Abstract: A semiconductor device includes a fin structure. A source/drain region is formed on the fin structure. A first gate structure is disposed over the fin structure. A source/drain contact is disposed over the source/drain region. The source/drain contact has a protruding segment that protrudes at least partially over the first gate structure. The source/drain contact electrically couples together the source/drain region and the first gate structure.

Abstract: A resource allocation method comprises using resources with a used resource quantity of a machine learning system to execute a first experiment which has a first minimum resource demand, receiving an experiment request associated with a target dataset, deciding a second experiment according to the target dataset, deciding a second minimum resource demand of the second experiment, allocating resources with a quantity equal to the second minimum resource demand for an execution of the second experiment when a total resource quantity of the machine learning system meets a sum of the first minimum resource demand and the second minimum resource demand and a difference between the total resource quantity and the used resource quantity meets the second minimum resource demand, determining that the machine learning system has an idle resource, and selectively allocating said the idle resource for at least one of the first experiment and the second experiment.

Abstract: Methods and systems for dry cleaning a semiconductor processing reaction chamber are disclosed herein. In some embodiments, a method for cleaning a semiconductor processing reaction chamber includes: performing a plasma-assisted cleaning process to clean tube deposits formed on an inner surface of the deposition reaction chamber, the plasma-assisted cleaning process comprises: providing a first reactant gas to a remote plasma source chamber to generate a plasma, wherein the plasma comprising a fluorine-containing radical; and providing the plasma from the remote plasma source chamber to the deposition reaction chamber to clean the tube deposits, and performing a chemical cleaning process by providing a second reactant gas to the deposition reaction chamber after performing the plasma dry cleaning process.

Abstract: An apparatus for wafer processing includes a wafer pedestal configured to support a wafer, a radiation source configured to provide an electromagnetic radiation to the wafer, and a transparent window disposed between the wafer pedestal and the radiation source. The transparent window has a first zone having a first rough surface, and an Ra value of the first rough surface is between approximately 0.5 ?m and approximately 100 ?m. The apparatus for wafer processing further includes a primary reflector disposed in the radiation source, and a secondary reflector disposed between the transparent window and the radiation source. The rough surface can be provided over the transparent window, the primary reflector, and/or the secondary reflector.

Abstract: An apparatus for wafer processing includes a wafer pedestal configured to support a wafer, a radiation source configured to provide an electromagnetic radiation to the wafer, and a transparent window disposed between the wafer pedestal and the radiation source. The transparent window has a first zone having a first rough surface, and an Ra value of the first rough surface is between approximately 0.5 ?m and approximately 100 ?m. The apparatus for wafer processing further includes a primary reflector disposed in the radiation source, and a secondary reflector disposed between the transparent window and the radiation source. The rough surface can be provided over the transparent window, the primary reflector, and/or the secondary reflector.

Abstract: An apparatus includes an ionization chamber and an electron source device at least partially disposed inside the ionization chamber. The ionization chamber is configured to receive at least one chemical and provide plasma having ionized chemicals. The electron source device includes at least one filament configured to generate electrons, and a cathode configured to emit secondary electrons from the front surface when the electrons from the at least one filament hit the back surface of the cathode. The front surface of the cathode is shaped convex facing inside the ionization chamber.

Abstract: Methods and systems for dry cleaning a semiconductor processing reaction chamber are disclosed herein. In some embodiments, a method for cleaning a semiconductor processing reaction chamber includes: performing a plasma-assisted cleaning process to clean tube deposits formed on an inner surface of the deposition reaction chamber, the plasma-assisted cleaning process comprises: providing a first reactant gas to a remote plasma source chamber to generate a plasma, wherein the plasma comprising a fluorine-containing radical; and providing the plasma from the remote plasma source chamber to the deposition reaction chamber to clean the tube deposits, and performing a chemical cleaning process by providing a second reactant gas to the deposition reaction chamber after performing the plasma dry cleaning process.

Abstract: A recyclable cable tie has a single-aperture buckle, at least one multi-aperture buckle and a belt. The top of the single-aperture buckle is connected to the bottom of the most proximal multi-aperture buckle via the connecting tape. Each one of the at least one multi-aperture buckle has at least two up-down symmetrically arranged engaging cases. Each engaging case has an engaging pawl and an opening. Multiple unidirectional ratchets are formed on the top of the engaging pawl and extend up into the opening of the multi-aperture buckle. The belt is connected to the bottom of the single-aperture buckle. The belt may first engage with the single-aperture buckle, and the extra tail of the belt may be cut off. The extra tail that is cut off may be further used to engage with the multi-aperture buckles continuously so as to be recyclable.

Abstract: A pixel structure includes a first patterned transparent conductive layer, an active layer, an insulating layer and a second patterned transparent conductive layer. The first patterned transparent conductive layer is disposed on a substrate and includes a source, a drain and a pixel electrode connected to the drain. The active layer connects the source and the drain. The insulating layer covers the source, the drain and the active layer. The second patterned transparent conductive layer is disposed on the insulating layer and includes a gate disposed above the active layer and a common electrode disposed above the pixel electrode. A fabrication method of a pixel structure is also provided.

Abstract: A wafer boat includes a base, a plurality of support rods and a plurality of cantilever arms. The support rods are carried by the base. The support rods are disposed around a space above the base. The cantilever arms are carried by the support rods. At least two of the cantilever arms carried by at least one of the support rods are vertically spaced apart to define at least one slot for a wafer.

