Abstract: Example embodiments relating to forming gate structures, e.g., for Fin Field Effect Transistors (FinFETs), are described. In an embodiment, a structure includes first and second device regions comprising first and second FinFETs, respectively, on a substrate. A distance between neighboring gate structures of the first FinFETs is less than a distance between neighboring gate structures of the second FinFETs. A gate structure of at least one of the first FinFETs has a first and second width at a level of and below, respectively, a top surface of a first fin. The first width is greater than the second width. A second gate structure of at least one of the second FinFETs has a third and fourth width at a level of and below, respectively a top surface of a second fin. A difference between the first and second widths is greater than a difference between the third and fourth widths.

Abstract: A cross flow fan includes a fan frame and a rotor having a hub, a shaft connected with the hub at its rotation center, a plurality of blades, and a disk structure connected with the blades and hub within the fan frame. The fan frame has a frame wall having a lateral flow inlet to the rotor and a lateral flow outlet from the rotor, a base carrying the rotor and frame wall, a cover on one side of the frame wall opposite to the base, and a partition structure disposed between the blades and an inner wall surface of the frame wall. A normal line of the lateral flow inlet and a normal line of the lateral flow outlet are not parallel to an extension direction of the shaft. The blades directly face the lateral flow inlet and the lateral flow outlet along radial directions of the shaft.

Abstract: A solid state storage device is in communication with a host. The solid state storage device includes a control circuit and a non-volatile memory. The control circuit is in communication with the host. The control circuit includes an error correction circuit and a prediction model storage circuit. A prediction model is stored in the prediction model storage circuit. The non-volatile memory includes a memory cell array. The memory cell array includes plural blocks. Each of the blocks includes a corresponding state parameter. The control circuit determines a selected block from the memory cell array. The control circuit judges whether to perform a specified operation on the selected block according to the state parameter of the selected block and the prediction model.

Abstract: A semiconductor device includes a substrate having a fin projecting upwardly through an isolation structure over the substrate; a gate stack over the isolation structure and engaging the fin; and a gate spacer on a sidewall of the gate stack and in physical contact with the gate stack. The semiconductor device further includes a first dielectric layer vertically between the fin and the gate spacer. The semiconductor device further includes a second dielectric layer vertically between the first dielectric layer and the gate spacer, wherein the first and second dielectric layers include different materials, and wherein the second dielectric layer is in physical contact with the gate spacer and the first dielectric layer.

Abstract: A planar ammonia selective sensing electrode for water quality monitoring and a manufacturing method of the sensing electrode are provided. The sensing electrode includes an insulating base plate, an electric-conductive layer, an ammonium ion sensing layer, a hydroxide ion sensing layer, and an electrolyte layer. The electric-conductive layer is disposed on the planar surface of the insulating base plate. The electric-conductive layer includes a first conductive part and a second conductive part. The first conductive part and the second conductive part are insulated and apart from each other, and configured to form a first reaction zone and a second reaction zone, respectively. The ammonium ion sensing layer is disposed on the first reaction zone. The hydroxide ion sensing layer is disposed on the second reaction zone. The electrolyte layer is disposed on and covers the ammonium ion sensing layer and the hydroxide ion sensing layer.

Abstract: An optical imaging lens includes first, second, third, fourth, fifth and sixth lens elements arranged in order from the object side to the image side. The first lens element has an image-side surface with a concave portion in a vicinity of its periphery, the third lens element has positive refractive power and an object-side surface with a convex portion in a vicinity of its periphery, the fifth lens element has negative refractive power, and the sixth lens element has an image-side surface with a concave portion in a vicinity of the optical axis.

Abstract: An optical imaging lens includes first, second, third, fourth, fifth, and sixth lens elements, each having an object-side surface facing toward an object side and an image-side surface facing toward an image side. The image-side surface of the first lens element includes a concave portion in a vicinity of the optical axis and a concave portion in a vicinity of a periphery of the first lens element. The image-side surface of the second lens element includes a convex portion in a vicinity of the optical axis. The image-side surface of the third lens element includes a concave portion in a vicinity of a periphery of the third lens element. The object-side surface of the fourth lens element includes a concave portion in a vicinity of the optical axis. The optical imaging lens as a whole has only the six lens elements having refractive power.

Abstract: A fan includes a fan frame and a rotor having a hub, a shaft connected with the hub at its rotation center, blades, and a disk structure connected with the blades and hub within the fan frame. The fan frame has a frame wall having inlet and outlet surfaces, a base carrying the rotor and frame wall, a cover on one side of the frame wall opposite to the base, and a tongue structure between the base and cover. The normal lines of the inlet and outlet surfaces are not parallel to the extension direction of the shaft. The distance between the virtual line segment of the outlet surface and shaft is the shortest distance between the shaft and outlet surface. The extended line from the center of the groove opening of the tongue structure intersects the imaginary plane where the virtual line segment and shaft are located.

Abstract: A camera module includes a variable aperture module and a lens module. The variable aperture module includes at least one aperture piece and a radial propulsion device. The lens module includes a lens assembly and an axial propulsion device. The axial propulsion device is configured to drive the lens assembly along an axial direction. The radial propulsion device is configured to propel the aperture piece in a radial direction approaching a central axis of the lens assembly, such that a portion of the aperture piece enters the lens assembly through an opening defined by the wall of the lens barrel. The radial propulsion device is configured to retract the aperture piece in a radial direction away from the central axis of the lens assembly, such that the portion of the aperture piece leaving the lens assembly through the opening defined by the wall of the lens barrel.

