Abstract: When an oxidation treatment for regenerating a gate insulating film 6 is performed after forming gate electrodes 7A of a polymetal structure in which a WNx film and a W film are stacked on a polysilicon film, a wafer 1 is heated and cooled under conditions for reducing a W oxide 27 on the sidewall of each gate electrode 7A. As a result, the amount of the W oxide 27 to be deposited on the surface of the wafer 1 is reduced.

Abstract: According to the present invention, an overlay margin is secured for matching a wiring electrode 11 with a storage electrode 15 of a capacitor at their point of contact and the required area for a memory cell can be decreased by placing the plug electrode 11 of titanium nitride in the active region of a semiconductor substrate or over the gate electrode, reducing the size of the opening for passing the storage electrode 15 of the capacitor of a stacked structure, and decreasing the line width of a wiring electrode 13. By the common use of the above-mentioned plug electrodes in a CMISFET region in the peripheral circuit and in a memory cell of a static RAM, their circuit layouts can be made compact.

Abstract: According to the present invention, an overlay margin is secured for matching a wiring electrode 11 with a storage electrode 15 of a capacitor at their point of contact and the required area for a memory cell can be decreased by placing the plug electrode 11 of titanium nitride in the active region of a semiconductor substrate or over the gate electrode, reducing the size of the opening for passing the storage electrode 15 of the capacitor of a stacked structure, and decreasing the line width of a wiring electrode 13. By the common use of the above-mentioned plug electrodes in a CMISFET region in the peripheral circuit and in a memory cell of a static RAM, their circuit layouts can be made compact.