Patents by Inventor Shih-Yen Lin
Shih-Yen Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240105779Abstract: A method includes performing a first deposition process to form a first graphene layer over a substrate, the first deposition process being performed under a first temperature and a first pressure; performing a second deposition process to form a second graphene layer over the first graphene layer, the second deposition process being performed under a second temperature and a second pressure, in which the first temperature is higher than the second temperature, and the first pressure is lower than the second pressure; forming a gate structure over the second graphene layer; and forming source/drain contacts on opposite sides of the gate structure and electrically connected to the first and second graphene layers.Type: ApplicationFiled: January 9, 2023Publication date: March 28, 2024Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL TAIWAN UNIVERSITYInventors: Shih-Yen LIN, Che-Jia CHANG
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Publication number: 20240107903Abstract: A memory device includes a substrate, a 2-D material channel layer, a 2-D material charge storage layer, source/drain contacts, a gate dielectric layer, and a gate electrode. The 2-D material channel layer is over the substrate. The 2-D material charge storage layer is over the 2-D material channel layer. The 2-D charge storage layer and the 2-D material channel layer include the same chalcogen atoms. The source/drain contacts are over the 2-D material channel layer. The gate dielectric layer covers the source/drain contacts and the 2-D material charge storage layer. The gate electrode is over the gate dielectric layer.Type: ApplicationFiled: March 13, 2023Publication date: March 28, 2024Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL TAIWAN UNIVERSITYInventors: Shih-Yen LIN, Po-Cheng TSAI
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Publication number: 20240094834Abstract: An active stylus having physical writing function includes a tip shell including a first opening and a second opening, a first electrode including a first end protruded through the first opening of the tip shell and including a second end protruded through the second opening of the tip shell and entered a main body housing of the active stylus, wherein the first electrode includes conductive material. The tip shell includes non-conductive material. The first end of the first electrode is configured to leave colored traces on an object by physical friction caused between the first end of the first electrode and the object.Type: ApplicationFiled: July 27, 2023Publication date: March 21, 2024Inventors: Shih-Yen LEE, Tzu-Yu TING, Yeh Sen-Fan CHUEH, Min-Hung LIN, Shih-Hsiung HSIAO
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Publication number: 20240096976Abstract: A method includes forming a gate dielectric layer over a gate electrode layer; forming a 2-D material layer over the gate dielectric layer; forming source/drain contacts over source/drain regions of the 2-D material layer, in which each of the source/drain contacts includes an antimonene layer and a metal layer over the antimonene layer; and after forming the source/drain contacts, removing a first portion of the 2-D material layer exposed by the source/drain contacts, while leaving a second portion of the 2-D material layer remaining over the gate dielectric layer as a channel region.Type: ApplicationFiled: January 6, 2023Publication date: March 21, 2024Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL TAIWAN UNIVERSITYInventors: Shih-Yen LIN, Po-Cheng TSAI
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Publication number: 20240083828Abstract: The present application relates to a system and a method for producing vinyl chloride. The system comprise a preheat unit, a gas-liquid separating unit, a heat-recovery unit, a heating unit and a thermal pyrolysis unit, and therefore heat energy of the thermal pyrolysis product can be efficiently recovered. Energy cost of the system can be efficiently lowered with the heat-recovery unit and the heating unit, and further prolonging operating cycle of the system.Type: ApplicationFiled: June 28, 2023Publication date: March 14, 2024Inventors: Wen-Hsi HUANG, Sheng-Yen KO, Shih-Hong CHEN, Chun-Yu LIN
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Publication number: 20240079392Abstract: A semiconductor structure includes a first tier, a redistribution circuit structure, and a second tier. The first tier includes at least one first die. The redistribution circuit structure is disposed on the first tier and electrically coupled to the at least one first die, where the redistribution circuit structure has a multi-layer structure and includes a vertical connection structure continuously extending from a first side of the redistribution circuit structure to a second side of the redistribution circuit structure, and the first side is opposite to the second side along a stacking direction of the first tier and the redistribution circuit structure. The second tier includes a plurality of second dies, and is disposed on and electrically coupled to the redistribution circuit structure.Type: ApplicationFiled: January 10, 2023Publication date: March 7, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chuei-Tang WANG, Tso-Jung Chang, Jeng-Shien Hsieh, Shih-Ping Lin, Chih-Peng Lin, Chieh-Yen Chen, Chen-Hua Yu
