Abstract: An electromagnetic wave detector includes a semiconductor substrate, a first insulating film disposed on the semiconductor substrate and formed so as to expose a part of the semiconductor substrate, a first electrode disposed on the first insulating film, a two-dimensional material layer having a joint part forming a Schottky junction with the semiconductor substrate in a part of the semiconductor substrate, the two-dimensional material layer extending from the joint part to the first electrode over the first insulating film, a second electrode in contact with the semiconductor substrate, and a control electrode disposed at least partly around the joint part in plan view to form a Schottky junction with the semiconductor substrate.

Abstract: Cells may be cultured by a method including the following steps: a first step of preparing a population of cell aggregates having a major axis of not more than 400 ?m, and a second step of suspension culturing the population of cell aggregates obtained in the first step.

Abstract: A cell proliferation rate can be improved by a medium for cell culture, containing 4-(2-hydroxyethyl)-1-piperazineethanesulfonic acid (HEPES) at a concentration of not less than 30 mM, and having an osmotic pressure of 220 to 340 mOsm/kg, and a cell culture method using the medium.

Abstract: A medium composition, containing a basic fibroblast growth factor (bFGF) at not less than 150 ng/mL is useful for culturing cells.

Abstract: An electromagnetic wave detector includes: a semiconductor layer in which a step is formed, the semiconductor layer having sensitivity to a detection wavelength; an insulating film disposed on the step and provided with an opening through which a part of the step is exposed; a two-dimensional material layer disposed on the insulating film and the opening, the two-dimensional material layer including a connection region electrically connected to the semiconductor layer in the opening; a first electrode disposed on the insulating film and electrically connected to the two-dimensional material layer; and a second electrode disposed on the semiconductor layer and electrically connected to the first electrode through the connection region of the two-dimensional material layer.

Abstract: A medium with a reduced osmotic pressure containing a basal medium, in which the osmotic pressure is adjusted to 150 to 250 mOsm/kg, is useful for culturing cells.

Abstract: A method including adding choline at a specific concentration to a medium is useful for culturing cells.

Abstract: A biological material measurement device 80 comprises; a first light source emitting a first light; an ATR prism 20 including a front surface and a back surface and allowing the first light made incident from one end to be transmitted therethrough and emitted from the other end; a hyperbolic metamaterial layer 90 including a front surface and a back surface and arranged on the front surface of the ATR prism 20 such that the back surface of the hyperbolic metamaterial layer is in contact therewith; and a first light detector detecting the first light emitted from the ATR prism 20. An amount of a biological material in a living body is measured from the detected first light.

Abstract: An electromagnetic wave detector includes a light-receiving element, an insulating film, a two-dimensional material layer, a first electrode part, and a second electrode part. The light-receiving element includes a first semiconductor portion of a first conductivity type and a second semiconductor portion. The second semiconductor portion is joined to the first semiconductor portion. The second semiconductor portion is of a second conductivity type. The insulating film is disposed on the light-receiving element. The insulating film has an opening portion. The two-dimensional material layer is electrically connected to the first semiconductor portion in the opening portion. The two-dimensional material layer extends from on the opening portion onto the insulating film. The first electrode part is disposed on the insulating film. The first electrode part is electrically connected to the two-dimensional material layer. The second electrode part is electrically connected to the second semiconductor portion.

Abstract: A reflective optical device has an insulation layer, a lattice group, a rear surface electrode, and a voltage application unit. Lattice group is composed of a plurality of lattices including a lattice and a lattice. Each of the plurality of lattices has a structure in which dielectric layer and graphene layer are laminated. Voltage application unit has a function of individually applying a voltage to each of lattice group. Voltage application unit includes a voltage application unit to apply a first voltage to lattice, and a voltage application unit to apply a second voltage to lattice.

Abstract: This electromagnetic wave detector is provided with light reception graphene and reference graphene that are aligned on an insulating layer, first electrodes and second electrodes that are disposed so as to oppose each other and sandwich the light reception graphene and reference graphene, a gate electrode for applying a gate voltage to the light reception graphene and reference graphene, and a balanced circuit and detection circuit that are connected between the second electrodes. If electromagnetic waves are incident on the light reception graphene, photocarriers will be generated through in-band transition. If electromagnetic waves are incident on the reference graphene, photocarriers will not be generated because of the Pauli blocking effect. In a state where no electromagnetic waves are incident on the light reception graphene or reference graphene, the balanced circuit causes the first electrodes and second electrodes to have the same potential.

