Abstract: A semiconductor device includes an electrode plate, a metallic member, and solder connecting the metallic member with the electrode plate. On a surface of the electrode plate, a first groove and a group of second grooves are provided. The first groove has first to fourth linear parts. The group of second grooves is arranged within a range surrounded by the first groove, and has end portions on an outer periphery side that are connected with the first groove. The group of second grooves includes first to fourth sets. Each of the sets includes a plurality of second grooves connected with the first to fourth linear parts. When the metallic member is seen in a lamination direction of the electrode plate and the metallic member, an outer peripheral edge of a region of the metallic member, the region being connected with the solder, goes across the first to fourth sets.

Abstract: A semiconductor device may include: a first and a second semiconductor elements each including electrodes on both surfaces thereof; a first and a second metal plates which interpose the first semiconductor element, the metal plates respectively being bonded to the first semiconductor element via first soldered portions; and a third and a fourth metal plates which interpose the second semiconductor element, the metal plates respectively being bonded to the second semiconductor element via second soldered portions; wherein a first joint is provided at the first metal plate, a second joint is provided at the fourth metal plate, the joints are bonded via a third soldered portion, and a solidifying point of the first soldered portions is higher than a solidifying point of the third soldered portion, and a solidifying point of the second soldered portions is higher than the solidifying point of the third soldered portion.

Abstract: A semiconductor device includes a first metal plate and a second metal plate which interpose a first semiconductor element therebetween, the first metal plate and the second metal plate being bonded to the first semiconductor element with first soldered portions; and includes a third metal plate and a fourth metal plate which interpose a second semiconductor element therebetween, the third metal plate and the fourth metal plate being bonded to the second semiconductor element with second soldered portions. A first joint provided at an edge of the first metal plate and a second joint provided at an edge of the fourth metal plate are bonded with a third soldered portion. A total sum of thicknesses of the first soldered portions is different from a thickness of the third soldered portion, a solidifying point of the thinner one is higher than a solidifying point of the thicker one.

Abstract: In an optical fiber network for transmitting optical signals in a robot having three or more joints connecting a plurality of links in series such that the links include two end links located at either end and intermediate links provided between the two end links, and the links connected by the joints are moveable relative to each other, a plurality of optical transceiver modules are provided on the links such that at least one optical transceiver module is provided on each link; and a plurality of optical fiber cables connect the optical transceiver modules in a ring; wherein at least one end of each optical fiber cable connecting the optical transceiver modules provided on different links is connected to one of the optical transceiver modules provided on the intermediate links.

Abstract: An articulate joint mechanism includes a first link (L1, A1, M1, U1), a second link (L2, A2, M2, U2), a coupling (KR, KR1, ER, ER1, ER2, MR, UR) mechanically connecting the first link with the second link in a mutually moveable manner at least with one degree of freedom, and an optical fiber cable (11, 21, 31, 41) extending from the first link to the second link via the coupling, the optical fiber cable including a fiber cable core (F1, F2, F3, F4) and a sheath (C1, C2, C3, C4) surrounding the fiber cable core.

Abstract: An internal combustion engine includes a combustion chamber, a fuel injector injecting fuel into the combustion chamber, a cylinder, a piston having a crown and reciprocating in the cylinder, the crown being exposed to the combustion chamber, and an ignition delay enhancer prolonging an ignition delay of a fuel-air mixture in the combustion chamber. A ceramic member is disposed on at least a fuel injection port, to which fuel is injected from the fuel injector, of the crown of the piston.

Abstract: A structure for strain detection is provided with a ceramic main body which is attached to a detection target, in which strain is to be detected, and a stress concentrated section which is formed in the main body and which is fractured at a predetermined strain or greater. Assuming the dimension of the entire main body in one direction is represented by Lm and the dimension of the stress concentrated section in the one direction is represented by Lc, then it holds that Lc<Lm. The stress concentrated section is constituted by a thin-walled portion in the one direction.

Abstract: In an optical fiber network for transmitting optical signals in a robot having three or more joints connecting a plurality of links in series such that the links include two end links located at either end and intermediate links provided between the two end links, and the links connected by the joints are moveable relative to each other, a plurality of optical transceiver modules are provided on the links such that at least one optical transceiver module is provided on each link; and a plurality of optical fiber cables connect the optical transceiver modules in a ring; wherein at least one end of each optical fiber cable connecting the optical transceiver modules provided on different links is connected to one of the optical transceiver modules provided on the intermediate links.

Abstract: An articulate joint mechanism includes a first link (L1, A1, M1, U1), a second link (L2, A2, M2, U2), a coupling (KR, KR1, ER, ER1, ER2, MR, UR) mechanically connecting the first link with the second link in a mutually moveable manner at least with one degree of freedom, and an optical fiber cable (11, 21, 31, 41) extending from the first link to the second link via the coupling, the optical fiber cable including a fiber cable core (F1, F2, F3, F4) and a sheath (C1, C2, C3, C4) surrounding the fiber cable core.

Abstract: A semiconductor device includes: a semiconductor element; a heat sink including a first surface and a second surface, the semiconductor element being joined to the first surface, the second surface being a surface on an opposite side of the first surface; and a package that is in contact with the semiconductor element and the first surface of the heat sink, the package including a recess portion in an outer face, wherein the heat sink includes a thick portion, and a thin portion having a thickness that is smaller than that of the thick portion, and the thin portion is located on a line connecting an outer face of the semiconductor element and the recess portion in a shortest distance.

