Patents by Inventor Shin Jae Kang

Shin Jae Kang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11922624
    Abstract: An apparatus for providing brain lesion information based on an image includes a magnetic resonance angiography (MRA) provider configured to provide an environment capable of displaying 3D time-of-flight magnetic resonance angiography (3D TOF MRA) using user input, a brain lesion input unit configured to generate and manage a brain lesion image, a maximum intensity projection (MIP) converter configured to configure MIP image data including at least one image frame corresponding to a projection position of the brain lesion image, a noise remover configured to remove noise of brain lesion information and to configure corrected MIP image data, from which the noise is removed, and an MRA reconfiguration unit configured to reconfigure a corrected brain lesion image by back-projecting the corrected MIP image data.
    Type: Grant
    Filed: December 27, 2019
    Date of Patent: March 5, 2024
    Assignee: JLK INC.
    Inventors: Won Tae Kim, Shin Uk Kang, Myung Jae Lee, Dong Min Kim, Jin Seong Jang
  • Patent number: 11840760
    Abstract: In a layer deposition method, a substrate is loaded into a process chamber. A gas filling tank is charged with a gas to a predetermined charge pressure. The pressure of the gas is elevated to a pressure greater than the predetermined charge pressure. The gas is introduced into the process chamber.
    Type: Grant
    Filed: December 3, 2018
    Date of Patent: December 12, 2023
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Shin-Jae Kang, Dong-Hoon Han, Do-Hyung Kim, Kyung-Wook Park, Kevin Bae, Sun-Soo Lee, In-Jae Lee, Jeon-Il Lee, Chae-Mook Lim
  • Patent number: 11127900
    Abstract: Variable resistance memory devices are provided. A variable resistance memory device includes conductive lines and a memory cell including a variable resistance element on one of the conductive lines. The variable resistance memory device includes a first insulating region between the conductive lines. Moreover, the variable resistance memory device includes a second insulating region on the first insulating region between the conductive lines. Methods of forming variable resistance memory devices are also provided.
    Type: Grant
    Filed: March 20, 2020
    Date of Patent: September 21, 2021
    Inventors: Shin-Jae Kang, Gyuhwan Oh, Jiyoon Chung, Junyeon Hwang
  • Patent number: 11058209
    Abstract: Disclosed is a beauty counseling information providing method and apparatus, which may generate and provide beauty counseling information by executing an artificial intelligence (AI) algorithm and/or a machine learning algorithm in a 5G environment connected for Internet-of-Things. A beauty counseling information providing method according to an embodiment of the present disclosure may include generating a first image set that has classified a plurality of images previously stored based on capturing information every predetermined period, generating a second image set that has classified a plurality of images included in the first image set based on the purpose of providing counseling information, calculating a body feature through comparative analysis of the plurality of images included in the second image set, and providing the beauty counseling information when the amount of change between the calculated body feature and previously stored existing body feature exceeds a predetermined value.
    Type: Grant
    Filed: October 11, 2019
    Date of Patent: July 13, 2021
    Assignee: LG ELECTRONICS INC.
    Inventor: Shin Jae Kang
  • Patent number: 10720577
    Abstract: Variable resistance memory devices are provided. A variable resistance memory device includes conductive lines and a memory cell including a variable resistance element on one of the conductive lines. The variable resistance memory device includes a first insulating region between the conductive lines. Moreover, the variable resistance memory device includes a second insulating region on the first insulating region between the conductive lines. Methods of forming variable resistance memory devices are also provided.
    Type: Grant
    Filed: January 4, 2018
    Date of Patent: July 21, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Shin-Jae Kang, Gyuhwan Oh, Jiyoon Chung, Junyeon Hwang
  • Publication number: 20200220077
    Abstract: Variable resistance memory devices are provided. A variable resistance memory device includes conductive lines and a memory cell including a variable resistance element on one of the conductive lines. The variable resistance memory device includes a first insulating region between the conductive lines. Moreover, the variable resistance memory device includes a second insulating region on the first insulating region between the conductive lines. Methods of forming variable resistance memory devices are also provided.
