Patents by Inventor Shin Hiraoka

Shin Hiraoka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8829780
    Abstract: The invention aims at providing controllable parameters that are correlated with special color rendering index R9, and at providing a white-light emitting semiconductor device having a high R9 value obtained through optimization of such parameters. The white-light emitting semiconductor device is provided with a phosphor as a light-emitting material and with a light-emitting semiconductor element as an excitation source of the phosphor. The phosphor includes at least a green phosphor and a wide-band red phosphor. In the white light-emitting semiconductor device, an intensity at wavelength 640 nm of an emission spectrum which has been normalized with respect to luminous flux is 100-110% of the intensity at wavelength 640 nm of a spectrum of standard light for color rendering evaluation which has been normalized with respect to luminous flux.
    Type: Grant
    Filed: August 10, 2012
    Date of Patent: September 9, 2014
    Assignee: Mitsubishi Chemical Corporation
    Inventors: Hiroaki Sakuta, Kazuhiko Kagawa, Yoshihito Satou, Shin Hiraoka
  • Patent number: 8829778
    Abstract: A white light-emitting semiconductor device having improved reproducibility of bright red. The device outputs light having a blue component, a green component, and a red component. Each of the light components (blue, green, and red) is based on a light-emitting semiconductor element and/or a phosphor that absorbs light emitted by a light-emitting semiconductor element and emits light through wavelength conversion. The outputted light has a spectrum which has a maximum wavelength in the range of 615-645 nm, and the intensity at a wavelength of 580 nm of the outputted light, which has been normalized with respect to luminous flux, is 80-100% of the intensity at a wavelength of 580 nm of standard light for color rendering evaluation, which has been normalized with respect to luminous flux.
    Type: Grant
    Filed: September 30, 2013
    Date of Patent: September 9, 2014
    Assignee: Mitsubishi Chemical Corporation
    Inventors: Hiroaki Sakuta, Kazuhiko Kagawa, Yoshihito Satou, Hiroaki Okagawa, Shin Hiraoka
  • Patent number: 8716728
    Abstract: A nitride semiconductor light-emitting diode element 1 includes a nitride semiconductor layer 12 having a bottom surface and an upper surface and containing a light emitting layer 12b inside, and a supporting substrate 11 made from a metal is bonded to the bottom surface of the nitride semiconductor layer 12. A light reflecting depression A1 to reflect light generated in the light emitting layer 12b is formed in the bottom surface of the nitride semiconductor layer 12. According to the nitride semiconductor light-emitting diode element 1, since the light generated from the light emitting layer 12b and propagated in the nitride semiconductor layer 12 in a layer direction is reflected by the light reflecting depression A1 and its travel direction is changed, the ratio of the light incident upon the upper surface of the nitride semiconductor layer 12 within a critical angle is increased.
    Type: Grant
    Filed: October 19, 2007
    Date of Patent: May 6, 2014
    Assignee: Mitsubishi Chemical Corporation
    Inventors: Hiromitsu Kudo, Hirokazu Taniguchi, Hiroaki Okagawa, Shin Hiraoka, Takahide Joichi, Toshihiko Shima
  • Publication number: 20140042896
    Abstract: A white light-emitting semiconductor device having improved reproducibility of bright red. The device outputs light having a blue component, a green component, and a red component. Each of the light components (blue, green, and red) is based on a light-emitting semiconductor element and/or a phosphor that absorbs light emitted by a light-emitting semiconductor element and emits light through wavelength conversion. The outputted light has a spectrum which has a maximum wavelength in the range of 615-645 nm, and the intensity at a wavelength of 580 nm of the outputted light, which has been normalized with respect to luminous flux, is 80-100% of the intensity at a wavelength of 580 nm of standard light for color rendering evaluation, which has been normalized with respect to luminous flux.
    Type: Application
    Filed: September 30, 2013
    Publication date: February 13, 2014
    Applicant: Mitsubishi Chemical Corporation
    Inventors: Hiroaki SAKUTA, Kazuhiko Kagawa, Yoshihito Satou, Hiroaki Okagawa, Shin Hiraoka
  • Patent number: 8581488
    Abstract: A white light-emitting semiconductor device having improved reproducibility of bright red. The device outputs light having a blue component, a green component, and a red component. Each of the light components (blue, green, and red) consists of a light-emitting semiconductor element and/or a phosphor that absorbs light emitted by a light-emitting semiconductor element and emits light through wavelength conversion. The outputted light has a spectrum which has a maximum wavelength in the range of 615-645 nm, and the intensity at a wavelength of 580 nm of the outputted light, which has been normalized with respect to luminous flux, is 80-100% of the intensity at a wavelength of 580 nm of standard light for color rendering evaluation, which has been normalized with respect to luminous flux.
