogen atmosphere.
    Type: Grant
    Filed: September 20, 2001
    Date of Patent: January 25, 2005
    Assignee: Hitachi Metals, Ltd.
    Inventors: Hisayuki Imamura, Shigeyuki Hamayoshi, Tsunehiro Kawata, Masahisa Sobue
  • Publication number: 20020164475
    Abstract: A silicon nitride sintered body comprising Mg and at least one rare earth element selected from the group consisting of La, Y, Gd and Yb, the total oxide-converted content of the above elements being 0.6-7 weight %, with Mg converted to MgO and rare earth elements converted to rare earth oxides RExOy. The silicon nitride sintered body is produced by mixing 1-50 parts by weight of a first silicon nitride powder having a &bgr;-particle ratio of 30-100%, an oxygen content of 0.5 weight % or less, an average particle size of 0.2-10 &mgr;m, and an aspect ratio of 10 or less, with 99-50 parts by weight of &agr;-silicon nitride powder having an average particle size of 0.2-4 &mgr;m; and sintering the resultant mixture at a temperature of 1,800° C. or higher and pressure of 5 atm or more in a nitrogen atmosphere.
    Type: Application
    Filed: September 20, 2001
    Publication date: November 7, 2002
    Applicant: HITACHI METALS, LTD.
    Inventors: Hisayuki Imamura, Shigeyuki Hamayoshi, Tsunehiro Kawata, Masahisa Sobue
  • Patent number: 6077327
    Abstract: There is disclosed a method of producing an aluminum composite material in which the content of silicon carbide can be made higher as compared with conventional methods, and the production cost is low, and the method can be carried out easily. An aluminum composite material of low-thermal expansion and high-thermal conductivity is produced by this method. A mixture of powder of aluminum metal or an alloy thereof and silicon carbide powder is pressurized and compacted to form a green compact. Subsequently, this green compact is charged into a mold, and is heated and compacted into a predetermined shape at a temperature not less than a melting point of the aluminum metal or the alloy thereof.
    Type: Grant
    Filed: March 20, 1997
    Date of Patent: June 20, 2000
    Assignee: Hitachi Metals, Ltd.
    Inventors: Shigeyuki Hamayoshi, Satoshi Fukui, Kenichiro Shimizu, Masahiko Ohshima