Abstract: An epitaxial substrate includes: a base member; and a plurality of spaced apart light-transmissive members, each of which is formed on and tapers from an upper surface of the base member, and each of which is made of a light-transmissive material having a refractive index lower than that of the base member. A light-emitting diode having the epitaxial substrate, and methods for making the epitaxial substrate and the light-emitting diode are also disclosed.

Abstract: A high-voltage flip-chip LED structure and a manufacturing method thereof are disclosed. The manufacturing method includes: providing a die substrate, depositing a first passivation layer, forming a co-electrical-connecting layer, depositing a second passivation layer, depositing a mirror layer, forming two conductive tunnels by etching, and providing two connecting metal layers. The die substrate includes a sapphire substrate and multiple LED chips thereon. The fully transparent co-electrical-connecting layer, formed after formation of the first passivation layer, electrically connects the LED chips in series. The outer surface of the deposited second passivation layer is a flat passivation surface that enables the mirror layer thereon to be level and reflect light without optical path difference. The two connecting metal layers are provided for electrical conduction. The high-voltage flip-chip LED structure thus formed has fully transparent electrodes and can output light without optical path difference.

Abstract: An epitaxial substrate includes: a base member; and a plurality of spaced apart light-transmissive members, each of which is formed on and tapers from an upper surface of the base member, and each of which is made of light-transmissive material having a refractive index lower than that of the base member. A light-emitting diode having the epitaxial substrate, and methods for making the epitaxial substrate and the light-emitting diode are also disclosed.

Abstract: A method for patterning an epitaxial substrate with nano-patterns, includes: forming a plurality of zinc oxide nano-particles on an epitaxial substrate; dry-etching the epitaxial substrate exposed from the zinc oxide nano-particles to form nano-patterns corresponding to the zinc oxide nano-particles; and removing the zinc oxide nano-particles on the epitaxial substrate. A method for forming a light-emitting diode having a patterned epitaxial substrate with the nano-patterns is also disclosed.

Abstract: The present invention discloses a LED package structure with transparent electrodes. The electrode layers the semiconductor layers inside the LED chip and the protection layer are all transparent to visible and invisible lights. With the adoption of the present invention, electrodes on the LED package no longer block any part of the light emission from inside the LED.

Abstract: The present invention provides a Cu2ZnSnSe4 (CZTSe) nanoink composition and a CZTSe sputtering target thereof for use in manufacturing an absorption layer of a thin-film solar cell. The CZTSe sputtering target includes a binary multiphase mixture and/or a ternary multiphase mixture. The CZTSe nanoink composition not only includes the binary multiphase mixture and/or ternary multiphase mixture but also includes a chelating agent. Any two of Cu, Zn, Sn, and Se are combined by the chelating agent to form the binary multiphase mixture. Alternatively, any three of Cu, Zn, Sn, and Se are combined by the chelating agent to form the ternary multiphase mixture. By manufacturing the absorption layer of the thin-film solar cell in the aforesaid manner, the absorption layer has a perfect quaternary monophase structure but does not manifest any impure phase detrimental to photoelectric conversion efficiency.

Abstract: A light-emitting diode includes: an epitaxial substrate including a base member, and a plurality of spaced apart first light-transmissive members; a light-emitting unit including a first-type semiconductor layer, a light-emitting layer, and a second-type semiconductor layer; and an electrode unit electrically connected to the light-emitting unit. The first-type semiconductor layer has a bottom film covering the first light-transmissive members, a plurality of spaced apart second light-transmissive members formed on a top face of the bottom film, and a top film formed on the bottom film to cover the second light-transmissive members.

Abstract: A nanoink composition for forming an absorber layer of a thin film solar cell comprises particles and a volatile chelating agent mixing with the particles. The particles contain one or more elements selected from group IB and/or IIB and/or IVA and/or VIA. In the present invention, the volatile chelating agent is a polyetheramine which can alternatively be monoamine compounds, diamine compounds and triamine compounds and has a molecular weight of from about 100 to about 4,000. Accordingly, the particles can be reacted mutually into a single composition while the existence of the volatile chelating agent.

Abstract: A light-emitting diode includes: an epitaxial substrate; a light-emitting unit including a lower semiconductor layer, and at least two epitaxial units that are separately formed on the lower semiconductor layer, the epitaxial units cooperating with the lower semiconductor layer to define two light-emitting sources that are capable of emitting different colors of light; and an electrode unit including a first electrode which is formed on an exposed portion of the lower semiconductor layer exposed from the epitaxial units, and at least two second electrodes each of which is formed on a corresponding one of the epitaxial units. A method for forming a light-emitting diode is also disclosed.

Abstract: A light-emitting diode structure includes first and second conductors, and a light-emitting diode unit. The light-emitting diode unit includes: a light-emitting diode die including first and second polarity sides, and a surrounding surface, the first polarity side being electrically connected to the first conductor; an insulator disposed around the surrounding surface; and a transparent conductive film extending from the second polarity side, along an outer surface of the insulator, and to the second conductor, so that the second polarity side is electrically connected to the second conductor through the transparent conductive film.