    Type: Grant
    Filed: November 9, 2011
    Date of Patent: November 12, 2013
    Assignee: Mitsubishi Chemical Corporation
    Inventors: Hiroaki Sakuta, Kazuhiko Kagawa, Yoshihito Satou, Hiroaki Okagawa, Shin Hiraoka
  • Patent number: 8455886
    Abstract: A light emitting device is constituted by flip-chip mounting a GaN-based LED chip. The GaN-based LED chip includes a light-transmissive substrate and a GaN-based semiconductor layer formed on the light-transmissive substrate, wherein the GaN-based semiconductor layer has a laminate structure containing an n-type layer, a light emitting layer and a p-type layer in this order from the light-transmissive substrate side, wherein a positive electrode is formed on the p-type layer, the electrode containing a light-transmissive electrode of an oxide semiconductor and a positive contact electrode electrically connected to the light-transmissive electrode, and the area of the positive contact electrode is half or less of the area of the upper surface of the p-type layer.
    Type: Grant
    Filed: March 13, 2012
    Date of Patent: June 4, 2013
    Assignee: Mitsubishi Chemical Corporation
    Inventors: Takahide Joichi, Hiroaki Okagawa, Shin Hiraoka, Toshihiko Shima, Hirokazu Taniguchi
  • Publication number: 20120319565
    Abstract: The invention aims at providing controllable parameters that are correlated with special color rendering index R9, and at providing a white light-emitting semiconductor device having a high R9 value obtained through optimization of such parameters. The white light-emitting semiconductor device is provided with a phosphor as a light-emitting material and with a light-emitting semiconductor element as an excitation source of the phosphor. The phosphor includes at least a green phosphor and a wide-band red phosphor. In the white light-emitting semiconductor device, an intensity at wavelength 640 nm of an emission spectrum which has been normalized with respect to luminous flux is 100-110% of the intensity at wavelength 640 nm of a spectrum of standard light for color rendering evaluation which has been normalized with respect to luminous flux.
    Type: Application
    Filed: August 10, 2012
    Publication date: December 20, 2012
    Applicant: Mitsubishi Chemical Corporation
    Inventors: Hiroaki SAKUTA, Kazuhiko Kagawa, Yoshihito Satou, Shin Hiraoka
  • Publication number: 20120175669
    Abstract: A light emitting device is constituted by flip-chip mounting a GaN-based LED chip. The GaN-based LED chip includes a light-transmissive substrate and a GaN-based semiconductor layer formed on the light-transmissive substrate, wherein the GaN-based semiconductor layer has a laminate structure containing an n-type layer, a light emitting layer and a p-type layer in this order from the light-transmissive substrate side, wherein a positive electrode is formed on the p-type layer, the electrode containing a light-transmissive electrode of an oxide semiconductor and a positive contact electrode electrically connected to the light-transmissive electrode, and the area of the positive contact electrode is half or less of the area of the upper surface of the p-type layer.
    Type: Application
    Filed: March 13, 2012
    Publication date: July 12, 2012
    Inventors: Takahide Joichi, Hiroaki Okagawa, Shin Hiraoka, Toshihiko Shima, Hirokazu Taniguchi
  • Publication number: 20120171796
    Abstract: A first conductive film 104-1 of a light-transmissive conductive oxide film 104 and a positive pad electrode 105 are electrically connected through a second conductive film 104-2 of the light-transmissive conductive oxide film 104 in a GaN-based LED element 100. A contact resistance of the light-transmissive conductive oxide film 104 with a p-type layer 102-3 in a first contact portion 104A is lower than in a second contact portion 104B, so that a current supplied from the positive pad electrode 105 to the p-type layer 102-3 through the conductive oxide film 104 flows to the p-type layer 102-3 mainly through the first contact portion 104A.
    Type: Application
    Filed: March 13, 2012
    Publication date: July 5, 2012
    Inventors: Shin Hiraoka, Hiroaki Okagawa, Takahide Joichi
  • Publication number: 20120112626
    Abstract: A white light-emitting semiconductor device having improved reproducibility of bright red. The device outputs light having a blue component, a green component, and a red component. Each of the light components (blue, green, and red) consists of a light-emitting semiconductor element and/or a phosphor that absorbs light emitted by a light-emitting semiconductor element and emits light through wavelength conversion. The outputted light has a spectrum which has a maximum wavelength in the range of 615-645 nm, and the intensity at a wavelength of 580 nm of the outputted light, which has been normalized with respect to luminous flux, is 80-100% of the intensity at a wavelength of 580 nm of standard light for color rendering evaluation, which has been normalized with respect to luminous flux.