    Type: Application
    Filed: March 20, 2020
    Publication date: July 9, 2020
    Inventors: Shin-Jae Kang, Gyuhwan Oh, Jiyoon Chung, Junyeon Hwang
  • Patent number: 10636420
    Abstract: Disclosed is an electronic device including: at least one processor; and a memory electrically connected to the at least one processor, wherein the memory stores instructions to recognize a received first voice, recognizes a first speaker based on the recognized first voice, and determines a response corresponding to the first voice based on a result of the recognition of the first speaker. Other embodiments are possible.
    Type: Grant
    Filed: December 21, 2017
    Date of Patent: April 28, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Shin-Jae Kang, Jeong-Hyun Ha, Seok-Yeong Jung
  • Publication number: 20200037732
    Abstract: Disclosed is a beauty counseling information providing method and apparatus, which may generate and provide beauty counseling information by executing an artificial intelligence (AI) algorithm and/or a machine learning algorithm in a 5G environment connected for Internet-of-Things. A beauty counseling information providing method according to an embodiment of the present disclosure may include generating a first image set that has classified a plurality of images previously stored based on capturing information every predetermined period, generating a second image set that has classified a plurality of images included in the first image set based on the purpose of providing counseling information, calculating a body feature through comparative analysis of the plurality of images included in the second image set, and providing the beauty counseling information when the amount of change between the calculated body feature and previously stored existing body feature exceeds a predetermined value.
    Type: Application
    Filed: October 11, 2019
    Publication date: February 6, 2020
    Applicant: LG ELECTRONICS INC.
    Inventor: Shin Jae KANG
  • Publication number: 20190301016
    Abstract: In a layer deposition method, a substrate is loaded into a process chamber. A gas filling tank is charged with a gas to a predetermined charge pressure. The pressure of the gas is elevated to a pressure greater than the predetermined charge pressure. The gas is introduced into the process chamber.
    Type: Application
    Filed: December 3, 2018
    Publication date: October 3, 2019
    Inventors: SHIN-JAE KANG, Dong-Hoon HAN, Do-Hyung KIM, Kyung-Wook PARK, Kevin BAE, Sun-Soo LEE, In-Jae LEE, Jeon-II LEE, Chae-Mook LIM
  • Publication number: 20190067569
    Abstract: Variable resistance memory devices are provided. A variable resistance memory device includes conductive lines and a memory cell including a variable resistance element on one of the conductive lines. The variable resistance memory device includes a first insulating region between the conductive lines. Moreover, the variable resistance memory device includes a second insulating region on the first insulating region between the conductive lines. Methods of forming variable resistance memory devices are also provided.
    Type: Application
    Filed: January 4, 2018
    Publication date: February 28, 2019
    Inventors: Shin-Jae Kang, Gyuhwan Oh, Jiyoon Chung, Junyeon Hwang
  • Patent number: 10134980
    Abstract: In a method of manufacturing an MRAM device, a lower electrode and a preliminary first free layer pattern sequentially stacked are formed on a substrate. An upper portion of the preliminary first free layer pattern is removed to form a first free layer pattern. A second free layer and a tunnel barrier layer are sequentially formed on the first free layer pattern. The second free layer is partially oxidized to form a second free layer pattern. A fixed layer structure is formed on the tunnel barrier layer.
    Type: Grant
    Filed: August 11, 2017
    Date of Patent: November 20, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jong-Chul Park, Byoung-Jae Bae, Shin-Jae Kang, Young-Seok Choi
  • Publication number: 20180197539
    Abstract: Disclosed is an electronic device including: at least one processor; and a memory electrically connected to the at least one processor, wherein the memory stores instructions to recognize a received first voice, recognizes a first speaker based on the recognized first voice, and determines a response corresponding to the first voice based on a result of the recognition of the first speaker. Other embodiments are possible.
    Type: Application
    Filed: December 21, 2017
    Publication date: July 12, 2018
    Inventors: Shin-Jae KANG, Jeong-Hyun HA, Seok-Yeong JUNG
  • Patent number: 10021308
    Abstract: There is provided a digital imaging apparatus including a motion sensor configured to output motion data corresponding to a movement of a camera module from at least one sensing axis, a single signal conversion processor configured to transmit or receive the motion data at a switching timing interval, and to compensate for a phase delay due to the switching timing interval of the motion data, and a single signal conversion controller configured to control the switching timing interval of the single signal conversion processor and phase delay compensation regarding the motion data of the at least one sensing axis according to the switching timing interval.