Abstract: A light-emitting diode device includes: a substrate including first and second conductors; a light-emitting diode die including first and second polarity sides, and a surrounding surface formed between the first and second polarity sides; an insulator disposed around the surrounding surface; a transparent conductive layer extending from the second polarity side of the light-emitting diode die oppositely of the substrate, along an outer surface of the insulator, and to the second conductor; and a reflecting cup formed on the substrate to define a space with the substrate. The light-emitting diode die, the insulator and the transparent conductive layer are disposed in the space.

Abstract: A method for patterning an epitaxial substrate with nano-patterns, includes: forming a plurality of zinc oxide nano-particles on an epitaxial substrate; dry-etching the epitaxial substrate exposed from the zinc oxide nano-particles to form nano-patterns corresponding to the zinc oxide nano-particles; and removing the zinc oxide nano-particles on the epitaxial substrate. A method for forming a light-emitting diode having a patterned epitaxial substrate with the nano-patterns is also disclosed.

Abstract: A light-emitting diode includes: an epitaxial substrate including a base member, and a plurality of spaced apart first light-transmissive members; a light-emitting unit including a first-type semiconductor layer, a light-emitting layer, and a second-type semiconductor layer; and an electrode unit electrically connected to the light-emitting unit. The first-type semiconductor layer has a bottom film covering the first light-transmissive members, a plurality of spaced apart second light-transmissive members formed on a top face of the bottom film, and a top film formed on the bottom film to cover the second light-transmissive members.

Abstract: An epitaxial substrate includes: a base member; and a plurality of spaced apart light-transmissive members, each of which is formed on and tapers from an upper surface of the base member, and each of which is made of a light-transmissive material having a refractive index lower than that of the base member. A light-emitting diode having the epitaxial substrate, and methods for making the epitaxial substrate and the light-emitting diode are also disclosed.

Abstract: A high-reflection multilayer coating, which includes a baseplate, a reflecting layer and a composite reflecting layer, in which the reflecting layer is contiguously disposed between the baseplate and the composite reflecting layer, and the composite reflecting layer is provided with a first structure layer and a second structure layer. Moreover, the first structure is mutually contiguously disposed on the reflecting layer. Accordingly, the present invention is able to achieve 95˜100% high light reflectivity over a wavelength range of 400˜800 nanometers, thus increasing light reflectivity and extending the range of reflection. The present invention is able to increase the degree of illumination, brightness and uniformity when used in various types of lamps.

Abstract: An LED structure includes a first substrate; an adhering layer formed on the first substrate; first ohmic contact layers formed on the adhering layer; epi-layers formed on the first ohmic contact layers; a first isolation layer covering the first ohmic contact layers and the epi-layers at exposed surfaces thereof; and first electrically conducting plates and second electrically conducting plates, both formed in the first isolation layer and electrically connected to the first ohmic contact layers and the epi-layers, respectively. The trenches allow the LED structure to facilitate complex serial/parallel connection so as to achieve easy and various applications of the LED structure in the form of single structures under a high-voltage environment.

Abstract: An LED structure includes a first substrate; an adhering layer formed on the first substrate; first ohmic contact layers formed on the adhering layer; epi-layers formed on the first ohmic contact layers; a first isolation layer covering the first ohmic contact layers and the epi-layers at exposed surfaces thereof; and first electrically conducting plates and second electrically conducting plates, both formed in the first isolation layer and electrically connected to the first ohmic contact layers and the epi-layers, respectively. The first trenches or the second trenches allow the LED structure to facilitate complex serial/parallel connection so as to achieve easy and various applications of the LED structure in the form of single structures under a high-voltage environment.

Abstract: A light-emitting diode (LED) and a method for manufacturing the same are described. The light-emitting diode comprises: a conductive substrate including a first surface and a second surface opposite to the first surface; a metal bonding layer deposed on the first surface of the conductive substrate; a reflective metal layer deposed on the metal bonding layer; an N-type semiconductor layer deposed on the reflective metal layer; an active layer deposed on the N-type semiconductor layer; a P-type semiconductor layer deposed on the active layer; a window layer deposed on the P-type semiconductor layer, wherein a thickness of the window layer is substantially at least 50 ?m, and the window layer is composed of a transparent conductive material; and a P-type electrode deposed on the window layer.

Abstract: A light-emitting diode (LED) and a method for manufacturing the same are described. The light-emitting diode has a metal substrate, a first transparent conductive layer, a first contact layer, and an illuminating epitaxial structure stacked in sequence. An ohmic contact layer is located on a portion of the illuminating epitaxial structure. A thickness of the metal substrate is greater than 40 ?m. The first contact layer is a doped strained-layer-superlattices (SLS) structure. Additionally, the light-emitting diode can further be a reflective layer located between the metal substrate and the first transparent conductive layer.

Abstract: A light-emitting diode (LED) and a method for manufacturing the same are described. The light-emitting diode has a first substrate. An illuminant epitaxial structure is deposited on a surface of the first substrate, in which the illuminant epitaxial structure has a first surface and a second surface opposite each other, the first surface is relatively adjacent to the first substrate, and the illuminant epitaxial structure includes at least one pit in the second surface. A second substrate is deposited on the second surface of the illuminant epitaxial structure. An adhesion layer is deposited between the second surface of the illuminant epitaxial structure and the second substrate to bond the second substrate to the illuminant epitaxial structure.