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Publication number: 20240030034Abstract: A method includes forming a 2-D material semiconductor layer over a substrate; forming source/drain electrodes covering opposite sides of the 2-D material semiconductor layer, while leaving a portion of the 2-D material semiconductor layer exposed by the source/drain electrodes; forming a first gate dielectric layer over the portion of the 2-D material semiconductor layer by using a physical deposition process; forming a second gate dielectric layer over the first gate dielectric layer by using a chemical deposition process, in which a thickness of the first gate dielectric layer is less than a thickness of the second gate dielectric layer; and forming a gate electrode over the second gate dielectric layer.Type: ApplicationFiled: October 4, 2023Publication date: January 25, 2024Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL TAIWAN UNIVERSITYInventors: Shih-Yen LIN, Po-Cheng TSAI, Yu-Wei ZHANG
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Publication number: 20230088634Abstract: A semiconductor device includes a substrate, a 2-D material channel layer, a 2-D material passivation layer, source/drain contacts, and a gate structure. The 2-D material channel layer is over the substrate, wherein the 2-D material channel layer is made of graphene. The 2-D material passivation layer is over the 2-D material channel layer, wherein the 2-D material passivation layer is made of transition metal dichalcogenide (TMD). The source/drain contacts are over the 2-D material passivation layer. The gate structure is over the 2-D material passivation layer and between the source/drain contacts.Type: ApplicationFiled: March 10, 2022Publication date: March 23, 2023Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL TAIWAN UNIVERSITYInventors: Shih-Yen LIN, Po-Cheng TSAI
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Publication number: 20230061260Abstract: A method includes forming a 2-D material semiconductor layer over a substrate; forming source/drain electrodes covering opposite sides of the 2-D material semiconductor layer, while leaving a portion of the 2-D material semiconductor layer exposed by the source/drain electrodes; forming a first gate dielectric layer over the portion of the 2-D material semiconductor layer by using a physical deposition process; forming a second gate dielectric layer over the first gate dielectric layer by using a chemical deposition process, in which a thickness of the first gate dielectric layer is less than a thickness of the second gate dielectric layer; and forming a gate electrode over the second gate dielectric layer.Type: ApplicationFiled: August 30, 2021Publication date: March 2, 2023Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL TAIWAN UNIVERSITYInventors: Shih-Yen LIN, Po-Cheng TSAI, Yu-Wei ZHANG
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Publication number: 20230014503Abstract: An integrated circuit includes a substrate, a transistor over the substrate, a first inter-metal dielectric (IMD) layer over the transistor, a metal via in the first IMD layer, a first 2-D material layer cupping an underside of the metal via, a second IMD layer over the metal via, a metal line in the second IMD layer, and a second 2-D material layer cupping an underside of the metal line. The second 2-D material layer span across the metal via and the first 2-D material layer.Type: ApplicationFiled: January 10, 2022Publication date: January 19, 2023Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL TAIWAN UNIVERSITYInventors: Shih-Yen LIN, Yu-Wei ZHANG, Kuan-Chao CHEN, Si-Chen LEE, Chi CHEN
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Patent number: 11211460Abstract: A method of fabricating a semiconductor device having two dimensional (2D) lateral hetero-structures includes forming alternating regions of a first metal dichalcogenide film and a second metal dichalcogenide film extending along a surface of a first substrate. The first metal dichalcogenide and the second metal dichalcogenide films are different metal dichalcogenides. Each second metal dichalcogenide film region is bordered on opposing lateral sides by a region of the first metal dichalcogenide film, as seen in cross-sectional view.Type: GrantFiled: September 21, 2020Date of Patent: December 28, 2021Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., NATIONAL TAIWAN UNIVERSITYInventors: Shih-Yen Lin, Si-Chen Lee, Samuel C. Pan, Kuan-Chao Chen
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Patent number: 11171212Abstract: A semiconductor device and method of formation are provided. The semiconductor device includes a substrate, a first active area over the substrate, a second active area over the substrate, a graphene channel between the first active area and the second active area, and a first in-plane gate. In some embodiments, the graphene channel, the first in-plane gate, the first active area, and the second active area include graphene. A method of forming the first in-plane gate, the first active area, the second active area, and the graphene channel from a single layer of graphene is also provided.Type: GrantFiled: April 22, 2019Date of Patent: November 9, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITEDInventors: Meng-Yu Lin, Shih-Yen Lin, Si-Chen Lee
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Patent number: 11152209Abstract: The current disclosure describes semiconductor devices, e.g., transistors, include a substrate, a semiconductor region including, at the surface, MoS2 and/or other monolayer material over the substrate, and a terminal structure at least partially over the semiconductor region, which includes a different monolayer material grown directly over the semiconductor region.Type: GrantFiled: December 12, 2019Date of Patent: October 19, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Shih-Yen Lin, Hsuan-An Chen, Si-Chen Lee