    Type: Grant
    Filed: March 31, 2016
    Date of Patent: July 10, 2018
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventor: Shin Jae Kang
  • Patent number: 9906181
    Abstract: A camera module having a voice coil motor driver, including a driving controller configured to compare a reference voltage and a negative feedback voltage to output a driving control signal, and a driver configured to drive a coil of the voice coil motor according to the driving control signal.
    Type: Grant
    Filed: April 5, 2016
    Date of Patent: February 27, 2018
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventor: Shin Jae Kang
  • Patent number: 9893272
    Abstract: A method of fabricating a magnetic memory device is provided. The method may include sequentially forming a first magnetic layer, a tunnel barrier layer, and a second magnetic layer on a substrate, forming a mask pattern on the second magnetic layer to expose a portion of the second magnetic layer, forming a capping insulating layer on a sidewall of the mask pattern and the portion of the second magnetic layer, injecting an oxygen ion into the portion of the second magnetic layer through the capping insulating layer to form an oxide layer, anisotropically etching the capping insulating layer to form a capping spacer, and patterning the oxide layer, the tunnel barrier layer, and the first magnetic layer using the mask pattern and the capping spacer.
    Type: Grant
    Filed: May 4, 2015
    Date of Patent: February 13, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Shin-Jae Kang, Jongchul Park, Byoungjae Bae, Jaesuk Kwon, Hyunsoo Shin
  • Publication number: 20170338408
    Abstract: In a method of manufacturing an MRAM device, a lower electrode and a preliminary first free layer pattern sequentially stacked are formed on a substrate. An upper portion of the preliminary first free layer pattern is removed to form a first free layer pattern. A second free layer and a tunnel barrier layer are sequentially formed on the first free layer pattern. The second free layer is partially oxidized to form a second free layer pattern. A fixed layer structure is formed on the tunnel barrier layer.
    Type: Application
    Filed: August 11, 2017
    Publication date: November 23, 2017
    Inventors: Jong-Chul PARK, Byoung-Jae BAE, Shin-Jae KANG, Young-Seok CHOI
  • Patent number: 9735349
    Abstract: In a method of manufacturing an MRAM device, a lower electrode and a preliminary first free layer pattern sequentially stacked are formed on a substrate. An upper portion of the preliminary first free layer pattern is removed to form a first free layer pattern. A second free layer and a tunnel barrier layer are sequentially formed on the first free layer pattern. The second free layer is partially oxidized to form a second free layer pattern. A fixed layer structure is formed on the tunnel barrier layer.
    Type: Grant
    Filed: February 3, 2015
    Date of Patent: August 15, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jong-Chul Park, Byoung-Jae Bae, Shin-Jae Kang, Young-Seok Choi
  • Patent number: 9679943
    Abstract: A semiconductor device may include a first magnetic layer including a plurality of first regions configuring a plurality of memory cells and spaced apart from each other on a substrate, and a second region encompassing the plurality of first regions and electrically isolated from the first regions, a tunnel barrier layer disposed on the first magnetic layer, and a second magnetic layer disposed on the tunnel barrier layer.
    Type: Grant
    Filed: May 13, 2015
    Date of Patent: June 13, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jong Chul Park, Shin Jae Kang, Shin Kwon, Kyung Rae Byun
  • Patent number: 9634240
    Abstract: Magnetic memory devices include a plurality of first magnetic patterns on a substrate so as to be spaced apart from each other, a first insulating pattern between the first magnetic patterns to define the first magnetic patterns, and a tunnel barrier layer covering the first magnetic patterns and the first insulating pattern. The first insulating pattern includes a first magnetic element, and the first magnetic element is the same as a second magnetic element constituting the first magnetic patterns.
    Type: Grant
    Filed: December 11, 2014
    Date of Patent: April 25, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jongchul Park, Byoungjae Bae, Shin-Jae Kang, Eunsun Noh, Kyung Rae Byun
  • Patent number: 9500835
    Abstract: Embodiments of the invention provide an apparatus for driving an actuator of a camera module in a mobile device. The apparatus includes a proportional-integral-derivative (PID) controller configured to compare an output of a gyro sensor with an output of a hall sensor configured to sense a position of an actuator to output a digital signal of plural bits, and a differential current digital-to-analog converter configured to convert the digital signal output from the PID controller into an analog current signal.
    Type: Grant
    Filed: July 3, 2014
    Date of Patent: November 22, 2016
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventor: Shin Jae Kang