Abstract: An optical imaging lens includes first, second, third, fourth, fifth, and sixth lens elements, each having an object-side surface facing toward an object side and an image-side surface facing toward an image side. The image-side surface of the first lens element includes a concave portion in a vicinity of the optical axis and a concave portion in a vicinity of a periphery of the first lens element. The image-side surface of the second lens element includes a convex portion in a vicinity of the optical axis. The image-side surface of the third lens element includes a concave portion in a vicinity of a periphery of the third lens element. The object-side surface of the fourth lens element includes a concave portion in a vicinity of the optical axis. The optical imaging lens as a whole has only the six lens elements having refractive power.

Abstract: A topical formulation comprising (a) a therapeutically effective amount of tofacitinib; (b) at least one solvent; and (c) optionally one or more other pharmaceutically acceptable excipients is provided. Also provided is a method for treating and/or preventing autoimmune diseases in a subject administering said topical formulation.

Abstract: An optical imaging lens comprises first, second, third, fourth, fifth and sixth lens elements arranged sequentially from an object side to an image side along an optical axis. The object-side surface of the second lens element has a concave portion in the vicinity of a periphery of the second lens element, and the image-side surface of the second lens element has a concave portion in a vicinity of the optical axis. The image-side surface of the third lens element has a concave portion in the vicinity of a periphery of the third lens element. An effective focal length of the optical imaging lens is EFL, an air gap between the fourth lens element and the fifth lens element along the optical axis is G45, a central thickness of the sixth lens element along the optical axis is represented by T6, and EFL, G45 and T6 satisfy the equation: EFL/(G45+T6)?6.40.

Abstract: An imaging lens includes first to sixth lens elements arranged from an object side to an image side in order from an object side to an image side along an optical axis of the imaging lens. Through designs of surfaces of the lens elements and relevant optical parameters, a short system length of the imaging lens may be achieved while maintaining good optical performance.

Abstract: A method for fabricating semiconductor device includes the steps of: forming fin-shaped structures on a substrate; using isopropyl alcohol (IPA) to perform a rinse process; performing a baking process; and forming a gate oxide layer on the fin-shaped structures. Preferably, a duration of the rinse process is between 15 seconds to 60 seconds, a temperature of the baking process is between 50° C. to 100° C., and a duration of the baking process is between 5 seconds to 120 seconds.

Abstract: A memory controller comprising: a delay circuit, configured to use a first delay value and a second delay value to respectively delay a sampling clock signal to generate a first and a second delayed sampling clock signal; a sampling circuit, configured to use a first edge of the first delayed sampling clock signal to sample a data signal to generate a first sampling value, and configured to use a second edge of the second delayed sampling clock signal to sample the data signal to generate a second sampling value; and a calibrating circuit, configured to generate a sampling delay value according to the first delay value based on the first sampling value and the second sampling value. The delay circuit uses the sampling delay value to generate an adjusted sampling clock signal and the sampling circuit sample the data signal by the adjusted sampling clock signal.

Abstract: A method of foreground auto-calibrating data reception window for a DRAM system is disclosed. The method comprises receiving data strobe and data from a DRAM of the DARM system, capturing a data strobe clock according to the received data strobe, generating three time points with a period of the data strobe clock, sampling the data at the three time points, to obtain three sampled data, determining whether to adjust positions of the three time points according to a comparison among the three sampled data, and configuring the valid data reception window according to the positions of the three time points when determining not to adjust the positions of the three time points.

Abstract: A semiconductor device and method are provided whereby a series of spacers are formed in a first region and a second region of a substrate. The series of spacers in the first region are patterned while the series of spacers in the second region are protected in order to separate the properties of the spacers in the first region from the properties of the spacers in the second region.

Abstract: An optical isolation structure and a method for fabricating the same are provided. The optical isolation structure includes an epitaxial layer and a dielectric layer. The epitaxial layer and the dielectric layer are formed in a deep trench of a semiconductor substrate. The epitaxial layer covers a lower portion of sidewall of the trench, and the dielectric layer covers an upper portion of the sidewall of the trench. In the method for fabricating the optical isolation structure, at first, shallow trenches are formed in the semiconductor substrate. Then, the dielectric layer is formed in the shallow trenches. Thereafter, deep trenches are formed passing through the dielectric layers. Then, the epitaxial layer is formed in the deep trenches.

Abstract: A method for fabricating semiconductor device includes the steps of: forming fin-shaped structures on a substrate; using isopropyl alcohol (IPA) to perform a rinse process; performing a baking process; and forming a gate oxide layer on the fin-shaped structures. Preferably, a duration of the rinse process is between 15 seconds to 60 seconds, a temperature of the baking process is between 50° C. to 100° C., and a duration of the baking process is between 5 seconds to 120 seconds.