    Type: Application
    Filed: November 9, 2011
    Publication date: May 10, 2012
    Applicant: MITSUBISHI CHEMICAL CORPORATION
    Inventors: Hiroaki SAKUTA, Kazuhiko KAGAWA, Yoshihito Satou, Hiroaki Okagawa, Shin Hiraoka
  • Patent number: 8158994
    Abstract: A first conductive film 104-1 of a light-transmissive conductive oxide film 104 and a positive pad electrode 105 are electrically connected through a second conductive film 104-2 of the light-transmissive conductive oxide film 104 in a GaN-based LED element 100. A contact resistance of the light-transmissive conductive oxide film 104 with a p-type layer 102-3 in a first contact portion 104A is lower than in a second contact portion 104B, so that a current supplied from the positive pad electrode 105 to the p-type layer 102-3 through the conductive oxide film 104 flows to the p-type layer 102-3 mainly through the first contact portion 104A.
    Type: Grant
    Filed: February 20, 2008
    Date of Patent: April 17, 2012
    Assignee: Mitsubishi Chemical Corporation
    Inventors: Shin Hiraoka, Hiroaki Okagawa, Takahide Joichi
  • Patent number: 8158990
    Abstract: A light emitting device is constituted by flip-chip mounting a GaN-based LED chip. The GaN-based LED chip includes a light-transmissive substrate and a GaN-based semiconductor layer formed on the light-transmissive substrate, wherein the GaN-based semiconductor layer has a laminate structure containing an n-type layer, a light emitting layer and a p-type layer in this order from the light-transmissive substrate side, wherein a positive electrode is formed on the p-type layer, the electrode containing a light-transmissive electrode of an oxide semiconductor and a positive contact electrode electrically connected to the light-transmissive electrode, and the area of the positive contact electrode is half or less of the area of the upper surface of the p-type layer.
    Type: Grant
    Filed: October 5, 2007
    Date of Patent: April 17, 2012
    Assignee: Mitsubishi Chemical Corporation
    Inventors: Takahide Joichi, Hiroaki Okagawa, Shin Hiraoka, Toshihiko Shima, Hirokazu Taniguchi
  • Publication number: 20110260196
    Abstract: Provided is a GaN-based LED element having a novel structure for improving output by increasing light extraction efficiency.
    Type: Application
    Filed: June 30, 2011
    Publication date: October 27, 2011
    Applicant: Mitsubishi Chemical Corporation
    Inventors: Hiroaki OKAGAWA, Shin Hiraoka, Takahide Jouichi, Toshihiko Shima
  • Publication number: 20110012154
    Abstract: Provided is a GaN-based LED element having a novel structure for improving output by increasing light extraction efficiency.
    Type: Application
    Filed: November 7, 2008
    Publication date: January 20, 2011
    Applicant: Mitsubishi Chemical Corporation
    Inventors: Hiroaki Okagawa, Shin Hiraoka, Takahide Jouichi, Toshihiko Shima
  • Publication number: 20100314642
    Abstract: A nitride semiconductor light-emitting diode element 1 includes a nitride semiconductor layer 12 having a bottom surface and an upper surface and containing a light emitting layer 12b inside, and a supporting substrate 11 made from a metal is bonded to the bottom surface of the nitride semiconductor layer 12. A light reflecting depression A1 to reflect light generated in the light emitting layer 12b is formed in the bottom surface of the nitride semiconductor layer 12. According to the nitride semiconductor light-emitting diode element 1, since the light generated from the light emitting layer 12b and propagated in the nitride semiconductor layer 12 in a layer direction is reflected by the light reflecting depression A1 and its travel direction is changed, the ratio of the light incident upon the upper surface of the nitride semiconductor layer 12 within a critical angle is increased.
