Shingo Honda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
Abstract: The present invention relates to ferric phosphate hydrate particles for use as a precursor of olivine type lithium iron phosphate particles, wherein the ferric phosphate hydrate particles exhibit at least one crystal structure selected from the group consisting of a strengite crystal structure and a meta-strengite (phosphosiderite) crystal structure, and have a sodium (Na) content of not more than 100 ppm and a molar ratio of phosphorus to iron (phosphorus/iron) of not less than 0.9 and not more than 1.1. The ferric phosphate hydrate particles according to the present invention are suitable as a precursor of olivine type lithium iron phosphate particles for a positive electrode substance of non-aqueous electrolyte secondary batteries, and are in the form of fine particles and have a very small content of impurities.
Abstract: The present invention relates to a process for producing lithium iron phosphate particles having an olivine type structure, comprising a first step of mixing an iron oxide or an iron oxide hydroxide as an iron raw material which comprises at least one element selected from the group consisting of Na, Mg, Al, Si, Cr, Mn and Ni in an amount of 0.1 to 2 mol % for each element based on Fe, and a carbon element C in an amount of 5 to 10 mol % based on Fe, and has a content of Fe2+ of not more than 40 mol % based on an amount of Fe and an average primary particle diameter of 5 to 300 nm, with a lithium raw material and a phosphorus raw material; a second step of controlling agglomerates diameter in the resulting mixture is 0.3 to 5.0 ?m; and a third step of sintering the mixture obtained in the second step in an inert gas or reducing gas atmosphere having an oxygen concentration of not more than 0.1% at a temperature of 250 to 750° C.
Abstract: A wiring material film is formed by depositing a first conductive barrier film, an aluminum film, and a second conductive barrier film on a semiconductor substrate in this order. An organic material film, a silicon oxide film and a resist film are formed on the surface of the second barrier film in this order. A resist pattern is formed on silicon oxide film. A pattern of the silicon oxide film is formed on the surface of the organic material film by etching the silicon oxide film with a process gas containing at least fluorine using the resist pattern as a mask. The substrate is treated with a plasma of a process gas containing C before exposing the substrate to air after forming the pattern of the organic material film on the surface of the conductive barrier film by etching the organic material film.