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Patent number: 11121214Abstract: A semiconductor device includes a substrate, semiconductor 2-D material layer, a conductive 2-D material layer, a gate dielectric layer, and a gate electrode. The semiconductor 2-D material layer is over the substrate. The conductive 2-D material layer extends along a source/drain region of the semiconductor 2-D material layer, in which the conductive 2-D material layer comprises a group-IV element. The gate dielectric layer extends along a channel region of the semiconductor 2-D material layer. The gate electrode is over the gate dielectric layer.Type: GrantFiled: August 22, 2019Date of Patent: September 14, 2021Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., NATIONAL TAIWAN UNIVERSITYInventors: Shih-Yen Lin, Kuan-Chao Chen, Hsuan-An Chen, Lun-Ming Lee
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Patent number: 10985019Abstract: A method of fabricating a semiconductor device includes plasma etching a portion of a plurality of metal dichalcogenide films comprising a compound of a metal and a chalcogen disposed on a substrate by applying a plasma to the plurality of metal dichalcogenide films. After plasma etching, a chalcogen is applied to remaining portions of the plurality of metal dichalcogenide films to repair damage to the remaining portions of the plurality of metal dichalcogenide films from the plasma etching. The chalcogen is S, Se, or Te.Type: GrantFiled: April 27, 2020Date of Patent: April 20, 2021Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., NATIONAL TAIWAN UNIVERSITYInventors: Shih-Yen Lin, Kuan-Chao Chen, Si-Chen Lee, Samuel C. Pan
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Publication number: 20210057524Abstract: A semiconductor device includes a substrate, semiconductor 2-D material layer, a conductive 2-D material layer, a gate dielectric layer, and a gate electrode. The semiconductor 2-D material layer is over the substrate. The conductive 2-D material layer extends along a source/drain region of the semiconductor 2-D material layer, in which the conductive 2-D material layer comprises a group-IV element. The gate dielectric layer extends along a channel region of the semiconductor 2-D material layer. The gate electrode is over the gate dielectric layer.Type: ApplicationFiled: August 22, 2019Publication date: February 25, 2021Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., NATIONAL TAIWAN UNIVERSITYInventors: Shih-Yen LIN, Kuan-Chao CHEN, Hsuan-An CHEN, Lun-Ming LEE
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Publication number: 20210005719Abstract: A method of fabricating a semiconductor device having two dimensional (2D) lateral hetero-structures includes forming alternating regions of a first metal dichalcogenide film and a second metal dichalcogenide film extending along a surface of a first substrate. The first metal dichalcogenide and the second metal dichalcogenide films are different metal dichalcogenides. Each second metal dichalcogenide film region is bordered on opposing lateral sides by a region of the first metal dichalcogenide film, as seen in cross-sectional view.Type: ApplicationFiled: September 21, 2020Publication date: January 7, 2021Inventors: Shih-Yen LIN, Si-Chen LEE, Samuel C. PAN, Kuan-Chao CHEN
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Patent number: 10879140Abstract: Disclosed herein is a device having a shaped seal ring comprising a workpiece, the workpiece comprising at least one dielectric layer disposed on a first side of a substrate, a seal ring disposed in the at least one dielectric layer, and at least one groove in the seal ring. A lid is disposed over the workpiece, the workpiece extending into a recess in the lid and a first thermal interface material (TIM) contacts the seal ring and the lid, with the first TIM extending into the at least one groove. The workpiece is mounted to the package carrier. A die is mounted over a first side of workpiece and disposed in the recess. A first underfill a disposed under the die and a second underfill is disposed between the workpiece and the package carrier. The first TIM is disposed between the first underfill and the second underfill.Type: GrantFiled: December 20, 2018Date of Patent: December 29, 2020Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shih-Yen Lin, Yu-Chih Liu, Chin-Liang Chen, Wei-Ting Lin, Kuan-Lin Ho
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Patent number: 10872973Abstract: The current disclosure describes semiconductor devices, e.g., transistors, including a substrate, a semiconductor region including, at the surface, monolayer MoS2 and/or other monolayer material over the substrate, and a terminal structure over the semiconductor region, which includes a different monolayer material grown directly over the semiconductor region.Type: GrantFiled: December 28, 2018Date of Patent: December 22, 2020Assignees: Taiwan Semiconductor Manufacturing Co., Ltd., National Taiwan UniversityInventors: Shih-Yen Lin, Hsuan-An Chen
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Patent number: 10867835Abstract: A method and structure for packaging a semiconductor device are provided. In an embodiment a first substrate is bonded to a second substrate, which is bonded to a third substrate. A thermal interface material is placed on the second substrate prior to application of an underfill material. A ring can be placed on the thermal interface material, and an underfill material is dispensed between the second substrate and the third substrate. By placing the thermal interface material and ring prior to the underfill material, the underfill material cannot interfere with the interface between the thermal interface material and the second substrate, and the thermal interface material and ring can act as a physical barrier to the underfill material, thereby preventing overflow.Type: GrantFiled: December 17, 2018Date of Patent: December 15, 2020Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Kuan-Lin Ho, Chin-Liang Chen, Wei-Ting Lin, Yu-Chih Liu, Shih-Yen Lin