    Type: Application
    Filed: October 19, 2007
    Publication date: December 16, 2010
    Applicant: MITSUBISHI CHEMICAL CORPORATION
    Inventors: Hiromitsu Kudo, Hirokazu Taniguchi, Hiroaki Okagawa, Shin Hiraoka, Takahide Joichi, Toshihiko Shima
  • Publication number: 20100019247
    Abstract: A light emitting device is constituted by flip-chip mounting a GaN-based LED chip 100 of the following (a): (a) the a GaN-based LED chip 100 comprising a light-transmissive substrate 101 and GaN-based semiconductor layer L formed on the light-transmissive substrate 101, wherein the GaN-based semiconductor layer L has a laminate structure containing n-type layer 102, light emitting layer 103 and p-type layer 104 in this order from the light-transmissive substrate 101 side, wherein a positive electrode E101 is formed on the p-type layer 104, said electrode E101 containing a light-transmissive electrode E101a of an oxide semiconductor and a positive contact electrode E101b electrically connected to the light-transmissive electrode, and the area of the positive contact electrode E101b is less than ½ of the area of the upper surface of the p-type layer 104.
    Type: Application
    Filed: October 5, 2007
    Publication date: January 28, 2010
    Inventors: Takahide Joichi, Hiroaki Okagawa, Shin Hiraoka, Toshihiko Shima, Hirokazu Taniguchi
  • Publication number: 20100012971
    Abstract: A first conductive film 104-1 and a positive pad electrode 105 are electrically connected through a second conductive film 104-2 in a GaN-based LED element 100. The contact resistance of a conductive oxide film 104 with a p-type layer 102-3 in a first contact portion 104A is made lower than in a second contact portion 104B, so that a current supplied from the positive pad electrode 105 to the p-type layer 102-3 through the conductive oxide film 104 flows to the p-type layer 102-3 mainly through the first contact portion 104A.
    Type: Application
    Filed: February 20, 2008
    Publication date: January 21, 2010
    Inventors: Shin Hiraoka, Hiroaki Okagawa, Takahide Joichi
  • Publication number: 20080135868
    Abstract: In an element structure of a nitride semiconductor light emitting element, the laminate including a light emitting part having a laminate structure of a first n-type layer 13, a p-type clad layer 15 and an active layer 14 sandwiched between them, and a second n-type layer 16 present at the outer side of the light emitting part and at the p-type clad layer side. When the laminate is to be grown on a substrate 11, the light emitting part has the p-type clad layer 15 placed on the upper side of the second n-type layer 16 is placed on the further upper side of the light emitting part. The second n-type layer 16 is dry-etched to form an exposed surface. An electrode P12 is formed on the surface exposed by dry etching, whereby the electrode P12 becomes a p-side electrode having a low contact resistance, which is used for injecting a hole in the p-type clad layer 15 of the aforementioned light emitting part, even if the electrode P12 is formed in the n-type layer 16.
    Type: Application
    Filed: September 29, 2005
    Publication date: June 12, 2008
    Applicant: MITSUBISHI CABLE INDUSTRIES, LTD.
    Inventors: Hiroaki Okagawa, Shin Hiraoka
  • Patent number: 4643137
    Abstract: A V-type engine construction which comprises an engine block having a pair of upwardly diverging cylinder banks with a generally V-shaped space defined therebetween and also having a plurality of engine cylinders defined in each of the cylinder banks, generally rectangular cylinder heads of identical shape adapted to be mounted on the respective cylinder banks, each of which cylinder heads has intake ports communicateable with the respective engine cylinders in the associated cylinder bank and defined therein so as to open generally towards the V-shaped space and also has two spaced coolant outflow ports which are in located adjacent front and rear ends of the respective cylinder head with respect to the direction of arrangement of the engine cylinders in the associated bank and are defined therein so as to open generally towards the V-shaped space, and an intake manifold integrally formed with lids one for each cylinder head, each of which lids is adapted to close one of the outflow ports in the associated c
    Type: Grant
    Filed: May 14, 1985
    Date of Patent: February 17, 1987
    Assignee: Mazda Motor Corporation
    Inventors: Masahiro Choushi, Shin Hiraoka
  • Patent number: 4603673
    Abstract: A crankcase ventilating system for a V-type, OHC internal combustion engine comprising a substantially hollow engine body structure having a pair of upwardly diverging cylinder banks and an oil pan secured to the body structure from below to define a crankcase, and also having a pressure buffer chamber, defined between the cylinder banks, at least one engine cylinder, defined in each of the cylinder banks, and a cam chamber defined therein at top of each of the cylinder banks, and an intake system for the introduction of a controlled combustible air-fuel mixture into the engine cylinders. The system comprises first separate oil return passages each defined in the body structure and communicating between the respective engine cylinder and the buffer chamber, and a connecting passage communicating between the buffer chamber and the crankcase.
    Type: Grant
    Filed: February 28, 1985
    Date of Patent: August 5, 1986
    Assignee: Mazda Motor Corporation
    Inventors: Shin Hiraoka, Koji Asanomi, Ryoji Abe