Abstract: A controller corrects a spectrum S (?) detected at a wavelength ? of signal light to S? (?) in accordance with expressions below: I(?)=(I2?I1)×(???1)/(?2??1)?I1, and S?(?)=S(?)?I(?), where I1 is the intensity of infrared light detected at a wavelength ?1 of reference light and I2 is the intensity of infrared light detected at a wavelength ?2 of correction light.

Abstract: This electromagnetic wave detector that detects electromagnetic waves by performing photoelectric conversion includes: a substrate; an insulating layer that is provided on the substrate; a graphene layer that is provided on the insulating layer; a pair of electrodes, which are provided on the insulating layer, and which are connected to both ends of the graphene layer, respectively; and a contact layer that is provided such that the contact layer is in contact with the graphene layer. The contact layer is formed of a material having a polar group, and a charge is formed in the graphene layer by having the contact layer in contact with the graphene layer.

Abstract: An electromagnetic wave detector includes: an insulating film having a first surface and a second surface facing the first surface; a first layer to perform photoelectric conversion by an incident electromagnetic wave and change in potential, the first layer being made of a first two-dimensional atomic layer material; and a second layer to receive the change in potential through the first insulating film and generate change in electrical quantity, the second layer being made of a second two-dimensional atomic layer material and provided on the first surface. In this manner, the sensitive electromagnetic wave detector detecting an incident electromagnetic wave as change in electrical quantity and having high response speed to an incident electromagnetic wave can be provided.

Abstract: Culturing a cartilage or bone progenitor cell in a medium containing a TGF-? signal inhibitor and FGF is effective for expansion culture of a cartilage or bone progenitor cell, and inducing differentiation of a cartilage or bone progenitor cell obtained by such a method is effective for producing a chondrocyte or osteocyte.

Abstract: An infrared light source radiates infrared light. An ATR prism receives, on a first end face, the infrared light radiated from the infrared light source, causes the received infrared light to pass therethrough while repeating total reflection off a second end face and a third end face, and emits the infrared light that has passed therethrough from the third end face. An infrared photodetector detects the intensity of the infrared light emitted from the ATR prism. Strain sensors, which are contact sensors of one type, are attached to the ATR prism and configured to detect a contact state between the ATR prism and a measurement skin.

Abstract: An infrared light source radiates, to an ATR prism, infrared light in entirety or part of a wavelength range with absorption wavelengths of a biological material. The ATR prism is adherable to a measurement skin. A prism vibration controller is mounted on the ATR prism and vibrates the ATR prism perpendicular to a contact surface between the ATR prism and the measurement skin. A controller causes an infrared photodetector to detect infrared light in synchronization with the vibration of the ATR prism.

Abstract: By using an additive for culturing animal cells that contains an amino acid or glucose, or an amino acid and glucose; or a medium for culturing animal cells that contains an amino acid or glucose, or an amino acid and glucose in addition to a medium component; or a method for culturing animal cells that includes culturing the animal cells using the aforementioned medium, or adding the aforementioned additive to a culture, the proliferation ability of animal cells can be improved particularly when the animal cells are cultured using a serum-free medium or a low albumin medium.

Abstract: The manufacturing method for the electronic device using graphene includes: forming a catalytic metal, forming a catalytic metal, forming a passivation film so as to expose upper surfaces of the catalytic metal and the catalytic metal, forming a graphene layer on the catalytic metal and catalytic metal that are exposed, forming a insulation film so as to cover the graphene layer, forming a substrate on the insulation film, and removing the catalytic metal.

Abstract: An electromagnetic wave detector comprises: p-type and n-type graphenes arranged side by side on an insulating layer; a first electrode and a second electrode opposing each other via the graphenes; a gate electrode for applying an operation voltage to the p-type and n-type graphenes; a balance circuit connected between two second electrodes; and a detection circuit. The p-type graphene has a Dirac point voltage higher than the operation voltage. The n-type graphene has a Dirac point voltage lower than the operation voltage. In a state in which no electromagnetic wave is incident on the graphenes, the balance circuit places the first electrode and the second electrode at the same potential. In a state in which an electromagnetic wave is incident on the p-type and n-type graphenes, the detection circuit detects an electric signal between the second electrodes, and outputs an electric signal in the state in which the electromagnetic wave is incident.