Abstract: A vertical furnace includes a heat treatment tube, at least one reactive gas inlet, first adiabatic plates and second adiabatic plates. The at least one reactive gas inlet is disposed at or near a bottom end of the heat treatment tube. The first adiabatic plates are stacked in the heat treatment tube, each of the first adiabatic plates having a flow channel structure for allowing a gas to pass through, in which all the corners in the flow channel structure are rounded. The second adiabatic plates are stacked below the first adiabatic plates in the heat treatment tube.

Abstract: A pixel structure and a manufacturing method of the pixel structure are provided. The pixel structure includes a substrate, a transistor, a planarizing layer, a plurality of contact windows, and a pixel electrode layer. The transistor is disposed on the substrate and includes a gate, a source, and a drain. The planarizing layer is disposed on the gate, the source, and a portion of the drain. The contact windows penetrate the planarizing layer and expose another portion of the drain. The pixel electrode layer is disposed on the planarizing layer, on the another portion of the drain, and in the contact windows and is electrically connected to the drain.

Abstract: A clutch switching device for electric rolling doors contains: a housing, a rotating plate, and a shifting bar. The rotating plate is provided in the housing for connecting with the clutch pulling cord. The shifting bar is coupled with the rotating plate and is pulled to drive the rotating plate to move toward a manual mode position or an automatic mode position. The rotating plate has a wrenching portion for matching with a wrench tool so as to wrench the rotating plate. The housing includes a movable fixing element, the rotating plate has a first positioning aperture and a second positioning aperture, such that when the rotating plate is located at a manual mode position, the first positioning aperture aligns and retains with the movable fixing element; when the rotating plate is located at the automatic mode position, the second positioning aperture aligns and retains with the movable fixing element.

Abstract: A vertical furnace includes a heat treatment tube, at least one reactive gas inlet, first adiabatic plates and second adiabatic plates. The at least one reactive gas inlet is disposed at or near a bottom end of the heat treatment tube. The first adiabatic plates are stacked in the heat treatment tube, each of the first adiabatic plates having a flow channel structure for allowing a gas to pass through, in which all the corners in the flow channel structure are rounded. The second adiabatic plates are stacked below the first adiabatic plates in the heat treatment tube.

Abstract: A clutch switching device for electric rolling doors contains: a housing, a rotating plate, and a shifting bar. The rotating plate is provided in the housing for connecting with the clutch pulling cord. The shifting bar is coupled with the rotating plate and is pulled to drive the rotating plate to move toward a manual mode position or an automatic mode position. The rotating plate has a wrenching portion for matching with a wrench tool so as to wrench the rotating plate. The housing includes a movable fixing element, the rotating plate has a first positioning aperture and a second positioning aperture, such that when the rotating plate is located at a manual mode position, the first positioning aperture aligns and retains with the movable fixing element; when the rotating plate is located at the automatic mode position, the second positioning aperture aligns and retains with the movable fixing element.

Abstract: A pixel structure includes a first patterned transparent conductive layer, an active layer, an insulating layer and a second patterned transparent conductive layer. The first patterned transparent conductive layer is disposed on a substrate and includes a source, a drain and a pixel electrode connected to the drain. The active layer connects the source and the drain. The insulating layer covers the source, the drain and the active layer. The second patterned transparent conductive layer is disposed on the insulating layer and includes a gate disposed above the active layer and a common electrode disposed above the pixel electrode. A fabrication method of a pixel structure is also provided.

Abstract: A pixel structure and a manufacturing method of the pixel structure are provided. The pixel structure includes a substrate, a transistor, a planarizing layer, a plurality of contact windows, and a pixel electrode layer. The transistor is disposed on the substrate and includes a gate, a source, and a drain. The planarizing layer is disposed on the gate, the source, and a portion of the drain. The contact windows penetrate the planarizing layer and expose another portion of the drain. The pixel electrode layer is disposed on the planarizing layer, on the another portion of the drain, and in the contact windows and is electrically connected to the drain.

Abstract: The present invention relates to an electrical garage door with a secondary power supply, comprising: a garage door mechanism, a driving mechanism, a power receiving device, and a controlling and boosting device. In the present invention, it mainly installs the power receiving device and the controlling and boosting device to the garage door mechanism; therefore, once the city power discontinues to supply power to the controlling device and the driving mechanism of the garage door mechanism, user may connect a car cigarette lighter power cable to the power receiving device and provide a secondary power to the power receiving device, and then the controlling and boosting device can convert the voltage value of the secondary power to a target voltage value, and then the controlling and boosting device outputs the secondary power with the target voltage value for driving the driving mechanism to operate.

Abstract: The present invention discloses a driving machine with a detachable battery for electric garage doors and electric rolling doors, which is electrically driven to open or close an electric garage door or electric rolling door, and which comprises a driving device and a spare power device. The spare power device can be detachably assembled to and electrically connected with the driving device. The spare power device has a rechargeable battery, which provides the driving device with power required to open or close the electric garage door or electric rolling door in electric outage.

Abstract: An optical disk drive of recording a re-writable optical disk and the method thereof. First, an optimum power is determined. A gain of a SBAD (Sub Beam Adder) signal is adjusted for generating an calibrated SBAD signal such that the calibrated SBAD signal maintains at the same level during a write power phase and a read power phase substantially. Then, the re-writable optical disk is recorded by using the optimum power. Next, a defect of the re-writable optical disk is detected according to the calibrated SBAD signal. Then, the optical disk drive will jump over the defect and prevent it from being data-recorded so as to avoid system malfunction.