Abstract: A failure mode detection method is provided. A first default read voltage is changed to a first read retry voltage by a first increment, and a second default read voltage is changed to a second read retry voltage by a second increment. A memory cell array of a solid state storage device is successfully read according to the first and second read retry voltages. If an absolute value of the first increment minus an absolute value of the second increment is larger than a predetermined voltage value, the memory cell array is in a data retention failure mode. If the absolute value of the first increment minus the absolute value of the second increment is smaller than the predetermined voltage value, the memory cell array is in a low temperature write high temperature read failure mode.

Abstract: An imaging lens includes first to sixth lens elements arranged from an object side to an image side in the given order. Through designs of surfaces of the lens elements and relevant optical parameters, a short system length of the imaging lens may be achieved while maintaining good optical performance.

Abstract: A topical formulation comprising (a) a therapeutically effective amount of tofacitinib; (b) at least one solvent; and (c) optionally one or more other pharmaceutically acceptable excipients is provided. Also provided is a method for treating and/or preventing autoimmune diseases in a subject administering said topical formulation.

Abstract: A semiconductor device includes a substrate having a fin projecting upwardly through an isolation structure over the substrate; a gate stack over the isolation structure and engaging the fin; and a gate spacer on a sidewall of the gate stack and in physical contact with the gate stack. The semiconductor device further includes a first dielectric layer vertically between the fin and the gate spacer and in physical contact with the sidewall of the gate stack, wherein the first dielectric layer has a laterally extending cavity. The semiconductor device further includes a second dielectric layer filling in the cavity, wherein the first and second dielectric layers include different materials.

Abstract: An optical imaging lens includes first, second, third, fourth, fifth, and sixth lens elements, each having an object-side surface facing toward an object side and an image-side surface facing toward an image side. The image-side surface of the first lens element comprises a concave portion in a vicinity of a periphery of the first lens element and the image-side surface of the second lens element comprises a convex portion in a vicinity of the optical axis. The fourth lens element has positive refractive power. The image-side surface of the sixth lens element comprises a concave portion in a vicinity of the optical axis and the optical imaging lens as a whole has only the six lens elements having refractive power.

Abstract: The present invention relates to a negative pressure wound therapy device, system and method. The negative pressure wound therapy device is connected with a dressing, and comprises a housing, a control circuit board, a pump, and an aspiration conduit. The pump generates negative pressure. The pump may comprise a voltage-actuated deformation element (such as piezoelectric vibration element) to push fluid from an aspiration end to a discharge end. The aspiration conduit has a pump end and a dressing end. The pump end is fluidly connected to the aspiration end of the pump, and the dressing end is fluidly connected to the dressing used for covering a wound. The control circuit board is disposed in the housing, controls the pump to generate the negative pressure in the aspiration conduit, and applies negative pressure to the wound covered by the dressing via the aspiration conduit.

Abstract: A control method of a solid state storage device includes the following steps. Firstly, a block of a memory cell array is checked. Then, a judging step is performed to judge whether a data storage time period of the block exceeds a threshold period. If the data storage time period of the block exceeds the threshold period, the block is tagged or a data of the block is refreshed.

Abstract: A method of fabricating a fin structure with tensile stress includes providing a structure divided into an N-type transistor region and a P-type transistor region. Next, two first trenches and two second trenches are formed in the substrate. The first trenches define a fin structure. The second trenches segment the first trenches and the fin. Later, a flowable chemical vapor deposition is performed to form a silicon oxide layer filling the first trenches and the second trenches. Then, a patterned mask is formed only within the N-type transistor region. The patterned mask only covers the silicon oxide layer in the second trenches. Subsequently, part of the silicon oxide layer is removed to make the exposed silicon oxide layer lower than the top surface of the fin structure by taking the patterned mask as a mask. Finally, the patterned mask is removed.

Abstract: An array sensing electrode includes an electric insulating base plate, a plurality of electric conductive assemblies, a reference sensing layer, at least a chemical sensing layer, and an electrolyte layer. The electric insulating base plate has a plurality of perforations. Each electric conductive assembly includes an electric conductive filler, a first electric conductive part, and a second electric conductive part. The electric conductive filler is penetrated through the perforation, and the first electric conductive part and the second electric conductive part are disposed on a first plane and a second plane of the electric conductive filler, respectively. The reference sensing layer and the chemical sensing layer are disposed on different first electric conductive parts, and the electrolyte layer is disposed on the reference sensing layer and the chemical sensing layer to cover thereon. Therefore, the advantages of decreasing the manufacture cost and being conductive to packaging are achieved.

Abstract: A multiple lenses system applied in an electronic device is provided. The multiple lenses system includes a camera module, a focus module, an image sensor and a processor. The camera module includes at least one macro lens, at least one functional lens and a focus distance threshold. The focus module focuses on an object to be captured and obtains a focus distance. The image sensor captures images cooperatively with the camera module. The processor compares the focus distance and the focus distance threshold. If the processor determines the focus distance crosses the focus distance threshold, then the processor triggers the camera module to switch between the at least one macro lens and the at least one functional lens for capturing images. An electronic device employing the multiple lenses system and an operation method thereof are also provided.

Abstract: An operation method of a multiple lenses system applied in an electronic device is provided. The multiple lenses system includes at least one first lens and at least one second lens. The operation method includes: selecting a present capturing mode from a plurality of capturing modes; obtaining a preview image; estimating a focus distance by obtaining a sharpness of an object's edge in the preview image; determining whether the focus distance crosses a threshold; and switching from the at least one first lens to the at least one second lens or switching from the at least one second lens to the at least one first lens to obtain the preview image if the focus distance crosses the threshold. An electronic device is also provided.