Abstract: A semiconductor device includes a fin projecting upwardly from a substrate; a gate stack engaging the fin; a gate spacer on a sidewall of the gate stack and in contact with the gate stack; and a dielectric layer on the sidewall of the gate stack and in contact with the gate stack, the dielectric layer being vertically between the fin and the gate spacer, wherein the dielectric layer has a thickness small than the gate spacer.

Abstract: An optical imaging lens comprises first, second, third, fourth, fifth and sixth lens elements arranged sequentially from an object side to an image side along an optical axis. Each of the lens elements has an object-side surface facing toward the object side and an image-side surface facing toward the image side. The object-side surface of the first lens element has a convex portion in the vicinity of the optical axis. The third lens element has positive refracting power. The object-side surface of the third lens element has a concave portion in the vicinity of the optical axis. The object-side surface of the fourth lens element has a concave portion in the vicinity of the optical axis. The object-side surface of the fifth lens element has a concave portion in the vicinity of its periphery.

Abstract: An optical imaging lens includes first, second, third, fourth, fifth and sixth lens elements arranged in order from the object side to the image side along an optical axis. The object-side surface of the first lens element has a convex portion in a vicinity of a periphery of the first lens element. The second lens element has negative refractive power. The object-side surface of the second lens element has a convex portion in a vicinity of a periphery of the second lens element. The image-side surface of the fifth lens element has a concave portion in a vicinity of the optical axis. The image-side surface of the sixth lens element has a concave portion in a vicinity of the optical axis.

Abstract: An optical imaging lens includes first, second, third, fourth, fifth and sixth lens elements arranged in order from the object side to the image side along an optical axis. The first lens element has negative refractive power. The object-side surface of the fourth lens element has a convex part in a vicinity of a periphery of the fourth lens element. The image-side surface of the sixth lens element has a convex part in a vicinity of a periphery of the sixth lens element. The effective focal length of the optical imaging lens is EFL, and a sum of all air gaps from the first lens element to the sixth lens element along the optical axis is AAG, and EFL and AAG satisfy 0.9?EFL/AAG?2.6.

Abstract: An optical imaging lens includes six lens elements disposed sequentially from an object side to an image side. The image-side surface of the first lens element includes a concave portion in a vicinity of an optical axis. The fifth lens element has negative refractive power and the image-side surface of the fifth lens element includes a convex portion in a vicinity of the optical axis. The image-side surface of the sixth lens element includes a concave portion in a vicinity of the optical axis. The optical imaging lens as a whole has only the six lens elements having refractive power.

Abstract: A three-dimensional (3D) integrated circuit (IC) is provided. In some embodiments, a second IC die is bonded to a first IC die by a first bonding structure. A third IC die is bonded to the second IC die by a second bonding structure. The second bonding structure is arranged between back sides of the second IC die and the third IC die opposite to corresponding interconnect structures and comprises a first TSV (through substrate via) disposed through a second substrate of the second IC die and a second TSV disposed through a third substrate of the third IC die. The second bonding structure further comprises conductive features with oppositely titled sidewalls disposed between the first TSV and the second TSV.

Abstract: A method for manufacturing three-dimensional (3D) integrated circuit (IC) is provided. In some embodiments, a second IC die is formed and bonded to a first IC die by a first bonding structure. A third IC die is formed and bonded to the second IC die by a second bonding structure. The second bonding structure is formed between back sides of the second IC die and the third IC die opposite to corresponding interconnect structures and comprises a first TSV (through substrate via) disposed through a second substrate of the second IC die and a second TSV disposed through a third substrate of the third IC die. In some further embodiments, the second bonding structure is formed by forming conductive features with oppositely titled sidewalls disposed between the first TSV and the second TSV.

Abstract: A semiconductor device includes a substrate having a fin projecting upwardly through an isolation structure over the substrate; a gate stack over the isolation structure and engaging the fin; and a gate spacer on a sidewall of the gate stack and in physical contact with the gate stack. The semiconductor device further includes a first dielectric layer vertically between the fin and the gate spacer. The semiconductor device further includes a second dielectric layer vertically between the first dielectric layer and the gate spacer, wherein the first and second dielectric layers include different materials, and wherein the second dielectric layer is in physical contact with the gate spacer and the first dielectric layer.

Abstract: A camera module includes an imaging lens assembly and an image sensor. An image is formed on the image sensor via the imaging lens assembly, the image sensor is disposed on an image side of the imaging lens assembly, and the imaging lens assembly includes a lens barrel, a plurality of plastic lens elements and a first light blocking sheet. The plastic lens elements are disposed in the lens barrel. The first light blocking sheet is disposed in the lens barrel and has a non-circular opening. A portion of the image formed via the imaging lens assembly is a defocused image, and a shape of at least one portion of the defocused image is non-circular and corresponding to a shape of the non-circular opening of the first light blocking sheet.

Abstract: An imaging lens includes first to fifth lens elements arranged from an object side to an image side in the given order. Through designs of surfaces of the lens elements and relevant optical parameters, a short system length of the imaging lens may be achieved while maintaining good optical performance.