Abstract: An internal combustion engine 20 includes a combustion chamber 26, a fuel injector 31 injecting fuel into the combustion chamber 26, a cylinder 22, a piston 24 having a crown and reciprocating in the cylinder 22, the crown being exposed to the combustion chamber 26, and an ignition delay enhancer prolonging an ignition delay of a fuel-air mixture in the combustion chamber 26. A ceramic member 24a is disposed on at least a fuel injection port, to which fuel is injected from the fuel injector 31, of the crown of the piston 24.

Abstract: The present invention relates to a semiconductor device and a manufacturing method thereof. The semiconductor device has a plurality of power units placed in parallel in a predetermined direction, wherein each of the power units includes a plurality of semiconductor elements placed on a metal plate having predetermined gaps with each other. The semiconductor elements of each of the two power units include a near-sided semiconductor element that is closer to an inlet of the resin among the two semiconductor elements having the predetermined gap therebetween. A structure is positioned on a passage and downstream in a resin flow direction relative to a predetermined position that corresponds to end parts of the near-sided semiconductor elements. The structure is a joint to connect the two power units placed adjacent to each other in the predetermined direction, and to be integrally sealed with the resin, along with the power unit.

Abstract: A processing apparatus externally receives a processing request and executes the requested processing. The processing apparatus transmits the result of the processing to a processing request source if a connection to the processing request source is maintained until the requested processing is executed. The processing apparatus stores the result of executing the processing in a memory if the connection to the processing request source is disconnected before the end of the requested processing. The processing apparatus transmits the processing result stored in the memory to the processing request source if the processing requested when the processing request is received is executed but is stored in the memory.

Abstract: A receiving device receives messages, detects the priority levels set in the headers of the messages, and reads the first and second messages. When the receiving device receives the header of the second message during reading of the first message, it controls, in accordance with the priority levels of the first and second messages, the reading rates at which the first and second messages are read.

Abstract: A transmission apparatus capable of transmitting a first content stored in a first storage area to a receiving apparatus includes a determination unit configured to determine whether the receiving apparatus has authority to access a second storage area storing a second content associated with the first content, a storage unit configured to store the second content in a third storage area different from the second storage area in a case where the receiving apparatus does not have authority to access the second storage area, and a transmission unit configured to transmit to the receiving apparatus access information for accessing the third storage area storing the second content by the storage unit.

Abstract: A semiconductor device includes a plurality of semiconductor elements each having a front surface and a back surface; a front surface-side heatsink that is positioned on a front-surface side of the semiconductor elements and dissipates heat generated by the semiconductor elements; a back surface-side heatsink that is positioned on a back surface-side of the semiconductor elements and dissipates heat generated by the semiconductor elements; a sealing material that covers the semiconductor device except for a front surface of the front surface-side heatsink and a back surface of the back surface-side heatsink; a primer that is coated on at least one of the front surface-side heatsink and the back surface-side heatsink and improves contact with the sealing member; and a protruding portion positioned between the plurality of semiconductor elements, on at least one of the back surface of the front surface-side heatsink and the front surface of the back surface-side heatsink.

Abstract: The present invention relates to a semiconductor device and a manufacturing method thereof. The semiconductor device has a plurality of power units placed in parallel in a predetermined direction, wherein each of the power units includes a plurality of semiconductor elements placed on a metal plate having predetermined gaps with each other. The semiconductor elements of each of the two power units include a near-sided semiconductor element that is closer to an inlet of the resin among the two semiconductor elements having the predetermined gap therebetween. A structure is positioned on a passage and downstream in a resin flow direction relative to a predetermined position that corresponds to end parts of the near-sided semiconductor elements. The structure is a joint to connect the two power units placed adjacent to each other in the predetermined direction, and to be integrally sealed with the resin, along with the power unit.

Abstract: A semiconductor device includes a plurality of semiconductor elements each having a front surface and a back surface; a front surface-side heatsink that is positioned on a front-surface side of the semiconductor elements and dissipates heat generated by the semiconductor elements; a back surface-side heatsink that is positioned on a back surface-side of the semiconductor elements and dissipates heat generated by the semiconductor elements; a sealing material that covers the semiconductor device except for a front surface of the front surface-side heatsink and a back surface of the back surface-side heatsink; a primer that is coated on at least one of the front surface-side heatsink and the back surface-side heatsink and improves contact with the sealing member; and a protruding portion positioned between the plurality of semiconductor elements, on at least one of the back surface of the front surface-side heatsink and the front surface of the back surface-side heatsink.

Abstract: A semiconductor device includes a first semiconductor element; a first thick plate portion that is electrically connected to an electrode on a lower surface side of the first semiconductor element, and is formed by a conductor; a second semiconductor element that is arranged such that a main surface of the second semiconductor element faces a main surface of the first semiconductor element; a second thick plate portion that is electrically connected to an electrode on a lower surface side of the second semiconductor element, and is formed by a conductor; a third thick plate portion that is electrically connected to an electrode on an upper surface side of the first semiconductor element, and is formed by a conductor; a fourth thick plate portion that is electrically connected to an electrode on an upper surface side of the second semiconductor element, and is formed by a conductor; a first thin plate portion that is provided on the second thick plate portion, is formed by a conductor, and is thinner than the

Abstract: In a honeycomb filter 20, partition portions and trapping layers are formed such that a pore volume difference that is obtained from pore distributions measured by mercury porosimetry and is a difference in volume of pores having a diameter of 10 ?m or less between the downstream portion and the upstream portion of the honeycomb filter, is in the range of 0.01 cm3/g or more and 0.08 cm3/g or less. In the honeycomb filter, in the downstream portion, a first pore volume peak is present in a first pore diameter range of 2 ?m or more and 9 ?m or less and a second pore volume peak that is higher than the first pore volume peak is present in a second pore diameter range of 10 ?m or more and 25 ?m or less.